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1.发明申请PATTERN GENERATING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT 有权图案生成方法，制造半导体器件的方法和计算机程序产品公开(公告)号：US20100241261A1
公开(公告)日：2010-09-23
申请号：US12705640
申请日：2010-02-15
申请人： Takafumi TAGUCHI , Toshiya Kotani , Michiya Takimoto , Fumiharu Nakajima , Ryota Aburada , Hiromitsu Mashita , Katsumi Iyanagi , Chikaaki Kodama
发明人： Takafumi TAGUCHI , Toshiya Kotani , Michiya Takimoto , Fumiharu Nakajima , Ryota Aburada , Hiromitsu Mashita , Katsumi Iyanagi , Chikaaki Kodama
CPC分类号： G03F1/36
摘要： Pattern formation simulations are performed based on design layout data subjected to OPC processing with a plurality of process parameters set in process conditions. A worst condition of the process conditions is calculated based on risk points extracted from simulation results. The design layout data or the OPC processing is changed such that when a pattern is formed under the worst condition based on the changed design layout data or the changed OPC processing a number of the risk points or a risk degree of the risk points of the pattern is smaller than the simulation result.
摘要翻译： 基于在处理条件下设置的多个处理参数进行OPC处理的设计布局数据执行模式形成模拟。 根据模拟结果提取的风险点计算过程条件的最差条件。 改变设计布局数据或OPC处理，使得当在最坏条件下基于改变的设计布局数据形成图案时，或者改变的OPC处理多个风险点或图案的风险点的风险程度 小于模拟结果。
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2.发明授权Pattern generating method, method of manufacturing semiconductor device, and recording medium 有权图案生成方法，制造半导体器件的方法和记录介质公开(公告)号：US08266552B2
公开(公告)日：2012-09-11
申请号：US12705640
申请日：2010-02-15
申请人： Takafumi Taguchi , Toshiya Kotani , Michiya Takimoto , Fumiharu Nakajima , Ryota Aburada , Hiromitsu Mashita , Katsumi Iyanagi , Chikaaki Kodama
发明人： Takafumi Taguchi , Toshiya Kotani , Michiya Takimoto , Fumiharu Nakajima , Ryota Aburada , Hiromitsu Mashita , Katsumi Iyanagi , Chikaaki Kodama
CPC分类号： G03F1/36
摘要： Pattern formation simulations are performed based on design layout data subjected to OPC processing with a plurality of process parameters set in process conditions. A worst condition of the process conditions is calculated based on risk points extracted from simulation results. The design layout data or the OPC processing is changed such that when a pattern is formed under the worst condition based on the changed design layout data or the changed OPC processing a number of the risk points or a risk degree of the risk points of the pattern is smaller than the simulation result.
摘要翻译： 基于在处理条件下设置的多个处理参数进行OPC处理的设计布局数据来执行模式形成模拟。 根据模拟结果提取的风险点计算过程条件的最差条件。 改变设计布局数据或OPC处理，使得当在最坏条件下基于改变的设计布局数据形成图案时，或者改变的OPC处理多个风险点或图案的风险点的风险程度 小于模拟结果。
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3.发明申请MASK PATTERN DETERMINING METHOD, MASK MANUFACTURING METHOD, AND DEVICE MANUFACTURING METHOD 审中-公开掩模图形测定方法，掩模制造方法及装置制造方法公开(公告)号：US20110065030A1
公开(公告)日：2011-03-17
申请号：US12880507
申请日：2010-09-13
申请人： Toshiya KOTANI , Fumiharu Nakajima , Ryota Aburada , Takafumi Taguchi , Hiromitsu Mashita , Michiya Takimoto , Chikaaki Kodama
发明人： Toshiya KOTANI , Fumiharu Nakajima , Ryota Aburada , Takafumi Taguchi , Hiromitsu Mashita , Michiya Takimoto , Chikaaki Kodama
CPC分类号： G06F17/5009 , G03F1/68 , G03F7/70425
摘要： According to one embodiment, a mask pattern determining method includes a mask-pattern dimension variation amount of a first photomask is derived. Moreover, a correspondence relationship between a target dimension value of an on-substrate test pattern formed by using a second photomask and a dimension allowable variation amount of a mask pattern formed on the second photomask is derived. Then, it is determined whether pattern formation is possible with a pattern dimension that needs to be formed when performing the pattern formation on a substrate by using the first photomask based on the mask-pattern dimension variation amount and the correspondence relationship.
