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    RESIST COMPOSITION AND PATTERNING PROCESS
    3.
    发明申请
    RESIST COMPOSITION AND PATTERNING PROCESS 有权
    耐腐蚀组合物和方法

    公开(公告)号：US20070148584A1

    公开(公告)日：2007-06-28

    申请号：US10852157

    申请日：2004-05-25

    申请人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba

    发明人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0392 ,  G03F7/0397

    摘要： Resist compositions comprising as the base resin a polymer having alkoxyisobutoxy as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in fine feature size regions. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.

    摘要翻译： 包含作为基础树脂的具有烷氧基异丁氧基作为反应性基团的聚合物的抗蚀剂组合物，其在酸的作用下可分解以增加在碱中的溶解度，其优点包括显着提高曝光前后碱溶解速率的对比度，高灵敏度和 高分辨率的精细特征尺寸区域。 组合物最适合用作VLSI制造中的微图案化学放大抗蚀剂材料。

    Resist composition and patterning process
    4.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US07232638B2

    公开(公告)日：2007-06-19

    申请号：US10427939

    申请日：2003-05-02

    申请人： Jun Hatakeyama ,  Hideshi Kurihara ,  Takanobu Takeda ,  Osamu Watanabe

    发明人： Jun Hatakeyama ,  Hideshi Kurihara ,  Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0758 ,  G03F7/0397

    摘要： Chemically amplified positive resist compositions comprising a polymer obtained by copolymerizing a silicon-containing monomer with a polar monomer having a value of LogP or cLogP of up to 0.6 and optionally hydroxystyrene, a photoacid generator and an organic solvent are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching.

    摘要翻译： 包含通过使含硅单体与LogP或cLogP值高达0.6的极性单体和任选的羟基苯乙烯，光酸产生剂和有机溶剂共聚获得的聚合物的化学扩增的正性抗蚀剂组合物对高能辐射敏感， 在小于300nm的波长下具有高灵敏度和分辨率，并且改善了耐氧等离子体蚀刻的耐受性。

    Polymer, resist composition and patterning process
    5.
    发明授权
    Polymer, resist composition and patterning process 有权
    聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US07135269B2

    公开(公告)日：2006-11-14

    申请号：US10765919

    申请日：2004-01-29

    申请人： Jun Hatakeyama ,  Takanobu Takeda ,  Osamu Watanabe

    发明人： Jun Hatakeyama ,  Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： G03C1/73 ,  G03F7/039 ,  G03F7/30 ,  G03F7/36 ,  C08F30/08 ,  C08F24/00

    CPC分类号： G03F7/0395 ,  C08F220/28 ,  C08F222/20 ,  C08F230/08 ,  C08F232/08 ,  G03F7/0397 ,  G03F7/0758

    摘要： A polymer comprising recurring units containing silicon and recurring units having a substituent group of formula (1) is novel wherein A1 is a divalent group selected from furandiyl, tetrahydrofurandiyl and oxanorbornanediyl, R1 and R2 are selected from monovalent C1–C10 hydrocarbon groups, or R1 and R2 taken together may form an aliphatic hydrocarbon ring with the carbon atom, and R3 is hydrogen or a monovalent C1–C10 hydrocarbon group which may contain a hetero atom. The polymer is useful as a base resin to formulate a resist composition which is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength of less than 300 nm as well as satisfactory oxygen plasma etching resistance.

    摘要翻译： 含有硅的重复单元和具有式（1）的取代基的重复单元的聚合物是新颖的，其中A 1是选自呋喃二基，四氢呋喃基和氧杂甘露二烷基的二价基团，R 1， SUP>和R 2选自单价C 1 -C 10烃基或R 1和R 2 一起可以与碳原子一起形成脂族烃环，R 3是氢或一价C 1 -C 1 - 10个可以含有杂原子的烃基。 聚合物可用作基础树脂以配制对高能辐射敏感的抗蚀剂组合物，并且在小于300nm的波长下具有优异的灵敏度和分辨率以及满意的氧等离子体耐蚀刻性。

    Preparation of polymer, and resist composition using the polymer
    6.
    发明授权
    Preparation of polymer, and resist composition using the polymer 有权
    聚合物的制备和使用聚合物的抗蚀剂组合物

    公开(公告)号：US06835804B2

    公开(公告)日：2004-12-28

    申请号：US10003121

    申请日：2001-12-06

    申请人： Takanobu Takeda ,  Osamu Watanabe

    发明人： Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： C08F606

    CPC分类号： G03F7/0392 ,  C08F8/12 ,  C08F2800/20 ,  C08F212/14

    摘要： A polymer comprising recurring units of formula (2) is prepared by effecting deblocking reaction on a polymer comprising recurring units of formula (1) in the presence of an acid catalyst. In the formulae, R1 and R4 are H or methyl, R2 and R3 are C1-C10 alkyl, or R2 and R3 may form a ring, R5 is H, hydroxyl, alkyl, alkoxy or halogen, R6 and R7 are H, methyl, alkoxycarbonyl, cyano or halogen, R8 is C4-C20 tertiary alkyl, n is an integer of 0 to 4, p is a positive number, q and r each are 0 or a positive number, exclusive of q=r=0, p1 is a positive number, p2 is 0 or a positive number, and p1+p2=p. The polymer thus produced has a narrower molecular weight distribution than polymers produced by the prior art methods. A resist composition comprising the polymer as a base resin has advantages including a dissolution contrast of resist film, high resolution, exposure latitude, process flexibility, good pattern profile after exposure, and minimized line edge roughness.

    摘要翻译： 包含式（2）的重复单元的聚合物通过在酸催化剂存在下对包含式（1）的重复单元的聚合物进行解封反应来制备。在式中，R 1和R 4是H 或甲基，R 2和R 3是C 1 -C 10烷基，或R 2和R 3可以形成环，R 5是H，羟基，烷基，烷氧基或卤素， 6>和R 7是H，甲基，烷氧基羰基，氰基或卤素，R 8是C 4 -C 20叔烷基，n是0至4的整数，p是正数，q和r各自为0 或正数，不包括q = r = 0，p1为正数，p2为0或正数，p1 + p2 = p。 如此制备的聚合物具有比通过现有技术方法制备的聚合物更窄的分子量分布。 包含聚合物作为基础树脂的抗蚀剂组合物具有抗蚀剂膜的溶解对比度，高分辨率，曝光宽容度，工艺柔韧性，曝光后的良好图案轮廓和最小化线边缘粗糙度的优点。

    Preparation process of chemically amplified resist composition
    9.
    发明授权
    Preparation process of chemically amplified resist composition 有权
    化学增幅抗蚀剂组合物的制备工艺

    公开(公告)号：US08367295B2

    公开(公告)日：2013-02-05

    申请号：US12110651

    申请日：2008-04-28

    申请人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

    发明人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0048 ,  G03F7/0382 ,  G03F7/0397

    摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.

    摘要翻译： 提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。 本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于 将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。

    PREPARATION PROCESS OF CHEMICALLY AMPLIFIED RESIST COMPOSITION
    10.
    发明申请
    PREPARATION PROCESS OF CHEMICALLY AMPLIFIED RESIST COMPOSITION 有权
    化学稳定组分的制备方法

    公开(公告)号：US20080274422A1

    公开(公告)日：2008-11-06

    申请号：US12110651

    申请日：2008-04-28

    申请人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

    发明人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0048 ,  G03F7/0382 ,  G03F7/0397

    摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.

    摘要翻译： 提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。 本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于 将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。