公开(公告)号：US07943964B2

公开(公告)日：2011-05-17

申请号：US12096986

申请日：2006-10-16

申请人： Shinsuke Fujiwara ,  Tomoki Uemura ,  Takuji Okahisa ,  Koji Uematsu ,  Manabu Okui ,  Muneyuki Nishioka ,  Shin Hashimoto

发明人： Shinsuke Fujiwara ,  Tomoki Uemura ,  Takuji Okahisa ,  Koji Uematsu ,  Manabu Okui ,  Muneyuki Nishioka ,  Shin Hashimoto

IPC分类号： H01L33/30

CPC分类号： H01L21/02658 ,  C30B25/02 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0254

摘要： An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm−2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.

摘要翻译： 本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。 主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。 内部区域的总位错密度为1×102cm 2以上且1×10 6 cm -2以下。 由此，可以提供具有大尺寸和合适的位错密度的Al x Ga y In 1-x-y N晶体基板，用作半导体器件的基板，包括Al x Ga y In 1-x-y N晶体基板的半导体器件，以及 制造相同。

公开(公告)号：US20090194847A1

公开(公告)日：2009-08-06

申请号：US12096986

申请日：2006-10-16

申请人： Shinsuke Fujiwara ,  Tomoki Uemura ,  Takuji Okahisa ,  Koji Uematsu ,  Manabu Okui ,  Muneyuki Nishioka ,  Shin Hashimoto

发明人： Shinsuke Fujiwara ,  Tomoki Uemura ,  Takuji Okahisa ,  Koji Uematsu ,  Manabu Okui ,  Muneyuki Nishioka ,  Shin Hashimoto

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/02658 ,  C30B25/02 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0254

摘要： An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm-31 2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.

摘要翻译： 本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。 主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。 内部区域的总位错密度为至少1×102cm-2，最多为1×106cm-31.2。由此，可以提供具有大尺寸和合适位错密度的Al x Ga y In 1-x-y N晶体基板，用作 用于半导体器件的衬底，包括Al x Ga y In 1-x-y N晶体衬底的半导体器件及其制造方法。

公开(公告)号：US20090127664A1

公开(公告)日：2009-05-21

申请号：US12273179

申请日：2008-11-18

申请人： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L31/20 ,  H01L29/20

CPC分类号： H01L21/02576 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262

摘要： A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a first group III nitride semiconductor crystal doped with silicon by using silicon tetrachloride (SiCl4) gas as doping gas, on the underlying substrate by vapor phase growth. The growth rate of the first group III nitride semiconductor crystal is at least 200 μm/h and not more than 2000 μm/h.

摘要翻译： III族氮化物半导体晶体的生长方法包括以下步骤：制备下面的衬底，并且通过使用四氯化硅（SiCl 4）气体作为掺杂气体来生长掺杂有硅的第一III族氮化物半导体晶体，通过气相生长在下面的衬底上 成长。 第一III族氮化物半导体晶体的生长速率为至少200μm/ h且不超过2000μm/ h。

公开(公告)号：US20090127663A1

公开(公告)日：2009-05-21

申请号：US12273137

申请日：2008-11-18

申请人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L29/20 ,  H01L21/322

CPC分类号： H01L21/02576 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262

摘要： A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a group III nitride semiconductor crystal doped with silicon by using silicon tetrafluoride gas as doping gas, on the underlying substrate by vapor phase growth.

摘要翻译： III族氮化物半导体晶体的生长方法包括以下步骤：通过使用四氟化硅气体作为掺杂气体，通过气相生长在底层衬底上生长掺杂有硅的III族氮化物半导体晶体。

公开(公告)号：US20090127662A1

公开(公告)日：2009-05-21

申请号：US12273101

申请日：2008-11-18

申请人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B29/403

摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·m and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.

摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体衬底的电阻率至少为1×10 -4Ω·cm且不大于0.1Ω·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。

公开(公告)号：US20090080475A1

公开(公告)日：2009-03-26

申请号：US12233174

申请日：2008-09-18

申请人： Masashi YOSHIMURA ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

发明人： Masashi YOSHIMURA ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

IPC分类号： H01S3/10 ,  G02F1/35 ,  C01B35/10

CPC分类号： G02F1/37 ,  G02F1/3551 ,  G02F2001/3505 ,  G02F2001/354

摘要： An optical wavelength conversion element includes a cesium-lithium-borate crystal processed into a 10-mm long optical element cut in an orientation that allows a fourth harmonic of a Nd:YAG laser to be generated. A transmittance (Ta) at 3589 cm−1 in an infrared transmission spectrum of the optical element is used as an index that indicates a content of water impurities in the crystal and is independent of a polarization direction. An actual measurement of the transmittance Ta is at least 1%, without taking into account loss at an optically polished surface of the crystal. A wavelength conversion device, a ultraviolet laser irradiation apparatus, a laser processing system, and a method of manufacturing an optical wavelength conversion element are also described.

