SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20090085060A1

    公开(公告)日:2009-04-02

    申请号:US12202607

    申请日:2008-09-02

    IPC分类号: H01L29/00

    CPC分类号: H01L29/7393

    摘要: In a high-voltage semiconductor switching element, in addition to a first emitter region that is necessary for switching operations, a second emitter region, which is electrically connected with the first emitter region through a detection resistor in current detection means and is electrically connected with the current detection means, is formed. No emitter electrode is formed on the second emitter region, while an emitter electrode is formed on a part of a base region that is adjacent to the second emitter region.

    摘要翻译: 在高压半导体开关元件中,除了开关操作所需的第一发射极区域之外,通过电流检测装置中的检测电阻器与第一发射极区域电连接的第二发射极区域,并与 形成电流检测装置。 在第二发射极区域上不形成发射电极,而在与第二发射极区域相邻的基极区域的一部分上形成发射电极。

    Driving circuit for power switching device, driving method thereof, and switching power supply apparatus
    4.
    发明授权
    Driving circuit for power switching device, driving method thereof, and switching power supply apparatus 有权
    电力开关装置的驱动电路及其驱动方法以及开关电源装置

    公开(公告)号:US08031496B2

    公开(公告)日:2011-10-04

    申请号:US12265217

    申请日:2008-11-05

    申请人: Takashi Saji

    发明人: Takashi Saji

    IPC分类号: H02M7/68

    摘要: A driving circuit includes a generation unit configured to generate a driving signal for turning on and off a power switching device, the driving signal having plural levels of voltage at which the power switching device is turned on. The driving circuit also includes a switching control unit configured to switch between the plural levels of voltage at which the power switching device is turned on, depending on a status of the power switching device.

    摘要翻译: 驱动电路包括:生成单元,被配置为产生用于接通和关断功率开关器件的驱动信号,所述驱动信号具有多个电平开关器件导通的电压。 驱动电路还包括开关控制单元,其被配置为根据电力开关装置的状态在电力开关装置接通的多个电压水平之间进行切换。

    High-voltage semiconductor switching element
    5.
    发明授权
    High-voltage semiconductor switching element 失效
    高压半导体开关元件

    公开(公告)号:US07732833B2

    公开(公告)日:2010-06-08

    申请号:US12208615

    申请日:2008-09-11

    IPC分类号: H01L21/02

    摘要: In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter region, are selectively formed. The emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from a collector region of the first conductivity type, which is formed so as to be spaced away from the base region, toward the base region. The width of the sense region, the width of the emitter region, the width of a part of the base region that is adjacent to the sense region, and the width of a part of the base region that is adjacent to the emitter region in the second direction are set in such a manner that a sense ratio varies in a desired manner in accordance with variation in collector current.

    摘要翻译: 在第一导电类型的基极区域中,选择性地形成与发射极区间隔开的至少一个第二导电类型的发射极区域和第二导电类型的至少一个感测区域。 发射极区域和感测区域被定位成在与从第一导电类型的集电极区域垂直的第二方向的第二方向上排列,该第一方向形成为与基极区域分开形成, 基地区。 感测区域的宽度,发射极区域的宽度,与感测区域相邻的基极区域的一部分的宽度,以及与区域中的发射极区域相邻的基极区域的一部分的宽度 第二方向被设置为使得感测比根据集电极电流的变化以期望的方式变化。

    HIGH-VOLTAGE SEMICONDUCTOR SWITCHING ELEMENT
    6.
    发明申请
    HIGH-VOLTAGE SEMICONDUCTOR SWITCHING ELEMENT 失效
    高压半导体开关元件

    公开(公告)号:US20090085061A1

    公开(公告)日:2009-04-02

    申请号:US12208615

    申请日:2008-09-11

    IPC分类号: H01L23/62 H01L29/768

    摘要: In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter region, are selectively formed. The emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from a collector region of the first conductivity type, which is formed so as to be spaced away from the base region, toward the base region. The width of the sense region, the width of the emitter region, the width of a part of the base region that is adjacent to the sense region, and the width of a part of the base region that is adjacent to the emitter region in the second direction are set in such a manner that a sense ratio varies in a desired manner in accordance with variation in collector current.

    摘要翻译: 在第一导电类型的基极区域中,选择性地形成与发射极区间隔开的至少一个第二导电类型的发射极区域和第二导电类型的至少一个感测区域。 发射极区域和感测区域被定位成在与从第一导电类型的集电极区域垂直的第二方向的第二方向上排列,该第一方向形成为与基极区域分开形成, 基地区。 感测区域的宽度,发射极区域的宽度,与感测区域相邻的基极区域的一部分的宽度,以及与区域中的发射极区域相邻的基极区域的一部分的宽度 第二方向被设置为使得感测比根据集电极电流的变化以期望的方式变化。

    ENERGY TRANSMISSION DEVICE AND SEMICONDUCTOR DEVICE FOR ENERGY TRANSMISSION CONTROL
    7.
    发明申请
    ENERGY TRANSMISSION DEVICE AND SEMICONDUCTOR DEVICE FOR ENERGY TRANSMISSION CONTROL 有权
    能量传输装置和能量传输控制的半导体装置

    公开(公告)号:US20100085781A1

    公开(公告)日:2010-04-08

    申请号:US12535211

    申请日:2009-08-04

    IPC分类号: H02M3/335

    CPC分类号: H02M3/33523

    摘要: The present invention includes a voltage clamping circuit 6 for outputting a voltage signal, which has been clamped to a predetermined voltage, from the drain voltage of a switching element 1, and a turn-on detection circuit 7 for detecting the turn-on timing of the switching element 1 from the voltage signal. Thus it is possible to turn on the switching element 1 at the minimum value of the drain voltage without adding external terminals.

