METHOD AND APPARATUS FOR WRITING
    1.
    发明申请
    METHOD AND APPARATUS FOR WRITING 有权
    书写方法与装置

    公开(公告)号:US20100173235A1

    公开(公告)日:2010-07-08

    申请号:US12649846

    申请日:2009-12-30

    IPC分类号: G03F7/20 G21K5/00 G21K1/00

    摘要: A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose.

    摘要翻译: 一种写入方法包括计算用于校正带电粒子束写入中的邻近效应的邻近效应校正剂量,对于通过将目标对象的写入区域虚拟地分成多个第一网格尺寸的第一网格区域而制成的每个第一网格区域 通过使用计算的邻近效应校正剂量和相对于计算区域的一部分的第一网格尺寸的面积密度来计算雾化效果校正剂量,以计算用于校正雾化效果的起雾效果校正剂量 带电粒子束写入,并且相对于计算区域的剩余部分使用相对于第一网格尺寸大的第二网格尺寸的面积密度,合成每个图像的雾化效果校正剂量和邻近效应校正剂量 第一网格区域,并且基于合成的校正剂量,通过使用带电粒子束将目标物体上的图案写入。

    Beam dose computing method and writing method and record carrier body and writing apparatus
    2.
    发明授权
    Beam dose computing method and writing method and record carrier body and writing apparatus 有权
    光束剂量计算方法和写入方法和记录载体体和书写装置

    公开(公告)号:US08352889B2

    公开(公告)日:2013-01-08

    申请号:US13323986

    申请日:2011-12-13

    摘要: A beam dose computing method includes dividing a surface area of a target object into include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions to create a map of base doses of the beam in respective of said second regions and to prepare a map of proximity effect correction coefficients in respective of said second regions, using the maps to determine second corrected doses of the beam for proximity effect correction in the third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.

    摘要翻译: 射束剂量计算方法包括将目标物体的表面积分成包括不同尺寸的第一,第二和第三区域,第三区域的尺寸小于第一和第二区域,确定带电粒子束的第一校正剂量,以便 校正第一区域中的雾化效果,确定用于校正由于第二区域中的负载效应而发生的图案线宽度偏差的校正大小值,以在所述第二区域的各自中创建所述光束的基本剂量图,并且准备接近的图 在所述第二区域的各个区域中的效应校正系数,使用该图确定在第三区域中用于邻近效应校正的光束的第二校正剂量,并且使用第一和第二校正剂量来确定表面上每个位置处的实际光束剂量 的所述物体。

    BEAM DOSE COMPUTING METHOD AND WRITING METHOD AND RECORD CARRIER BODY AND WRITING APPARATUS
    3.
    发明申请
    BEAM DOSE COMPUTING METHOD AND WRITING METHOD AND RECORD CARRIER BODY AND WRITING APPARATUS 有权
    光束剂量计算方法和书写方法和记录载体体系和书写装置

    公开(公告)号:US20100015537A1

    公开(公告)日:2010-01-21

    申请号:US12566525

    申请日:2009-09-24

    IPC分类号: G03F7/20 H01J37/317 H01J3/26

    摘要: A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.

    摘要翻译: 光束剂量计算方法包括:从目标对象的表面区域划分出区域的行和列的矩阵,以包括不同大小的第一,第二和第三区域,第三区域的尺寸小于第一和第二区域 确定用于校正所述第一区域中的雾化效应的带电粒子束的第一校正剂量,确定用于校正由于所述第二区域中的负载效应而导致的图案线宽度偏差的校正大小值,使用所述第二区域中的所述校正大小值来创建 使用所述校正的大小值,在所述第二区域的各个区域中的所述光束的基本剂量的映射,以使用所述映射来确定所述第二区域中的相应的所述第二区域中的邻近效应校正系数的映射,以确定所述光束的第二校正剂量 校正所述第三区域中的邻近效应,并且使用第一和第二校正剂量来确定实际波束d 在所述对象的表面上的每个位置上。

    Method for resizing pattern to be written by lithography technique, and charged particle beam writing method
    4.
    发明授权
    Method for resizing pattern to be written by lithography technique, and charged particle beam writing method 有权
    用于通过光刻技术来调整图案的尺寸的方法,以及带电粒子束写入方法

    公开(公告)号:US08429575B2

    公开(公告)日:2013-04-23

    申请号:US13275448

    申请日:2011-10-18

    IPC分类号: G06F17/50

    摘要: A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing.

    摘要翻译: 通过使用光刻技术来调整要写入的图案的尺寸的方法包括:对通过将目标工件的写入区域进行实际分割而形成的每个小区域,计算用于校正由负载效应引起的尺寸误差的图案的第一维度校正量 基于每个小区域的面积密度预定尺寸的网格,根据要写入每个小区域的图案的线宽度尺寸来计算第二维度校正量,通过使用来校正第一维度校正量 第二维度校正量,并且通过使用校正的第一维度校正量来调整图案的线宽度尺寸,并输出调整大小的结果。

    Method and apparatus for writing
    5.
    发明授权
    Method and apparatus for writing 有权
    写作方法和装置

    公开(公告)号:US08309283B2

    公开(公告)日:2012-11-13

    申请号:US12649846

    申请日:2009-12-30

    IPC分类号: G03C5/00

    摘要: A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose.

