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    Substrate processing apparatus and substrate processing method
    3.
    发明申请
    Substrate processing apparatus and substrate processing method 审中-公开
    基板加工装置及基板处理方法

    公开(公告)号：US20090090397A1

    公开(公告)日：2009-04-09

    申请号：US12314197

    申请日：2008-12-05

    申请人： Takayuki Saito ,  Tsukuru Suzuki ,  Kaoru Yamada ,  Kenya Ito ,  Masayuki Kamezawa ,  Kenji Yamaguchi

    发明人： Takayuki Saito ,  Tsukuru Suzuki ,  Kaoru Yamada ,  Kenya Ito ,  Masayuki Kamezawa ,  Kenji Yamaguchi

    IPC分类号： B08B3/04

    CPC分类号： H01L21/6708 ,  B08B3/02 ,  Y10S134/902

    摘要： The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder 11 for holding a substrate W substantially horizontally and rotating the substrate W, and a processing liquid supply unit 15 for supplying a processing liquid onto a peripheral portion of the substrate W which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate W. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder 54 for holding a substrate W substantially horizontally and rotating the substrate W, and a cleaning liquid supply unit 53 having a cleaning liquid outlet 53a which is oriented from a center of the substrate W toward a peripheral portion of the substrate W with an elevation angle of not more than 45° from a surface of the substrate W. The cleaning liquid supply unit 53 supplies a cleaning liquid to the surface of the substrate W at a flow velocity of not less than 0.1 m/s.

    摘要翻译： 本发明提供一种适用于腐蚀形成在基板的周边部分上的薄膜的蚀刻装置中的基板处理装置和基板处理方法。 本发明还提供一种适用于在已被蚀刻的基板上进行清洗处理的清洗装置的基板处理装置和基板处理方法。 用于蚀刻的基板处理装置包括基板保持器11，用于基本上水平地保持基板W并旋转基板W;以及处理液体供应单元15，用于将处理液体供应到正在旋转的基板W的周边部分 处理液体相对于基板W是静止的。用于清洗基板的基板处理装置包括：基板保持件54，用于基本上水平地保持基板W并旋转基板W;以及清洗液供给部 单元53具有从基板W的中心朝向基板W的周边部分取向的清洗液出口53a，其与基板W的表面的仰角不大于45°。清洗液供给单元53 以不小于0.1m / s的流速将清洗液供给到基板W的表面。

    Substrate processing apparatus and substrate processing method
    4.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号：US07476290B2

    公开(公告)日：2009-01-13

    申请号：US10695826

    申请日：2003-10-30

    申请人： Takayuki Saito ,  Tsukuru Suzuki ,  Kaoru Yamada ,  Kenya Ito ,  Masayuki Kamezawa ,  Kenji Yamaguchi

    发明人： Takayuki Saito ,  Tsukuru Suzuki ,  Kaoru Yamada ,  Kenya Ito ,  Masayuki Kamezawa ,  Kenji Yamaguchi

    IPC分类号： B08B7/04

    CPC分类号： H01L21/6708 ,  B08B3/02 ,  Y10S134/902

    摘要： The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder for holding a substrate substantially horizontally and rotating the substrate, and a processing liquid supply unit for supplying a processing liquid onto a peripheral portion of the substrate which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder for holding a substrate substantially horizontally and rotating the substrate, and a cleaning liquid supply unit having a cleaning liquid outlet which is oriented from a center of the substrate toward a peripheral portion of the substrate with an elevation angle of not more than 45° from a surface of the substrate. The cleaning liquid supply unit supplies a cleaning liquid to the surface of the substrate at a flow velocity of not less than 0.1 m/s.

