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71 条记录 (耗时 0.03 秒)

    Light quantity control device
    1.
    发明授权
    Light quantity control device 失效
    光量控制装置

    公开(公告)号：US4417179A

    公开(公告)日：1983-11-22

    申请号：US376030

    申请日：1982-05-07

    申请人： Takashi Fujimura ,  Kazuo Kato

    发明人： Takashi Fujimura ,  Kazuo Kato

    IPC分类号： G03B27/34 ,  G03B27/54 ,  G03B27/72 ,  H05B41/392 ,  H05B37/02

    CPC分类号： H05B41/3922

    摘要： A light quantity control device for controlling the quantity of light emitted from a light source supplied with a.c. power through a bidirectional switching element is disclosed which comprises an integrating circuit for integrating an electric signal corresponding to the quantity of emitted light to produce a light quantity signal varying in accordance with a change in quantity of emitted light and another integrating circuit for integrating the light quantity signal with a predetermined period to produce an exponentially rising signal for every predetermined period, and in which the output of the latter integrating circuit is compared with a reference value to obtain a control signal having a duration time corresponding to the results of comparison, and the switching element is controlled by the control signal to perform a phase control for the a.c. power.

    摘要翻译： 一种光量控制装置，用于控制从光源提供的光的发射量。 公开了一种通过双向开关元件的电力，其包括用于对与发射光量对应的电信号进行积分的积分电路，以产生根据发射光量的变化而变化的光量信号，以及用于积分光的另一积分电路 数量信号以预定周期产生每个预定周期的指数上升信号，并且将后一积分电路的输出与参考值进行比较，以获得具有与比较结果相对应的持续时间的控制信号，以及 开关元件由控制信号控制，以执行ac的相位控制 功率。

    Motor driving apparatus and motor apparatus using the same
    2.
    发明授权
    Motor driving apparatus and motor apparatus using the same 有权
    电动机驱动装置及使用其的电动机装置

    公开(公告)号：US09035582B2

    公开(公告)日：2015-05-19

    申请号：US13440154

    申请日：2012-04-05

    申请人： Tetsuo Yamato ,  Takashi Fujimura

    发明人： Tetsuo Yamato ,  Takashi Fujimura

    IPC分类号： H02P6/16 ,  H02P6/10 ,  H02P6/08 ,  B62D5/04 ,  H02P3/14 ,  D06F33/02

    CPC分类号： H02P6/08 ,  H02P6/10 ,  H02P6/16

    摘要： A motor driving apparatus includes an automatic gain control circuit on a signal path for transmitting a rotor-position detecting signal (hall voltage signal), and the automatic gain control circuit includes: an amplifier, configured to perform differential amplification on an input signal (step-angle hall current signal) to generate an output signal (amplified hall current signal); and a feedback control portion, configured to monitor the output signal (monitored current signal) to decide a gain of the amplifier.

    摘要翻译： 电动机驱动装置包括用于传递转子位置检测信号（门厅电压信号）的信号路径上的自动增益控制电路，自动增益控制电路包括：放大器，被配置为对输入信号进行差分放大（步骤 - 霍尔电流信号）产生输出信号（放大霍尔电流信号）; 以及反馈控制部分，被配置为监视输出信号（监视的电流信号）以决定放大器的增益。

    Fundus analyzing appartus and fundus analyzing method
    3.
    发明授权
    Fundus analyzing appartus and fundus analyzing method 有权
    眼底分析和眼底分析方法

    公开(公告)号：US08684528B2

    公开(公告)日：2014-04-01

    申请号：US13387497

    申请日：2010-07-14

    申请人： Takashi Fujimura ,  Hiroyuki Aoki

    发明人： Takashi Fujimura ,  Hiroyuki Aoki

    IPC分类号： A61B3/12 ,  A61B3/10

    CPC分类号： A61B3/12 ,  A61B3/1005 ,  A61B3/102 ,  G06T7/0012 ,  G06T2200/24 ,  G06T2207/10101 ,  G06T2207/30041

    摘要： A fundus analyzing apparatus 1 performs OCT measurements of a fundus Ef and generates multiple tomographic images that each depict layer structures of the fundus Ef. Each formed tomographic image is stored in a storage 212. Based on the pixel values of the pixels of each tomographic image, the layer-region identifying part 233 identifies the layer region corresponding to the pigment layer of the retina. Based on the shape of the layer region, the curve calculator 234 obtains a convex standard curve in the direction of depth of the fundus Ef. Based on the layer region and the standard curve, a protrusion-region identifying part 235 identifies protrusion regions where the layer region protrudes in the opposite direction from the direction of depth of the fundus Ef. A morphological-information generating part 236 generates morphological information representing the morphology (number, size, distribution, etc.) of the protrusion regions.

