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    Zirconia vane for rotary compressors
    1.
    发明授权
    Zirconia vane for rotary compressors 失效
    旋转压缩机用氧化锆叶片

    公开(公告)号：US5516269A

    公开(公告)日：1996-05-14

    申请号：US412199

    申请日：1995-03-28

    申请人： Takao Nishioka ,  Akira Yamakawa ,  Matsuo Higuchi ,  Harutoshi Ukegawa

    发明人： Takao Nishioka ,  Akira Yamakawa ,  Matsuo Higuchi ,  Harutoshi Ukegawa

    IPC分类号： F04C18/356 ,  C04B35/48 ,  F01C21/08 ,  F01C21/00

    CPC分类号： F01C21/0809 ,  F04C2210/26 ,  F05C2203/0895

    摘要： A zirconia vane used in a rotary compressor, the zirconia vane being formed of a partially stabilized zirconia sintered body containing 92 through 98 molar percent of ZrO.sub.2 and being stabilized with Y.sub.2 O.sub.3, zirconia crystals constituting the zirconia sintered body having a mean grain diameter of 0.1 to 0.6 .mu.m and a maximum grain diameter of not greater than 2 .mu.m, the zirconia sintered body having a mean three-point flexural strength of not less than 120 kg/mm.sup.2 measured in conformity with JIS R1601, a surface of the zirconia sintered body in contact with a rotor of the rotary compressor having a first surface roughness in a direction of rotations of the rotor, specified by a ten-point mean roughness Rz, of not greater than 1 .mu.m and a second surface roughness in a direction perpendicular to the direction of rotation of the rotor, specified by the ten-point mean roughness Rz, of not greater than 0.6 .mu.m. The vane is light-weight and has excellent sliding properties to effectively prevent cohesion and seizure in an atmosphere of a coolant of chlorine-free like an HFC.

    摘要翻译： 用于旋转压缩机的氧化锆叶片，氧化锆叶片由部分稳定的氧化锆烧结体形成，该氧化锆烧结体含有92至98摩尔％的ZrO 2，并且用Y 2 O 3，构成氧化锆烧结体的氧化锆晶体稳定，其平均粒径为0.1至 0.6μm，最大粒径不大于2μm，氧化锆烧结体的平均三点弯曲强度不小于120kg / mm2，符合JIS R1601，氧化锆烧结体的表面 与旋转式压缩机的转子接触，该旋转压缩机的旋转压缩机的转子方向的第一表面粗糙度由十点平均粗糙度Rz指定为不大于1μm，第二表面粗糙度在垂直于 由十点平均粗糙度Rz表示的转子的旋转方向不大于0.6μm。 叶片重量轻，具有优异的滑动性能，有效地防止了像无卤素这样的无氯冷却剂的气氛中的内聚力和卡滞。

    Sintered silicon nitride-based body and process for producing the same
    2.
    发明授权
    Sintered silicon nitride-based body and process for producing the same 失效
    烧结氮化硅基体及其制造方法

