公开(公告)号：US06641975B2

公开(公告)日：2003-11-04

申请号：US09928455

申请日：2001-08-14

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Kazuhiro Hirahara ,  Kazunori Maeda ,  Wataru Kusaki ,  Shigehiro Nagura

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Kazuhiro Hirahara ,  Kazunori Maeda ,  Wataru Kusaki ,  Shigehiro Nagura

IPC分类号： G03C173

CPC分类号： C08F220/30 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115

摘要： A ternary copolymer of hydroxystyrene, tertiary alkyl (meth)acrylate and substitutable phenoxyalkyl (meth)acrylate having a Mw of 1,000-500,000 is blended as a base resin to formulate a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, a satisfactory pattern profile after exposure, high etching resistance, and process adaptability.

公开(公告)号：US06737214B2

公开(公告)日：2004-05-18

申请号：US09800512

申请日：2001-03-08

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Kazuhiro Hirahara ,  Katsuya Takemura ,  Wataru Kusaki ,  Akihiro Seki

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Kazuhiro Hirahara ,  Katsuya Takemura ,  Wataru Kusaki ,  Akihiro Seki

IPC分类号： G03C173

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/115

摘要： A chemical amplification positive resist composition comprising a polymeric mixture of a polyhydroxystyrene derivative having a Mw of 1000-500,000 and a copolymer of hydroxystyrene and (meth)acrylate having a Mw of 1000-500,000, as a base resin, has improved dry etching resistance, high sensitivity, high resolution, and process adaptability, and is suppressed in the slimming of pattern films after development with aqueous base.

摘要翻译： 包含Mw为1000-500,000的聚羟基苯乙烯衍生物和Mw为1000-500,000的羟基苯乙烯和（甲基）丙烯酸酯的共聚物的聚合物混合物作为基础树脂的化学放大正性抗蚀剂组合物具有改善的耐干蚀刻性， 高灵敏度，高分辨率和工艺适应性，并且在用碱性水溶液显影后抑制图案膜的减薄。

公开(公告)号：US06861198B2

公开(公告)日：2005-03-01

申请号：US10351097

申请日：2003-01-23

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Wataru Kusaki ,  Ryuji Koitabashi

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Wataru Kusaki ,  Ryuji Koitabashi

IPC分类号： C08F12/22 ,  C08F20/12 ,  C08F32/08 ,  G03F7/004 ,  G03F7/033 ,  G03F7/038 ,  H01L21/027 ,  G03C1/72 ,  C03F7/033

CPC分类号： G03F7/0382 ,  Y10S430/106 ,  Y10S430/143

摘要： A negative resist material, which comprises at least a high polymer containing repeating units represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000. There is provided a negative resist material, in particular, a negative resist material of chemical amplification type, which shows high sensitivity, resolution, exposure latitude and process adaptability as well as good pattern shape after light exposure, and further shows superior etching resistance.

摘要翻译： 一种负型抗蚀剂材料，其至少包含含有由以下通式（1）表示的重均单元和重均分子量为1,000至500,000的高聚合物。 提供了负的抗蚀剂材料，特别是具有化学放大型的负型抗蚀剂材料，其在曝光后显示出高灵敏度，分辨率，曝光宽容度和工艺适应性以及良好的图案形状，并且还显示出优异的耐蚀刻性。

公开(公告)号：US06949323B2

公开(公告)日：2005-09-27

申请号：US10283263

申请日：2002-10-30

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Kazunori Maeda ,  Hiroshi Miyakoshi

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Kazunori Maeda ,  Hiroshi Miyakoshi

IPC分类号： G03F7/032 ,  C08F12/22 ,  G03F7/039 ,  H01L21/027 ,  G03F7/004

CPC分类号： G03F7/0397 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111

摘要： Resist compositions comprising as the base resin a polymer using tert-amyloxystyrene as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in the baking temperature range of 100-110° C. which is unachievable with tert-butoxystyrene. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.

摘要翻译： 包含作为基础树脂的聚合物的抗蚀剂组合物使用在酸的作用下可分解的叔淀粉氧基苯乙烯作为反应性基团以增加在碱中的溶解度的优点包括显着增强曝光前后碱溶解速率的对比度，高灵敏度 ，并且在100-110℃的烘烤温度范围内具有高分辨率，其不能用叔丁氧基苯乙烯进行。 组合物最适合用作VLSI制造中的微图案化学放大抗蚀剂材料。

公开(公告)号：US20060183051A1

公开(公告)日：2006-08-17

申请号：US11339590

申请日：2006-01-26

申请人： Takanobu Takeda ,  Eiji Fukuda ,  Kazunori Maeda ,  Satoshi Watanabe

发明人： Takanobu Takeda ,  Eiji Fukuda ,  Kazunori Maeda ,  Satoshi Watanabe

IPC分类号： G03C1/76

CPC分类号： G03F7/0392

摘要： The present invention-provides a positive resist composition wherein at least a polymer included in a base resin has a repeating unit with an acid labile group having absorption at the 248 nm wavelength light and the repeating unit is included with a ratio of 1-10% of all repeating units of polymers included in the base resin. There can be provided a positive resist composition with equal or higher sensitivity and resolution than those of conventional positive resist compositions, and in particular, by which a pattern profile on a substrate with high reflectivity is excellent and generation of a standing wave and line edge roughness are reduced.