    摘要翻译： 眼底分析装置1执行眼底Ef的OCT测量，并生成各自描绘眼底Ef的层结构的多个断层图像。 每个形成的断层图像被存储在存储器212中。基于每个断层图像的像素的像素值，层区域识别部分233识别对应于视网膜的颜料层的层区域。 基于层区域的形状，曲线计算器234获得在眼底Ef的深度方向上的凸标准曲线。 基于层区域和标准曲线，突起区域识别部件235识别突起区域，其中层区域沿与眼底Ef的深度方向相反的方向突出。 形态信息生成部236生成表示突起区域的形态（数量，大小，分布等）的形态信息。

    Method of manufacturing semiconductor device
    6.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07709295B2

    公开(公告)日：2010-05-04

    申请号：US11699793

    申请日：2007-01-30

    申请人： Takashi Fujimura

    发明人： Takashi Fujimura

    IPC分类号： H01L21/00

    CPC分类号： H01L21/304 ,  H01L21/6835 ,  H01L23/3157 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a method of manufacturing a semiconductor device, a passivation film made of a polyimide resin film is formed on a front surface of a semiconductor wafer including a scribe line and an outer circumferential portion. Thereafter, only the passivation film which is formed on the scribe line of the semiconductor wafer and on the outer circumferential portion of the semiconductor wafer is selectively removed. A protective tape is then bonded onto the front surface of the semiconductor wafer, followed by grinding of a rear surface of the semiconductor wafer.

    摘要翻译： 在制造半导体器件的方法中，在包括划痕线和外周部分的半导体晶片的前表面上形成由聚酰亚胺树脂膜制成的钝化膜。 此后，仅选择形成在半导体晶片的划线上和半导体晶片的外圆周部分上的钝化膜。 然后将保护带粘合到半导体晶片的前表面上，然后研磨半导体晶片的后表面。

    Method of manufacturing semiconductor device
    8.
    发明申请
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20070184660A1

    公开(公告)日：2007-08-09

    申请号：US11699793

    申请日：2007-01-30

    申请人： Takashi Fujimura

    发明人： Takashi Fujimura

    IPC分类号： H01L21/302 ,  H01L21/31

    CPC分类号： H01L21/304 ,  H01L21/6835 ,  H01L23/3157 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a method of manufacturing a semiconductor device in which, when a polyimide resin film is formed as a protective film on a front surface of a semiconductor chip, the polyimide resin film disposed on scribe lines is removed and the polyimide resin film disposed on a circumferential portion of the semiconductor wafer is also removed. Thus, when a rear surface of the semiconductor wafer is ground, the outer circumferential portion of the semiconductor wafer and the surface protective tape can be completely bonded to each other, thereby making it possible to fill a gap between the surface protective tape and each scribe line formed on the front surface of the semiconductor wafer, prevent grinding wafer from penetrating into the gap when the rear surface of the semiconductor wafer is ground, and prevent the scribe lines and the front surface of the semiconductor chip from being contaminated with grinding swarf.

    摘要翻译： 提供一种制造半导体器件的方法，其中当在半导体芯片的前表面上形成作为保护膜的聚酰亚胺树脂膜时，去除设置在划痕线上的聚酰亚胺树脂膜，并且将聚酰亚胺树脂膜设置在 半导体晶片的圆周部分也被去除。 因此，当半导体晶片的后表面被研磨时，半导体晶片的外圆周部分和表面保护带可以彼此完全接合，从而可以填充表面保护带和每个划片之间的间隙 形成在半导体晶片的前表面上的线，当半导体晶片的后表面被研磨时，防止研磨晶片渗透到间隙中，并且防止划线和半导体芯片的前表面被研磨切屑污染。

    Method of forming polycrystalline semiconductor film
    9.
    发明授权
    Method of forming polycrystalline semiconductor film 有权
    形成多晶半导体膜的方法

    公开(公告)号：US06486046B2

    公开(公告)日：2002-11-26

    申请号：US09954152

    申请日：2001-09-18

    申请人： Takashi Fujimura ,  Shinichi Kawamura

    发明人： Takashi Fujimura ,  Shinichi Kawamura

    IPC分类号： H01L2120

    CPC分类号： H01L21/02595 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

    摘要： It is possible to prevent lowering in productivity of thin-film transistors with no decrease in performance of the transistors. Provided are depositing an amorphous semiconductor film on a substrate, a first irradiating the amorphous semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as a major component with a specific amount of oxygen, to change the amorphous semiconductor film into a polycrystalline semiconductor film, and a second irradiating the polycrystalline semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as major component with oxygen of an amount less than the specific amount.

    摘要翻译： 不会降低晶体管的性能，可以防止薄膜晶体管的生产率降低。 提供在基板上沉积非晶半导体膜，首先在含有惰性气体的气体作为主要成分的气体的气氛中用特定量的氧照射具有能量的光束的非晶半导体膜，以改变非晶半导体 薄膜形成多晶半导体薄膜，第二次在具有小于特定量的氧气的惰性气体作为主要成分的气体的气氛中，以能量丰富的光束照射多晶半导体薄膜。