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    Semiconductor memory
    1.
    发明授权
    Semiconductor memory 失效
    半导体存储器

    公开(公告)号：US5177743A

    公开(公告)日：1993-01-05

    申请号：US767363

    申请日：1991-09-30

    申请人： Takashi Shinoda ,  Osamu Sakai

    发明人： Takashi Shinoda ,  Osamu Sakai

    IPC分类号： G06F11/10 ,  G11C17/12

    CPC分类号： G06F11/1008 ,  G06F11/1076 ,  G11C17/126

    摘要： In a read only semiconductor memory, signal lines such as data lines are subjected to an undesired parasitic capacitance which restricts the signal changing rate along the lines. The parasitic capacitance which is driven by a memory cell will become increasingly higher as the memory capacity is increased. According to the present invention, a differential sense amplifier is used to amplify the data signals which are read out of the memory cell. At the same time, a dummy cell is used to generate a reference potential which is to be referred to by the differential sense amplifier. In particular, a dummy cell arrangement is provided wherein each dummy cell includes at least two series-connected semiconductor elements to provide a predetermined dummy cell conductance to establish a reference value. Another aspect of the invention lies in the use of column switches between a common data line and data lines of the memory arrays for coupling only one data line at a time through the column switch to the sense amplifier. In addition, a built-in error-correcting-code circuit is provided which operates in conjunction with a selecting circuit so that memory cells delivering a predetermined set of data are spaced apart from one another by at least predetermined distances to reduce the likelihood of errors from immediately adjacent memory cells.

    摘要翻译： 在只读半导体存储器中，诸如数据线的信号线受到不期望的寄生电容的限制，沿着线路限制信号变化率。 随着存储器容量的增加，由存储器单元驱动的寄生电容将变得越来越高。 根据本发明，使用差分读出放大器来放大从存储单元读出的数据信号。 同时，使用虚拟单元来产生由差分读出放大器参考的参考电位。 特别地，提供了一种虚设单元布置，其中每个虚拟单元包括至少两个串联连接的半导体元件，以提供预定的虚设单元电导以建立参考值。 本发明的另一方面在于使用公共数据线和存储器阵列的数据线之间的列开关，用于仅通过列开关将一条数据线耦合到读出放大器。 此外，提供内置的纠错码电路，其与选择电路一起操作，使得传递预定数据集的存储器单元彼此间隔至少预定距离以减少错误的可能性 从紧邻的存储单元。

    Semiconductor memory with an improved dummy cell arrangement and with a built-in error correction code circuit
    2.
    发明授权
    Semiconductor memory with an improved dummy cell arrangement and with a built-in error correction code circuit 失效
    具有改进的虚设单元布置并具有内置纠错码电路的半导体存储器

    公开(公告)号：US4943967A

    公开(公告)日：1990-07-24

    申请号：US326653

    申请日：1989-03-21

    申请人： Takashi Shinoda ,  Osamu Sakai

    发明人： Takashi Shinoda ,  Osamu Sakai

    IPC分类号： G06F11/10 ,  G11C17/12

    CPC分类号： G06F11/1008 ,  G06F11/1076 ,  G11C17/126

    摘要： In a read only semiconductor memory, signal lines such as data lines are subjected to an undesired parasitic capacitance which restricts the signal changing rate along the lines. The parasitic capacitance which is driven by a memory cell will become increasingly higher as the memory capacity is increased. According to the present invention, a differential sense amplifier is used to amplify the data signals which are read out of the memory cell. At the same time, a dummy cell is used to generate a reference potential which is to be referred to by the differential sense amplifier. In particular, a dummy cell arrangement is provided wherein each dummy cell includes at least two series-connected semiconductor elements to provide a predetermined dummy cell conductance to establish a reference value. Another aspect of the invention lies in the use of column switches between a common data line and data lines of the memory arrays for coupling only one data line at a time through the column switch to the sense amplifier. In addition, a built-in error-correcting-code circuit is provided which operates in conjunction with a selecting circuit so that memory cells delivering a predetermined set of data are spaced apart from one another by at least predetermined distances to reduce the likelihood of errors from immediately adjacent memory cells.

