公开(公告)号：US06794805B1

公开(公告)日：2004-09-21

申请号：US09382956

申请日：1999-08-25

申请人： Takashi Hatai ,  Takuya Komoda ,  Yoshiaki Honda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Tsutomu Ichihara ,  Yukihiro Kondo ,  Naomasa Oka ,  Nobuyoshi Koshida

发明人： Takashi Hatai ,  Takuya Komoda ,  Yoshiaki Honda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Tsutomu Ichihara ,  Yukihiro Kondo ,  Naomasa Oka ,  Nobuyoshi Koshida

IPC分类号： H01J130

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J31/127 ,  H01J2201/3125

摘要： An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source 10 comprises an electrically conductive substrate of p-type silicon substrate 1; n-type regions 8 of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers 6 formed on the n-type regions 8 which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region 8; poly-silicon layers 3 between the strong field drift layers 6; surface electrodes 7 of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer 6 and the poly-silicon layers 3. By selecting a pair of the n-type regions 8 and the surface electrodes 7 and thereby making electron emitted from the crossing points due to combination of the surface electrode 7 to be electrically applied and the n-type region 8 to be electrically applied, electrons can be discharged from desired regions of the surface electrodes 7.

摘要翻译： 场发射电子源的阵列和制备阵列的方法，其从场致发射电子源的表面电极的期望区域放电。 场发射电子源10包括p型硅衬底1的导电衬底; 在p型硅衬底的一个主表面上的扩散层条纹的n型区域8，形成在由氧化的多孔多晶硅制成的n型区域8上的强电场漂移层6，用于漂移电子注入 从n型区域8; 强场漂移层6之间的多晶硅层3; 薄导电薄膜条的表面电极7以与强场漂移层6和多晶硅层3的条纹交叉的方式形成。通过选择一对n型区域8和表面电极7 从而由于要被施加的表面电极7的组合和被施加的n型区域8而使从交叉点发射的电子能够从表面电极7的期望的区域排出电子。

公开(公告)号：US06498426B1

公开(公告)日：2002-12-24

申请号：US09557916

申请日：2000-04-21

申请人： Yoshifumi Watabe ,  Yukihiro Kondo ,  Koichi Aizawa ,  Takuya Komoda ,  Yoshiaki Honda ,  Takashi Hatai ,  Tsutomu Ichihara ,  Nobuyoshi Koshida

发明人： Yoshifumi Watabe ,  Yukihiro Kondo ,  Koichi Aizawa ,  Takuya Komoda ,  Yoshiaki Honda ,  Takashi Hatai ,  Tsutomu Ichihara ,  Nobuyoshi Koshida

IPC分类号： H01J100

CPC分类号： B82Y10/00 ,  H01J1/304 ,  H01J1/312 ,  H01J9/025

摘要： A field emission-type electron source (10) is provided with a conductive substrate (1), a semiconductor layer formed on a surface of the conductive substrate (1), at least a part of the semiconductor layer being made porous, and a conductive thin film (7) formed on the semiconductor layer. Electrons injected into the conductive substrate (1) are emitted from the conductive thin film (7) through the semiconductor layer by applying a voltage between the conductive thin film (7) and the conductive substrate (1) in such a manner that the conductive thin film (7) acts as a positive electrode against the conductive substrate (1). The semiconductor layer includes a porous semiconductor layer (6) in which columnar structures (21) and porous structures (25) composed of fine semiconductor crystals of nanometer scale coexist, a surface of each of the structures being covered with an insulating film (22,24). Further, an average dimension of each of the porous structures (25) in a thickness direction of the semiconductor layer is smaller than or equal to 2 &mgr;m.

摘要翻译： 场发射型电子源（10）设置有导电基板（1），形成在导电基板（1）的表面上的半导体层，半导体层的至少一部分被制成多孔的导电基板 形成在半导体层上的薄膜（7）。 通过在导电薄膜（7）和导电性基板（1）之间施加电压，使导电性薄膜（7）的导电性薄膜（7）通过半导体层从导电性薄膜（7）射出， 膜（7）用作抵靠导电基板（1）的正电极。 半导体层包括多孔半导体层（6），其中由纳米级微细半导体晶体构成的柱状结构（21）和多孔结构（25）共存，每个结构的表面被绝缘膜（22， 24）。 此外，半导体层的厚度方向上的多孔结构体（25）的平均尺寸小于或等于2μm。

公开(公告)号：US06791248B2

公开(公告)日：2004-09-14

申请号：US10438070

申请日：2003-05-15

申请人： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Nobuyoshi Koshida

发明人： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Nobuyoshi Koshida

IPC分类号： H01J1312

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J9/025 ,  H01J2201/3125 ,  Y10S977/939

摘要： There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.

