利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.023 秒)

    MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    1.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
    半导体集成电路器件的制造方法

    公开(公告)号：US20110127158A1

    公开(公告)日：2011-06-02

    申请号：US12940159

    申请日：2010-11-05

    申请人： Takashi HAMAYA ,  Hidenori SUZUKI ,  Yuichi HARANO ,  Masahiko ITO

    发明人： Takashi HAMAYA ,  Hidenori SUZUKI ,  Yuichi HARANO ,  Masahiko ITO

    IPC分类号： C23C14/34

    CPC分类号： H01L21/2855 ,  C23C14/564 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

    摘要： In a copper damascene wiring process, a tantalum-based laminated film, which is used as a barrier metal film, is continuously formed in a sputtering deposition chamber. When the continuous deposition process is discontinuously applied to a number of wafers, a tantalum film and a tantalum nitride film which are relatively thin are alternately deposited over an inner surface of a shield in a sputter deposition chamber, which results in a thickness of the deposited film being on the order of several thousand nanometers. The deposited film peels off due to internal stress therein to generate foreign material or particles. To counteract this, a tantalum film, which is much thicker than the tantalum film formed over the wafer at one time, is formed over the substantially inner wall of the chamber at predetermined intervals when repeatedly depositing the tantalum nitride film and the tantalum film in the sputtering deposition chamber.

    摘要翻译： 在铜镶嵌布线方法中，在溅射沉积室中连续地形成用作阻挡金属膜的钽基层压膜。 当连续沉积过程不连续地施加到多个晶片时，相对薄的钽膜和氮化钽膜交替沉积在溅射沉积室中的屏蔽的内表面上，这导致沉积的厚度 大约数千纳米的电影。 沉积膜由于其中的内部应力而剥离以产生异物或颗粒。 为了抵消这种情况，当以一定间隔形成厚度大于在晶片上形成的钽膜的钽膜时，在反复沉积氮化钽膜和钽膜时，以预定间隔形成在腔的基本内壁上 溅射沉积室。

    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20100055879A1

    公开(公告)日：2010-03-04

    申请号：US12480077

    申请日：2009-06-08

    申请人： Yuichi HARANO ,  Hidenori SUZUKI

    发明人： Yuichi HARANO ,  Hidenori SUZUKI

    IPC分类号： H01L21/326

    CPC分类号： H01L21/6831

    摘要： A wafer is mounted on the top surface of the stage having an electrostatic chuck function, and the wafer at 50° C. or more is cooled to a temperature lower than 50° C. In this step, the voltage to be applied to the internal electrode provided in the stage is raised stepwise to gradually increase the contact area between the back surface of the wafer and the top surface of the stage. Finally, a chuck voltage is applied to the internal electrode, so that the entire back surface of the wafer is uniformly attracted to the top surface of the stage. This reduces damage occurring in the top surface of the stage due to rubbing between the back surface of the wafer and the top surface of the stage.

    摘要翻译： 将晶片安装在具有静电卡盘功能的平台的顶表面上，并且将在50℃或更高的晶片冷却至低于50℃的温度。在该步骤中，施加到内部的电压 设置在台架中的电极逐步升高以逐渐增加晶片的背表面和台的顶表面之间的接触面积。 最后，向内部电极施加卡盘电压，使得晶片的整个背面被均匀地吸引到台的顶面。 这减少了由于在晶片的后表面和台的顶表面之间的摩擦而在台的顶表面中发生的损坏。

    STORAGE APPARATUS AND VOLUME RESTORATION METHOD
    4.
    发明申请
    STORAGE APPARATUS AND VOLUME RESTORATION METHOD 有权
    存储装置和容量恢复方法

    公开(公告)号：US20090254721A1

    公开(公告)日：2009-10-08

    申请号：US11968277

    申请日：2008-01-02

    申请人： Hidenori SUZUKI ,  Shunji KAWAMURA

    发明人： Hidenori SUZUKI ,  Shunji KAWAMURA

    IPC分类号： G06F12/16 ,  G06F12/00

    CPC分类号： G06F11/1469 ,  G06F11/1471 ,  G06F11/1666 ,  G06F11/201 ,  G06F11/2089 ,  G06F2201/84

    摘要： A storage apparatus conducts, in a protection period, data protection processing for protecting, in a third logical volume, data stored in a first logical volume by using backup data stored in a second logical volume, and suspends the data protection processing in a no-protection period, during which backup relative to the second logical volume is suspended, in the protection period. Then, upon receiving an external order for restoring the first logical volume to its state as of at a time not in the no-protection period within the protection period, the storage apparatus restores the first logical volume to its state as of at a time of the order by using the data backed up in the second logical volume and the data protected in the third logical volume.

