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公开(公告)号:US20240063253A1
公开(公告)日:2024-02-22
申请号:US18501396
申请日:2023-11-03
发明人: Po-Chia Lai , Stefan Rusu , Chun-Yen Lee
IPC分类号: H01G4/30 , H01L21/768 , H01L23/522 , H01L27/08
CPC分类号: H01L28/60 , H01L21/76838 , H01L23/5223 , H01L23/5226 , H01L27/0805
摘要: Integrated circuit (IC) devices include a metal-insulator-metal (MIM) capacitor having a top electrode plate, a bottom electrode plate, and a plurality of intermediate electrode plates between the top electrode plate and the bottom electrode plate. A plurality of dielectric layers may separate each of the electrode plates of the MIM capacitor from adjacent plates of the MIM capacitor. Each of the intermediate electrode plates may have a thickness that is greater than a thickness of the top electrode plate and the bottom electrode plate. By providing multiple intermediate electrode plates between the top and bottom electrode plates of the MIM capacitor, and allocating the greatest plate thicknesses to the intermediate plates, the capacitance density may be increased in a given area of the IC device, which may provide increased performance for the IC device.
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公开(公告)号:US11025236B1
公开(公告)日:2021-06-01
申请号:US16870001
申请日:2020-05-08
发明人: Po-Chia Lai , Chi-Lin Liu , Greg Gruber , Stefan Rusu
IPC分类号: H03K3/037 , H03K3/3562
摘要: A flip-flop circuit using AOI and OAI includes: a MUX unit with a multiplexer selecting between a first signal and a second signal; a master unit with two OAI, wherein the first OAI is coupled between a first node N1 and a third node N3, the second OAI is coupled between a second node N2 and a fourth node N4; a slave unit with two AOI, wherein the first AOI is coupled between the third node N3 and a fifth node N5, the second AOI is coupled between the fourth node N4 and a sixth node N6; and a clock for controlling the two AOI and the two OAI, the clock is connected to the first and the second AOI and the first and the second OAI.
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公开(公告)号:US12100730B2
公开(公告)日:2024-09-24
申请号:US18501396
申请日:2023-11-03
发明人: Po-Chia Lai , Stefan Rusu , Chun-Yen Lee
IPC分类号: H01L23/522 , H01L21/768 , H01L27/08 , H01L49/02
CPC分类号: H01L28/60 , H01L21/76838 , H01L23/5223 , H01L23/5226 , H01L27/0805
摘要: Integrated circuit (IC) devices include a metal-insulator-metal (MIM) capacitor having a top electrode plate, a bottom electrode plate, and a plurality of intermediate electrode plates between the top electrode plate and the bottom electrode plate. A plurality of dielectric layers may separate each of the electrode plates of the MIM capacitor from adjacent plates of the MIM capacitor. Each of the intermediate electrode plates may have a thickness that is greater than a thickness of the top electrode plate and the bottom electrode plate. By providing multiple intermediate electrode plates between the top and bottom electrode plates of the MIM capacitor, and allocating the greatest plate thicknesses to the intermediate plates, the capacitance density may be increased in a given area of the IC device, which may provide increased performance for the IC device.
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公开(公告)号:US11848352B2
公开(公告)日:2023-12-19
申请号:US17467686
申请日:2021-09-07
发明人: Po-Chia Lai , Chun-Yen Lee , Stefan Rusu
IPC分类号: H01L23/522 , H01L21/768 , H01L49/02 , H01L27/08
CPC分类号: H01L28/60 , H01L21/76838 , H01L23/5223 , H01L23/5226 , H01L27/0805
摘要: Integrated circuit (IC) devices include a metal-insulator-metal (MIM) capacitor having a top electrode plate, a bottom electrode plate, and a plurality of intermediate electrode plates between the top electrode plate and the bottom electrode plate. A plurality of dielectric layers may separate each of the electrode plates of the MIM capacitor from adjacent plates of the MIM capacitor. Each of the intermediate electrode plates may have a thickness that is greater than a thickness of the top electrode plate and the bottom electrode plate. By providing multiple intermediate electrode plates between the top and bottom electrode plates of the MIM capacitor, and allocating the greatest plate thicknesses to the intermediate plates, the capacitance density may be increased in a given area of the IC device, which may provide increased performance for the IC device.
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公开(公告)号:US11869991B2
公开(公告)日:2024-01-09
申请号:US17189379
申请日:2021-03-02
发明人: Chih-Tsung Shih , Hau-Yan Lu , Felix Tsui , Stefan Rusu , Chewn-Pu Jou
IPC分类号: H01L31/0232 , H01L31/18 , H01L31/0352
CPC分类号: H01L31/02327 , H01L31/035281 , H01L31/18
摘要: A semiconductor device is provided. The semiconductor device includes a waveguide over a first dielectric layer. A first portion of the waveguide has a first width and a second portion of the waveguide has a second width larger than the first width. The semiconductor device includes a first doped semiconductor structure and a second doped semiconductor structure. The second portion of the waveguide is between the first doped semiconductor structure and the second doped semiconductor structure.
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