Cleaning liquid for lithography and method for forming wiring
    1.
    发明授权
    Cleaning liquid for lithography and method for forming wiring 有权
    光刻用清洗液及布线形成方法

    公开(公告)号:US08206509B2

    公开(公告)日:2012-06-26

    申请号:US12958295

    申请日:2010-12-01

    IPC分类号: B08B3/04 C11D7/32 C11D7/50

    摘要: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to tungsten, and excellent removal performance in relation to a resist film or the like, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water-soluble organic solvent, water, an inorganic salt and an anti-corrosion agent represented by a general formula (1) below. In the general formula (1), R1 represents an alkyl group or an aryl group having 1-17 carbon atoms, and R2 represents an alkyl group having 1-13 carbon atoms.

    摘要翻译: 本发明提供了一种用于光刻的清洗液,其与钨相比具有优异的防腐蚀性能,并且与抗蚀剂膜等相比具有优异的去除性能,以及使用光刻用清洁液形成布线的方法。 本发明的光刻用清洗液含有下述通式(1)表示的季铵氢氧化物,水溶性有机溶剂,水,无机盐和防腐蚀剂。 在通式(1)中,R 1表示烷基或具有1-17个碳原子的芳基,R 2表示具有1-13个碳原子的烷基。

    Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film
    2.
    发明授权
    Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film 有权
    氮化钛剥离液和氮化钛涂层剥离方法

    公开(公告)号:US08623236B2

    公开(公告)日:2014-01-07

    申请号:US12171198

    申请日:2008-07-10

    IPC分类号: C09K13/00 C03C25/68

    CPC分类号: C09K13/08 H01L21/32134

    摘要: A titanium nitride-stripping liquid for stripping a titanium nitride coating film, the titanium nitride-stripping liquid being capable of stripping a titanium nitride coating film even in a semiconductor multilayer laminate having particularly a layer that includes tungsten or a tungsten alloy, without corrosion of this layer is provided, and furthermore, a titanium nitride-stripping liquid which can strip a titanium nitride coating film without affecting an insulating layer is provided. A titanium nitride-stripping liquid including hydrofluoric acid, hydrogen peroxide and water, and further including an inorganic acid other than hydrofluoric acid. According to the present invention, since the titanium nitride-stripping liquid includes an inorganic acid other than hydrofluoric acid, a titanium nitride coating film can be stripped even in the case in which a semiconductor multilayer laminate has a layer that includes tungsten or a tungsten alloy, without corrosion of the layer by the titanium nitride-stripping liquid.

    摘要翻译: 一种用于剥离氮化钛涂层的氮化钛剥离液,即使在特别是包含钨或钨合金的层的半导体多层叠层中,氮化钛剥离液也能够剥离氮化钛涂膜,而不会腐蚀 提供该层,此外,提供可以不影响绝缘层而剥离氮化钛涂膜的氮化钛剥离液。 包含氢氟酸,过氧化氢和水的氮化钛剥离液,还包含氢氟酸以外的无机酸。 根据本发明,由于氮化钛剥离液含有氢氟酸以外的无机酸,所以即使在半导体多层层叠体具有包含钨或钨合金的层的情况下也可以剥离氮化钛被膜 ,不会被氮化钛剥离液体腐蚀。

    TITANIUM NITRIDE-STRIPPING LIQUID, AND METHOD FOR STRIPPING TITANIUM NITRIDE COATING FILM
    3.
    发明申请
    TITANIUM NITRIDE-STRIPPING LIQUID, AND METHOD FOR STRIPPING TITANIUM NITRIDE COATING FILM 有权
    氮化钛剥离液和氮化钛涂层膜剥离方法

    公开(公告)号:US20090017636A1

    公开(公告)日:2009-01-15

    申请号:US12171198

    申请日:2008-07-10

    IPC分类号: H01L21/306 C09K13/08

    CPC分类号: C09K13/08 H01L21/32134

    摘要: A titanium nitride-stripping liquid for stripping a titanium nitride coating film, the titanium nitride-stripping liquid being capable of stripping a titanium nitride coating film even in a semiconductor multilayer laminate having particularly a layer that includes tungsten or a tungsten alloy, without corrosion of this layer is provided, and furthermore, a titanium nitride-stripping liquid which can strip a titanium nitride coating film without affecting an insulating layer is provided. A titanium nitride-stripping liquid including hydrofluoric acid, hydrogen peroxide and water, and further including an inorganic acid other than hydrofluoric acid. According to the present invention, since the titanium nitride-stripping liquid includes an inorganic acid other than hydrofluoric acid, a titanium nitride coating film can be stripped even in the case in which a semiconductor multilayer laminate has a layer that includes tungsten or a tungsten alloy, without corrosion of the layer by the titanium nitride-stripping liquid.

