Substrate processing apparatus, substrate processing method, and substrate holding apparatus
    2.
    发明申请
    Substrate processing apparatus, substrate processing method, and substrate holding apparatus 有权
    基板处理装置,基板处理方法以及基板保持装置

    公开(公告)号:US20060234503A1

    公开(公告)日:2006-10-19

    申请号:US10564980

    申请日:2004-07-28

    IPC分类号: H01L21/44 B65G47/91

    摘要: The present invention relates to a substrate processing apparatus and a substrate processing method for performing a chemical liquid process, a cleaning process, a drying process, or the like while rotating a substrate such as a semiconductor wafer or a liquid crystal substrate. The present invention also relates to a substrate holding apparatus for holding and rotating a substrate. The substrate processing apparatus (1) for processing a substrate (W) while supplying a fluid to the substrate (W) includes a substrate holder (11) for holding and rotating the substrate (W), and a holder suction unit (24) for sucking the fluid from the substrate holder (11). The substrate holding apparatus includes a plurality of rollers (20) which are brought into contact with an edge portion of a substrate (W) so as to hold and rotate the substrate (W), and at least one moving mechanism (303a) for moving the rollers (20).

    摘要翻译: 本发明涉及在旋转诸如半导体晶片或液晶基板的基板的同时进行化学液体处理,清洁处理,干燥处理等的基板处理装置和基板处理方法。 本发明还涉及用于保持和旋转衬底的衬底保持装置。 另外,在向基板(W)供给流体的同时,对基板(W)进行处理的基板处理装置(1)具备用于保持和旋转基板(W)的基板支架(11),以及用于 从基板支架(11)吸入流体。 基板保持装置包括与基板(W)的边缘部分接触以便​​保持和旋转基板(W)的多个辊(20),以及至少一个移动机构(303a),用于 移动辊子(20)。

    Apparatus for and method of processing substrate
    4.
    发明授权
    Apparatus for and method of processing substrate 失效
    基板处理装置及其处理方法

    公开(公告)号:US07578887B2

    公开(公告)日:2009-08-25

    申请号:US10765182

    申请日:2004-01-28

    IPC分类号: B08B3/00

    CPC分类号: H01L21/67051

    摘要: An apparatus for processing a substrate through successive steps including spin-drying the substrate with a single processing facility while preventing the substrate from being contaminated by a substrate processing liquid, etc. The apparatus for processing a substrate includes a substrate holder for holding and rotating a substrate, a scattering prevention cup for circumferentially surrounding the substrate held by the substrate holder to prevent a substrate processing liquid supplied to the substrate from being scattered around, and a scattering prevention cup cleaner for cleaning an inner wall surface of the scattering prevention cup.

    摘要翻译: 一种用于通过连续步骤处理衬底的装置,包括用单一处理设备旋转衬底,同时防止衬底被衬底处理液体等污染。用于处理衬底的设备包括用于保持和旋转衬底的衬底保持器 衬底,用于周向地围绕由衬底保持器保持的衬底的防散射杯,以防止供应到衬底的衬底处理液体被散射;以及用于清洁散射防止杯的内壁表面的防散射杯清洁器。

    Substrate Processing Apparatus and Method
    6.
    发明申请
    Substrate Processing Apparatus and Method 审中-公开
    基板加工装置及方法

    公开(公告)号:US20080110861A1

    公开(公告)日:2008-05-15

    申请号:US10585482

    申请日:2005-02-23

    IPC分类号: B08B3/04 H01L21/306

    摘要: The substrate processing apparatus has substrate holding mechanisms (14) for holding the substrate (W) under a holding force which is changed according to a rotational speed of the substrate holding mechanisms (14), a substrate rotation mechanism (22) for rotating the substrate holding mechanisms (14) to rotate the substrate (W) held by the substrate holding mechanisms (14), and a treatment liquid supply mechanism (12, 15, 19) for supplying a treatment liquid to a desired portion of the substrate (W) held by the substrate holding mechanisms (14).

    摘要翻译: 基板处理装置具有基板保持机构(14),用于将基板(W)保持在根据基板保持机构(14)的旋转速度而变化的保持力,基板旋转机构(22) 用于使由基板保持机构(14)保持的基板(W)旋转的保持机构(14)和用于将处理液供给到基板(W)的期望部分的处理液供给机构(12,15,19) 由衬底保持机构(14)保持。

    Heat treatment apparatus for semiconductor wafers
    8.
    发明授权
    Heat treatment apparatus for semiconductor wafers 失效
    半导体晶片用热处理装置

    公开(公告)号:US5878191A

    公开(公告)日:1999-03-02

    申请号:US451509

    申请日:1995-05-26

    CPC分类号: H01L21/67115

    摘要: A heat treatment apparatus for semiconductor wafers includes a reaction chamber, a heater, a heat-insulating member, a first cooling gas path, a second cooling gas path, a blower and a controller. The reaction chamber houses semiconductor wafers. The heater is provided outside the reaction chamber to heat it. The heat-insulating member is provided outside the heater to keep the temperature of the reaction chamber. The first cooling gas path is interposed between the reaction chamber and heater, while the second cooling gas path is disposed between the heater and heat-insulating member. The blower allows gas to flow through the first and second gas paths to cool the reaction chamber. The controller controls the heater to increase the temperature of the reaction chamber and does the blower to decrease the temperature thereof.

    摘要翻译: 用于半导体晶片的热处理装置包括反应室,加热器,绝热构件,第一冷却气体路径,第二冷却气体路径,鼓风机和控制器。 反应室容纳半导体晶片。 加热器设置在反应室外部以加热。 隔热构件设置在加热器的外侧,以保持反应室的温度。 第一冷却气体路径介于反应室和加热器之间,而第二冷却气体路径设置在加热器和绝热构件之间。 鼓风机允许气体流过第一和第二气体通道以冷却反应室。 控制器控制加热器以增加反应室的温度,并且鼓风机降低其温度。