    摘要翻译： 在只读半导体存储器中，诸如数据线的信号线受到不期望的寄生电容的限制，沿着线路限制信号变化率。 随着存储器容量的增加，由存储器单元驱动的寄生电容将变得越来越高。 根据本发明，使用差分读出放大器来放大从存储单元读出的数据信号。 同时，使用虚拟单元来产生由差分读出放大器参考的参考电位。 特别地，提供了一种虚设单元布置，其中每个虚拟单元包括至少两个串联连接的半导体元件，以提供预定的虚设单元电导以建立参考值。 本发明的另一方面在于使用公共数据线和存储器阵列的数据线之间的列开关，用于仅通过列开关将一条数据线耦合到读出放大器。 此外，提供内置的纠错码电路，其与选择电路一起操作，使得传递预定数据集的存储器单元彼此间隔至少预定距离以减少错误的可能性 从紧邻的存储单元。

    Semiconductor memory with an improved dummy cell arrangement and with a built-in error correcting code circuit
    3.
    发明授权
    Semiconductor memory with an improved dummy cell arrangement and with a built-in error correcting code circuit 失效
    具有改进的虚设单元布置并具有内置纠错码电路的半导体存储器

    公开(公告)号：US4817052A

    公开(公告)日：1989-03-28

    申请号：US37048

    申请日：1987-04-10

    申请人： Takashi Shinoda ,  Osamu Sakai

    发明人： Takashi Shinoda ,  Osamu Sakai

    IPC分类号： G11C29/00 ,  G06F11/10 ,  G11C7/00 ,  G11C17/00 ,  G11C17/12 ,  G11C29/42 ,  G06F11/00

    CPC分类号： G06F11/1008 ,  G06F11/1076 ,  G11C17/126

    摘要： In a read only semiconductor memory, signal lines such as data lines are subjected to an undesired parasitic capacitance which restricts the signal changing rate along the lines. The parasitic capacitance which is driven by a memory cell will become increasingly higher as the memory capacity is increased. According to the present invention, a differential sense amplifier is used to amplify the data signals which are read out of the memory cell. At the same time, a dummy cell is used to generate a reference potential which is to be referred to by the differential sense amplifier. In particular, a dummy cell arrangement is provided wherein each dummy cell includes at least two series-connected semiconductor elements to provide a predetermined dummy cell conductance to establish a reference value. Another aspect of the invention lies in the use of column switches between a common data line and data lines of the memory arrays for coupling only one data line at a time through the column switch to the sense amplifier. In addition, a built-in error-correcting-code circuit is provided which operates in conjunction with a selecting circuit so that memory cells delivering a predetermined set of data are spaced apart from one another by at least predetermined distances to reduce the likelihood of errors from immediately adjacent memory cells.

    摘要翻译： 在只读半导体存储器中，诸如数据线的信号线受到不期望的寄生电容的限制，沿着线路限制信号变化率。 随着存储器容量的增加，由存储器单元驱动的寄生电容将变得越来越高。 根据本发明，使用差分读出放大器来放大从存储单元读出的数据信号。 同时，使用虚拟单元来产生由差分读出放大器参考的参考电位。 特别地，提供了一种虚设单元布置，其中每个虚拟单元包括至少两个串联连接的半导体元件，以提供预定的虚设单元电导以建立参考值。 本发明的另一方面在于使用公共数据线和存储器阵列的数据线之间的列开关，用于仅通过列开关将一条数据线耦合到读出放大器。 此外，提供内置的纠错码电路，其与选择电路一起操作，使得传递预定数据集的存储器单元彼此间隔至少预定距离以减少错误的可能性 从紧邻的存储单元。

    Semiconductor memory with an improved dummy cell arrangement and with a built-in error correcting code circuit
    4.
    发明授权
    Semiconductor memory with an improved dummy cell arrangement and with a built-in error correcting code circuit 失效
    具有改进的虚设单元布置并具有内置纠错码电路的半导体存储器