    摘要翻译: 一种用于剥离氮化钛涂层的氮化钛剥离液,即使在特别是包含钨或钨合金的层的半导体多层叠层中,氮化钛剥离液也能够剥离氮化钛涂膜,而不会腐蚀 提供该层,此外,提供可以不影响绝缘层而剥离氮化钛涂膜的氮化钛剥离液。 包含氢氟酸,过氧化氢和水的氮化钛剥离液,还包含氢氟酸以外的无机酸。 根据本发明,由于氮化钛剥离液含有氢氟酸以外的无机酸,所以即使在半导体多层层叠体具有包含钨或钨合金的层的情况下也可以剥离氮化钛被膜 ,不会被氮化钛剥离液体腐蚀。

    Unbaked laminate for producing front plate of plasma display device, and method for producing front plate of plasma display device
    8.
    发明授权
    Unbaked laminate for producing front plate of plasma display device, and method for producing front plate of plasma display device 失效
    用于制造等离子体显示装置的前板的未烘烤的层压板以及等离子体显示装置的前板的制造方法

    公开(公告)号:US07563146B2

    公开(公告)日:2009-07-21

    申请号:US10526491

    申请日:2004-05-26

    IPC分类号: H01J9/24 H01J9/26 H01J17/49

    CPC分类号: H01J9/242 H01J11/12 H01J11/36

    摘要: The present invention provides an unbaked laminate for producing a front plate (1) of a plasma display device, and a method for producing such a front plate (1). The laminate includes a burnable intermediate layer (14), and may include an unbaked dielectric layer (12A) and a photosensitive unbaked spacer material layer (16A). The burnable intermediate layer (14) positions between the dielectric layer (12) and the spacer material layer (16), and may burn up upon baking treatment, enabling removal of residues of the spacer material layer in the region subjected to its removal.

    摘要翻译: 本发明提供了一种用于制造等离子体显示装置的前板(1)的未烘烤层压板,以及用于制造这种前板(1)的方法。 层压体包括可燃的中间层(14),并且可以包括未烘烤的电介质层(12A)和感光未烘烤间隔物材料层(16A)。 可燃中间层(14)位于电介质层(12)和间隔材料层(16)之间,并且可以在烘烤处理时燃烧,从而能够去除在其去除区域中的间隔材料层的残留物。

    Photoresist stripping solution and method of treating substrate with the same
    9.
    发明申请
    Photoresist stripping solution and method of treating substrate with the same 审中-公开
    光刻胶剥离溶液及其处理方法

    公开(公告)号:US20070105035A1

    公开(公告)日:2007-05-10

    申请号:US11645172

    申请日:2006-12-26

    IPC分类号: G03C11/12

    CPC分类号: G03F7/423

    摘要: Disclosed is a photoresist stripping solution comprising: (a) a salt of hydrofluoric acid with a base free from metallic ions; and (b) a water-soluble organic solvent, wherein the content of the component (a) is 0.001 to 0.1 mass % based on the total mass of the photoresist stripping solution. Also disclosed is a method of treating a substrate, which comprises: forming a photoresist film on a substrate; subjecting it to light exposure and then to development; etching thereof with a photoresist pattern as a mask pattern; ashing the mask; and bringing the photoresist stripping solution into contact with the substrate.

    摘要翻译: 公开了一种光致抗蚀剂剥离溶液,其包含:(a)氢氟酸与不含金属离子的碱的盐; 和(b)水溶性有机溶剂,其中组分(a)的含量相对于光致抗蚀剂剥离溶液的总质量为0.001〜0.1质量%。 还公开了一种处理衬底的方法,其包括:在衬底上形成光致抗蚀剂膜; 使其曝光,然后进行开发; 用光刻胶图案作为掩模图案进行蚀刻; 灰化面具; 并使光致抗蚀剂剥离溶液与基材接触。