公开(公告)号：US10985028B1

公开(公告)日：2021-04-20

申请号：US16657269

申请日：2019-10-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC分类号： H01L21/31 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/687

摘要： An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US20210118689A1

公开(公告)日：2021-04-22

申请号：US16657269

申请日：2019-10-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

摘要： An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US10354913B2

公开(公告)日：2019-07-16

申请号：US15801179

申请日：2017-11-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Nai-Chia Chen ,  Chun-Li Chou ,  Yen-Chiu Kuo ,  Chun-Hung Chao ,  Yu-Li Cheng

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L23/528 ,  B08B3/02 ,  B08B3/08 ,  H01L23/522 ,  H01L21/311

摘要： A method of forming a semiconductor device includes forming a conductive feature in a first dielectric layer, forming one or more dielectric layers over the first dielectric layer, and forming a via opening in the one or more dielectric layers, a bottom of the via opening exposing the conductive feature. The method further includes cleaning the via opening using a chemical mixture, and rinsing the via opening using basic-ion doped water after cleaning the via opening.

公开(公告)号：US20180350664A1

公开(公告)日：2018-12-06

申请号：US15801179

申请日：2017-11-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Nai-Chia Chen ,  Chun-Li Chou ,  Yen-Chiu Kuo ,  Chun-Hung Chao ,  Yu-Li Cheng

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L23/522 ,  H01L23/528 ,  B08B3/02 ,  B08B3/08

CPC分类号： H01L21/76814 ,  B08B3/024 ,  B08B3/08 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/5283

摘要： A method of forming a semiconductor device includes forming a conductive feature in a first dielectric layer, forming one or more dielectric layers over the first dielectric layer, and forming a via opening in the one or more dielectric layers, a bottom of the via opening exposing the conductive feature. The method further includes cleaning the via opening using a chemical mixture, and rinsing the via opening using basic-ion doped water after cleaning the via opening.

公开(公告)号：US10755972B2

公开(公告)日：2020-08-25

申请号：US15464057

申请日：2017-03-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Nai-Chia Chen ,  Chun-Li Chou ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Chun-Hung Chao

IPC分类号： H01L21/768 ,  H01L21/311

摘要： A semiconductor device and method of manufacture comprise placing an etch stop layer of a material such as aluminum oxide over a conductive element, placing a dielectric layer over the etch stop layer, and placing a hardmask of a material such as titanium nitride over the dielectric layer. Openings are formed to the etch stop layer, the hardmask material is selectively removed, and the openings are then the material of the etch stop layer is then selectively removed to extend the openings through the etch stop layer.

公开(公告)号：US20180151421A1

公开(公告)日：2018-05-31

申请号：US15464057

申请日：2017-03-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Nai-Chia Chen ,  Chun-Li Chou ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Chun-Hung Chao

IPC分类号： H01L21/768 ,  H01L21/311

CPC分类号： H01L21/76831 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76813 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76883 ,  H01L2221/1047

摘要： A semiconductor device and method of manufacture comprise placing an etch stop layer of a material such as aluminum oxide over a conductive element, placing a dielectric layer over the etch stop layer, and placing a hardmask of a material such as titanium nitride over the dielectric layer. Openings are formed to the etch stop layer, the hardmask material is selectively removed, and the openings are then the material of the etch stop layer is then selectively removed to extend the openings through the etch stop layer.