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    Surface acoustic wave resonator, surface acoustic wave device, and communication device using shear horizontal waves
    3.
    发明授权
    Surface acoustic wave resonator, surface acoustic wave device, and communication device using shear horizontal waves 有权
    表面声波谐振器，表面声波装置和使用剪切水平波的通信装置

    公开(公告)号：US06437668B1

    公开(公告)日：2002-08-20

    申请号：US09557805

    申请日：2000-04-25

    申请人： Takeshi Nakao ,  Toshimaro Yoneda ,  Koji Fujimoto ,  Michio Kadota

    发明人： Takeshi Nakao ,  Toshimaro Yoneda ,  Koji Fujimoto ,  Michio Kadota

    IPC分类号： H03H925

    CPC分类号： H03H9/25

    摘要： A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer disposed on the piezoelectric substrate and made of a metal or an alloy having a higher specific weight than that of the piezoelectric material of the piezoelectric substrate so as to generate shear horizontal waves. The interdigital transducer includes a plurality of electrode fingers. A ratio of the electrode finger width relative to the electrode finger width plus the space between adjacent electrode fingers is about 0.55 to about 0.85.

    摘要翻译： 弹性表面波谐振器包括压电基片和配置在压电基片上并由与压电基片的压电材料相比具有更高比重的金属或合金制成的叉指换能器，以产生剪切水平波。 叉指换能器包括多个电极指。 电极指宽度相对于电极指宽度加上相邻电极指之间的空间的比率为约0.55至约0.85。

    Surface acoustic wave device and electronic device using the same
    8.
    发明授权
    Surface acoustic wave device and electronic device using the same 有权
    声表面波装置及使用其的电子装置

    公开(公告)号：US07009468B2

    公开(公告)日：2006-03-07

    申请号：US10132281

    申请日：2002-04-26

    申请人： Michio Kadota ,  Koji Fujimoto ,  Takeshi Nakao

    发明人： Michio Kadota ,  Koji Fujimoto ,  Takeshi Nakao

    IPC分类号： H03H9/64

    CPC分类号： H03H9/02637 ,  H03H9/02551 ,  H03H9/6436 ,  H03H9/6463 ,  H03H9/6483

    摘要： A small, high-performance SAW device has a large electromechanical coupling coefficient and a small number of fingers constituting reflectors, and is constructed such that losses due to electric resistance of the fingers. In the SAW device having pluralities of first fingers and second fingers, disposed on a quartz substrate, constituting an IDT for exciting SH waves and reflectors for reflecting the SH waves, respectively, the first and second fingers made mainly from Au are disposed on the ST-cut 90° X-propagation quartz substrate with the Euler angles (0°, θ, 90°±2°), wherein the angle θ is within the range of about 110° to about 150° and a normalized film thickness (H/λ) of the fingers is within the range of about 0.003 to about 0.095.

    摘要翻译： 小型高性能SAW器件具有大的机电耦合系数和少数构成反射器的指状物，并且被构造成使得由于手指的电阻而引起的损失。 在具有多个第一指状物和第二指状物的SAW器件中，分别配置在石英衬底上，构成用于激发SH波的IDT和用于反射SH波的反射器，主要由Au形成的第一和第二指状物设置在ST （0°，θ，90°±2°）的切割的90°X传播石英衬底，其中角度θ在约110°至约150°的范围内，标准化膜厚度（H / 指数的范围在约0.003至约0.095的范围内。

    Surface acoustic wave device
    9.
    发明授权
    Surface acoustic wave device 有权
    表面声波装置

    公开(公告)号：US06911881B2

    公开(公告)日：2005-06-28

    申请号：US10460299

    申请日：2003-06-13

    申请人： Daisuke Tamazaki ,  Takeshi Nakao ,  Toshimaro Yoneda

    发明人： Daisuke Tamazaki ,  Takeshi Nakao ,  Toshimaro Yoneda

    IPC分类号： H03H9/25 ,  H03H9/00 ,  H03H9/02 ,  H03H9/145 ,  H03H9/64

    CPC分类号： H03H9/0028 ,  H03H9/02889 ,  H03H9/02905 ,  H03H9/6459

    摘要： A surface acoustic wave device has first and second surface acoustic wave filter elements which are arranged on a surface acoustic wave substrate so as to define a filter device having a two-stage configuration. A free surface portion is provided by forming a perforation in an inter-stage connecting portion connecting the first and second surface acoustic wave filter elements.

    摘要翻译： 表面声波装置具有布置在表面声波基板上的第一和第二表面声波滤波器元件，以限定具有两级结构的滤波器装置。 通过在连接第一和第二表面声波滤波器元件的级间连接部分中形成穿孔来提供自由表面部分。

    Method for fabricating acoustic wave device
    10.
    发明授权
    Method for fabricating acoustic wave device 有权
    制造声波装置的方法

    公开(公告)号：US08677582B2

    公开(公告)日：2014-03-25

    申请号：US12706051

    申请日：2010-02-16

    申请人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

    发明人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

    IPC分类号： H03H3/04

    CPC分类号： H03H9/02834 ,  H03H3/10 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49165

    摘要： A method for fabricating an acoustic wave device includes the steps of forming an insulating material layer on a piezoelectric substrate, forming a patterned photoresist on the insulating material layer, patterning the insulating material layer, and forming a piezoelectric-substrate exposed depression corresponding to a region where an interdigital transducer electrode is to be formed on a first insulator layer composed of the insulating material layer, depositing a metallic material on the piezoelectric substrate to form the interdigital transducer electrode in the piezoelectric-substrate exposed depression such that the overall interdigital transducer electrode is thinner than the first insulator layer and coating the photoresist with a metallic material, removing the photoresist and the metallic material on the photoresist, and depositing a second insulator layer so as to cover the interdigital transducer electrode and the first insulator layer.

    摘要翻译： 一种制造声波器件的方法包括以下步骤：在压电衬底上形成绝缘材料层，在绝缘材料层上形成图案化的光致抗蚀剂，图案化绝缘材料层，形成压电衬底暴露的与区域相对应的凹陷 其中在由绝缘材料层构成的第一绝缘体层上形成叉指式换能器电极，在压电基板上沉积金属材料，以在压电基板暴露的凹陷中形成叉指式换能器电极，使得整个叉指式换能器电极为 比第一绝缘体层薄，并用金属材料涂覆光致抗蚀剂，去除光致抗蚀剂上的光致抗蚀剂和金属材料，并沉积第二绝缘体层以覆盖叉指式换能器电极和第一绝缘体层。