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公开(公告)号：US07816268B2
公开(公告)日：2010-10-19
申请号：US12714039
申请日：2010-02-26
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/76805 , H01L21/76844 , H01L21/76877 , H01L21/76886 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %.
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公开(公告)号：US08097948B2
公开(公告)日：2012-01-17
申请号：US12880520
申请日：2010-09-13
CPC分类号： H01L21/76843 , H01L21/76805 , H01L21/76844 , H01L21/76877 , H01L21/76886 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %.
摘要翻译： 为了提供一种半导体器件，其具有在铜合金布线和通孔之间的连接面上形成含有氮的阻挡金属膜的结构，其中可以防止铜合金布线和通孔之间的电阻上升， 并且可以防止电阻变化。 根据本发明的半导体器件包括第一铜合金布线，通孔和第一阻挡金属膜。 第一铜合金布线形成在层间绝缘膜中，并且在主要成分Cu中含有预定的添加元素。 通孔形成在层间绝缘膜中并与第一铜合金布线的上表面电连接。 第一阻挡金属膜形成为与第一铜合金布线和通孔之间的连接部分中的第一铜合金布线接触并且包含氮。 预定的添加元素与氮反应形成高电阻部分。 此外，预定添加元素的浓度不大于0.04重量％。
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公开(公告)号：US07700487B2
公开(公告)日：2010-04-20
申请号：US11622767
申请日：2007-01-12
CPC分类号： H01L21/76843 , H01L21/76805 , H01L21/76844 , H01L21/76877 , H01L21/76886 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %.
摘要翻译： 为了提供一种半导体器件，其具有在铜合金布线和通孔之间的连接面上形成含有氮的阻挡金属膜的结构，其中可以防止铜合金布线和通孔之间的电阻上升， 并且可以防止电阻变化。 根据本发明的半导体器件包括第一铜合金布线，通孔和第一阻挡金属膜。 第一铜合金布线形成在层间绝缘膜中，并且在主要成分Cu中含有预定的添加元素。 通孔形成在层间绝缘膜中并与第一铜合金布线的上表面电连接。 第一阻挡金属膜形成为与第一铜合金布线和通孔之间的连接部分中的第一铜合金布线接触并且包含氮。 预定的添加元素与氮反应形成高电阻部分。 此外，预定添加元素的浓度不大于0.04重量％。
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公开(公告)号：US20100327449A1
公开(公告)日：2010-12-30
申请号：US12880520
申请日：2010-09-13
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L21/76843 , H01L21/76805 , H01L21/76844 , H01L21/76877 , H01L21/76886 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %.
摘要翻译： 为了提供一种半导体器件，其具有在铜合金布线和通孔之间的连接面上形成含有氮的阻挡金属膜的结构，其中可以防止铜合金布线和通孔之间的电阻上升， 并且可以防止电阻变化。 根据本发明的半导体器件包括第一铜合金布线，通孔和第一阻挡金属膜。 第一铜合金布线形成在层间绝缘膜中，并且在主要成分Cu中含有预定的添加元素。 通孔形成在层间绝缘膜中并与第一铜合金布线的上表面电连接。 第一阻挡金属膜形成为与第一铜合金布线和通孔之间的连接部分中的第一铜合金布线接触并且包含氮。 预定的添加元素与氮反应形成高电阻部分。 此外，预定添加元素的浓度不大于0.04重量％。
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公开(公告)号：US20100151673A1
公开(公告)日：2010-06-17
申请号：US12714039
申请日：2010-02-26
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/76805 , H01L21/76844 , H01L21/76877 , H01L21/76886 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %.
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公开(公告)号：US20060103025A1
公开(公告)日：2006-05-18
申请号：US11271811
申请日：2005-11-14
IPC分类号： H01L23/52
CPC分类号： H01L23/585 , H01L23/3157 , H01L23/564 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a low dielectric constant film having a copper interconnection formed therein, a silicon oxide film arranged above the low dielectric constant film, a surface protection film arranged above the silicon oxide film, a sealing ring formed to surround a circuit forming region, and a groove portion formed outside the sealing ring when viewed two-dimensionally. The groove portion is formed such that its bottom portion is located above the low dielectric constant film and such that the bottom portion is located below an upper end of the copper interconnection.
