公开(公告)号：US20240363722A1

公开(公告)日：2024-10-31

申请号：US18769246

申请日：2024-07-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ting-Ting CHEN ,  Tsai-Jung Ho ,  Tsung-Han Ko ,  Tetsuji Ueno ,  Yahru Cheng ,  Chen-Han Wang ,  Keng-Chu Lin ,  Shuen-Shin Liang ,  Tsu-Hsiu Perng

IPC分类号： H01L29/49 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/4991 ,  H01L29/0653 ,  H01L29/6656

摘要： The present disclosure describes a method of forming an intermediate spacer structure between a gate structure and a source/drain (S/D) contact structure and removing a top portion of the intermediate spacer structure to form a recess. The intermediate spacer structure includes a first spacer layer, a second spacer layer, and a sacrificial spacer layer between the first spacer layer and the second spacer layer. The method further includes removing the sacrificial spacer layer to form an air gap between the first spacer layer and the second spacer layer and spinning a dielectric layer on the air gap, the first spacer layer, and the second spacer layer to fill in the recess and seal the air gap. The dielectric layer includes raw materials for a spin-on dielectric material.

公开(公告)号：US10157739B2

公开(公告)日：2018-12-18

申请号：US15875788

申请日：2018-01-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsung-Han Ko ,  Ching-Yu Chang ,  Kuan-Hsin Lo

IPC分类号： H01L21/027 ,  H01L21/02 ,  H01L21/311 ,  G03F7/00

摘要： Disclosed is a method of forming a semiconductor device using a self-assembly (DSA) patterning process. The method includes forming a patterned feature over a substrate; applying an orientation material that includes a first polymer and a second polymer over the substrate, wherein the first polymer has a first activation energy and the second polymer has a second activation energy; baking the substrate at first temperature thereby forming a first orientation layer that includes the first polymer; baking the substrate at second temperature thereby forming a second orientation layer that includes the second polymer; and performing a directed self-assembly (DSA) process over the first and the second orientation layers.

公开(公告)号：US20180144928A1

公开(公告)日：2018-05-24

申请号：US15875788

申请日：2018-01-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsung-Han Ko ,  Ching-Yu Chang ,  Kuan-Hsin Lo

IPC分类号： H01L21/027 ,  H01L21/02 ,  G03F7/00 ,  H01L21/311

CPC分类号： H01L21/0271 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/02315 ,  H01L21/02318 ,  H01L21/02356 ,  H01L21/31138

摘要： Disclosed is a method of forming a semiconductor device using a self-assembly (DSA) patterning process. The method includes forming a patterned feature over a substrate; applying an orientation material that includes a first polymer and a second polymer over the substrate, wherein the first polymer has a first activation energy and the second polymer has a second activation energy; baking the substrate at first temperature thereby forming a first orientation layer that includes the first polymer; baking the substrate at second temperature thereby forming a second orientation layer that includes the second polymer; and performing a directed self-assembly (DSA) process over the first and the second orientation layers.

公开(公告)号：US09892914B2

公开(公告)日：2018-02-13

申请号：US14918310

申请日：2015-10-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsung-Han Ko ,  Ching-Yu Chang ,  Kuan-Hsin Lo

IPC分类号： H01L21/311 ,  H01L21/027 ,  H01L21/02

CPC分类号： H01L21/0271 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/02315 ,  H01L21/02318 ,  H01L21/02356 ,  H01L21/31138

摘要： Disclosed is a method of forming a semiconductor device using a self-assembly (DSA) patterning process. The method includes forming a patterned feature over a substrate; applying an orientation material that includes a first polymer and a second polymer over the substrate, wherein the first polymer has a first activation energy and the second polymer has a second activation energy; baking the substrate at first temperature thereby forming a first orientation layer that includes the first polymer; baking the substrate at second temperature thereby forming a second orientation layer that includes the second polymer; and performing a directed self-assembly (DSA) process over the first and the second orientation layers.

公开(公告)号：US20170110319A1

公开(公告)日：2017-04-20

申请号：US14918310

申请日：2015-10-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsung-Han Ko ,  Ching-Yu Chang ,  Kuan-Hsin Lo

IPC分类号： H01L21/02 ,  H01L21/311

CPC分类号： H01L21/0271 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/02315 ,  H01L21/02318 ,  H01L21/02356 ,  H01L21/31138

摘要： Disclosed is a method of forming a semiconductor device using a self-assembly (DSA) patterning process. The method includes forming a patterned feature over a substrate; applying an orientation material that includes a first polymer and a second polymer over the substrate, wherein the first polymer has a first activation energy and the second polymer has a second activation energy; baking the substrate at first temperature thereby forming a first orientation layer that includes the first polymer; baking the substrate at second temperature thereby forming a second orientation layer that includes the second polymer; and performing a directed self-assembly (DSA) process over the first and the second orientation layers.