公开(公告)号：US10658179B2

公开(公告)日：2020-05-19

申请号：US16104637

申请日：2018-08-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Nai-Chia Chen ,  Wan Hsuan Hsu ,  Chia-Wei Wu ,  Neng-Jye Yang ,  Chun-Li Chou

IPC分类号： H01L21/033 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/027 ,  H01L21/3213

摘要： Aspects of the disclosure provide a method. The method includes providing a substrate having a structure formed on the substrate, and forming a spacer layer on the structure. Then, the method includes forming a mask layer over the spacer layer. The mask layer includes a first layer, a second layer over the first layer, and a third layer over the second layer. Further, the method includes patterning the third layer of the mask layer, and etching the first layer and the second layer of the mask layer with a dry etching process using the third layer as an etch mask to form an opening that exposes a portion of the spacer layer. Then, the method includes removing the second layer using a wet etchant before a formation of a backfill material layer in the opening and over the first layer.

公开(公告)号：US10553720B2

公开(公告)日：2020-02-04

申请号：US15796398

申请日：2017-10-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Han Chu ,  Nai-Chia Chen ,  Jui-Ming Shih ,  Ping-Jung Huang ,  Tsung-Min Chuo ,  Bi-Ming Yen

IPC分类号： H01L21/02 ,  H01L21/30 ,  H01L21/76 ,  H01L29/78 ,  H01L21/308 ,  H01L21/306 ,  H01L21/324 ,  H01L21/762 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/66

摘要： An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.

公开(公告)号：US10354913B2

公开(公告)日：2019-07-16

申请号：US15801179

申请日：2017-11-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Nai-Chia Chen ,  Chun-Li Chou ,  Yen-Chiu Kuo ,  Chun-Hung Chao ,  Yu-Li Cheng

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L23/528 ,  B08B3/02 ,  B08B3/08 ,  H01L23/522 ,  H01L21/311

摘要： A method of forming a semiconductor device includes forming a conductive feature in a first dielectric layer, forming one or more dielectric layers over the first dielectric layer, and forming a via opening in the one or more dielectric layers, a bottom of the via opening exposing the conductive feature. The method further includes cleaning the via opening using a chemical mixture, and rinsing the via opening using basic-ion doped water after cleaning the via opening.

公开(公告)号：US20180350664A1

公开(公告)日：2018-12-06

申请号：US15801179

申请日：2017-11-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Nai-Chia Chen ,  Chun-Li Chou ,  Yen-Chiu Kuo ,  Chun-Hung Chao ,  Yu-Li Cheng

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L23/522 ,  H01L23/528 ,  B08B3/02 ,  B08B3/08

CPC分类号： H01L21/76814 ,  B08B3/024 ,  B08B3/08 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/5283

摘要： A method of forming a semiconductor device includes forming a conductive feature in a first dielectric layer, forming one or more dielectric layers over the first dielectric layer, and forming a via opening in the one or more dielectric layers, a bottom of the via opening exposing the conductive feature. The method further includes cleaning the via opening using a chemical mixture, and rinsing the via opening using basic-ion doped water after cleaning the via opening.

公开(公告)号：US10755972B2

公开(公告)日：2020-08-25

申请号：US15464057

申请日：2017-03-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Nai-Chia Chen ,  Chun-Li Chou ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Chun-Hung Chao

IPC分类号： H01L21/768 ,  H01L21/311

摘要： A semiconductor device and method of manufacture comprise placing an etch stop layer of a material such as aluminum oxide over a conductive element, placing a dielectric layer over the etch stop layer, and placing a hardmask of a material such as titanium nitride over the dielectric layer. Openings are formed to the etch stop layer, the hardmask material is selectively removed, and the openings are then the material of the etch stop layer is then selectively removed to extend the openings through the etch stop layer.

公开(公告)号：US20180151421A1

公开(公告)日：2018-05-31

申请号：US15464057

申请日：2017-03-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Nai-Chia Chen ,  Chun-Li Chou ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Chun-Hung Chao

IPC分类号： H01L21/768 ,  H01L21/311

CPC分类号： H01L21/76831 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76813 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76883 ,  H01L2221/1047

摘要： A semiconductor device and method of manufacture comprise placing an etch stop layer of a material such as aluminum oxide over a conductive element, placing a dielectric layer over the etch stop layer, and placing a hardmask of a material such as titanium nitride over the dielectric layer. Openings are formed to the etch stop layer, the hardmask material is selectively removed, and the openings are then the material of the etch stop layer is then selectively removed to extend the openings through the etch stop layer.

公开(公告)号：US11923199B2

公开(公告)日：2024-03-05

申请号：US17845193

申请日：2022-06-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Nai-Chia Chen ,  Wan Hsuan Hsu ,  Chia-Wei Wu ,  Neng-Jye Yang ,  Chun-Li Chou

IPC分类号： H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/0337 ,  H01L21/0206 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0338 ,  H01L21/0273 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32137

摘要： Aspects of the disclosure provide a method. The method includes forming a structure over a substrate, and forming a spacer layer on the structure, wherein the spacer layer has a recess. The method includes forming a mask layer over the spacer layer and in the recess, the mask layer including a first layer, a second layer and a third layer. The method includes patterning the third layer of the mask layer, and etching the first layer and the second layer of the mask layer to form an opening to expose the recess of the spacer layer, wherein the opening in the second layer has a first width; and. The method includes removing the second layer using a wet etchant, wherein the opening in the third layer has a second width, and the second with is greater than the first width.

公开(公告)号：US20190097052A1

公开(公告)日：2019-03-28

申请号：US16206348

申请日：2018-11-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Han Chu ,  Nai-Chia Chen ,  Ping-Jung Huang ,  Tsung-Min Chuo ,  Jui-Ming Shih ,  Bi-Ming Yen

IPC分类号： H01L29/78 ,  H01L21/762 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66 ,  H01L21/308 ,  H01L21/306 ,  H01L21/324 ,  H01L29/08 ,  H01L29/165

摘要： An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.

公开(公告)号：US20180151735A1

公开(公告)日：2018-05-31

申请号：US15796398

申请日：2017-10-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Han Chu ,  Nai-Chia Chen ,  Jui-Ming Shih ,  Ping-Jung Huang ,  Tsung-Min Chuo ,  Bi-Ming Yen

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L21/324 ,  H01L21/762 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/66

摘要： An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.

公开(公告)号：US11495684B2

公开(公告)日：2022-11-08

申请号：US16859518

申请日：2020-04-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Han Chu ,  Nai-Chia Chen ,  Ping-Jung Huang ,  Tsung-Min Chuo ,  Jui-Ming Shih ,  Bi-Ming Yen

IPC分类号： H01L21/02 ,  H01L21/308 ,  H01L21/324 ,  H01L21/762 ,  H01L21/306 ,  H01L21/768 ,  H01L21/033 ,  H01L29/78 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/66

摘要： An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.