    公开(公告)号：US5738820A

    公开(公告)日：1998-04-14

    申请号：US723930

    申请日：1996-10-01

    申请人： Harutoshi Ukegawa ,  Matsuo Higuchi

    发明人： Harutoshi Ukegawa ,  Matsuo Higuchi

    IPC分类号： C04B35/584 ,  C04B35/593 ,  C04B35/597 ,  C04B35/599 ,  C04B41/00 ,  C04B35/587

    CPC分类号： C04B41/009 ,  C04B35/5935 ,  C04B35/597 ,  C04B41/0072

    摘要： A sintered silicon nitride-based body comprising 20% or less by weight of a grain boundary phase and the balance being a major phase of grains of silicon nitride and/or sialon, wherein the major phase contains a grain phase of a .beta.-Si.sub.3 N.sub.4 phase and/or a .beta.'-sialon phase, and a quantitative ratio of the grain phase of the .beta.-Si.sub.3 N.sub.4 phase and/or the .beta.'-sialon phase is in a range of 0.5 to 1.0 relative to the major phase; the grain boundary phase contains Re.sub.2 Si.sub.2 O.sub.7 (wherein Re represents a rare-earth element other than Er and Yb) as a first crystal component and at least one of ReSiNO.sub.2, Re.sub.3 Al.sub.5 O.sub.12, ReAlO.sub.3, and Si.sub.3 N.sub.4.Y.sub.2 O.sub.3 as a second crystal component; and a quantitative ratio of the first and second crystal components in the grain boundary phase to the grain phase of .beta.-Si.sub.3 N.sub.4 phase and/or the .beta.'-sialon phase ranges from 0.03 to 1.6. The sintered body is produced by mixing a specific sintering aid and silicon nitride-based powder, sintering the mixture and heat treating the sintered body for nucleation and crystal growth within the temperature range of from 1050.degree. to 1550.degree. C.

    摘要翻译： 一种烧结氮化硅基体，其包含20重量％或更少的晶界相，余量为氮化硅和/或赛隆的晶粒的主相，其中主相含有β-Si 3 N 4相的晶相 和/或β' - 赛隆相，β-Si 3 N 4相和/或β' - 赛隆相的晶相的定量比例相对于主相为0.5〜1.0的范围。 晶界相包含作为第一结晶成分的Re 2 Si 2 O 7（其中，Re表示除Er和Yb以外的稀土元素）和作为第二结晶成分的ReSiNO 2，Re 3 Al 5 O 12，ReAlO 3和Si 3 N 4 O 2 y 2中的至少一种; 并且晶界相中的第一和第二晶体组分与β-Si 3 N 4相和/或β' - 赛隆相的晶相的定量比为0.03至1.6。 烧结体通过混合特定的烧结助剂和氮化硅基粉末，烧结混合物并在1050℃至1550℃的温度范围内对烧结体进行成核和晶体生长进行热处理。

    Ceramic insert for use with clamp type cutting tool
    3.
    发明授权
    Ceramic insert for use with clamp type cutting tool 失效
    陶瓷刀片用于夹紧式切割工具

    公开(公告)号：US6017172A

    公开(公告)日：2000-01-25

    申请号：US150037

    申请日：1998-09-09

    申请人： Harutoshi Ukegawa ,  Matsuo Higuchi ,  Shingo Hirota ,  Nobuyuki Kitagawa

    发明人： Harutoshi Ukegawa ,  Matsuo Higuchi ,  Shingo Hirota ,  Nobuyuki Kitagawa

    IPC分类号： B23B27/16 ,  C04B35/593 ,  B23B27/22

    CPC分类号： C04B35/5935 ,  B23B27/1651 ,  B23B2200/088 ,  Y10T407/23 ,  Y10T407/26 ,  Y10T407/27

    摘要： The ceramic insert made from a silicon nitride ceramic material and formed with a recess for fastening in the center of its rake face. The recess has a surface roughness Rmax not exceeding 4 .mu.m. The angle between a side face of the recess and a centerline perpendicular to the rake face of the insert is 50-70 degrees. The ratio of the diameter of the recess to the diameter of a circle inscribing the perimeter of the rake face is 30-85%. The recess has a flat or curved bottom. The connecting portion between the side face and the bottom of the recess forms a smoothly curved surface.

    摘要翻译： 陶瓷插件由氮化硅陶瓷材料制成，并形成有用于紧固在其前刀面中心的凹槽。 凹部的表面粗糙度Rmax不超过4μm。 凹部的侧面与垂直于刀片的前刀面的中心线之间的角度为50-70度。 凹槽的直径与刻边面周长的圆的直径的比例为30-85％。 凹槽具有平坦或弯曲的底部。 凹槽的侧面和底部之间的连接部分形成平滑的曲面。

    Sintered silicon nitride-based body
    4.
    发明授权
    Sintered silicon nitride-based body 失效
    烧结氮化硅基体

