摘要:
A probe device including a cantilever. A probe is attached to the cantilever and is allocated to be opposed to a surface of a sample attached thereto. An apparatus is provided with the probe device, which is capable of carrying out measurement of the sample while switching at a predetermined period two operating modes, a tapping mode for measuring a surface structure of the sample while vibrating the cantilever and a point contact mode for measuring an electrical characteristic of the sample while bringing the probe into contact with the sample.
摘要:
A probe device comprises a cantilever comprising a probe allocated to be opposed to a surface of a sample, means for feeding back a vibration amplitude value of the cantilever, thereby self-exciting and vibrating the cantilever at a predetermined frequency, means for applying a bias to the sample or the probe, and means for measuring a frequency shift caused by a charge-transfer force which acts between the cantilever and the sample.
摘要:
A probe device comprises a cantilever comprising a probe allocated to be opposed to a surface of a sample, means for feeding back a vibration amplitude value of the cantilever, thereby self-exciting and vibrating the cantilever at a predetermined frequency, means for applying a bias to the sample or the probe, and means for measuring a frequency shift caused by a charge-transfer force which acts between the cantilever and the sample.
摘要:
A probe device comprises a cantilever comprising a probe allocated to be opposed to a surface of a sample, and means for carrying out measurement of the sample while switching at a predetermined period two operating modes, a tapping mode for measuring a surface structure of the sample while vibrating the cantilever and a point contact mode for measuring an electrical characteristic of the sample while bringing the probe into contact with the sample.
摘要:
A switching element comprising: an insulative substrate; a first electrode and a second electrode provided on one surface of the insulative substrate; and an interelectrode gap which is provided between the first electrode and the second electrode, and which has a gap on the order of nanometers in which switching phenomenon of resistance occurs by applying predetermined voltage between the first electrode and the second electrode, wherein the one surface of the insulative substrate contains nitrogen.
摘要:
A two-terminal resistance switching element, wherein two silicon films each doped with an impurity are arranged with a gap width in the order of nanometers.
摘要:
A non-volatile memory device 100 contains: an insulating substrate 10; a first electrode 20 provided on the insulating substrate 10; a second electrode 30 provided on the insulating substrate 10; and a gap 40 set between the first electrode 20 and the second electrode 30, in which a distance G between the first electrode 20 and the second electrode 30 is: 0 nm
摘要:
A switching element 100 includes an insulating substrate 10, a first electrode 20 provided on the insulating substrate 10, a second electrode 30 provided on the insulating substrate 10, and an interelectrode gap 40 provided between the first electrode 20 and the second electrode 30, a distance G between the first electrode 20 and the second electrode 30 being 0 nm
摘要:
A two-terminal resistance switching element, wherein two silicon films each doped with an impurity are arranged with a gap width in the order of nanometers. The gap width is in the range of from 0.1 nm to 100 nm. A semiconductor device can be obtained by providing the two-terminal resistance switching element in a memory, a storage device or other device.
摘要:
There is provided a switching element which facilitates integration with higher density and lamination in a device, the switching element including: an insulating substrate; a first electrode provided on the insulating substrate; a second electrode provided above the first electrode; and a between-electrode gap section provided between the first electrode and the second electrode and including a nanometer-scale gap for causing a switching phenomenon of a resistor by applying a prescribed voltage between the first electrode and the second electrode.