METAL-INSULATOR-METAL CAPACITORS AND METHODS OF FORMING THE SAME

    公开(公告)号:US20240063253A1

    公开(公告)日:2024-02-22

    申请号:US18501396

    申请日:2023-11-03

    摘要: Integrated circuit (IC) devices include a metal-insulator-metal (MIM) capacitor having a top electrode plate, a bottom electrode plate, and a plurality of intermediate electrode plates between the top electrode plate and the bottom electrode plate. A plurality of dielectric layers may separate each of the electrode plates of the MIM capacitor from adjacent plates of the MIM capacitor. Each of the intermediate electrode plates may have a thickness that is greater than a thickness of the top electrode plate and the bottom electrode plate. By providing multiple intermediate electrode plates between the top and bottom electrode plates of the MIM capacitor, and allocating the greatest plate thicknesses to the intermediate plates, the capacitance density may be increased in a given area of the IC device, which may provide increased performance for the IC device.

    Low-power AOI-based flip-flop
    2.
    发明授权

    公开(公告)号:US11025236B1

    公开(公告)日:2021-06-01

    申请号:US16870001

    申请日:2020-05-08

    IPC分类号: H03K3/037 H03K3/3562

    摘要: A flip-flop circuit using AOI and OAI includes: a MUX unit with a multiplexer selecting between a first signal and a second signal; a master unit with two OAI, wherein the first OAI is coupled between a first node N1 and a third node N3, the second OAI is coupled between a second node N2 and a fourth node N4; a slave unit with two AOI, wherein the first AOI is coupled between the third node N3 and a fifth node N5, the second AOI is coupled between the fourth node N4 and a sixth node N6; and a clock for controlling the two AOI and the two OAI, the clock is connected to the first and the second AOI and the first and the second OAI.

    Metal-insulator-metal capacitors and methods of forming the same

    公开(公告)号:US11848352B2

    公开(公告)日:2023-12-19

    申请号:US17467686

    申请日:2021-09-07

    摘要: Integrated circuit (IC) devices include a metal-insulator-metal (MIM) capacitor having a top electrode plate, a bottom electrode plate, and a plurality of intermediate electrode plates between the top electrode plate and the bottom electrode plate. A plurality of dielectric layers may separate each of the electrode plates of the MIM capacitor from adjacent plates of the MIM capacitor. Each of the intermediate electrode plates may have a thickness that is greater than a thickness of the top electrode plate and the bottom electrode plate. By providing multiple intermediate electrode plates between the top and bottom electrode plates of the MIM capacitor, and allocating the greatest plate thicknesses to the intermediate plates, the capacitance density may be increased in a given area of the IC device, which may provide increased performance for the IC device.