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    Sintered aluminum nitride body and metallized substrate prepared therefrom
    4.
    发明授权
    Sintered aluminum nitride body and metallized substrate prepared therefrom 有权
    烧结氮化铝体和由其制备的金属化基材

    公开(公告)号：US06174614B1

    公开(公告)日：2001-01-16

    申请号：US09178771

    申请日：1998-10-26

    申请人： Yasuhisa Yushio ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Motoyuki Tanaka

    发明人： Yasuhisa Yushio ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Motoyuki Tanaka

    IPC分类号： B32B1800

    CPC分类号： C04B41/009 ,  C04B35/581 ,  C04B41/5116 ,  C04B41/5133 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C04B41/5027 ,  C04B41/5074 ,  C04B41/5049 ,  C04B41/5006 ,  C04B41/5072 ,  C04B41/5122 ,  C04B41/522 ,  C04B41/5022

    摘要： A sintered aluminum nitride body comprising aluminum nitride as the main component and containing a calcium compound, an ytterbium compound, and a neodymium compound. Due to the use of the above calcium-yttrium-neodymium ternary sintering aid, the sintered aluminum nitride body can be obtained by firing a compact of the raw material powder at a low temperature after degreasing the compact without cracking and has evenness of in color, strength and thermal conductivity. The sintered aluminum nitride body provides an inexpensive, high-quality metallized substrate for electronic parts by forming a high-melting metallizing layer of W and/or Mo. Onto the aluminum nitride body, an Ag metallizing layer including oxides of Zn and Cu or an Ag-Pd metallilzing layer including oxides of B, Pb, Cr and Ca and, if necessary, further an insulating vitreous layer may be formed.

    摘要翻译： 一种包含氮化铝作为主要成分并含有钙化合物，镱化合物和钕化合物的烧结氮化铝体。 由于使用了上述的钙 - 钇 - 钕三元烧结助剂，所以可以通过在低密度烧结原料粉末的压实体而不产生裂纹的同时，在低温下烧结原料粉末的粉末，并且具有均匀的颜色， 强度和导热性。 烧结的氮化铝体通过形成W和/或Mo的高熔点金属化层，为电子部件提供廉价的高品质金属化基板。在氮化铝体上，包含Zn和Cu的氧化物的Ag金属化层或 可以形成包含B，Pb，Cr和Ca的氧化物的Ag-Pd金属化层，并且如果需要，还可以形成绝缘玻璃质层。

    Aluminum nitride sintered body and method of preparing the same
    5.
    发明授权
    Aluminum nitride sintered body and method of preparing the same 有权
    氮化铝烧结体及其制备方法

    公开(公告)号：US06271163B1

    公开(公告)日：2001-08-07

    申请号：US09357600

    申请日：1999-07-20

    申请人： Yasuhisa Yushio ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Motoyuki Tanaka ,  Yasuhiro Murase

    发明人： Yasuhisa Yushio ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Motoyuki Tanaka ,  Yasuhiro Murase

    IPC分类号： C04B35581

    CPC分类号： C04B35/581 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An aluminum nitride sintered body has excellent thermal shock resistance and strength, and is applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. The aluminum nitride sintered body contains 0.01 to 5 percent by weight of an alkaline earth metal element compound in terms of an oxide and 0.01 to 10 percent by weight of a rare earth element compound in terms of an oxide, respectively as sintering aids, and a residual amount of carbon in a range from 0.005 to 0.1 percent by weight, thereby suppressing grain growth and improving thermal shock resistance and strength of the sintered body.

    摘要翻译： 氮化铝烧结体具有优异的耐热冲击性和强度，并且适用于在严格的热循环下使用的用于功率模块的辐射基板或用于半导体设备的夹具。 氮化铝烧结体分别含有0.01〜5重量％的碱土类金属元素化合物，以氧化物计，0.01〜10重量％的稀土元素化合物，以氧化物计，作为烧结助剂， 残留量在0.005〜0.1重量％的范围内，从而抑制晶粒生长，提高耐热冲击性和烧结体的强度。

    Aluminum nitride sintered body and method of preparing the same
    6.
    发明授权
    Aluminum nitride sintered body and method of preparing the same 有权
    氮化铝烧结体及其制备方法

    公开(公告)号：US06428741B2

    公开(公告)日：2002-08-06

    申请号：US09783259

    申请日：2001-02-13

    申请人： Yasuhisa Yushio ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Motoyuki Tanaka ,  Yasuhiro Murase

    发明人： Yasuhisa Yushio ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Motoyuki Tanaka ,  Yasuhiro Murase

    IPC分类号： C04B35581

    CPC分类号： C04B35/581 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is an aluminum nitride sintered body excellent in thermal shock resistance and strength and applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. An aluminum nitride sintered body obtained with a sintering aid of a rare earth element and an alkaline earth metal element contains 0.01 to 5 percent by weight of an alkaline earth metal element compound in terms of an oxide and 0.01 to 10 percent by weight of a rare earth element compound in terms of an oxide, and the amount of carbon remaining in the sintered body is controlled to 0.005 to 0.1 percent by weight, thereby suppressing grain growth and improving thermal shock resistance and strength of the sintered body.

