公开(公告)号：US20110316065A1

公开(公告)日：2011-12-29

申请号：US13226224

申请日：2011-09-06

申请人： Takeshi MURATA ,  Takeshi KAMIGAICHI

发明人： Takeshi MURATA ,  Takeshi KAMIGAICHI

IPC分类号： H01L29/78

CPC分类号： H01L27/11551 ,  H01L27/11524 ,  H01L27/11556 ,  H01L29/66825 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory device includes a first stack unit with a first selection transistor and a second selection transistor formed on a semiconductor substrate and a second stack unit with first insulating layers and first conductive layers stacked alternately on the upper surface of the first stack unit. The second stack unit includes a second insulating layer formed in contact with side walls of the first insulating layer and the first conductive layer, a charge storage layer formed in contact with the second insulating layer for storing electrical charges, a third insulating layer formed in contact with the charge storage layer, and a first semiconductor layer formed in contact with the third insulating layer so as to extend in a stacking direction, with one end connected to one diffusion layer of the first selection transistor and the other end connected to a diffusion layer of the second selection transistor.

摘要翻译： 非易失性半导体存储器件包括具有第一选择晶体管的第一堆叠单元和形成在半导体衬底上的第二选择晶体管和具有第一绝缘层的第二堆叠单元和在第一堆叠单元的上表面上交替堆叠的第一导电层。 第二堆叠单元包括与第一绝缘层和第一导电层的侧壁接触形成的第二绝缘层，与用于存储电荷的第二绝缘层接触形成的电荷存储层，形成为接触的第三绝缘层 与电荷存储层形成的第一半导体层以及与第三绝缘层接触形成的层叠方向延伸的第一半导体层，一端与第一选择晶体管的一个扩散层连接，另一端与扩散层连接 的第二选择晶体管。

公开(公告)号：US20100065900A1

公开(公告)日：2010-03-18

申请号：US12560783

申请日：2009-09-16

申请人： Takeshi MURATA ,  Takeshi Kamigaichi ,  Itaru Kawabata ,  Shinya Takahashi

发明人： Takeshi MURATA ,  Takeshi Kamigaichi ,  Itaru Kawabata ,  Shinya Takahashi

IPC分类号： H01L29/8605 ,  H01L29/792 ,  H01L23/48

CPC分类号： H01L28/20 ,  H01L27/0629 ,  H01L27/11526 ,  H01L27/11529

摘要： A semiconductor device includes a resistance element. The resistance element includes a first and second conductive films, second insulating film, and contact plugs. The first conductive film is formed on a semiconductor substrate with a first insulating film interposed therebetween. The second insulating film is formed on the first conductive film. The second conductive film is formed on the second insulating film. In the first connection portion, the second insulating film is removed. The first connection portion connects the first conductive film and the second conductive film together. The contact plugs are formed on the second conductive film. The contact plugs are arranged such that a region located on the second conductive film and immediately above the connection portion is sandwiched between the contact plugs.

摘要翻译： 半导体器件包括电阻元件。 电阻元件包括第一和第二导电膜，第二绝缘膜和接触插塞。 第一导电膜形成在半导体衬底上，其间插入有第一绝缘膜。 第二绝缘膜形成在第一导电膜上。 第二导电膜形成在第二绝缘膜上。 在第一连接部分中，去除第二绝缘膜。 第一连接部分将第一导电膜和第二导电膜连接在一起。 接触插塞形成在第二导电膜上。 接触插塞被布置成使得位于第二导电膜上并紧邻连接部分的区域夹在接触插塞之间。

公开(公告)号：US20100155813A1

公开(公告)日：2010-06-24

申请号：US12646009

申请日：2009-12-23

申请人： Takeshi MURATA ,  Hiroyuki NITTA

发明人： Takeshi MURATA ,  Hiroyuki NITTA

IPC分类号： H01L27/115 ,  H01L21/8247

CPC分类号： H01L27/11521 ,  H01L27/11526 ,  H01L27/11529

摘要： A semiconductor memory device includes select transistors, cell transistors, and cell units. The select transistors formed on a substrate and include first electrodes. The cell transistors include second electrodes with a charge storage layer and a control. The cell units including a plurality of the cell transistors connected together in series between the two select transistors. A distance between the first electrodes and a distance between the first electrodes which is adjacent to the second electrodes and adjacent second electrodes are each at least double a distance between second electrodes. A surface of the substrate between second electrodes is flush with the surface of the substrate between the first electrode and the adjacent second electrodes. The surface of the substrate between the first electrodes is positioned lower than the surface of the substrate between the first electrodes and the second electrodes.

摘要翻译： 半导体存储器件包括选择晶体管，单元晶体管和单元单元。 形成在基板上的选择晶体管包括第一电极。 电池晶体管包括具有电荷存储层和控制的第二电极。 单元单元包括串联连接在两个选择晶体管之间的多个单元晶体管。 第一电极之间的距离和与第二电极和相邻的第二电极相邻的第一电极之间的距离分别为第二电极之间的距离的至少两倍。 第二电极之间的基板的表面与第一电极和相邻的第二电极之间的基板的表面齐平。 第一电极之间的衬底表面位于比第一电极和第二电极之间的衬底表面更低的位置。

公开(公告)号：US20120126708A1

公开(公告)日：2012-05-24

申请号：US13290163

申请日：2011-11-07

申请人： Takeshi MURATA ,  Atsushi Kanamori ,  Hirohisa Warita ,  Hideo Matsuda ,  Takayuki Shimizu

发明人： Takeshi MURATA ,  Atsushi Kanamori ,  Hirohisa Warita ,  Hideo Matsuda ,  Takayuki Shimizu

IPC分类号： H05B37/02

CPC分类号： H05B33/0815

摘要： An LED drive circuit that is connectable to a phase control type of light adjuster and receives a voltage based on an a.c. voltage to drive an LED load, the LED drive circuit has a structure which includes: an adjustment signal generation portion that generates an adjustment signal in accordance with a characteristic of a phase control type of light adjuster which is connected to the LED drive circuit; and an adjustment portion that receives the adjustment signal to adjust a characteristic for driving the LED load.