    公开(公告)号：US5631200A

    公开(公告)日：1997-05-20

    申请号：US597705

    申请日：1996-02-07

    申请人： Harutoshi Ukegawa ,  Matsuo Higuchi

    发明人： Harutoshi Ukegawa ,  Matsuo Higuchi

    IPC分类号： C04B35/584 ,  C04B35/593 ,  C04B35/597 ,  C04B35/599 ,  C04B41/00 ,  C04B35/587

    CPC分类号： C04B41/009 ,  C04B35/5935 ,  C04B35/597 ,  C04B41/0072

    摘要： A sintered silicon nitride-based body comprising 20% or less by weight of a grain boundary phase and the balance being a major phase of grains of silicon nitride and/or sialon, wherein the major phase contains a grain phase of a .beta.-Si.sub.3 N.sub.4 phase and/or a .beta.'-sialon phase, and a quantitative ratio of the grain phase of the .beta.-Si.sub.3 N.sub.4 phase and/or the .beta.'-sialon phase is in a range of 0.5 to 1.0 relative to the major phase; the grain boundary phase contains Re.sub.2 Si.sub.2 O.sub.7 (wherein Re represents a rare-earth element other than Er and Yb) as a first crystal component and at least one of ReSiNO.sub.2, Re.sub.3 Al.sub.5 O.sub.12, ReAlO.sub.3, and Si.sub.3 N.sub.4.Y.sub.2 O.sub.3 as a second crystal component; and a quantitative ratio of the first and second crystal components in the grain boundary phase to the grain phase of .beta.-Si.sub.3 N.sub.4 phase and/or the .beta.'-sialon phase ranges from 0.03 to 1.6. The sintered body is produced by mixing a specific sintering aid and silicon nitride-based powder, sintering the mixture and heat treating the sintered body for nucleation and crystal growth within the temperature range of from 1050.degree. to 1550.degree. C.

    摘要翻译： 一种烧结氮化硅基体，其包含20重量％或更少的晶界相，余量为氮化硅和/或赛隆的晶粒的主相，其中主相含有β-Si 3 N 4相的晶相 和/或β' - 赛隆相，β-Si 3 N 4相和/或β' - 赛隆相的晶相的定量比例相对于主相为0.5〜1.0的范围。 晶界相包含作为第一结晶成分的Re 2 Si 2 O 7（其中，Re表示除Er和Yb以外的稀土元素）和作为第二结晶成分的ReSiNO 2，Re 3 Al 5 O 12，ReAlO 3和Si 3 N 4 O 2 y 2中的至少一种; 并且晶界相中的第一和第二晶体组分与β-Si 3 N 4相和/或β' - 赛隆相的晶相的定量比为0.03至1.6。 烧结体通过混合特定的烧结助剂和氮化硅基粉末，烧结混合物并在1050℃至1550℃的温度范围内对烧结体进行成核和晶体生长进行热处理。

    Mounting structure for semiconductor device having low thermal resistance
    8.
    发明授权
    Mounting structure for semiconductor device having low thermal resistance 失效
    具有低热阻的半导体器件的安装结构

    公开(公告)号：US5602720A

    公开(公告)日：1997-02-11

    申请号：US264329

    申请日：1994-06-23

    申请人： Masuhiro Natsuhara ,  Harutoshi Ukegawa

    发明人： Masuhiro Natsuhara ,  Harutoshi Ukegawa

    IPC分类号： H01L23/373 ,  H05K7/20

    CPC分类号： H01L23/3735 ,  H01L2924/0002

    摘要： A structure for mounting a semiconductor device includes a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK on one surface of which the semiconductor device is mounted, a heat sink joined to another surface of the ceramic plate formed of a copper or copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK, and a base member formed of a metal or an alloy having a thermal conductivity equal to or higher than 100 W/mK on which the heat sink is mounted.

    摘要翻译： 用于安装半导体器件的结构包括在其一个表面上安装有半导体器件的热导率等于或高于120W / mK的陶瓷板，连接到由铜形成的陶瓷板的另一个表面的散热器 或具有等于或高于300W / mK的热导率的铜基合金板，以及由热导率等于或高于其上安装散热片的100W / mK的金属或合金形成的基底部件 。