公开(公告)号：US20100012174A1

公开(公告)日：2010-01-21

申请号：US12218558

申请日：2008-07-16

申请人： Tansen Varghese ,  Mark A. Stan ,  Arthur Cornfeld ,  Fred Newman ,  Allen A. Gray

发明人： Tansen Varghese ,  Mark A. Stan ,  Arthur Cornfeld ,  Fred Newman ,  Allen A. Gray

IPC分类号： H01L31/00 ,  H01L21/306 ,  H01L21/02

CPC分类号： H01L31/06875 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02538 ,  H01L31/078 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and forming a contact layer over the third subcell having a fifth band gap greater than at least the magnitude of the second band gap.

摘要翻译： 一种通过提供用于半导体材料的外延生长的衬底来形成包括上部子电池，中间子电池和下部子电池的多结太阳能电池的方法; 在具有第一带隙的基板上形成第一太阳能子电池; 在所述第一太阳能子电池上形成具有小于所述第一带隙的第二带隙的第二太阳能子电池; 在所述第二子电池上形成渐变中间层，所述渐变中间层具有大于所述第二带隙的第三带隙; 在所述渐变中间层上形成具有小于所述第二带隙的第四带隙的第三太阳能子电池，使得所述第三子电池相对于所述第二子电池晶格失配; 以及在第三子电池上形成具有大于至少第二带隙的幅度的第五带隙的接触层。

公开(公告)号：US20090078309A1

公开(公告)日：2009-03-26

申请号：US11860183

申请日：2007-09-24

申请人： Arthur Cornfeld ,  Mark A. Stan ,  Tansen Varghese ,  Fred Newman

发明人： Arthur Cornfeld ,  Mark A. Stan ,  Tansen Varghese ,  Fred Newman

IPC分类号： H01L31/06 ,  H01L31/0248

CPC分类号： H01L31/1852 ,  H01L31/022425 ,  H01L31/06875 ,  H01L31/0693 ,  H01L31/1844 ,  Y02E10/544

摘要： A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell, the method including: providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a barrier layer over the second subcell to reduce threading dislocations; forming a grading interlayer over the barrier layer, the grading interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the grading interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell.

摘要翻译： 一种形成包括上部子电池，中间子电池和下部子电池的多结太阳能电池的方法，所述方法包括：提供用于半导体材料的外延生长的第一衬底; 在具有第一带隙的基板上形成第一太阳能子电池; 在所述第一太阳能子电池上形成具有小于所述第一带隙的第二带隙的第二太阳能子电池; 在所述第二子电池上形成阻挡层以减少穿透位错; 在所述阻挡层上形成分级中间层，所述分级中间层具有大于所述第二带隙的第三带隙; 以及在具有小于第二带隙的第四带隙的分级中间层上形成第三太阳能子电池，使得第三子电池相对于第二子电池晶格失配。

公开(公告)号：US20090272430A1

公开(公告)日：2009-11-05

申请号：US12258190

申请日：2008-10-24

申请人： Arthur Cornfeld ,  Mark A. Stan ,  Tansen Varghese ,  Benjamin Cho

发明人： Arthur Cornfeld ,  Mark A. Stan ,  Tansen Varghese ,  Benjamin Cho

IPC分类号： H01L31/04 ,  H01L31/18

CPC分类号： H01L31/06875 ,  H01L31/02168 ,  H01L31/0725 ,  H01L31/078 ,  Y02E10/544 ,  Y02P70/521

摘要： A multijunction solar cell including an upper first solar subcell having a first band gap; a middle second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap and having a base layer and an adjacent emitter layer, wherein the other layer adjacent to the emitter layer has an index of refraction substantially equal to that of the emitter layer; a graded interlayer adjacent to the second solar having a third band gap greater than said second band gap; and a lower solar subcell adjacent to the interlayer, and having a fourth band gap smaller than the second band gap, the third subcell being lattice mismatched with respect to the second subcell.

摘要翻译： 一种多结太阳能电池，包括具有第一带隙的上部第一太阳能子电池; 与第一太阳能子电池相邻并具有小于第一带隙的第二带隙并具有基极层和相邻发射极层的中间第二太阳能子电池，其中与发射极层相邻的另一层具有基本相等的折射率 到发射极层的; 与第二太阳能相邻的渐变中间层具有大于所述第二带隙的第三带隙; 以及与所述中间层相邻的下部太阳能子电池，并且具有小于所述第二带隙的第四带隙，所述第三子电池相对于所述第二子电池晶格失配。

公开(公告)号：US20100151618A1

公开(公告)日：2010-06-17

申请号：US12337014

申请日：2008-12-17

申请人： Paul R. Sharps ,  Arthur Cornfeld ,  Tansen Varghese ,  Fred Newman ,  Jacqueline Diaz

发明人： Paul R. Sharps ,  Arthur Cornfeld ,  Tansen Varghese ,  Fred Newman ,  Jacqueline Diaz

IPC分类号： H01L21/18 ,  H01L21/20

CPC分类号： H01L29/045 ,  H01L31/0392 ,  H01L31/06875 ,  H01L31/0735 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S438/977

摘要： A method of manufacturing a solar cell by providing a gallium arsenide carrier with a prepared bonding surface; providing a sapphire substrate; bonding the gallium arsenide carrier and the sapphire substrate to produce a composite structure; detaching the bulk of the gallium arsenide carrier from the composite structure, leaving a gallium arsenide growth substrate on the sapphire substrate; and depositing a sequence of layers of semiconductor material forming a solar cell on the growth substrate. For some solar cells, the method further includes mounting a surrogate second substrate on top of the sequence of layers of semiconductor material forming a solar cell; and removing the growth substrate.

