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    Magnetoresistive head and manufacturing method therefor
    2.
    发明授权
    Magnetoresistive head and manufacturing method therefor 失效
    磁阻头及其制造方法

    公开(公告)号：US6088196A

    公开(公告)日：2000-07-11

    申请号：US888524

    申请日：1997-07-07

    申请人： Shigeru Tadokoro ,  Katsuro Watanabe ,  Takao Imagawa ,  Yasunari Tajima

    发明人： Shigeru Tadokoro ,  Katsuro Watanabe ,  Takao Imagawa ,  Yasunari Tajima

    IPC分类号： G11B5/31 ,  G11B5/39

    CPC分类号： G11B5/3932 ,  G11B5/3967

    摘要： A magnetoresistive head comprising a magnetoresistive film having electric resistance varying with a magnetic field, a pair of electrodes for causing a current to flow into the magnetoresistive film, and a soft magnetic film for applying a transverse biasing field to the magnetoresistive film, the soft magnetic film containing at least one material of iron, cobalt, and nickel, and at least one compound of zirconium oxide, aluminum oxide, hafnium oxide, titanium oxide, beryllium oxide, magnesium oxide, a rare earth oxygen compound, zirconium nitride, hafnium nitride, aluminum nitride, titanium nitride, beryllium nitride, magnesium nitride, silicon nitride, and a rare earth nitrogen compound. The electric resistance of the soft magnetic film is raised by adding a compound thereto and current diverted from the magnetoresistive film to the soft magnetic film decreases, so that the reproducing voltage of the magnetoresistive head rises.

    摘要翻译： 磁阻头包括具有随磁场变化的电阻的磁阻膜，用于使电流流入磁阻膜的一对电极和用于向磁阻膜施加横向偏置场的软磁膜，软磁体 含有至少一种铁，钴和镍的材料的膜，以及至少一种氧化锆，氧化铝，氧化铪，氧化钛，氧化铍，氧化镁，稀土氧化合物，氮化锆，氮化铪， 氮化铝，氮化钛，氮化铍，氮化镁，氮化硅和稀土氮化合物。 通过向其中添加化合物来提高软磁膜的电阻​​，并且从磁阻膜向软磁膜转移的电流减小，使得磁阻磁头的再现电压升高。

    Magnetoresistive head and magnetic disk apparatus
    5.
    发明授权
    Magnetoresistive head and magnetic disk apparatus 失效
    磁阻磁头和磁盘装置

    公开(公告)号：US06172859B2

    公开(公告)日：2001-01-09

    申请号：US08683978

    申请日：1996-07-22

    申请人： Katsuro Watanabe ,  Takashi Kawabe ,  Shigeru Tadokoro ,  Hiroshi Kamio ,  Takao Imagawa

    发明人： Katsuro Watanabe ,  Takashi Kawabe ,  Shigeru Tadokoro ,  Hiroshi Kamio ,  Takao Imagawa

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/5526 ,  G11B5/59683 ,  G11B2005/3996

    摘要： A magnetoresistive head in which Barkhausen noise is substantially suppressed and a variation in reproduction is minimized, and a magnetic disk apparatus using the same magnetic head have been provided. The feature of the magnetic head and the magnetic disk apparatus of the invention resides in the provision of the longitudinal bias layer which comprises a hard magnetic thin film formed on an underlayer made of either of a ferromagnetic thin film having a body-centered cubic lattice crystal structure formed of body-centered cells, an amorphous ferromagnetic thin film or antiferromagnetic thin film having a body-centered cubic lattice crystal structure formed of body-centered cells.

    摘要翻译： 巴克豪森噪声基本上被抑制并且再现变化最小化的磁阻头，并且已经提供了使用相同磁头的磁盘装置。 本发明的磁头和磁盘装置的特征在于提供纵向偏置层，其包括形成在由具有体心立方晶格晶体的铁磁性薄膜制成的底层上的硬磁薄膜 以身体为中心的细胞构成的结构，由身体中心细胞形成的体心立方晶格结构的非晶铁磁性薄膜或反铁磁性薄膜。

    Magnetoresistive head
    9.
    发明授权
    Magnetoresistive head 失效
    磁阻头

    公开(公告)号：US5436777A

    公开(公告)日：1995-07-25

    申请号：US941248

    申请日：1992-09-04

    申请人： Susumu Soeya ,  Shigeru Tadokoro ,  Takao Imagawa ,  Eiji Ashida ,  Moriaki Fuyama ,  Shinji Narishige ,  Kouichi Nishioka

    发明人： Susumu Soeya ,  Shigeru Tadokoro ,  Takao Imagawa ,  Eiji Ashida ,  Moriaki Fuyama ,  Shinji Narishige ,  Kouichi Nishioka

    IPC分类号： G11B5/00 ,  G11B5/012 ,  G11B5/31 ,  G11B5/39

    CPC分类号： G11B5/3932 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/398 ,  G11B5/399 ,  G11B2005/0016 ,  G11B5/3113 ,  G11B5/313

    摘要： A magnetoresistive head has a substrate (1) and, on the substrate, a magnetoresistive film (40) for converting a magnetic signal into an electric signal by using magnetoresistance effects and a pair of electrodes (60) for causing a signal detection current to flow through the magnetoresistive film. A pair of first domain wall suppressing layers (30) are arranged at opposite end portions of the magnetoresistive film, respectively, to apply a longitudinal magnetic bias to the magnetoresistive film. A second domain wall suppressing layer (45) is also provided for applying a longitudinal magnetic bias, which is weaker compared with the longitudinal magnetic bias applied by the first domain wall suppressing layers, to the magnetoresistive film (40).

    摘要翻译： 磁阻头具有衬底（1），并且在衬底上具有用于通过使用磁阻效应将磁信号转换为电信号的磁阻膜（40）和用于使信号检测电流流动的一对电极（60） 通过磁阻膜。 一对第一畴壁抑制层（30）分别布置在磁阻膜的相对端部，以将纵向磁偏压施加到磁阻膜。 还提供了第二畴壁抑制层（45），用于施加与由第一畴壁抑制层施加的纵向磁偏压相比较对磁阻膜（40）较弱的纵向磁偏压。

    Magnetic tunnel junction magnetoresistive head
    10.
    发明授权
    Magnetic tunnel junction magnetoresistive head 失效
    磁隧道结磁阻头

    公开(公告)号：US06424508B1

    公开(公告)日：2002-07-23

    申请号：US09383201

    申请日：1999-08-26

    申请人： Shigeru Tadokoro ,  Izuru Ishii

    发明人： Shigeru Tadokoro ,  Izuru Ishii

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967

    摘要： A tunnel junction MR head can be easily manufactured and arranged as follow. A first tunnel junction is formed by a magnetization free layer, a first magnetization pinned layer and a thin insulated layer formed between the both layers. A second tunnel junction is formed by the magnetization free layer, a second magnetization pinned layer and an insulated layer. The first and second tunnel junctions are connected to both ends of the magnetization free layer through the magnetization free layer. A detection current flowing from a first electrode connected to the first tunnel junction is passed to a second electrode through the first tunnel junction, the magnetization free layer and the second tunnel junction.

    摘要翻译： 隧道结MR头可以容易地制造和布置如下。 第一隧道结由无磁化层，第一磁化钉扎层和形成在两层之间的薄绝缘层形成。 第二隧道结由磁化自由层，第二磁化被钉扎层和绝缘层形成。 第一和第二隧道结通过无磁化层连接到无磁化层的两端。 从连接到第一隧道结的第一电极流动的检测电流通过第一隧道结，无磁化层和第二隧道结传递到第二电极。