    公开(公告)号：US4703453A

    公开(公告)日：1987-10-27

    申请号：US466483

    申请日：1983-02-15

    申请人： Takashi Shinoda ,  Osamu Sakai

    发明人： Takashi Shinoda ,  Osamu Sakai

    IPC分类号： G11C29/00 ,  G06F11/10 ,  G11C7/00 ,  G11C17/00 ,  G11C17/12 ,  G11C29/42

    CPC分类号： G06F11/1008 ,  G06F11/1076 ,  G11C17/126

    摘要： In a read only semiconductor memory, signal lines such as data lines are subjected to an undesired parasitic capacitance which restricts the signal changing rate along the lines. The parasitic capacitance which is driven by a memory cell will become increasingly higher as the memory capacity is increased. According to the present invention, a differential sense amplifier is used to amplify the data signals which are read out of the memory cell. At the same time, a dummy cell is used to generate a reference potential which is to be referred to by the differential sense amplifier. In particular, a dummy cell arrangement is provided wherein each dummy cell includes at least two series-connected semiconductor elements to provide a predetermined dummy cell conductance to establish a reference value. Another aspect of the invention lies in the use of column switches between a common data line and data lines of the memory arrays for coupling only one data line at a time through the column switch to the sense amplifier. In addition, a built-in error-correcting-code circuit is provided which operates in conjunction with a selecting circuit so that memory cells delivering a predetermined set of data are spaced apart from one another by at least predetermined distances to reduce the likelihood of errors from immediately adjacent memory cells.

    摘要翻译： 在只读半导体存储器中，诸如数据线的信号线受到不期望的寄生电容的限制，沿着线路限制信号变化率。 随着存储器容量的增加，由存储器单元驱动的寄生电容将变得越来越高。 根据本发明，使用差分读出放大器来放大从存储单元读出的数据信号。 同时，使用虚拟单元来产生由差分读出放大器参考的参考电位。 特别地，提供了一种虚设单元布置，其中每个虚拟单元包括至少两个串联连接的半导体元件，以提供预定的虚设单元电导以建立参考值。 本发明的另一方面在于使用公共数据线和存储器阵列的数据线之间的列开关，用于仅通过列开关将一条数据线耦合到读出放大器。 此外，提供内置的纠错码电路，其与选择电路一起操作，使得传递预定数据集的存储器单元彼此间隔至少预定距离以减少错误的可能性 从紧邻的存储单元。

    FUEL CELL POWER GENERATION SYSTEM
    6.
    发明申请
    FUEL CELL POWER GENERATION SYSTEM 审中-公开
    燃料电池发电系统

    公开(公告)号：US20110177414A1

    公开(公告)日：2011-07-21

    申请号：US13061394

    申请日：2009-08-28

    申请人： Takahiro Umeda ,  Eiichi Yasumoto ,  Shigeyuki Unoki ,  Yasushi Sugawara ,  Soichi Shibata ,  Osamu Sakai

    发明人： Takahiro Umeda ,  Eiichi Yasumoto ,  Shigeyuki Unoki ,  Yasushi Sugawara ,  Soichi Shibata ,  Osamu Sakai

    IPC分类号： H01M8/04

    CPC分类号： H01M8/0488 ,  H01M8/04223 ,  H01M8/04225 ,  H01M8/04228 ,  H01M8/04679 ,  H01M8/04753 ,  H01M2008/1095

    摘要： There is provided a fuel cell power generation system that exhibits superior efficiency of power generation and durability.The fuel cell power generation system includes: a fuel cell 4 including a fuel electrode 2, an oxidant electrode 3, and an electrolyte 1 on which the fuel electrode 2 and the oxidant electrode 3 are formed; an output control unit 11 that controls an output of the fuel cell 4; and a determination unit 12 that determines, based on an integrated amount of impurities contained in an oxidant gas and supplied to the oxidant electrode 3, a time at which the fuel cell 4 is brought into an open circuit state. The output control unit 11 halts power generation of the fuel cell 4 for a predetermined period of time every time determined by the determination unit 12, thereby bringing the fuel cell 4 into the open circuit state.