摘要翻译： 一种制造太阳能电池的方法，其通过提供具有制备的接合表面的砷化镓载体; 提供蓝宝石衬底; 键合砷化镓载体和蓝宝石衬底以产生复合结构; 从复合结构中分离大部分砷化镓载体，在蓝宝石衬底上留下砷化镓生长衬底; 以及在生长衬底上沉积形成太阳能电池的半导体材料层序列。 对于一些太阳能电池，该方法还包括将替代第二衬底安装在形成太阳能电池的半导体材料层序列之上; 并除去生长底物。

公开(公告)号：US07785989B2

公开(公告)日：2010-08-31

申请号：US12337014

申请日：2008-12-17

申请人： Paul R. Sharps ,  Arthur Cornfeld ,  Tansen Varghese ,  Fred Newman ,  Jacqueline Diaz

发明人： Paul R. Sharps ,  Arthur Cornfeld ,  Tansen Varghese ,  Fred Newman ,  Jacqueline Diaz

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L29/045 ,  H01L31/0392 ,  H01L31/06875 ,  H01L31/0735 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S438/977

摘要： A method of manufacturing a solar cell by providing a gallium arsenide carrier with a prepared bonding surface; providing a sapphire substrate; bonding the gallium arsenide carrier and the sapphire substrate to produce a composite structure; detaching the bulk of the gallium arsenide carrier from the composite structure, leaving a gallium arsenide growth substrate on the sapphire substrate; and depositing a sequence of layers of semiconductor material forming a solar cell on the growth substrate. For some solar cells, the method further includes mounting a surrogate second substrate on top of the sequence of layers of semiconductor material forming a solar cell; and removing the growth substrate.

摘要翻译： 一种制造太阳能电池的方法，其通过提供具有制备的接合表面的砷化镓载体; 提供蓝宝石衬底; 键合砷化镓载体和蓝宝石衬底以产生复合结构; 从复合结构中分离大部分砷化镓载体，在蓝宝石衬底上留下砷化镓生长衬底; 以及在生长衬底上沉积形成太阳能电池的半导体材料层序列。 对于一些太阳能电池，该方法还包括将替代第二衬底安装在形成太阳能电池的半导体材料层序列之上; 并除去生长底物。

公开(公告)号：US20090078311A1

公开(公告)日：2009-03-26

申请号：US12102550

申请日：2008-04-14

申请人： Mark A. Stan ,  Arthur Cornfeld ,  Fred Newman

发明人： Mark A. Stan ,  Arthur Cornfeld ,  Fred Newman

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/1852 ,  H01L31/022425 ,  H01L31/06875 ,  H01L31/0693 ,  H01L31/1844 ,  Y02E10/544

摘要： A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell, the method including: providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a barrier layer over the second subcell using a surfactant, preferably a isoelectronic surfactant such as bismuth or antimony; forming a graded interlayer over the barrier layer, the graded interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell.

摘要翻译： 一种形成包括上部子电池，中间子电池和下部子电池的多结太阳能电池的方法，所述方法包括：提供用于半导体材料的外延生长的衬底; 在具有第一带隙的基板上形成第一太阳能子电池; 在所述第一太阳能子电池上形成具有小于所述第一带隙的第二带隙的第二太阳能子电池; 使用表面活性剂，优选诸如铋或锑的等电子表面活性剂在所述第二子电池上形成阻挡层; 在所述阻挡层上形成渐变中间层，所述渐变中间层具有大于所述第二带隙的第三带隙; 以及在所述渐变中间层上形成具有小于所述第二带隙的第四带隙的第三太阳能子电池，使得所述第三子电池相对于所述第二子电池晶格失配。

公开(公告)号：US20090229662A1

公开(公告)日：2009-09-17

申请号：US12047944

申请日：2008-03-13

申请人： Mark A. Stan ,  Allen L. Gray ,  Arthur Cornfeld ,  Fred Newman

发明人： Mark A. Stan ,  Allen L. Gray ,  Arthur Cornfeld ,  Fred Newman

IPC分类号： H01L31/0264 ,  H01L31/18 ,  H01L31/042

CPC分类号： H01L31/1844 ,  H01L31/06875 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell, including: providing a substrate having an off-cut of 15° from the (001) plane to the (111)A plane for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a grading interlayer over the second subcell layer, the grading interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the grading interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell.

