公开(公告)号：US20140038395A1

公开(公告)日：2014-02-06

申请号：US14001797

申请日：2011-08-31

申请人： Takahiro Kozawa ,  Kenji Nakashima ,  Keeyoung Jun ,  Takahiro Ito

发明人： Takahiro Kozawa ,  Kenji Nakashima ,  Keeyoung Jun ,  Takahiro Ito

IPC分类号： C23C16/24 ,  H01L21/02

CPC分类号： H01L21/0262 ,  C01B33/027 ,  C01B33/029 ,  C23C16/24 ,  C23C16/452 ,  C23C16/45561 ,  H01L21/0237 ,  H01L21/02532

摘要： A vapor deposition device includes a vapor deposition chamber, a heating chamber, a mixing chamber, a first reservoir for storing trichlorosilane gas, and a second reservoir for storing silane gas that reacts with hydrochloric acid gas. The heating chamber communicates with the first reservoir and the mixing chamber, heats the trichlorosilane gas and then supplies the heated gas to the mixing chamber. The mixing chamber communicates with the second reservoir and the vapor deposition chamber, mixes the heated gas supplied from the heating chamber and the silane gas and then supplies the mixed gas to the vapor deposition chamber. A temperature in the heating chamber is higher than a temperature in the mixing chamber.

摘要翻译： 气相沉积装置包括蒸镀室，加热室，混合室，用于储存三氯硅烷气体的第一储存器和用于储存与盐酸气体反应的硅烷气体的第二储存器。 加热室与第一储存器和混合室连通，加热三氯硅烷气体，然后将加热的气体供应到混合室。 混合室与第二储存器和气相沉积室连通，将从加热室供应的加热气体与硅烷气体混合，然后将混合气体供应到气相沉积室。 加热室中的温度高于混合室中的温度。

公开(公告)号：US20130040441A1

公开(公告)日：2013-02-14

申请号：US13642973

申请日：2010-12-08

申请人： Takahiro Ito ,  Takahiro Kozawa ,  Kenji Nakashima ,  Keeyoung Jun

发明人： Takahiro Ito ,  Takahiro Kozawa ,  Kenji Nakashima ,  Keeyoung Jun

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C23C16/24 ,  C30B29/06 ,  C30B33/06 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02532

摘要： A process for supplying a mixed material gas that includes a chlorosilane gas and a carrier gas to a surface of a substrate heated at 1200 to 1400° C. from a direction perpendicular to the surface is provided. A supply rate of the chlorosilane gas is equal to or more than 200 μmol per minute per 1 cm2 of the surface of the substrate. The carrier gas includes a hydrogen gas and at least one or more gases selected from argon, xenon, krypton and neon.

摘要翻译： 提供了一种从垂直于表面的方向向包含氯硅烷气体和载气的混合材料气体供给到加热到1200至1400℃的基板的表面的方法。 氯硅烷气体的供给速度等于或大于200μmol/分钟/ 1cm 2的基材表面。 载气包括氢气和选自氩，氙，氪和氖的至少一种或多种气体。

公开(公告)号：US08956458B2

公开(公告)日：2015-02-17

申请号：US14001797

申请日：2011-08-31

申请人： Takahiro Kozawa ,  Kenji Nakashima ,  Keeyoung Jun ,  Takahiro Ito

发明人： Takahiro Kozawa ,  Kenji Nakashima ,  Keeyoung Jun ,  Takahiro Ito

IPC分类号： C23C16/00 ,  H01L21/02 ,  C01B33/027 ,  C01B33/029 ,  C23C16/24 ,  C23C16/452 ,  C23C16/455

CPC分类号： H01L21/0262 ,  C01B33/027 ,  C01B33/029 ,  C23C16/24 ,  C23C16/452 ,  C23C16/45561 ,  H01L21/0237 ,  H01L21/02532

摘要： A vapor deposition device includes a vapor deposition chamber, a heating chamber, a mixing chamber, a first reservoir for storing trichlorosilane gas, and a second reservoir for storing silane gas that reacts with hydrochloric acid gas. The heating chamber communicates with the first reservoir and the mixing chamber, heats the trichlorosilane gas and then supplies the heated gas to the mixing chamber. The mixing chamber communicates with the second reservoir and the vapor deposition chamber, mixes the heated gas supplied from the heating chamber and the silane gas and then supplies the mixed gas to the vapor deposition chamber. A temperature in the heating chamber is higher than a temperature in the mixing chamber.

摘要翻译： 气相沉积装置包括蒸镀室，加热室，混合室，用于储存三氯硅烷气体的第一储存器和用于储存与盐酸气体反应的硅烷气体的第二储存器。 加热室与第一储存器和混合室连通，加热三氯硅烷气体，然后将加热的气体供应到混合室。 混合室与第二储存器和气相沉积室连通，将从加热室供应的加热气体与硅烷气体混合，然后将混合气体供应到气相沉积室。 加热室中的温度高于混合室中的温度。

公开(公告)号：US08703590B2

公开(公告)日：2014-04-22

申请号：US13642973

申请日：2010-12-08

申请人： Takahiro Ito ,  Takahiro Kozawa ,  Kenji Nakashima ,  Keeyoung Jun

发明人： Takahiro Ito ,  Takahiro Kozawa ,  Kenji Nakashima ,  Keeyoung Jun

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C23C16/24 ,  C30B29/06 ,  C30B33/06 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02532

摘要： A process for supplying a mixed material gas that includes a chlorosilane gas and a carrier gas to a surface of a substrate heated at 1200 to 1400° C. from a direction perpendicular to the surface is provided. A supply rate of the chlorosilane gas is equal to or more than 200 μmol per minute per 1 cm2 of the surface of the substrate. The carrier gas includes a hydrogen gas and at least one or more gases selected from argon, xenon, krypton and neon.

摘要翻译： 提供了一种从垂直于表面的方向向包含氯硅烷气体和载气的混合材料气体供给到加热到1200至1400℃的基板的表面的方法。 氯硅烷气体的供给速度等于或大于200μmol/分钟/ 1cm 2的基材表面。 载气包括氢气和选自氩，氙，氪和氖的至少一种或多种气体。

公开(公告)号：US20070163503A1

公开(公告)日：2007-07-19

申请号：US11635600

申请日：2006-12-08

申请人： Keeyoung Jun ,  Hitoshi Sakamoto ,  Suguru Noda

发明人： Keeyoung Jun ,  Hitoshi Sakamoto ,  Suguru Noda

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： C23C16/4488 ,  C23C16/14

摘要： A thin film preparation apparatus performs film formation by supplying a precursor CuCl with increased supply accuracy and Cl* from a material supply apparatus outside a chamber into the chamber with the use of a member to be etched, which has been temperature-controlled independently, and depositing a Cu component of the CuCl on a substrate, without complicating temperature control (simply by heating control by a heater), and without the influence of radiation from a plasma.

摘要翻译： 薄膜制备装置通过使用被独立地进行温度控制的被蚀刻部件，将具有增加的供给精度的前体CuCl和Cl *从室内的材料供给装置供应到室中来进行成膜，以及 将CuCl的Cu成分沉积在基板上，而不会使温度控制复杂化（简单地通过加热器的加热控制），并且不受来自等离子体的辐射的影响。