    摘要翻译： 本发明提供一种适用于腐蚀形成在基板的周边部分上的薄膜的蚀刻装置中的基板处理装置和基板处理方法。 本发明还提供一种适用于在已被蚀刻的基板上进行清洗处理的清洗装置的基板处理装置和基板处理方法。 用于蚀刻的基板处理装置包括：基板保持器，用于基本上水平地保持基板并旋转基板;以及处理液体供应单元，用于将处理液体供应到正在旋转的基板的周边部分， 处理液相对于基板静止。 用于清洗基板的基板处理装置包括基板保持器，用于基本水平地保持基板并旋转基板;以及清洗液供给单元，其具有从基板的中心朝向基板的周边部分 该衬底的仰角与衬底的表面不超过45°。 清洗液供给部以不小于0.1m / s的流速向基板的表面供给清洗液。

    Substrate processing apparatus and substrate processing method
    5.
    发明申请
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号：US20050092351A1

    公开(公告)日：2005-05-05

    申请号：US10695826

    申请日：2003-10-30

    申请人： Takayuki Saito ,  Tsukuru Suzuki ,  Kaoru Yamada ,  Kenya Ito ,  Masayuki Kamezawa ,  Kenji Yamaguchi

    发明人： Takayuki Saito ,  Tsukuru Suzuki ,  Kaoru Yamada ,  Kenya Ito ,  Masayuki Kamezawa ,  Kenji Yamaguchi

    IPC分类号： B08B3/02 ,  H01L21/00

    CPC分类号： H01L21/6708 ,  B08B3/02 ,  Y10S134/902

    摘要： The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder 11 for holding a substrate W substantially horizontally and rotating the substrate W, and a processing liquid supply unit 15 for supplying a processing liquid onto a peripheral portion of the substrate W which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate W. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder 54 for holding a substrate W substantially horizontally and rotating the substrate W, and a cleaning liquid supply unit 53 having a cleaning liquid outlet 53a which is oriented from a center of the substrate W toward a peripheral portion of the substrate W with an elevation angle of not more than 45° from a surface of the substrate W. The cleaning liquid supply unit 53 supplies a cleaning liquid to the surface of the substrate W at a flow velocity of not less than 0.1 m/s.

    摘要翻译： 本发明提供一种适用于腐蚀形成在基板的周边部分上的薄膜的蚀刻装置中的基板处理装置和基板处理方法。 本发明还提供一种适用于在已被蚀刻的基板上进行清洗处理的清洗装置的基板处理装置和基板处理方法。 用于蚀刻的基板处理装置包括基板保持器11，用于基本上水平地保持基板W并旋转基板W;以及处理液体供应单元15，用于将处理液体供应到正在旋转的基板W的周边部分 处理液体相对于基板W是静止的。用于清洗基板的基板处理装置包括：基板保持件54，用于基本上水平地保持基板W并旋转基板W;以及清洗液供给部 单元53具有从基板W的中心朝向基板W的周边部分取向的清洗液出口53a，其与基板W的表面具有不大于45°的仰角。清洗液供给单元 53以不小于0.1m / s的流速向基板W的表面供给清洗液。

    Substrate processing apparatus, substrate processing method, and substrate holding apparatus
    7.
    发明申请
    Substrate processing apparatus, substrate processing method, and substrate holding apparatus 有权
    基板处理装置，基板处理方法以及基板保持装置

    公开(公告)号：US20060234503A1

    公开(公告)日：2006-10-19

    申请号：US10564980

    申请日：2004-07-28

    申请人： Kaoru Yamada ,  Takayuki Saito ,  Sumio Yabe ,  Kenya Ito ,  Masayuki Kamezawa ,  Masaya Seki ,  Ichiro Katakabe ,  Yuki Inoue

    发明人： Kaoru Yamada ,  Takayuki Saito ,  Sumio Yabe ,  Kenya Ito ,  Masayuki Kamezawa ,  Masaya Seki ,  Ichiro Katakabe ,  Yuki Inoue

    IPC分类号： H01L21/44 ,  B65G47/91

    CPC分类号： H01L21/02052 ,  B08B1/04 ,  B08B3/02 ,  B08B2203/0229 ,  B08B2203/0288 ,  C23C18/1628 ,  C25D17/001 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

