公开(公告)号：US09391023B2

公开(公告)日：2016-07-12

申请号：US14180417

申请日：2014-02-14

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Yu-Hung Lin ,  Ching-Fu Yeh ,  Chih-Wei Chang

IPC分类号： H01L23/48 ,  H05K7/02 ,  B01J21/18 ,  B82B1/00 ,  H01L21/8234 ,  H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/485

CPC分类号： H01L23/53276 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/32053 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76897 ,  H01L23/485 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for producing a metal contact in a semiconductor device is disclosed. The method comprises depositing a catalyst layer in a via hole, forming a catalyst from the deposited catalyst layer, and growing a carbon nanotube structure above the catalyst in the via hole. The method further comprises forming salicide from the catalyst, applying a chemical mechanical polishing (CMP) process to the carbon nanotube structure to remove top layers of catalyst and nanotube material, and depositing metal material above the carbon nanotube structure. Growing a carbon nanotube structure comprises absorbing a precursor on a surface of the catalyst formed in the via hole, forming a metal-carbon alloy from the catalyst and the precursor, and growing a carbon nanotube structure vertically from the via bottom. The carbon nanotube structure comprises a plurality of carbon nanotubes wherein the diameters of the carbon nanotubes are limited by the catalyst size.

摘要翻译： 公开了一种在半导体器件中制造金属接触的方法。 该方法包括在通孔中沉积催化剂层，从沉积的催化剂层形成催化剂，并在通孔中在催化剂上方生长碳纳米管结构。 该方法还包括从催化剂形成硅化物，向碳纳米管结构施加化学机械抛光（CMP）工艺以除去催化剂和纳米管材料的顶层，以及在碳纳米管结构之上沉积金属材料。 生长碳纳米管结构包括在形成在通孔中的催化剂的表面上吸收前体，从催化剂和前体形成金属 - 碳合金，并从通孔底部垂直生长碳纳米管结构。 碳纳米管结构包括多个碳纳米管，其中碳纳米管的直径受到催化剂尺寸的限制。

公开(公告)号：US20210407852A1

公开(公告)日：2021-12-30

申请号：US16912284

申请日：2020-06-25

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Ching-Fu Yeh ,  Yu-Chen Chan ,  Guanyu Luo ,  Meng-Pei Lu ,  Chao-Hsien Peng ,  Shin-Yi Yang ,  Ming-Han Lee ,  Andy Li

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

摘要： A semiconductor device includes an interconnect structure embedded in a first metallization layer comprising a dielectric material. The interconnect structure includes a first metal material. The semiconductor device includes a first liner structure embedded in the first metallization layer. The first liner structure is extended along one or more boundaries of the interconnect structure in the first metallization layer. The first liner structure includes a second metal material reacted with one or more dopants, the second metal material being different from the first metal material.

公开(公告)号：US12027419B2

公开(公告)日：2024-07-02

申请号：US16912284

申请日：2020-06-25

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Ching-Fu Yeh ,  Yu-Chen Chan ,  Guanyu Luo ,  Meng-Pei Lu ,  Chao-Hsien Peng ,  Shin-Yi Yang ,  Ming-Han Lee ,  Andy Li

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76846 ,  H01L21/76802 ,  H01L21/76862 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238

摘要： A semiconductor device includes an interconnect structure embedded in a first metallization layer comprising a dielectric material. The interconnect structure includes a first metal material. The semiconductor device includes a first liner structure embedded in the first metallization layer. The first liner structure is extended along one or more boundaries of the interconnect structure in the first metallization layer. The first liner structure includes a second metal material reacted with one or more dopants, the second metal material being different from the first metal material.