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    DISTRIBUTED IMAGE PROCESSING SYSTEM
    5.
    发明申请
    DISTRIBUTED IMAGE PROCESSING SYSTEM 审中-公开
    分布式图像处理系统

    公开(公告)号：US20140146172A1

    公开(公告)日：2014-05-29

    申请号：US14119617

    申请日：2012-02-21

    申请人： Koichiro Kajitani ,  Takeshi Naito ,  Toru Uenoyama ,  Makoto Hasegawa ,  Katsuhiko Ichinose

    发明人： Koichiro Kajitani ,  Takeshi Naito ,  Toru Uenoyama ,  Makoto Hasegawa ,  Katsuhiko Ichinose

    IPC分类号： H04N7/18

    CPC分类号： H04N7/18 ,  G06K9/00771 ,  G06K9/00979 ,  G08B13/19643 ,  G08B13/19676 ,  H04N1/00244 ,  H04N1/00286 ,  H04N1/00336 ,  H04N5/23219 ,  H04N5/23222 ,  H04N5/23296 ,  H04N7/181 ,  H04N2201/0084

    摘要： Provided is a distributed image processing system for detecting an object located in a monitoring target area and an attribute of the object. An area terminal processes an image captured by a video camera, and detects whether the object of which the image is captured is present. When detecting the object located in the monitoring target area, the area terminal focuses an image capturing visual field of a digital still camera on the detected object, and inputs a release signal to the digital still camera. The area terminal transmits a still image captured by the digital still camera to a server through a network. The server processes the still image transmitted from the area terminal, and detects an attribute such as a kind and a size of the object of which the image is captured. The server performs an output according to a detection result of the object located in the monitoring target area.

    摘要翻译： 提供了一种用于检测位于监视目标区域中的对象和对象的属性的分布式图像处理系统。 区域终端处理由摄像机拍摄的图像，并且检测是否存在拍摄图像的对象。 当检测到位于监视目标区域中的对象时，区域终端将数字静态照相机的图像捕获视野聚焦在检测到的对象上，并将释放信号输入到数字静态照相机。 区域终端通过网络将由数字静态照相机捕获的静止图像发送到服务器。 服务器处理从区域终端发送的静止图像，并且检测诸如捕获图像的对象的种类和大小的属性。 服务器根据位于监视对象区域内的对象的检测结果进行输出。

    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20080303091A1

    公开(公告)日：2008-12-11

    申请号：US12190433

    申请日：2008-08-12

    申请人： Akihiro SHIMIZU ,  Nagatoshi Ooki ,  Yusuke Nonaka ,  Katsuhiko Ichinose

    发明人： Akihiro SHIMIZU ,  Nagatoshi Ooki ,  Yusuke Nonaka ,  Katsuhiko Ichinose

    IPC分类号： H01L27/12 ,  H01L21/8238

    CPC分类号： H01L29/7845 ,  H01L21/0217 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823864 ,  H01L21/84 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which second region is different from the first region. An impurity concentration of a gate electrode of the n channel FET has an impurity concentration greater than an impurity concentration of the gate electrode of the p channel FET to thereby create a tensile stress in the direction of flow of a drain current in the channel forming region of the n channel FET. The tensile stress in the flow direction of the drain current in the channel forming region of the n channel FET is greater than a tensile stress in the direction of flow of a drain current in the channel forming region of the p channel FET.

    摘要翻译： 半导体器件包括n沟道导电型FET，其具有形成在半导体衬底的主表面上的第一区域中的沟道形成区域和形成在主表面的第二区域中的沟道形成区域的ap沟道导电型FET， 第二区域与第一区域不同。 n沟道FET的栅电极的杂质浓度的杂质浓度大于p沟道FET的栅电极的杂质浓度，从而在沟道形成区域中的漏极电流的流动方向产生拉伸应力 的n沟道FET。 n沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力大于p沟道FET的沟道形成区域中的漏极电流的流动方向上的拉伸应力。

    Method of manufacturing a semiconductor device using oblique ion injection
    7.
    发明授权
    Method of manufacturing a semiconductor device using oblique ion injection 失效
    使用斜离子注入制造半导体器件的方法

    公开(公告)号：US06613634B2

    公开(公告)日：2003-09-02

    申请号：US09929259

    申请日：2001-08-15

    申请人： Fumio Ootsuka ,  Katsuhiko Ichinose

    发明人： Fumio Ootsuka ,  Katsuhiko Ichinose

    IPC分类号： H01L218234

    CPC分类号： H01L27/11 ,  H01L27/1104

    摘要： Upon formation, by oblique ion injection, of a pocket ion region in a p channel type MISFET forming region (n type well) constituting an SRAM, the p channel type MISFET forming region is disposed at a distance from a resist film formed over an n channel type MISFET forming region (p type well), which distance is the product of the thickness H of the resist film and the tangent of an ion injection angle &thgr;. Consequently, an impurity is not injected from one direction in other areas, in spite of the injection from four directions, which makes it possible to suppress fluctuations of the impurity concentration in the pocket ion region.

    摘要翻译： 在通过倾斜离子注入形成构成SRAM的ap沟道型MISFET形成区域（n型阱）中的口袋离子区域时，p沟道型MISFET形成区域与形成在n沟道上的抗蚀剂膜一定距离 类型的MISFET形成区域（p型阱），该距离是抗蚀剂膜的厚度H与离子注入角度θ的切线的乘积。 因此，尽管从四个方向注入，但是在其他区域中不从一个方向注入杂质，这使得可以抑制口袋离子区域中的杂质浓度的波动。

    Structure and method of applying localized stresses to the channels of PFET and NFET transistors for improved performance
    9.
    发明授权
    Structure and method of applying localized stresses to the channels of PFET and NFET transistors for improved performance 失效
    将局部应力施加到PFET和NFET晶体管的通道以提高性能的结构和方法

    公开(公告)号：US07414293B2

    公开(公告)日：2008-08-19

    申请号：US11541575

    申请日：2006-10-03

    申请人： Akihiro Shimizu ,  Nagatoshi Ooki ,  Yusuke Nonaka ,  Katsuhiko Ichinose

    发明人： Akihiro Shimizu ,  Nagatoshi Ooki ,  Yusuke Nonaka ,  Katsuhiko Ichinose

    IPC分类号： H01L27/092

    CPC分类号： H01L29/7845 ,  H01L21/0217 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823864 ,  H01L21/84 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device has an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on the main surface of the semiconductor substrate, which second region is different from the first region. An internal stress generated in the channel formation region of the n channel conductivity type field effect transistor is different from an internal stress generated in the channel formation region of the p channel conductivity type field effect transistor. The internal stress generated in the channel formation region of the n channel conductivity type field effect transistor is a tensile stress, while the internal stress generated in the channel formation region of the p channel conductivity type field effect transistor is a compressive stress.

    摘要翻译： 半导体器件具有n沟道导电型场效应晶体管，其具有形成在半导体衬底的一个主表面上的第一区域中的沟道形成区域和具有形成在第二区域中的沟道形成区域的ap沟道导电型场效应晶体管， 半导体衬底的主表面，该第二区域与第一区域不同。 在n沟道导电型场效应晶体管的沟道形成区域中产生的内应力与在p沟道导电型场效应晶体管的沟道形成区域中产生的内应力不同。 在n沟道导电型场效应晶体管的沟道形成区域中产生的内应力是拉伸应力，而在p沟道导电型场效应晶体管的沟道形成区域中产生的内应力是压应力。