    摘要： The present invention relates to a substrate processing apparatus and a substrate processing method for performing a chemical liquid process, a cleaning process, a drying process, or the like while rotating a substrate such as a semiconductor wafer or a liquid crystal substrate. The present invention also relates to a substrate holding apparatus for holding and rotating a substrate. The substrate processing apparatus (1) for processing a substrate (W) while supplying a fluid to the substrate (W) includes a substrate holder (11) for holding and rotating the substrate (W), and a holder suction unit (24) for sucking the fluid from the substrate holder (11). The substrate holding apparatus includes a plurality of rollers (20) which are brought into contact with an edge portion of a substrate (W) so as to hold and rotate the substrate (W), and at least one moving mechanism (303a) for moving the rollers (20).

    摘要翻译： 本发明涉及在旋转诸如半导体晶片或液晶基板的基板的同时进行化学液体处理，清洁处理，干燥处理等的基板处理装置和基板处理方法。 本发明还涉及用于保持和旋转衬底的衬底保持装置。 另外，在向基板（W）供给流体的同时，对基板（W）进行处理的基板处理装置（1）具备用于保持和旋转基板（W）的基板支架（11），以及用于 从基板支架（11）吸入流体。 基板保持装置包括与基板（W）的边缘部分接触以便​​保持和旋转基板（W）的多个辊（20），以及至少一个移动机构（303a），用于 移动辊子（20）。

    Substrate Processing Apparatus
    8.
    发明申请
    Substrate Processing Apparatus 有权
    基板加工装置

    公开(公告)号：US20080200100A1

    公开(公告)日：2008-08-21

    申请号：US11630512

    申请日：2006-04-18

    申请人： Tamami Takahashi ,  Mitsuhiko Shirakashi ,  Kenya Ito ,  Kazuyuki Inoue ,  Kenji Yamaguchi ,  Masaya Seki

    发明人： Tamami Takahashi ,  Mitsuhiko Shirakashi ,  Kenya Ito ,  Kazuyuki Inoue ,  Kenji Yamaguchi ,  Masaya Seki

    IPC分类号： B24B9/06 ,  H01L21/304 ,  B24B49/12

    CPC分类号： H01L21/67219 ,  B24B9/065 ,  B24B49/04 ,  H01L21/302 ,  H01L21/461 ,  H01L21/67253 ,  H01L21/68707 ,  H01L21/68728

    摘要： A substrate processing apparatus (1) includes first and second polishing units (70A, 70B) for polishing a peripheral portion of a substrate (W), a primary cleaning unit (100) for cleaning the substrate (W), a secondary cleaning and drying unit (110) for drying the substrate (W) cleaned in the primary cleaning unit (100), and a measurement unit (30) for measuring the peripheral portion of the substrate (W). The measurement unit (30) includes a mechanism for measurement required for polishing in the first and second polishing units (70A and 70B), such as a diameter measurement mechanism, a cross-sectional shape measurement mechanism, or a surface condition measurement mechanism.

    摘要翻译： 一种基板处理装置（1）包括：用于研磨基板周边部分的第一和第二研磨单元（70A，70B）;用于清洗基板（W）的主清洁单元（100），二次清洗 以及用于干燥在主清洗单元（100）中清洁的基板（W）的干燥单元（110），以及用于测量基板（W）的周边部分的测量单元（30）。 测量单元（30）包括用于在第一和第二研磨单元（70A和70B）中抛光所需的测量机构，例如直径测量机构，横截面形状测量机构或表面状态测量机构 。

    Apparatus and method for cleaning semiconductor substrate
    9.
    发明授权
    Apparatus and method for cleaning semiconductor substrate 有权
    用于清洁半导体衬底的装置和方法