摘要翻译： 本发明提供一种正型抗蚀剂组合物，其中至少包含在基础树脂中的聚合物具有在248nm波长的光下具有吸收性的酸不稳定基团的重复单元，重复单元的比例为1-10％ 包括在基础树脂中的聚合物的所有重复单元。 可以提供与常规正性抗蚀剂组合物相同或更高的灵敏度和分辨率的正性抗蚀剂组合物，特别是通过其具有高反射率的基板上的图案轮廓优异并产生驻波和线边缘粗糙度 减少了

公开(公告)号：US07501223B2

公开(公告)日：2009-03-10

申请号：US11902760

申请日：2007-09-25

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Keiichi Masunaga ,  Tamotsu Watanabe

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Keiichi Masunaga ,  Tamotsu Watanabe

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0397 ,  Y10S430/106

摘要： There is disclosed a polymer at least comprising repeating units represented by the following general formulae (1) and (2), and the polymer having a mass average molecular weight of 1,000 to 500,000. There can be provided a polymer, and a resist composition, in particular, a chemically amplified positive resist composition that exhibit higher resolution than conventional positive resist compositions, good in-plane dimension uniformity of developed resist patterns on substrates such as mask blanks and high etching resistance.

摘要翻译： 公开了至少包含由以下通式（1）和（2）表示的重复单元，聚合物的质均分子量为1,000至500,000的聚合物。 可以提供聚合物和抗蚀剂组合物，特别是具有比常规正性抗蚀剂组合物更高分辨率的化学放大正性抗蚀剂组合物，在诸如掩模毛坯和高蚀刻的基底上显影的抗蚀剂图案的良好的面内尺寸均匀性 抵抗性。

公开(公告)号：US06746817B2

公开(公告)日：2004-06-08

申请号：US09984726

申请日：2001-10-31

申请人： Takanobu Takeda ,  Jun Hatakeyama ,  Osamu Watanabe ,  Hiroshi Kubota

发明人： Takanobu Takeda ,  Jun Hatakeyama ,  Osamu Watanabe ,  Hiroshi Kubota

IPC分类号： G03C173

CPC分类号： C08K5/13 ,  C08F232/08 ,  C08K5/36 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/115

摘要： A polymer comprises recurring units of formula (1) and recurring units having acid labile groups which units increase alkali solubility as a result of the acid labile groups being decomposed under the action of acid, and has a Mw of 1,000-500,000. R1 and R2 each are hydrogen, hydroxyl, hydroxyalkyl, alkyl, alkoxy or halogen, and n is 0, 1, 2, 3 or 4. The polymer is useful as a base resin to form a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, and high etching resistance and is best suited as a micropatterning material for use in VLSI manufacture.

摘要翻译： 聚合物包含式（1）的重复单元和具有酸不稳定基团的重复单元，该单元由于酸不稳定基团在酸的作用下分解而增加碱溶解度，并且具有1,000-500,000的Mw .R <1 >和R 2各自为氢，羟基，羟基烷基，烷基，烷氧基或卤素，n为0,1,2,3或4.该聚合物可用作基础树脂以形成化学增强正性抗蚀剂组合物 其具有显着增强曝光前后碱溶解速度对比度，高灵敏度，高分辨率和高耐腐蚀性的优点，并且最适用于用于VLSI制造的微图案材料。

公开(公告)号：US09075306B2

公开(公告)日：2015-07-07

申请号：US13074680

申请日：2011-03-29

申请人： Takanobu Takeda ,  Tamotsu Watanabe ,  Ryuji Koitabashi ,  Keiichi Masunaga ,  Akinobu Tanaka ,  Osamu Watanabe

发明人： Takanobu Takeda ,  Tamotsu Watanabe ,  Ryuji Koitabashi ,  Keiichi Masunaga ,  Akinobu Tanaka ,  Osamu Watanabe

IPC分类号： G03F7/038 ,  G03F7/20

CPC分类号： G03F7/0382 ,  G03F7/20

摘要： A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.

摘要翻译： 化学放大型负性抗蚀剂组合物包含含有重复的羟基苯乙烯单元的聚合物和在其上取代吸电子基团的重复苯乙烯单元。 在形成具有小于0.1μm的细小特征尺寸的图案时，组合物表现出高分辨率，因为由组合物形成的抗蚀剂涂层可以加工成这样的精细尺寸图案，同时使图案特征之间的桥形成最小化。

公开(公告)号：US08367295B2

公开(公告)日：2013-02-05

申请号：US12110651

申请日：2008-04-28

申请人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

发明人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

IPC分类号： G03F7/004

CPC分类号： G03F7/0048 ,  G03F7/0382 ,  G03F7/0397

摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.

摘要翻译： 提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。 本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于 将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。

公开(公告)号：US20080274422A1

公开(公告)日：2008-11-06

申请号：US12110651

申请日：2008-04-28

申请人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

发明人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

IPC分类号： G03F7/004

CPC分类号： G03F7/0048 ,  G03F7/0382 ,  G03F7/0397

摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.

摘要翻译： 提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。 本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于 将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。