    摘要翻译： 存储装置在保护期间进行数据保护处理，用于通过使用存储在第二逻辑卷中的备份数据在第三逻辑卷中保护存储在第一逻辑卷中的数据，并将数据保护处理暂停在第二逻辑卷中， 保护期间，在保护期间，相对于第二逻辑卷的备份被暂停。 然后，存储装置在接收到用于将第一逻辑卷恢复到其在保护期间内不处于非保护期间的状态的外部命令时，将第一逻辑卷恢复到其当前状态 通过使用在第二逻辑卷中备份的数据和第三逻辑卷中保护的数据的顺序。

    BLOOD VESSEL FUNCTION INSPECTING APPARATUS
    6.
    发明申请
    BLOOD VESSEL FUNCTION INSPECTING APPARATUS 有权
    血管功能检查装置

    公开(公告)号：US20140364729A1

    公开(公告)日：2014-12-11

    申请号：US14467889

    申请日：2014-08-25

    申请人： Hiroshi MASUDA ,  Chikao HARADA ,  Hidenori SUZUKI

    发明人： Hiroshi MASUDA ,  Chikao HARADA ,  Hidenori SUZUKI

    IPC分类号： A61B8/08 ,  A61B8/00 ,  A61B8/06

    CPC分类号： A61B8/485 ,  A61B5/02035 ,  A61B5/02225 ,  A61B5/0225 ,  A61B8/06 ,  A61B8/0858 ,  A61B8/0891 ,  A61B8/4218 ,  A61B8/488 ,  A61B8/5223 ,  G01S15/899

    摘要： It is provided a blood vessel function inspecting apparatus including: a blood vessel diameter measuring portion configured to measure a diameter of a blood vessel; a blood vessel wall thickness measuring portion configured to measure a wall thickness of the blood vessel; and a blood vessel function index value calculating portion configured to calculate a function index value for diagnosing the blood vessel of its function, after releasing of the blood vessel from blood flow obstruction, by dividing an amount of dilatation of said diameter of the blood vessel continuously measured by said blood vessel diameter measuring portion, by the wall thickness measured by said blood vessel wall thickness measuring portion.

    摘要翻译： 本发明提供一种血管功能检查装置，包括：血管直径测量部，被配置为测量血管的直径; 构造成测量血管壁厚的血管壁厚测量部; 以及血管功能指标值计算部，其被配置为通过将所述血管直径的扩张量连续地除以从血流阻塞释放血液之后，计算用于诊断其功能的血管的功能指标值 由所述血管直径测量部分测量由所述血管壁厚度测量部分测量的壁厚。

    FUEL CELL
    7.
    发明申请
    FUEL CELL 有权
    燃料电池

    公开(公告)号：US20120231361A1

    公开(公告)日：2012-09-13

    申请号：US13423893

    申请日：2012-03-19

    申请人： Naoki IWAMURA ,  Hirofumi KAN ,  Daisuke WATANABE ,  Hidenori SUZUKI ,  Shunsuke KIMURA

    发明人： Naoki IWAMURA ,  Hirofumi KAN ,  Daisuke WATANABE ,  Hidenori SUZUKI ,  Shunsuke KIMURA

    IPC分类号： H01M8/04

    CPC分类号： H01M8/04544 ,  H01M8/04201 ,  H01M8/04388 ,  H01M8/04559 ,  H01M8/04626 ,  H01M8/04753 ,  H01M8/1011 ,  Y02E60/50 ,  Y02E60/523

    摘要： A fuel cell has a fuel cell main body, a fuel supply unit, a voltage sensor, a supply speed determining unit, a fuel supply control unit, and a connecting unit. The voltage sensor measures the open-circuit voltage of the fuel cell main body. The supply speed determining unit determines the fuel supply speed of the fuel supply unit, on the basis of the results obtained from the measurement performed by the voltage sensor, in the case where the voltage measured by the voltage sensor is smaller than a predetermined value. The fuel supply control unit controls, on the basis of the supply speed thus determined, the fuel supply from the fuel supply unit. The connecting unit connects a load to the fuel cell main body, in the case where the voltage measured by the voltage sensor is larger than the predetermined value.

    摘要翻译： 燃料电池具有燃料电池主体，燃料供给单元，电压传感器，供给速度确定单元，燃料供给控制单元和连接单元。 电压传感器测量燃料电池主体的开路电压。 在由电压传感器测量的电压小于预定值的情况下，供电速度确定单元基于由电压传感器执行的测量获得的结果来确定燃料供应单元的燃料供应速度。 燃料供给控制单元基于如此确定的供给速度来控制来自燃料供给单元的燃料供给。 在由电压传感器测量的电压大于预定值的情况下，连接单元将负载连接到燃料电池主体。