    公开(公告)号：US06543080B1

    公开(公告)日：2003-04-08

    申请号：US09635848

    申请日：2000-08-11

    申请人： Hiroshi Tomita ,  Soichi Nadahara ,  Mitsuhiko Shirakashi ,  Kenya Ito ,  Yuki Inoue

    发明人： Hiroshi Tomita ,  Soichi Nadahara ,  Mitsuhiko Shirakashi ,  Kenya Ito ,  Yuki Inoue

    IPC分类号： B08B312

    CPC分类号： B08B3/12

    摘要： A semiconductor substrate cleaning apparatus and method are capable of efficiently removing contamination from both the obverse and reverse sides of a semiconductor substrate. A single cleaning liquid supply nozzle for supplying a cleaning liquid to both the obverse and reverse sides of a semiconductor substrate to be cleaned is placed at a distance from the outer peripheral edge of the substrate. An ultrasonic vibrator applies ultrasonic waves to both the obverse and reverse sides of the substrate. Four driving rollers are disposed in contact with the outer peripheral edge of the substrate. The driving rollers are adapte to rotate while being engaged with the outer peripheral edge of the substrate thereby drivingly rotating the substrate.

    摘要翻译： 半导体衬底清洁装置和方法能够有效地去除半导体衬底的正面和反面两侧的污染物。 将待清洗的半导体衬底的正面和反面两侧的清洗液供给单个清洗液供给喷嘴设置在与衬底的外周边缘一定距离处。 超声波振动器对基板的正反面施加超声波。 四个驱动辊设置成与基板的外周边缘接触。 驱动辊适于旋转，同时与基板的外周边缘接合，从而驱动旋转基板。

    Apparatus for cleaning a substrate such as a semiconductor wafer
    10.
    发明授权
    Apparatus for cleaning a substrate such as a semiconductor wafer 有权
    用于清洁诸如半导体晶片的基板的装置

    公开(公告)号：US06494220B1

    公开(公告)日：2002-12-17

    申请号：US09584091

    申请日：2000-05-31

    申请人： Naoki Matsuda ,  Kenya Ito ,  Mitsuhiko Shirakashi

    发明人： Naoki Matsuda ,  Kenya Ito ,  Mitsuhiko Shirakashi

    IPC分类号： B08B304

    CPC分类号： H01L21/67051 ,  B08B1/04 ,  B08B3/02 ,  Y10S134/902

    摘要： A cleaning apparatus comprises a holder for holding a substrate such as a semiconductor wafer horizontally and rotating the substrate about its central axis, while conducting a cleaning operation of the substrate by supplying a cleaning liquid thereto. The apparatus further comprises a cleaning vessel including a side wall encircling the substrate rotated by the holder to intercept the cleaning liquid supplied to and scattered from the rotating substrate and then finally drain the cleaning liquid. There is provided a vent duct for carrying gas from the inside of the cleaning vessel to the outside of the same. The vent duct includes an inlet provided at substantially the same level as that of the substrate for introducing the gas into the vent duct. The side wall may include an inner surface along which the cleaning liquid scattered from the substrate flows downward in a spiral manner, with the inner surface, being of a construction which impedes the spiral movement of the liquid in a circumferential or peripheral direction.

    摘要翻译： 清洁装置包括用于水平地保持诸如半导体晶片的基板并且使基板围绕其中心轴旋转的保持器，同时通过向其提供清洁液体进行清洁操作。 该装置还包括一个清洁容器，该清洁容器包括围绕由保持器旋转的基板的侧壁，以拦截供应到旋转基板并从旋转基板散射的清洗液体，然后最终排出清洗液体。 设置有用于将气体从清洁容器的内部输送到其外部的通风管道。 排气管道包括与基板基本相同的水平设置的入口，用于将气体引入通风管道。 侧壁可以包括内表面，从衬底散射的清洁液体沿着内表面以螺旋方式向下流动，内表面具有阻止液体在周向或周向上的螺旋运动的结构。