摘要:
There is provided an evaluation object pattern determining apparatus capable of determining local patterns to be evaluated. The apparatus is for use in a pattern evaluating system storing patterns of a LSI chip as CAD data, picking out coordinates of local patterns whose process margin is small from the CAD data by way of simulation and assisting observation of the local patterns produced in a fabrication line. The apparatus includes a risk level map creating section for creating risk level maps in which risk areas are disposed. The risk area is assigned with a risk level obtained by digitizing that the risk area is an area whose process margin is smaller than other areas. The apparatus also includes a superimposition processing section for superimposing the coordinates of the local patterns with the risk level map to pick out the coordinates of the local patterns located within the risk area.
摘要:
The present invention comprises: a design layout data read part that acquires design layout data including location information of design circuit patterns used in steps of semiconductor fabrication; a wafer-chip information read part that acquires, from among data concerning a wafer on which a plurality of the design circuit patterns are formed per chip, wafer-chip information including at least design cell location information; a defect data read part that acquires defect data including location information of defects that occurred in the steps; a design layout data tracing processing part that creates a design layout data defect integrated projection display view by performing, based on the design layout data and the wafer-chip information, an integrated projection process on, among the design layout data, design layout data for a step in which a defect occurred and the defect data; and a defect integrated projection display apparatus that displays the design layout data defect integrated projection display view.
摘要:
A defect image processing apparatus uses a normalized cross correlation to image-match a layout image (52) acquired from a design data with an image acquired by removing, from a defect image (53), the defect area portions thereof, and displays, as a result of that matching, a layout image and defect image (54) on the display device. In the displayed layout image & defect image (54), not only the layout image, the layer of which is the same as that of the defect image (53), but also a layout image of another layer is displayed superimposed on the defect image (53). This makes it easier to analyze the factor of a systematic defect having occurred due to a positional relationship with another layer.
摘要:
A defect image processing apparatus uses a normalized cross correlation to image-match a layout image (52) acquired from a design data with an image acquired by removing, from a defect image (53), the defect area portions thereof, and displays, as a result of that matching, a layout image and defect image (54) on the display device. In the displayed layout image & defect image (54), not only the layout image, the layer of which is the same as that of the defect image (53), but also a layout image of another layer is displayed superimposed on the defect image (53). This makes it easier to analyze the factor of a systematic defect having occurred due to a positional relationship with another layer.
摘要:
There is provided an evaluation object pattern determining apparatus capable of determining local patterns to be evaluated. The apparatus is for use in a pattern evaluating system storing patterns of a LSI chip as CAD data, picking out coordinates of local patterns whose process margin is small from the CAD data by way of simulation and assisting observation of the local patterns produced in a fabrication line. The apparatus includes a risk level map creating section for creating risk level maps in which risk areas are disposed. The risk area is assigned with a risk level obtained by digitizing that the risk area is an area whose process margin is smaller than other areas. The apparatus also includes a superimposition processing section for superimposing the coordinates of the local patterns with the risk level map to pick out the coordinates of the local patterns located within the risk area.
摘要:
A defect is efficiently and effectively classified by accurately determining the state of overlap between a design layout pattern and the defect. This leads to simple identification of a systematic defect. A defective image obtained through defect inspection or review of a semiconductor device is automatically pattern-matched with design layout data. A defect is superimposed on a design layout pattern for at least one layer of a target layer, a layer immediately above the target layer, and a layer immediately below the target layer. The state of overlap of the defect is determined as within the pattern, over the pattern, or outside the pattern, and the defect is automatically classified.
摘要:
A defect is efficiently and effectively classified by accurately determining the state of overlap between a design layout pattern and the defect. This leads to simple identification of a systematic defect. A defective image obtained through defect inspection or review of a semiconductor device is automatically pattern-matched with design layout data. A defect is superimposed on a design layout pattern for at least one layer of a target layer, a layer immediately above the target layer, and a layer immediately below the target layer. The state of overlap of the defect is determined as within the pattern, over the pattern, or outside the pattern, and the defect is automatically classified.
摘要:
A desired area is extracted by directly analyzing information recorded in a design layout, an inspection recipe is generated by using this extraction method, and an efficient inspection is realized. The invention makes it easy to extract an area of a desired circuit module such as a memory mat by analyzing hierarchy information of design layout data, calculating reference frequency of each one cell in the design layout data that is its internal data, sorting the cells in order of increasing reference frequency, searching the object, and tracing its upper cell.