摘要翻译： 一种LED驱动电路，其可连接到相位控制类型的光调节器，并接收基于交流电压的电压。 电压驱动LED负载，所述LED驱动电路具有如下结构，所述结构包括：调整信号生成部，其根据与所述LED驱动电路连接的相位控制型光调整器的特性生成调整信号; 以及调节部，其接收所述调整信号，以调整用于驱动所述LED负载的特性。

公开(公告)号：US20120025386A1

公开(公告)日：2012-02-02

申请号：US13070963

申请日：2011-03-24

申请人： Takeshi MURATA

发明人： Takeshi MURATA

IPC分类号： H01L29/43 ,  H01L21/283 ,  H01L23/48

CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/147 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device according to an embodiment includes a cell array block having a plurality of cell arrays stacked therein, each of the cell arrays including a plurality of memory cells and a plurality of selective wirings selecting the plurality of memory cells are stacked, a pillar-shaped first via extending in a stack direction from a first height to a second height and having side surfaces connected to a first wiring, and a pillar-shaped second via extending in the stack direction from the first height to the second height and having side surfaces connected to a second wiring upper than the first wiring, the second wiring being thicker in the stack direction than the first wiring and having a higher resistivity than the first wiring.

摘要翻译： 根据实施例的半导体存储器件包括具有堆叠在其中的多个单元阵列的单元阵列块，每个单元阵列包括多个存储单元和选择多个存储单元的多个选择布线，一个柱 首先通过从堆叠方向从第一高度延伸到第二高度并且具有连接到第一布线的侧表面，以及沿堆叠方向从第一高度延伸到第二高度的柱状第二通孔，并且具有侧面 与第一配线上方的第二配线连接的面，第二配线比第一配线在堆叠方向厚，比第一布线的电阻率高。

公开(公告)号：US20110038194A1

公开(公告)日：2011-02-17

申请号：US12855151

申请日：2010-08-12

申请人： Takeshi MURATA ,  Yutaka Ishibashi ,  Hiroyuki Nitta

发明人： Takeshi MURATA ,  Yutaka Ishibashi ,  Hiroyuki Nitta

IPC分类号： G11C5/06 ,  G11C11/00

CPC分类号： G11C5/063 ,  G11C11/22 ,  G11C13/0007 ,  G11C17/16 ,  G11C17/165 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/101 ,  H01L27/1021

摘要： According to one embodiment, a semiconductor storage device includes a plurality of parallel first interconnects extending in a first direction, a plurality of parallel second interconnects which extend in a second direction perpendicular to the first direction and which make a two-level crossing with respect to the first interconnects, and memory cell structures provided in regions where the first interconnects and the second interconnects make two-level crossings, the memory cell structures being connected on one end to the first interconnects and connected on the other end to the second interconnects, the memory cell structure including a variable resistive element and a non-ohmic element which are connected in series, wherein the endmost first interconnect is disconnected in at least one portion.

摘要翻译： 根据一个实施例，半导体存储装置包括在第一方向上延伸的多个平行的第一互连件，多个平行的第二互连件，其沿与第一方向垂直的第二方向延伸，并且相对于 所述第一互连和存储单元结构设置在所述第一互连和所述第二互连构成两级交叉的区域中，所述存储单元结构的一端连接到所述第一互连并在另一端连接到所述第二互连， 存储单元结构包括串联连接的可变电阻元件和非欧姆元件，其中最末端的第一互连件在至少一部分中断开。

公开(公告)号：US20080237997A1

公开(公告)日：2008-10-02

申请号：US12057589

申请日：2008-03-28

申请人： Takeshi MURATA ,  Manabu Yasuda ,  Satoshi Tanaka

发明人： Takeshi MURATA ,  Manabu Yasuda ,  Satoshi Tanaka

IPC分类号： F02F11/00

CPC分类号： F16J15/0825 ,  F16J2015/0862

摘要： The present invention provides a metal gasket to be fitted between a cylinder head and a cylinder block to seal a gap between the surfaces thereof, which comprises: a thin metal plate with an opening formed at a position corresponding to a bore portion of the cylinder block, the opening having a diameter larger than that of the bore portion; and a pair of elastic metal substrates each having: an opening which substantially agrees with the bore portion of the cylinder block; an annular convex portion formed concentrically with the opening at a position apart from an edge portion of the opening by a specified distance; and an annular holding portion for holding a peripheral portion of the opening of the thin metal plate, horizontally extending out from an outer edge portion of the convex portion, wherein the pair of the elastic metal substrates are disposed so that top portions of the respective convex portions face each other and that the holding portions overlap with the thin metal plate, and engaged to the thin metal plate at a plurality of positions.

摘要翻译： 本发明提供一种金属垫片，其装配在气缸盖和气缸体之间以密封其表面之间的间隙，该金属垫片包括：薄金属板，其具有形成在对应于气缸体的孔部分的位置处的开口 所述开口的直径大于所述孔部的直径; 以及一对弹性金属基板，每个都具有：基本上与气缸体的孔部分一致的开口; 在与开口的边缘部分隔开指定距离的位置处与所述开口同心地形成的环形凸部; 以及环状保持部，其保持从所述凸部的外缘部水平延伸的所述薄金属板的开口的周缘部，其中，所述一对所述弹性金属基板被配置为使得所述各个凸部 所述保持部与所述薄金属板重叠，并且在多个位置与所述薄金属板接合。