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10 条记录 (耗时 0.016 秒)

    MANUFACTURING METHOD FOR PROBE CONTACT
    1.
    发明申请
    MANUFACTURING METHOD FOR PROBE CONTACT 失效
    探针接触的制造方法

    公开(公告)号：US20100050431A1

    公开(公告)日：2010-03-04

    申请号：US12516155

    申请日：2008-09-02

    申请人： Takeyuki Suzuki ,  Ryo Ujike ,  Yoshinori Wakabayashi

    发明人： Takeyuki Suzuki ,  Ryo Ujike ,  Yoshinori Wakabayashi

    IPC分类号： H01R43/16

    CPC分类号： G01R3/00 ,  G01R1/06716 ,  Y10T29/49121 ,  Y10T29/49204 ,  Y10T29/49218 ,  Y10T29/4979

    摘要： To make the fracturing position controlled conveniently with high precision when the substrate end of the probe contact is fractured and cut off.By compressing the front face of the substrate end portion with the pushing member, brittle fracture is generated on the substrate along the carved groove, and the substrate end portion is cut off from the substrate. The fracturing position in the above-mentioned fracturing is controlled so as to be along the fracturing position whose extension puts thereon the stress concentrating ends of two fracturing control structures. Here, the fracturing control structure is located with high positional precision on the front face of the substrate through the alignment technique of photolithography. In this way, resilient armatures constituted of the tips projected from the fracturing position coming to be the end of the substrate 11a can be stably formed with high precision.

    摘要翻译： 当探头接触的基板端部断裂并切断时，使压裂位置以高精度方便地进行控制。 通过用推动部件压缩基板端部的前表面，沿着雕刻槽在基板上产生脆性断裂，并且将基板端部与基板切断。 上述断裂中的断裂位置被控制为沿着断裂位置，其延伸部将两个压裂控制结构的应力集中端部置于其上。 这里，压裂控制结构通过光刻的对准技术在基板的正面上位置精度高。 以这种方式，可以以高精度稳定地形成由从作为基板11a的端部的压裂位置突出的端部构成的弹性电枢。

    Manufacturing method for probe contact
    2.
    发明授权
    Manufacturing method for probe contact 失效
    探针接触的制造方法

    公开(公告)号：US08312626B2

    公开(公告)日：2012-11-20

    申请号：US12516155

    申请日：2008-09-02

    申请人： Takeyuki Suzuki ,  Ryo Ujike ,  Yoshinori Wakabayashi

    发明人： Takeyuki Suzuki ,  Ryo Ujike ,  Yoshinori Wakabayashi

    IPC分类号： H01R43/04

    CPC分类号： G01R3/00 ,  G01R1/06716 ,  Y10T29/49121 ,  Y10T29/49204 ,  Y10T29/49218 ,  Y10T29/4979

    摘要： To make the fracturing position controlled conveniently with high precision when the substrate end of the probe contact is fractured and cut off.By compressing the front face of the substrate end portion with the pushing member, brittle fracture is generated on the substrate along the carved groove, and the substrate end portion is cut off from the substrate. The fracturing position in the above-mentioned fracturing is controlled so as to be along the fracturing position whose extension puts thereon the stress concentrating ends of two fracturing control structures. Here, the fracturing control structure is located with high positional precision on the front face of the substrate through the alignment technique of photolithography. In this way, resilient armatures constituted of the tips projected from the fracturing position coming to be the end of the substrate 11a can be stably formed with high precision.

    摘要翻译： 当探头接触的基板端部断裂并切断时，使压裂位置以高精度方便地进行控制。 通过用推动部件压缩基板端部的前表面，沿着雕刻槽在基板上产生脆性断裂，并且将基板端部与基板切断。 上述断裂中的断裂位置被控制为沿着断裂位置，其延伸部将两个压裂控制结构的应力集中端部置于其上。 这里，压裂控制结构通过光刻的对准技术在基板的正面上位置精度高。 以这种方式，可以以高精度稳定地形成由从作为基板11a的端部的压裂位置突出的端部构成的弹性电枢。

    Recovery processing method of an electrode
    9.
    发明授权
    Recovery processing method of an electrode 失效
    电极的回收处理方法

    公开(公告)号：US06905952B2

    公开(公告)日：2005-06-14

    申请号：US10443813

    申请日：2003-05-23

    申请人： Takeyuki Suzuki ,  Yoshinori Wakabayashi

    发明人： Takeyuki Suzuki ,  Yoshinori Wakabayashi

    IPC分类号： G01R1/073 ,  H01L21/48 ,  H01L21/60 ,  H05K3/22 ,  H05K3/40 ,  H01L21/44

    CPC分类号： H01L21/4846 ,  H01L2924/0002 ,  H05K3/225 ,  H05K3/4007 ,  H01L2924/00

    摘要： While a transfer surface 10a of a transfer plate 10 having a predetermined surface roughness is brought into contact with a plurality of bumps 44B on a contact sheet 44 formed on a substrate 44M having the coefficient of linear expansion larger than that of the transfer plate 10 at a predetermined pressure, the substrate 44M and the transfer plate 10 are heated to a predetermined temperature to recover the surface roughness of the bump 44B to a predetermined value.

    摘要翻译： 虽然具有预定表面粗糙度的转印板10的转印表面10a与形成在基板44M上的接触片44上的多个凸起44B接触，该基片44 M的线膨胀系数大于转印系数 板10在预定压力下，将衬底44M和转印板10加热到预定温度，以将凸块44B的表面粗糙度恢复到预定值。