    摘要翻译: 本发明包括用于从开关元件1的漏极电压输出已被钳位到预定电压的电压信号的电压钳位电路6和用于检测开关定时的导通时间的导通检测电路7 开关元件1从电压信号。 因此,可以以不增加外部端子的方式将开关元件1接通于漏极电压的最小值。

    DRIVING CIRCUIT FOR POWER SWITCHING DEVICE, DRIVING METHOD THEREOF, AND SWITCHING POWER SUPPLY APPARATUS
    8.
    发明申请
    DRIVING CIRCUIT FOR POWER SWITCHING DEVICE, DRIVING METHOD THEREOF, AND SWITCHING POWER SUPPLY APPARATUS 有权
    用于电源切换装置的驱动电路及其驱动方法和切换电源装置

    公开(公告)号:US20090116265A1

    公开(公告)日:2009-05-07

    申请号:US12265217

    申请日:2008-11-05

    申请人: Takashi Saji

    发明人: Takashi Saji

    IPC分类号: H02M5/45

    摘要: A driving circuit according to the present invention is a driving circuit which drives the voltage control type switching device in the switching power supply apparatus and includes: a generation unit configured to generate a driving signal for turning on and off the voltage control type switching device, the driving signal having plural levels of voltage at which the voltage control type switching device is turned on; and a switching control unit configured to switch between the plural levels of voltage at which the power switching device is turned on, depending on a status of the power switching device.

    摘要翻译: 根据本发明的驱动电路是驱动电路,其驱动开关电源装置中的电压控制型开关装置,包括:生成单元,被配置为产生用于导通和关断电压控制型开关装置的驱动信号, 所述驱动信号具有所述电压控制型切换装置导通的多个电压电平; 以及开关控制单元,其被配置为根据电力开关装置的状态在电力开关装置接通的多个电压之间进行切换。

    Semiconductor device and switching power supply apparatus
    9.
    发明授权
    Semiconductor device and switching power supply apparatus 有权
    半导体装置和开关电源装置

    公开(公告)号:US08339816B2

    公开(公告)日:2012-12-25

    申请号:US12726808

    申请日:2010-03-18

    申请人: Takashi Saji

    发明人: Takashi Saji

    IPC分类号: H02M3/335

    CPC分类号: H02M3/33507 H02M1/32

    摘要: A switching power supply apparatus includes: a turn-on control circuit which generates a turn-on signal; a feedback control circuit which generates a reference voltage VEAO indicating a limitation level for a current ID flowing into a switching element, by referring to a feedback signal IFB indicating an output current voltage VOUT, the limitation level which decreases as the output direct current voltage becomes greater; an overcurrent protection level setting circuit which generates a reference voltage VLR indicating an overcurrent protection level; a current detecting terminal; an offset current generating circuit which provides an offset current IIS from the current detecting terminal, the offset current IIS which is greater as the output current voltage VOUT is greater; and a turn-off control circuit which generates a turn-off signal by comparing a voltage applied to the current detecting terminal with each of the reference voltage VEAO, and the reference voltage VLR.

    摘要翻译: 开关电源装置包括:产生导通信号的导通控制电路; 反馈控制电路,通过参照表示输出电流电压VOUT的反馈信号IFB,生成表示流入开关元件的电流ID的限制电平的基准电压VEAO,限制电平随着输出直流电压变为 更大 过电流保护电平设定电路,其生成表示过电流保护电平的基准电压VLR; 电流检测端子; 偏移电流产生电路,其从电流检测端子提供偏移电流IIS,偏移电流IIS随着输出电流电压VOUT较大而更大; 以及截止控制电路,其通过将施加到电流检测端子的电压与参考电压VEAO和参考电压VLR中的每一个进行比较来产生关断信号。

    Energy transmission device and semiconductor device for energy transmission control
    10.
    发明授权
    Energy transmission device and semiconductor device for energy transmission control 有权
    能量传输装置和能量传输控制的半导体装置

    公开(公告)号:US08274802B2

    公开(公告)日:2012-09-25

    申请号:US12535211

    申请日:2009-08-04

    IPC分类号: H02M3/335

    CPC分类号: H02M3/33523

    摘要: The present invention includes a voltage clamping circuit 6 for outputting a voltage signal, which has been clamped to a predetermined voltage, from the drain voltage of a switching element 1, and a turn-on detection circuit 7 for detecting the turn-on timing of the switching element 1 from the voltage signal. Thus it is possible to turn on the switching element 1 at the minimum value of the drain voltage without adding external terminals.

    摘要翻译: 本发明包括用于从开关元件1的漏极电压输出已被钳位到预定电压的电压信号的电压钳位电路6和用于检测开关定时的导通时间的导通检测电路7 开关元件1从电压信号。 因此,可以以不增加外部端子的方式将开关元件1接通于漏极电压的最小值。