摘要翻译： 以低成本提供了以高稳定性和高效率发射电子的场致发射电子源及其制造方法。 在场发射电子源中，在其主表面上的n型硅衬底上形成强电场漂移部分106，并且在强电场漂移部分106上形成由金薄膜制成的表面电极107。 并且欧姆电极2形成在n型硅衬底101的背面上。在该场发射电子源110中，当表面电极107设置在真空中并且向表面电极107施加直流电压时 相对于n型硅衬底101（欧姆电极2）具有正极性，从n型硅衬底101注入的电子在强电场漂移部106中漂移，并通过表面电极107发射。 强电场漂移部106包括漂移区域161，该漂移区域161在与n型硅衬底1的厚度方向成直角的网状结构中具有横截面， 以及散热区域162，其被填充在网孔的空隙中，并且具有比漂移区域161高的导热性。

公开(公告)号：US06590321B1

公开(公告)日：2003-07-08

申请号：US09404656

申请日：1999-09-24

申请人： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Nobuyoshi Koshida

发明人： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Nobuyoshi Koshida

IPC分类号： H01J1312

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J9/025 ,  H01J2201/3125 ,  Y10S977/939

摘要： In a field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids ox the mesh and has a heat conduction higher than that of the drift region 161.

摘要翻译： 在场发射电子源中，在其主表面上的n型硅衬底上形成强电场漂移部分106，并且在强电场漂移部分106上形成由金薄膜制成的表面电极107。 并且欧姆电极2形成在n型硅衬底101的背面上。在该场发射电子源110中，当表面电极107设置在真空中并且向表面电极107施加直流电压时 相对于n型硅衬底101（欧姆电极2）具有正极性，从n型硅衬底101注入的电子在强电场漂移部106中漂移，并通过表面电极107发射。 强电场漂移部分106包括漂移区域161，该漂移区域161在与n型硅衬底1的厚度方向成直角的网状结构中具有横截面，该电极是电c 以及散热区域162，其被填充在空隙中，并且具有比漂移区域161高的导热性。

公开(公告)号：US06285118B1

公开(公告)日：2001-09-04

申请号：US09440166

申请日：1999-11-15

申请人： Takashi Hatai ,  Takuya Komoda ,  Yoshiaki Honda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Tsutomu Ichihara ,  Yukihiro Kondo ,  Nobuyoshi Koshida

发明人： Takashi Hatai ,  Takuya Komoda ,  Yoshiaki Honda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Tsutomu Ichihara ,  Yukihiro Kondo ,  Nobuyoshi Koshida

IPC分类号： H01J902

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J9/025

摘要： A field emission type electron source 10 is provided with an n-type silicon substrate 1, a strong field drift layer 6 formed on the n-type silicon substrate 1 directly or inserting a polycrystalline silicon layer 3 therebetween, and an electrically conductive thin film 7, which is a thin gold film, formed on the strong field drift layer 6. Further, an ohmic electrode 2 is provided on the back surface of the n-type silicon substrate 1. Hereupon, electrons, which are injected from the n-type silicon substrate 1 into the strong field drift layer 6, drift in the strong field drift layer 6 toward the surface of the layer, and then pass through the electrically conductive thin film 7 to be emitted outward. The strong field drift layer 6 is formed by making the polycrystalline silicon 3 formed on the n-type silicon substrate 1 porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.