摘要翻译： 半导体器件包括其中形成有铜互连的低介电常数膜，布置在低介电常数膜上的氧化硅膜，设置在氧化硅膜上方的表面保护膜，形成为围绕电路形成区的密封环， 以及当二维地观察时形成在密封环的外侧的槽部。 槽部形成为使其底部位于低介电常数膜的上方，并且使得底部位于铜互连的上端下方。
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7.发明授权Electrostatic capacitance type physical quantity sensor and angular velocity sensor 有权静电电容型物理量传感器和角速度传感器公开(公告)号：US08836348B2
公开(公告)日：2014-09-16
申请号：US13382395
申请日：2010-07-15
IPC分类号： G01R27/26 , G01P15/125 , G01P15/08 , G01D5/24 , G01D3/028 , G01C19/5726
CPC分类号： G01P15/125 , G01C19/5726 , G01D3/028 , G01D5/24 , G01P15/0802
摘要： The present invention provides a high-accuracy electrostatic capacitance type physical quantity sensor and angular velocity sensor configured so as to be capable of suppressing noise derived from internal noise while maintaining resistance to externally-incoming noise. A detection element 10 has a movable mass 18 supported displaceably by a physical quantity given from the outside, and a detection electrode Ef. A shield wire 16 is disposed around wirings connected to the input of a capacitance detection circuit 30 and is connected to a dc potential of low impedance. A value Cin of an input capacitance relative to a fixed potential of low impedance at a portion at which the detection element 10 is connected with the capacitance detection circuit 30 is set to fall within a range of 1.5 pF
摘要翻译： 本发明提供了一种高精度静电电容型物理量传感器和角速度传感器，其被配置为能够抑制由内部噪声产生的噪声，同时保持对外来噪声的抵抗。 检测元件10具有通过从外部给出的物理量可移动地支撑的可移动质量块18和检测电极Ef。 屏蔽线16设置在连接到电容检测电路30的输入端的布线周围，并连接到低阻抗的直流电位。 将检测元件10与电容检测电路30连接的部分处的输入电容相对于低阻抗的固定电位的值Cin设定为1.5pF
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公开(公告)号：US08813556B2
公开(公告)日：2014-08-26
申请号：US13337398
申请日：2011-12-27
IPC分类号： G01F1/68
CPC分类号： G01K13/02 , G01F1/6842 , G01F5/00 , G01F15/185 , G01K1/16 , G01K2205/02
摘要： An intake temperature sensor capable of precisely detecting the temperature of intake at high speed even in a low air mass flow zone is provided. In an intake temperature sensor having a temperature detecting element 6 inserted in an opening provided in an intake pipe 3 to be disposed in the intake pipe, a temperature detecting element is mechanically joined with a heat sink 4 directly exposed to the flow of the intake flowing in the intake pipe, and the temperature of the intake is output based on an output obtained from the temperature detecting element. Thus, the thermal resistance of the temperature detecting element with respect to the intake flow can be reduced; therefore, the intake temperature sensor capable of precisely detecting the temperature of the intake at high speed even in the low air mass flow zone can be provided.
摘要翻译： 提供了即使在低空气质量流量区域也能够高精度地检测进气温度的进气温度传感器。 在具有插入到设置在进气管3内的进气管3中的开口中的温度检测元件6的进气温度传感器中，温度检测元件与直接暴露于进气流动的散热器4机械接合 在进气管中，并且基于从温度检测元件获得的输出来输出进气温度。 因此，可以降低温度检测元件相对于进气流的热阻; 因此，即使在低空气质量流量区域中也能够高精度地检测进气温度的进气温度传感器。
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公开(公告)号：US20140159174A1
公开(公告)日：2014-06-12
申请号：US14131125
申请日：2011-07-13
IPC分类号： G01F1/34
CPC分类号： G01F1/34 , G01F1/6845 , G01F1/692 , H01L2224/48247
摘要： A flowmeter that improves a corrosion resistance is provided.The flowmeter includes a silicon substrate having a diaphragm where a heater is formed, an aluminum pad formed on a silicon substrate, an organic protective film laminated on the silicon substrate, and a mold resin that covers the silicon substrate. The diaphragm has an exposed portion exposed from the organic protective film, an adhesion surface high in adhesion property to the mold resin is laminated on the silicon substrate, and an adhesion film of the mold resin to the adhesion film is provided between the exposed portion and the aluminum pad.
摘要翻译： 提供了提高耐腐蚀性的流量计。 流量计包括具有形成有加热器的隔膜的硅基板，形成在硅基板上的铝焊盘，层叠在硅基板上的有机保护膜，以及覆盖硅基板的模制树脂。 隔膜具有从有机保护膜露出的露出部分，将与模制树脂粘附性高的粘合表面层合在硅基板上，并且将模制树脂与粘合膜的粘合膜设置在暴露部分和 铝垫。
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公开(公告)号：US08746033B2
公开(公告)日：2014-06-10
申请号：US13126615
申请日：2009-10-21
申请人： Satoshi Asano , Masahiro Matsumoto , Yasushi Okada
发明人： Satoshi Asano , Masahiro Matsumoto , Yasushi Okada
IPC分类号： G01C19/56
CPC分类号： G01C19/5614 , G01C19/5776
摘要： Failures can be detected with high accuracy even the ambient temperature changes or background vibration is applied. An angular velocity sensor is composed of a vibrator which is elastically and displaceably supported on a substrate; a driving means which vibrates the vibrator in the drive axis direction horizontal to the substrate surface; a displacement detecting means in the detection axis direction, which detects a displacement of the vibrator in the detection axis direction horizontal to the substrate surface and perpendicular to the drive axis direction; an angular velocity detecting means which detects an angular velocity based on the displacement of the vibrator in the detection axis direction; a self-vibration detecting means that detects self-vibration of the vibrator, which is generated due to leakage in the detection axis direction of the vibration of the vibrator in the drive axis direction; a self-vibration feedback circuit which completely cancels the self-vibration of the vibrator; and an abnormality determining means which determines abnormality using an output from the self-vibration detecting means.
摘要翻译： 即使环境温度变化或背景振动也可以高精度地检测到故障。 角速度传感器由弹性位移地支撑在基板上的振动器构成; 驱动装置，其使所述振动器沿所述基板面的水平方向的驱动轴方向振动; 位于检测轴方向的位移检测单元，其检测振动体在检测轴方向上与基板表面水平并垂直于驱动轴方向的位移; 角速度检测装置，其基于振动器在检测轴方向上的位移检测角速度; 自动振动检测装置，其检测由于振动器在驱动轴方向的振动的检测轴方向上的泄漏而产生的振动器的自身振动; 自振反馈电路，完全抵消振动器的自振; 以及异常确定装置，其使用来自自动振动检测装置的输出来确定异常。
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