摘要:
In a surface acoustic wave device using a Shear Horizontal type surface acoustic wave, at least one interdigital transducer (IDT) is made of a material having a larger mass-load effect than that of aluminum. The metallization ratio of the IDT and the normalization film thickness h/&lgr; of the IDT are controlled such that ripple caused by a transversal mode wave is about 0.5 dB or less, where “h” indicates the film thickness of the electrodes and “&lgr;” indicates the wavelength of a surface acoustic wave.
摘要:
In a method of manufacturing a surface acoustic wave device using a Shear Horizontal type surface acoustic wave, at least one interdigital transducer (IDT) is made of a material having a larger mass-load effect than that of aluminum. The metallization ratio of the IDT and the normalization film thickness h/λ of the IDT are controlled such that ripple caused by a transversal mode wave is about 1.5 dB or less, where “h” indicates the film thickness of the electrodes and “h” indicates the wavelength of a surface acoustic wave.
摘要:
A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer disposed on the piezoelectric substrate and made of a metal or an alloy having a higher specific weight than that of the piezoelectric material of the piezoelectric substrate so as to generate shear horizontal waves. The interdigital transducer includes a plurality of electrode fingers. A ratio of the electrode finger width relative to the electrode finger width plus the space between adjacent electrode fingers is about 0.55 to about 0.85.
摘要:
A surface acoustic wave device includes a quartz substrate having an angle .theta. of Euler angles (0, .theta., 90.degree.) that satisfies 122.degree..ltoreq..theta..ltoreq.131.degree.. An interdigital transducer made of an electrode material including at least one of Ta and W is disposed on the quartz substrate.
摘要:
A surface acoustic wave device includes a quartz substrate having Euler angles (0°, &thgr;, 90°±5°) in which &thgr; is in a range of 119°≦&thgr;≦140°, and an IDT for exciting an SH wave is formed on the quartz substrate by use of an electrode material containing as a major component at least one of Ag, Mo, Cu, Ni, Cr, and Zn and having a density of at least about 7 g/cm3. The film thickness of the IDT is such that the attenuation constant is approximately zero.
摘要翻译:表面声波装置包括具有欧拉角(0,θ,90 5)的石英基板,其中θ在119 <θ= 140的范围内,并且在石英基板上形成用于激发SH波的IDT 通过使用包含Ag,Mo,Cu,Ni,Cr和Zn中的至少一种作为主要成分并具有至少约7g / cm 3的密度的电极材料。 IDT的膜厚度使得衰减常数近似为零
摘要:
A surface acoustic wave device includes a piezoelectric plate and at least one interdigital electrode provided on the piezoelectric plate. The interdigital electrode includes a first metallic thin film and a second metallic thin film laminated on the first metallic thin film and containing tantalum as a principal component, and at least a portion of the tantalum of the second metallic thin film is &agr;-tantalum.
摘要:
A method of manufacturing a surface acoustic wave device having a piezoelectric substrate and an interdigital transducer provided thereon, includes the steps of forming a coating layer made of inorganic material or organic material on the piezoelectric substrate so as to cover the interdigital transducer and etching the coating layer via a laser light to adjust an operation frequency of the surface acoustic wave device.
摘要:
A surface acoustic wave device includes a piezoelectric plate and at least one interdigital electrode provided on the piezoelectric plate. The interdigital electrode includes a first metallic thin film and a second metallic thin film laminated on the first metallic thin film and containing tantalum as a principal component, and at least a portion of the tantalum of the second metallic thin film is &agr;-tantalum.
摘要:
A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer disposed thereon. The surface acoustic wave resonator operates using a shear horizontal wave, and the interdigital transducer includes an electrode film made of a metal containing W or Ta as its main component and a thin film made of Al.
摘要:
A surface acoustic wave device includes a surface acoustic wave element housed in a main body of a package. The surface acoustic wave element is electrically connected to electrode lands of the package via bonding wires, and the bonding wires are arranged so as not to pass over both of IDTs and reflectors of the surface acoustic wave device.