摘要翻译： 场发射型电子源10设置有n型硅衬底1，直接形成在n型硅衬底1上或在其间插入多晶硅层3的强场漂移层6和导电薄膜7 ，其是形成在强场漂移层6上的薄金膜。此外，在n型硅衬底1的背面上设置欧姆电极2.因此，从n型衬底1注入的电子 硅衬底1进入强场漂移层6，在强场漂移层6中向层的表面漂移，然后通过导电薄膜7向外发射。 通过使形成在n型硅衬底1上的多晶硅3通过阳极氧化多孔，并且使用稀硝酸等进一步氧化，形成强场漂移层6。

公开(公告)号：US06753196B2

公开(公告)日：2004-06-22

申请号：US10178409

申请日：2002-06-25

申请人： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Yoshiaki Honda ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba

发明人： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Yoshiaki Honda ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba

IPC分类号： H01L2100

CPC分类号： B82Y10/00 ,  H01J9/025

摘要： An electron source 10 has an n-type silicon substrate 1, a drift layer 6 formed on one surface of the substrate 1, and a surface electrode 7 formed on the drift layer 6. A voltage is applied so that the surface electrode 7 becomes positive in polarity relevant to the substrate 1, whereby electrons injected from the substrate 1 into the drift layer 6 drift within the drift layer 6, and are emitted through the surface electrode 7. In a process for manufacturing this electron source 10, when the drift layer 6 is formed, a porous semiconductor layer containing a semiconductor nanocrystal is formed in accordance with anodic oxidation. Then, an insulating film is formed on the surface of each semiconductor nanocrystal. Anodic oxidation is carried out while emitting light that essentially contains a wavelength in a visible light region relevant to the semiconductor layer.

摘要翻译： 电子源10具有n型硅衬底1，形成在衬底1的一个表面上的漂移层6和形成在漂移层6上的表面电极7.施加电压使得表面电极7变为正 与衬底1相关的极性，由此从衬底1注入漂移层6的电子在漂移层6内漂移，并通过表面电极7发射。在制造该电子源10的过程中，当漂移层 如图6所示，根据阳极氧化形成含有半导体纳米晶体的多孔半导体层。 然后，在每个半导体纳米晶体的表面上形成绝缘膜。 在发射基本上包含与半导体层相关的可见光区域中的波长的光的同时进行阳极氧化。

公开(公告)号：US07898160B2

公开(公告)日：2011-03-01

申请号：US10572748

申请日：2004-11-25

申请人： Koichi Aizawa ,  Tsutomu Ichihara ,  Takuya Komoda ,  Jyunji Ikeda ,  Toru Baba

发明人： Koichi Aizawa ,  Tsutomu Ichihara ,  Takuya Komoda ,  Jyunji Ikeda ,  Toru Baba

IPC分类号： H01J9/02

CPC分类号： G21K5/04 ,  B82Y10/00 ,  H01J1/308 ,  H01J1/312 ,  H01J37/073 ,  H01J37/30

摘要： Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes.

摘要翻译： 提供了用电子修饰物体的装置和方法，通过该装置和方法，即使具有相对较宽的待处理表面积，物体也可以在基本上等于大气压的压力下用电子均匀有效地修改。 该方法使用具有根据隧道效应从平面电子发射部分发射电子的能力的冷阴极电子发射体，并且优选地包括一对电极，以及包括设置在电极之间的纳米晶硅的强场漂移层。 该物体通过在电极之间施加电压而暴露于从平面电子发射部分发射的电子。

公开(公告)号：US20060049393A1

公开(公告)日：2006-03-09

申请号：US10538738

申请日：2003-12-26

申请人： Tsutomu Ichihara ,  Takuya Komoda ,  Koichi Aizawa ,  Yoshiaki Honda ,  Toru Baba

发明人： Tsutomu Ichihara ,  Takuya Komoda ,  Koichi Aizawa ,  Yoshiaki Honda ,  Toru Baba

IPC分类号： H01L29/06

CPC分类号： H01J1/3042 ,  H01J31/123

摘要： A field emission-type electron source has a plurality of electron source elements (10a) formed on the side of one surface (front surface) of an insulative substrate (11) composed of a glass substrate. Each of electron source elements (10a) includes a lower electrode (12), a buffer layer (14) composed of an amorphous silicon layer formed on the lower electrode (12), a polycrystalline silicon layer (3) formed on the buffer layer (14), a strong-field drift layer (6) formed on the polycrystalline silicon layer (3), and a surface electrode (7) formed on the strong-field drift layer (6). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.