摘要翻译： 根据一个实施例，掩模图案确定方法包括导出第一光掩模的掩模图案尺寸变化量。 此外，导出通过使用第二光掩模形成的基板上测试图案的目标尺寸值与形成在第二光掩模上的掩模图案的尺寸允许变化量之间的对应关系。 然后，基于掩模图案尺寸变化量和对应关系，通过使用第一光掩模在基板上进行图案形成时，确定是否可以形成图案尺寸。
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4.发明申请SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, COMPUTER PROGRAM PRODUCT, AND EXPOSURE-PARAMETER CREATING METHOD 审中-公开半导体器件制造方法，计算机程序产品和曝光参数创建方法公开(公告)号：US20100216064A1
公开(公告)日：2010-08-26
申请号：US12683943
申请日：2010-01-07
CPC分类号： G03F7/70441 , G03F1/70 , G03F7/70525
摘要： A semiconductor-device manufacturing method includes: correcting a systematic component of process proximity effect, which occurs in a process other than exposure processing to thereby set a target pattern after exposure; adjusting an exposure parameter such that a difference between a dimension of the target pattern and a pattern dimension after the exposure is within tolerance; and forming, when an exposure margin calculated from the exposure parameter by using the exposure the random component of fluctuation in the process proximity effect is within the tolerance, a pattern on a semiconductor substrate with the adjusted exposure parameter.
摘要翻译： 半导体器件制造方法包括：校正在曝光处理之外的处理中发生的过程接近效应的系统分量，从而在曝光之后设置目标图案; 调整曝光参数，使得目标图案的尺寸与曝光后的图案尺寸之间的差在公差之内; 并且当通过使用曝光从曝光参数计算出的曝光余量时，在处理接近效应中的随机波动分量在容差内的情况下，形成具有调整曝光参数的半导体衬底上的图案。
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5.发明授权Exposure determining method, method of manufacturing semiconductor device, and computer program product 有权曝光确定方法，制造半导体器件的方法和计算机程序产品公开(公告)号：US08440376B2
公开(公告)日：2013-05-14
申请号：US13007238
申请日：2011-01-14
CPC分类号： G03F7/70425 , G03F7/70558
摘要： According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.
摘要翻译： 根据一个实施例，获取形成在掩模上的掩模图案与期望的掩模图案之间的二维形状参数的偏差量分布作为掩模图案图。 使得当在掩模经受曝光拍摄以形成基板上的图案和在基板上形成图案之后形成的基板上的图案之间的二维形状参数的偏移量适合在预定范围内时，确定曝光 基于掩模图案图，在基板上形成图案的曝光中的每个位置。
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6.发明申请EXPOSURE DETERMINING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT 有权曝光测定方法，制造半导体器件的方法和计算机程序产品公开(公告)号：US20110177458A1
公开(公告)日：2011-07-21
申请号：US13007238
申请日：2011-01-14
CPC分类号： G03F7/70425 , G03F7/70558
摘要： According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.
摘要翻译： 根据一个实施例，获取形成在掩模上的掩模图案与期望的掩模图案之间的二维形状参数的偏差量分布作为掩模图案图。 使得当在掩模经受曝光拍摄以形成基板上的图案和在基板上形成图案之后形成的基板上的图案之间的二维形状参数的偏移量适合在预定范围内时，确定曝光 基于掩模图案图，在基板上形成图案的曝光中的每个位置。
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