摘要翻译： 一种形成包括上部子电池，中间亚电池和下部子电池的多结太阳能电池的方法，包括：提供具有从（001）面到（111）A平面的偏离15°的衬底，用于 半导体材料的外延生长; 在具有第一带隙的基板上形成第一太阳能子电池; 在所述第一太阳能子电池上形成具有小于所述第一带隙的第二带隙的第二太阳能子电池; 在所述第二子电池层上形成分级中间层，所述分级中间层具有大于所述第二带隙的第三带隙; 以及在具有小于第二带隙的第四带隙的分级中间层上形成第三太阳能子电池，使得第三子电池相对于第二子电池晶格失配。

公开(公告)号：US20100203730A1

公开(公告)日：2010-08-12

申请号：US12367991

申请日：2009-02-09

申请人： Arthur Cornfeld ,  Daniel McGlynn ,  Tansen Varghese

发明人： Arthur Cornfeld ,  Daniel McGlynn ,  Tansen Varghese

IPC分类号： H01L21/306

CPC分类号： H01L31/0735 ,  H01L31/06875 ,  H01L31/0725 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A process for selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown, by providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a surrogate substrate on top of the sequence of layers; attaching a connecting link element to at least two opposed points on the periphery of the surrogate substrate; and etching said separation layer while applying tension to said link element so as to remove said epitaxial layer from said first substrate.

摘要翻译： 一种通过提供第一衬底从其生长的单晶衬底选择性地释放外延层的工艺; 在所述第一衬底上沉积分离层; 在所述分离层上沉积形成太阳能电池的半导体材料层序列; 在层序列的顶部上安装和粘贴替代衬底; 将连接连接元件附接到所述替代基板的周边上的至少两个相对的点; 以及在对所述连接元件施加张力的同时蚀刻所述分离层，以便从所述第一基底去除所述外延层。

公开(公告)号：US08039291B2

公开(公告)日：2011-10-18

申请号：US12816205

申请日：2010-06-15

申请人： Arthur Cornfeld ,  Tansen Varghese ,  Jacqueline Diaz

发明人： Arthur Cornfeld ,  Tansen Varghese ,  Jacqueline Diaz

IPC分类号： H01L21/00

CPC分类号： H01L31/0735 ,  H01L31/06875 ,  H01L31/0725 ,  H01L31/078 ,  H01L31/18 ,  H01L31/1892 ,  Y02E10/544

摘要： A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; attaching a surrogate second substrate over the third solar subcell and removing the first substrate; and etching a first trough around the periphery of the solar cell to the surrogate second substrate so as to form a mesa structure on the surrogate second substrate and facilitate the removal of the solar cell from the surrogate second substrate.

摘要翻译： 一种通过提供用于半导体材料的外延生长的第一衬底来形成包括上部子电池，中间子电池和下部子电池的多结太阳能电池的方法; 在具有第一带隙的基板上形成第一太阳能子电池; 在所述第一太阳能子电池上形成具有小于所述第一带隙的第二带隙的第二太阳能子电池; 在所述第二子电池上形成分级中间层; 在所述渐变中间层上形成具有小于所述第二带隙的第四带隙的第三太阳能子电池，使得所述第三子电池相对于所述第二子电池晶格失配; 在所述第三太阳能子电池上附接替代的第二衬底并移除所述第一衬底; 以及将围绕所述太阳能电池的周边的第一槽蚀刻到所述代理第二基板，以便在所述替代第二基板上形成台面结构，并且便于从所述替代第二基板移除所述太阳能电池。

公开(公告)号：US07960201B2

公开(公告)日：2011-06-14

申请号：US12362201

申请日：2009-01-29

申请人： Arthur Cornfeld ,  Jacqueline Diaz ,  Tansen Varghese

发明人： Arthur Cornfeld ,  Jacqueline Diaz ,  Tansen Varghese

IPC分类号： H01L21/00

CPC分类号： H01L31/06875 ,  H01L31/022425 ,  H01L31/03042 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： A method of manufacturing a solar cell by providing a first substrate; depositing on a first substrate a sequence of layers of semiconductor material forming a solar cell including at least a top subcell and a bottom subcell; mounting a surrogate substrate on top of the sequence of layers adjacent to the bottom subcell; removing the first substrate to expose the surface of the top subcell; removing the surrogate substrate; and holding the solar cell on a vacuum chuck to support it for subsequent fabrication operations, such as attaching interconnects to the solar cells to form an interconnected array.

摘要翻译： 一种通过提供第一基板来制造太阳能电池的方法; 在第一衬底上沉积形成包括至少顶部子电池和底部子电池的太阳能电池的半导体材料层序列; 将代替衬底安装在与底部子电池相邻的层序列的顶部上; 去除第一基板以暴露顶部子电池的表面; 去除替代底物; 并且将太阳能电池保持在真空吸盘上以支持其用于随后的制造操作，例如将互连件附接到太阳能电池以形成互连的阵列。