摘要翻译： 光波长转换元件包括加工成允许产生Nd：YAG激光器的四次谐波的取向切割的10mm长的光学元件的铯 - 硼酸锂晶体。 光学元件的红外透射光谱中的3589cm -1处的透射率（Ta）被用作指示晶体中的水杂质含量并且与偏振方向无关的指标。 透射率Ta的实际测量值至少为1％，而不考虑在晶体的光学抛光表面处的损耗。 还描述了波长转换装置，紫外激光照射装置，激光加工系统和制造光波长转换元件的方法。

公开(公告)号：US08698282B2

公开(公告)日：2014-04-15

申请号：US12273101

申请日：2008-11-18

申请人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B29/403

摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·cm and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.

摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体基板的电阻率至少为1×10-4＆OHgr·cm，不大于0.1＆OHgr·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。

公开(公告)号：US07948673B2

公开(公告)日：2011-05-24

申请号：US12233174

申请日：2008-09-18

申请人： Masashi Yoshimura ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

发明人： Masashi Yoshimura ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

IPC分类号： G02F1/35 ,  H01S3/10

CPC分类号： G02F1/37 ,  G02F1/3551 ,  G02F2001/3505 ,  G02F2001/354

摘要： An optical wavelength conversion element includes a cesium-lithium-borate crystal processed into a 10-mm long optical element cut in an orientation that allows a fourth harmonic of a Nd:YAG laser to be generated. A transmittance (Ta) at 3589 cm−1 in an infrared transmission spectrum of the optical element is used as an index that indicates a content of water impurities in the crystal and is independent of a polarization direction. An actual measurement of the transmittance Ta is at least 1%, without taking into account loss at an optically polished surface of the crystal. A wavelength conversion device, a ultraviolet laser irradiation apparatus, a laser processing system, and a method of manufacturing an optical wavelength conversion element are also described.

摘要翻译： 光波长转换元件包括加工成允许产生Nd：YAG激光器的四次谐波的取向切割的10mm长的光学元件的铯 - 硼酸锂晶体。 光学元件的红外透射光谱中的3589cm -1处的透射率（Ta）被用作指示晶体中的水杂质含量并且与偏振方向无关的指标。 透射率Ta的实际测量值至少为1％，而不考虑在晶体的光学抛光表面处的损耗。 还描述了波长转换装置，紫外激光照射装置，激光加工系统和制造光波长转换元件的方法。

公开(公告)号：US20100164070A1

公开(公告)日：2010-07-01

申请号：US12719719

申请日：2010-03-08

申请人： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B29/403

摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·cm and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.

摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体基板的电阻率至少为1×10-4＆OHgr·cm，不大于0.1＆OHgr·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。

公开(公告)号：US07744696B2

公开(公告)日：2010-06-29

申请号：US10545314

申请日：2004-02-13

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Muneyuki Nishioka ,  Satoru Fukumoto ,  Tomoyo Matsui ,  Takashi Saji

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Muneyuki Nishioka ,  Satoru Fukumoto ,  Tomoyo Matsui ,  Takashi Saji

IPC分类号： C30B11/00

CPC分类号： C30B35/007 ,  C01B35/12 ,  C30B11/02 ,  C30B29/22

摘要： A borate-based crystal excellent in uniformity and reliability, which is useful as an optical wavelength conversion device, etc., and can be easily produced at low cost in a short period of time, by the steps of dissolving water-soluble starting materials in water to prepare an aqueous solution, evaporating water in the aqueous solution followed by sintering or evaporating the water and not sintering, thereby forming a crystal growth material, and melting the resultant material to grow a crystal. Further, a highly reliable laser oscillation apparatus can be achieved by using this crystal as an optical wavelength conversion device.

摘要翻译： 具有优异的均匀性和可靠性的硼酸盐基结晶，其可用作光波长转换装置等，并且可以在短时间内以低成本容易地制备，通过将水溶性原料溶解在 水以制备水溶液，在水溶液中蒸发水，然后烧结或蒸发水而不烧结，从而形成晶体生长材料，并熔化所得材料以生长晶体。 此外，通过使用该晶体作为光学波长转换装置，可以实现高可靠性的激光振荡装置。