公开(公告)号：US20230326705A1

公开(公告)日：2023-10-12

申请号：US17716010

申请日：2022-04-08

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Chansyun David YANG

IPC: H01J37/147 ,  H01J37/08 ,  H01J37/305 ,  H01J37/02 ,  H01L21/311 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01J37/1471 ,  H01J37/08 ,  H01J37/3056 ,  H01J37/026 ,  H01L21/31116 ,  H01L21/823431 ,  H01L29/66545 ,  H01J2237/1506 ,  H01J2237/3343

Abstract: An ion beam processing tool includes a plasma source, a grid arrangement positioned proximate the plasma source to generate an ion beam, a beam deflector positioned adjacent the grid arrangement, and a controller configured to control the beam deflector to deflect the ion beam to generate a tilted ion beam. A method includes generating an ion beam, directing the ion beam at a target, deflecting the ion beam in a first direction to remove a first portion of material from the target, and deflecting the ion beam in a second direction different than the first direction to remove a second portion of material from the target.