摘要:
Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm−1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm−1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm−1 measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.
摘要:
A multilayer body which includes a low-resistance metal layer having a low electrical resistance, excellent thermal resistance and low surface irregularity is provided. The multilayer body includes a substrate, and a low-resistance metal layer which is formed on the substrate and has a single-layer structure or a multilayer structure of two or more sublayers. The low-resistance metal layer includes a gold-containing layer or sublayer composed of gold and another metal.
摘要:
A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.
摘要:
A piezoelectric film of the present invention has a surface roughness value P-V of not more than 170.0 nm, which is defined by a difference between a maximum height (peak value P) and a minimum height (valley value V) on a film surface, a piezoelectric constant d31 greater than 150 pC/N and a breakdown voltage of 80 V or more, which is defined by an applied voltage that results in a current value of 1 μA or more.
摘要:
A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.
摘要:
A method of driving a piezoelectric actuator including: a piezoelectric element containing a piezoelectric body having coercive field points on a negative field side and a positive field side respectively and having asymmetrical bipolar polarization—electric field hysteresis characteristics in which an absolute value of a coercive electric field on the negative field side and a coercive electric field value on the positive field side are mutually different, and a pair of electrodes for applying voltage to the piezoelectric body; and a diaphragm which externally transmits, as displacement, distortion produced in the piezoelectric body when the voltage is applied to the piezoelectric body, includes the step of driving the piezoelectric actuator between a positive drive voltage and a negative drive voltage in a range not exceeding the coercive electric field, from among the positive and negative coercive electric fields, which has the larger absolute value.
摘要:
A piezoelectric device includes a substrate; and a laminated film formed above the substrate. The laminated film includes a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order, and the lower electrode layer is a metal electrode layer containing as one or more main components one or more nonnoble metals and/or one or more nonnoble alloys. Preferably, the one or more main components are one or more of the metals Cr, W, Ti, Al, Fe, Mo, In, Sn, Ni, Cu, Co, and Ta, and alloys of the metals.
摘要:
A piezoelectric device includes a substrate; and a laminated film formed above the substrate. The laminated film includes a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order, and the lower electrode layer is a metal electrode layer containing as one or more main components one or more nonnoble metals and/or one or more nonnoble alloys. Preferably, the one or more main components are one or more of the metals Cr, W, Ti, Al, Fe, Mo, In, Sn, Ni, Cu, Co, and Ta, and alloys of the metals.
摘要:
A multilayer body which includes a low-resistance metal layer having a low electrical resistance, excellent thermal resistance and low surface irregularity is provided. The multilayer body includes a substrate, and a low-resistance metal layer which is formed on the substrate and has a single-layer structure or a multilayer structure of two or more sublayers. The low-resistance metal layer includes a gold-containing layer or sublayer composed of gold and another metal.
摘要:
A piezoelectric film of the present invention has a surface roughness value P-V of not more than 170.0 nm, which is defined by a difference between a maximum height (peak value P) and a minimum height (valley value V) on a film surface, a piezoelectric constant d31 greater than 150 pC/N and a breakdown voltage of 80 V or more, which is defined by an applied voltage that results in a current value of 1 μA or more.