    摘要翻译： 提供了具有优异的发电效率和耐久性的燃料电池发电系统。 燃料电池发电系统包括：燃料电池4，包括燃料电极2，氧化剂电极3和形成燃料电极2和氧化剂电极3的电解质1; 输出控制单元11，其控制燃料电池4的输出; 以及确定单元12，其基于包含在氧化剂气体中并供应到氧化剂电极3的杂质的积分量，确定燃料电池4处于开路状态的时间。 输出控制单元11在由确定单元12确定的时间内停止燃料电池4的发电一段预定时间，从而使燃料电池4进入开路状态。

    Electrolyte membrane-electrode assembly for fuel cell and operation method of fuel cell using the same
    7.
    发明授权
    Electrolyte membrane-electrode assembly for fuel cell and operation method of fuel cell using the same 失效
    用于燃料电池的电解质膜 - 电极组件及其使用的燃料电池的操作方法

    公开(公告)号：US07470483B2

    公开(公告)日：2008-12-30

    申请号：US10730256

    申请日：2003-12-09

    申请人： Akihiko Yoshida ,  Yoshihiro Hori ,  Osamu Sakai ,  Makoto Uchida ,  Eiichi Yasumoto ,  Shinya Kosako

    发明人： Akihiko Yoshida ,  Yoshihiro Hori ,  Osamu Sakai ,  Makoto Uchida ,  Eiichi Yasumoto ,  Shinya Kosako

    IPC分类号： H01M4/96

    CPC分类号： H01M8/1004 ,  H01M4/8605 ,  H01M8/04119

    摘要： A carbon fiber woven fabric for use as a gas diffusion layer base material in a polymer electrolyte fuel cell has a surface that is smoothed and further optimized to inhibit non-uniform infiltration of a coating for water-repellent-layer formation, to provide an electrolyte membrane-electrode assembly suitable for operation under a high humidification condition. The gas diffusion layer base material may be a carbon fiber woven fabric, wherein a ratio of the area of gap portions where neither warp thread nor weft thread exists: (10/W−Y)(10/Z−X) to the area of portions where warp thread is crossing weft thread: XY mm2 is in the range of about 1/1500 to about 1/5, where the carbon fiber woven fabric has a warp density of Z threads/cm, a weft density of W threads/cm, a warp thickness of X mm and a weft thickness of Y mm.

    摘要翻译： 在聚合物电解质燃料电池中用作气体扩散层基材的碳纤维织物具有平滑化和进一步优化的表面，以抑制用于防水层形成的涂层的不均匀渗透，从而提供电解质 膜 - 电极组件适用于高加湿条件下的操作。 气体扩散层基材可以是碳纤维织物，其中不存在经线和纬纱的间隙部分的面积比（10 / WY）（10 / ZX）与经线部分的面积 横穿纬纱：XY mm2在约1/1500至约1/5的范围内，其中碳纤维织物的经纱密度为Z线/厘米，纬纱密度为W丝/厘米，经纱厚度 X mm，纬纱厚度Y mm。

    Stretch rod extending device and bottom mold lifting device for stretch blow molding machine
    8.
    发明授权
    Stretch rod extending device and bottom mold lifting device for stretch blow molding machine 失效
    拉伸吹塑机拉伸杆延伸装置和底模提升装置