    摘要翻译: 一种写入方法包括计算用于校正带电粒子束写入中的邻近效应的邻近效应校正剂量,对于通过将目标对象的写入区域虚拟地分成多个第一网格尺寸的第一网格区域而制成的每个第一网格区域 通过使用计算的邻近效应校正剂量和相对于计算区域的一部分的第一网格尺寸的面积密度来计算雾化效果校正剂量,以计算用于校正雾化效果的雾化效果校正剂量 带电粒子束写入,并且相对于计算区域的剩余部分使用相对于第一网格尺寸大的第二网格尺寸的面积密度,合成每个图像的雾化效果校正剂量和邻近效应校正剂量 第一网格区域,并且通过使用基于合成校正剂量的带电粒子束将目标物体上的图案写入。

    Charged particle beam writing apparatus, and apparatus and method for correcting dimension error of pattern
    6.
    发明授权
    Charged particle beam writing apparatus, and apparatus and method for correcting dimension error of pattern 有权
    带电粒子束写入装置,以及用于校正图案尺寸误差的装置和方法

    公开(公告)号:US08122390B2

    公开(公告)日:2012-02-21

    申请号:US12369252

    申请日:2009-02-11

    IPC分类号: G06F17/50

    摘要: A charged particle beam writing apparatus which the apparatus includes a first area density calculation unit and a first dimension error calculation unit. The apparatus includes a first dimension calculation unit which calculates a second dimension of a pattern obtained by correcting the first dimension error of the first dimension, a second area density calculation unit which calculates a second area density occupied by the pattern of the second dimension in the predetermined region, a second dimension error calculation unit which calculates a second dimension error caused by the loading effect, a second dimension calculation unit which calculates a third dimension by adding the second dimension error to the second dimension, a judgment unit which judges whether a difference between the first dimension and the third dimension is within a predetermined range, and a writing unit which writes the pattern of the second dimension onto a target workpiece.

    摘要翻译: 一种带电粒子束写入装置,该装置包括第一区域密度计算单元和第一维度误差计算单元。 该装置包括第一维度计算单元,其计算通过校正第一维度的第一维度误差而获得的图案的第二维度;第二区域密度计算单元,计算第二维度的图案所占据的第二区域密度 计算由所述装载效果引起的第二尺寸误差的第二尺寸误差计算单元,通过将所述第二尺寸误差与所述第二尺寸相加来计算第三尺寸的第二尺寸计算单元,判断单元, 在第一维度和第三维度之间的距离在预定范围内,以及写入单元,其将第二维度的图案写入到目标工件上。

    Beam dose computing method and writing method and record carrier body and writing apparatus
    7.
    发明授权
    Beam dose computing method and writing method and record carrier body and writing apparatus 有权
    光束剂量计算方法和写入方法和记录载体体和书写装置

    公开(公告)号:US08103980B2

    公开(公告)日:2012-01-24

    申请号:US12566525

    申请日:2009-09-24

    摘要: A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.

    摘要翻译: 光束剂量计算方法包括:从目标对象的表面区域划分出区域的行和列的矩阵,以包括不同大小的第一,第二和第三区域,第三区域的尺寸小于第一和第二区域 确定用于校正所述第一区域中的雾化效应的带电粒子束的第一校正剂量,确定用于校正由于所述第二区域中的负载效应而导致的图案线宽度偏差的校正大小值,使用所述第二区域中的所述校正大小值来创建 使用所述校正的大小值,在所述第二区域的各个区域中的所述光束的基本剂量的映射,以使用所述映射来确定所述第二区域中的相应的所述第二区域中的邻近效应校正系数的映射,以确定所述光束的第二校正剂量 校正所述第三区域中的邻近效应,并且使用第一和第二校正剂量来确定实际波束d 在所述对象的表面上的每个位置上。

    METHOD FOR RESIZING PATTERN TO BE WRITTEN BY LITHOGRAPHY TECHNIQUE, AND CHARGED PARTICLE BEAM WRITING METHOD
    8.
    发明申请
    METHOD FOR RESIZING PATTERN TO BE WRITTEN BY LITHOGRAPHY TECHNIQUE, AND CHARGED PARTICLE BEAM WRITING METHOD 有权
    用于通过算术技术来记录图案的方法和充电的粒子束写法

    公开(公告)号:US20080184190A1

    公开(公告)日:2008-07-31

    申请号:US11851176

    申请日:2007-09-06

    IPC分类号: G06F17/50

    摘要: A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing.

    摘要翻译: 通过使用光刻技术来调整要写入的图案的尺寸的方法包括:对通过将目标工件的写入区域进行实际分割而形成的每个小区域,计算用于校正由加载效应引起的尺寸误差的图案的第一维度校正量 基于每个小区域的面积密度预定尺寸的网格,根据要写入每个小区域的图案的线宽度尺寸来计算第二维度校正量,通过使用来校正第一维度校正量 第二维度校正量,并且通过使用校正的第一维度校正量来调整图案的线宽度尺寸,并输出调整大小的结果。

    METHOD FOR RESIZING PATTERN TO BE WRITTEN BY LITHOGRAPHY TECHNIQUE, AND CHARGED PARTICLE BEAM WRITING METHOD
    10.
    发明申请
    METHOD FOR RESIZING PATTERN TO BE WRITTEN BY LITHOGRAPHY TECHNIQUE, AND CHARGED PARTICLE BEAM WRITING METHOD 有权
    用于通过算术技术来记录图案的方法和充电的粒子束写法

    公开(公告)号:US20120036486A1

    公开(公告)日:2012-02-09

    申请号:US13275448

    申请日:2011-10-18

    IPC分类号: G06F17/50

    摘要: A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing.

    摘要翻译: 通过使用光刻技术来调整要写入的图案的尺寸的方法包括:对通过将目标工件的写入区域进行实际分割而形成的每个小区域,计算用于校正由负载效应引起的尺寸误差的图案的第一维度校正量 基于每个小区域的面积密度预定尺寸的网格,根据要写入每个小区域的图案的线宽度尺寸来计算第二维度校正量,通过使用来校正第一维度校正量 第二维度校正量,并且通过使用校正的第一维度校正量来调整图案的线宽度尺寸,并输出调整大小的结果。