摘要翻译： 场发射型电子源具有形成在由玻璃基板构成的绝缘基板（11）的一个表面（前表面）侧的多个电子源元件（10a）。 每个电子源元件（10a）包括下电极（12），由形成在下电极（12）上的非晶硅层组成的缓冲层（14），形成在缓冲层上的多晶硅层 （14），形成在多晶硅层（3）上的强场漂移层（6）和形成在强场漂移层（6）上的表面电极（7）。 场致发射型电子源可以实现电子发射特性的平滑变化。

公开(公告)号：US06765342B1

公开(公告)日：2004-07-20

申请号：US09688869

申请日：2000-10-17

申请人： Yoshiaki Honda ,  Tsutomu Ichihara ,  Takuya Komoda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Takashi Hatai

发明人： Yoshiaki Honda ,  Tsutomu Ichihara ,  Takuya Komoda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Takashi Hatai

IPC分类号： H01J130

CPC分类号： B82Y10/00 ,  H01J1/312

摘要： A field emission-type electron source 10 includes an insulative substrate 11 in the form of a glass substrate having an electroconductive layer 8 formed thereon. A strong electrical field drift layer 6 in the form of an oxidized porous polycrystalline silicon layer is formed over the electroconductive layer 8. This electroconductive layer 8 includes a lower electroconductive film 8a, made of copper and formed on the insulative substrate 11, and an upper electroconductive film 8b made of aluminum and formed over the electroconductive film 8a. The strong electrical field drift layer 6 is formed by forming a polycrystalline silicon layer on the electroconductive layer 8, rendering the polycrystalline silicon layer to be porous and finally oxidizing it. The upper electroconductive film 8b has a property that reacts easily with silicon and, therefore, formation of an amorphous layer which would occur during formation of the polycrystalline silicon layer can be suppressed.

摘要翻译： 场发射型电子源10包括形成有导电层8的玻璃基板形式的绝缘基板11。 在导电层8上形成氧化多孔多晶硅层形式的强电场漂移层6.该导电层8包括由铜制成的下部导电膜8a，并形成在绝缘基板11上， 由铝制成并形成在导电膜8a上的导电膜8b。 通过在导电层8上形成多晶硅层，形成强电场漂移层6，使多晶硅层多孔化，最终将其氧化。 上导电膜8b具有与硅反应容易的性质，因此可以抑制在形成多晶硅层期间发生的非晶层的形成。

公开(公告)号：US06707061B2

公开(公告)日：2004-03-16

申请号：US10048478

申请日：2002-07-22

申请人： Takuya Komoda ,  Yoshiaki Honda ,  Koichi Aizawa ,  Tsutomu Ichihara ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba

发明人： Takuya Komoda ,  Yoshiaki Honda ,  Koichi Aizawa ,  Tsutomu Ichihara ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba

IPC分类号： H01L2912

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J2329/00

摘要： In a field emission-type electron source (10), lower electrodes (8) made of an electroconductive layer, a strong field drift layer (6) including drift portions (6a) made of an oxidized or nitrided porous semiconductor, and surface electrodes (7) made of a metal layer are provided on an upper side of a dielectric substrate (11) made of glass. When voltage is applied to cause the surface electrodes (7) to be anodic with respect to the lower electrodes (8), electrons injected from the lower electrodes (8) to the strong field drift layer (6) are led to drift through the strong field drift layer (6) and are emitted outside through the surface electrodes (7). A pn-junction semiconductor layer composed of an n-layer (21) and a p-layer (22) is provided between the lower electrode (8) and the strong field drift layer (6) to prevent a leakage current from flowing to the surface electrode (7) from the lower electrode (8), thereby reducing amount of power consumption.

摘要翻译： 在场致发射型电子源（10）中，由导电层制成的下电极（8）包括由氧化或氮化多孔半导体制成的漂移部分（6a）的强场漂移层（6）和表面电极 7）由金属层制成，设置在由玻璃制成的电介质基板（11）的上侧。 当施加电压以使表面电极（7）相对于下电极（8）呈阳极时，从下电极（8）注入的强电场漂移层（6）的电子通过强电场 场漂移层（6），并通过表面电极（7）发射到外部。 在下电极（8）和强场漂移层（6）之间设置由n层（21）和p层（22）构成的pn结半导体层，以防止漏电流流向 表面电极（7），从而减少功耗。