    公开(公告)号：US07314360B2

    公开(公告)日：2008-01-01

    申请号：US10537972

    申请日：2003-12-10

    申请人： Hideaki Koda ,  Sentaro Kobayashi ,  Osamu Sakai ,  Motohiro Matsuzawa

    发明人： Hideaki Koda ,  Sentaro Kobayashi ,  Osamu Sakai ,  Motohiro Matsuzawa

    IPC分类号： B29C49/12 ,  B29C49/48

    CPC分类号： B29C49/06 ,  B29C49/12 ,  B29C2049/1219 ,  B29C2049/129 ,  B29C2049/1295

    摘要： Improvement of simplicity and durability of a stretch rod extending device and a bottom mold lifting device, equipped on a stretch blow molding machine, is achieved by applying a combination of a magnetic screw shaft and a magnetic nut member, which is able to convert rotary-linear movement smoothly without contact. The nut member and the screw shaft of the extending device 6 and lifting device 30 comprise a magnetic nut member 65, 116 and a magnetic screw shaft 66, 117, having spiral N magnetic pole and S magnetic pole alternately provided on inner peripheral surface of a cylindrical member and outer peripheral surface of a shaft at a same regular pitch. The magnetic screw shaft is inserted into the plunger 61, 115, having the magnetic nut member equipped inside with keeping required clearance so as to match the magnetic pole to oppose the magnetic nut member at the same poles each other.

    摘要翻译： 通过应用磁性螺杆轴和磁性螺母构件的组合来实现拉伸吹塑机上的拉伸杆延伸装置和底部模具提升装置的简单性和耐久性的改进， 线性运动平稳无接触。 延伸装置6和提升装置30的螺母构件和螺纹轴包括磁性螺母构件65,116和具有螺旋N磁极和S磁极的磁性螺杆轴66,117，磁性螺杆轴66和117交替地设置在 圆柱形构件和轴的外周表面以相同的规则间距。 磁性螺杆轴被插入到具有安装在内部的磁性螺母构件的柱塞61,115中，并保持所需的间隙，以使磁极与相同磁极处的磁极相对。

    Polymer electrolyte fuel cell and production method thereof
    9.
    发明授权
    Polymer electrolyte fuel cell and production method thereof 失效
    聚合物电解质燃料电池及其制备方法

    公开(公告)号：US07132187B2

    公开(公告)日：2006-11-07

    申请号：US10256269

    申请日：2002-09-27

    申请人： Yasushi Sugawara ,  Makoto Uchida ,  Yoshihiro Hori ,  Akihiko Yoshida ,  Osamu Sakai ,  Takeshi Yonamine ,  Shinichi Arisaka ,  Yasuo Takebe

    发明人： Yasushi Sugawara ,  Makoto Uchida ,  Yoshihiro Hori ,  Akihiko Yoshida ,  Osamu Sakai ,  Takeshi Yonamine ,  Shinichi Arisaka ,  Yasuo Takebe

    IPC分类号： H01M4/96

    CPC分类号： H01M4/881 ,  H01M4/9083 ,  H01M8/1004 ,  H01M2300/0094 ,  Y02P70/56

    摘要： Disclosed is a fuel cell comprising: a hydrogen-ion conductive polymer electrolyte membrane; a pair of electrodes sandwiching the hydrogen-ion conductive polymer electrolyte membrane; a first separator plate having a gas flow path for supplying a fuel gas to one of the electrodes; and a second separator plate having a gas flow path for supplying an oxidant gas to the other of the electrodes, wherein each of the electrodes has an electrode catalyst layer comprising at least a conductive carbon particle carrying an electrode catalyst particle and a hydrogen-ion conductive polymer electrolyte, the electrode catalyst layer being in contact with the hydrogen-ion conductive polymer electrolyte membrane, and at least one of the electrodes comprises a catalyst for trapping the fuel gas or the oxidant gas which has passed through the hydrogen-ion conductive polymer electrolyte membrane.

    摘要翻译： 公开了一种燃料电池，包括：氢离子导电聚合物电解质膜; 夹着氢离子导电性聚合物电解质膜的一对电极; 第一隔板，具有用于将燃料气体供给到所述电极之一的气体流路; 以及具有用于向另一个电极供给氧化剂气体的气体流路的第二隔板，其中每个电极具有至少包含载有电极催化剂颗粒的导电性碳颗粒和氢离子导电性的电极催化剂层 聚合物电解质，电极催化剂层与氢离子导电聚合物电解质膜接触，并且至少一个电极包括用于捕获通过氢离子导电聚合物电解质的燃料气体或氧化剂气体的催化剂 膜。