    摘要翻译： 提供耐热冲击性和强度优异的氮化铝烧结体，适用于在严格的热循环下使用的功率模块用的放射性基板或半导体装置的夹具。 用稀土元素和碱土金属元素的烧结助剂获得的氮化铝烧结体含有0.01〜5重量％的碱土类金属元素化合物，以氧化物计，0.01〜10重量％的稀有金属元素 以氧化物换算的土元素化合物，将烧结体中剩余的碳量控制在0.005〜0.1重量％，抑制晶粒生长，提高耐烧结体的耐热冲击性和强度。

    Mounting structure for semiconductor device having low thermal resistance
    8.
    发明授权
    Mounting structure for semiconductor device having low thermal resistance 失效
    具有低热阻的半导体器件的安装结构

    公开(公告)号：US5602720A

    公开(公告)日：1997-02-11

    申请号：US264329

    申请日：1994-06-23

    申请人： Masuhiro Natsuhara ,  Harutoshi Ukegawa

    发明人： Masuhiro Natsuhara ,  Harutoshi Ukegawa

    IPC分类号： H01L23/373 ,  H05K7/20

    CPC分类号： H01L23/3735 ,  H01L2924/0002

    摘要： A structure for mounting a semiconductor device includes a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK on one surface of which the semiconductor device is mounted, a heat sink joined to another surface of the ceramic plate formed of a copper or copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK, and a base member formed of a metal or an alloy having a thermal conductivity equal to or higher than 100 W/mK on which the heat sink is mounted.

    摘要翻译： 用于安装半导体器件的结构包括在其一个表面上安装有半导体器件的热导率等于或高于120W / mK的陶瓷板，连接到由铜形成的陶瓷板的另一个表面的散热器 或具有等于或高于300W / mK的热导率的铜基合金板，以及由热导率等于或高于其上安装散热片的100W / mK的金属或合金形成的基底部件 。

    Substrate processing apparatus
    9.
    发明授权
    Substrate processing apparatus 失效
    基板加工装置

    公开(公告)号：US07361230B2

    公开(公告)日：2008-04-22

    申请号：US10119955

    申请日：2002-04-09

    申请人： Masuhiro Natsuhara ,  Hirohiko Nakata ,  Akira Kuibira ,  Kenji Shinma

    发明人： Masuhiro Natsuhara ,  Hirohiko Nakata ,  Akira Kuibira ,  Kenji Shinma

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： H01L21/67103 ,  C23C16/4581 ,  C23C16/4586 ,  H01L21/68714 ,  Y10T279/23

    摘要： In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrate is in contact with a chamber, it is supported by the chamber. Thus, a substrate processing apparatus can be provided which improves thermal uniformity, reduces cost, is suitable for size reduction of the apparatus and which can ease restrictions in mounting a power supply conductive member or the like.

    摘要翻译： 在基板处理装置中，用于安装基板的陶瓷模块具有具有电路和陶瓷基体的平板部分，并且作为安装基板的表面以外的平板部分的至少一部分表面， 与腔室接触，它由腔室支撑。 因此，可以提供提高热均匀性，降低成本的衬底处理装置，适合于装置的尺寸减小，并且可以减轻安装电源导电构件等的限制。

    Wafer holder and semiconductor manufacturing apparatus
    10.
    发明授权
    Wafer holder and semiconductor manufacturing apparatus 有权
    晶圆支架和半导体制造装置

    公开(公告)号：US07268321B2

    公开(公告)日：2007-09-11

    申请号：US10498460

    申请日：2003-03-19

    申请人： Masuhiro Natsuhara ,  Hirohiko Nakata ,  Akira Kuibira ,  Manabu Hashikura

    发明人： Masuhiro Natsuhara ,  Hirohiko Nakata ,  Akira Kuibira ,  Manabu Hashikura

    IPC分类号： H05B3/68 ,  C23C16/00

    CPC分类号： H01L21/68757 ,  H01L21/67103 ,  H01L21/67248

    摘要： A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing larger-diameter wafers is made available. In a wafer holder (1) including within a ceramic substrate (2) a resistive heating element (3) or the like and being furnished with a lead (4) penetrating a reaction chamber (6), the lead (4) is housed in a tubular guide member (5), and an interval between the guide member (5) and the reaction chamber (6) as well as the interior of the guide member (5) are hermetically sealed. The guide member (5) and the ceramic substrate (2) are not joined together, and in the interior of the guide member (5) in which the inside is hermetically sealed, the atmosphere toward the ceramic substrate (2) is preferably substantially the same as the atmosphere in the reaction chamber (6).

    摘要翻译： 提供了一种晶片保持器，其中支撑和加热晶片中的局部热辐射保持在控制之下，并且晶片保持表面的温度均匀性得到增强，并且通过利用晶片保持器，适于处理较大直径晶片的半导体制造装置为 提供。 在陶瓷基板（2）内具有电阻加热元件（3）等并配有穿过反应室（6）的引线（4）的晶片保持器（1）中，引线（4）容纳在 管状引导构件（5）以及引导构件（5）和反应室（6）之间的间隔以及引导构件（5）的内部被气密地密封。 引导构件（5）和陶瓷基板（2）不接合在一起，并且在内部被密封的引导构件（5）的内部，朝向陶瓷基板（2）的气氛优选为 与反应室（6）中的气氛相同。