公开(公告)号：US6065615A

公开(公告)日：2000-05-23

申请号：US805227

申请日：1997-02-24

申请人： Taroh Uchiyama ,  Takashi Tsukamoto ,  Jiro Nishihama

发明人： Taroh Uchiyama ,  Takashi Tsukamoto ,  Jiro Nishihama

IPC分类号： H01L21/673 ,  A47F7/00

CPC分类号： H01L21/67303 ,  H01L21/67306

摘要： A pair of annular end plates and a plurality of bars which are made of silicon carbide are formed in an integrally coupled/joined structure, having an entire length of not less than 800 mm. The end plates are unitary annular plates. Padding of silicon carbide is formed at a coupled/joined portion between an end plate and a bar so that the coupled/joined portion exhibits an obtuse corner.

摘要翻译： 一对环形端板和由碳化硅制成的多个杆形成为整体结合/接合的结构，其整个长度不小于800mm。 端板是单一的环形板。 在端板和棒之间的耦合/接合部分处形成碳化硅填料，使得耦合/接合部分呈钝角。

公开(公告)号：US5902406A

公开(公告)日：1999-05-11

申请号：US818096

申请日：1997-03-14

申请人： Taroh Uchiyama ,  Yukio Yoshikawa ,  Takashi Tsukamoto ,  Jiro Nishihama

发明人： Taroh Uchiyama ,  Yukio Yoshikawa ,  Takashi Tsukamoto ,  Jiro Nishihama

IPC分类号： C23C16/44 ,  C30B25/08 ,  C23C16/00

CPC分类号： C23C16/44 ,  C30B25/08

摘要： A low pressure CVD system comprising an inner tube having an upper end and a lower end opened, and made of a silicon carbide material, an outer tube including a circumferential wall surrounding an outer periphery of the inner tube with a predetermined spacing, an upper wall closing an upper end of the circumferential wall and a flange provided at a lower portion thereof, the outer tube having a lower end opened, a base portion for supporting the inner tube and the outer tube at the lower ends thereof, and for providing hermetic sealing between the lower end of the outer tube and the base portion, the base portion having a central portion formed with an opening, a lid provided for opening and shutting the opening in the base portion, and a furnace wall surrounding the circumferential wall and the upper wall of the outer tube, the furnace wall having a heater arranged on an inner side thereof wherein the outer tube is made of a silicon carbide material, and padding of a silicon carbide material is formed at a corner of a joined portion between the circumferential wall and the flange of the outer tube.

摘要翻译： 一种低压CVD系统，包括具有上端和下端打开并由碳化硅材料制成的内管，外管包括以预定间隔围绕内管的外周的周壁，上壁 闭合周壁的上端和设置在其下部的凸缘，外管的下端开口，用于在其下端支撑内管和外管的基部，并且用于提供气密密封 在所述外管的下端和所述基部之间，所述基部具有形成有开口的中心部，设置用于打开和关闭所述基部的开口的盖以及围绕所述周壁和所述上部的壁的炉壁 所述炉壁具有设置在其内侧的加热器，其中所述外管由碳化硅材料制成，并且填充碳化硅m 在周壁和外管的凸缘之间的接合部分的角部处形成有空隙。

公开(公告)号：US06407493B1

公开(公告)日：2002-06-18

申请号：US09634300

申请日：2000-08-09

申请人： Tsunehiko Sugawara ,  Jiro Nishihama ,  Shunichi Samejima

发明人： Tsunehiko Sugawara ,  Jiro Nishihama ,  Shunichi Samejima

IPC分类号： H01J2910

CPC分类号： H01J29/863 ,  H01J2229/8613 ,  H01J2329/8615

摘要： A vacuum envelope for display which reduces a stress and a deflection in a screen area of a panel face portion and has a light weight and which is suitable for a cathode ray tube or a field emission display, wherein the screen area is composed of a complex layer member comprising a glass layer as an inner layer and a transparent resin as an outer layer, and the proportion of the Young's modulus of the transparent resin to the Young's modulus of the glass layer is {fraction (1/10)}-⅕.

摘要翻译： 一种用于显示的真空外壳，其减小了面板部分的屏幕区域中的应力和偏转，并且重量轻并且适用于阴极射线管或场致发射显示器，其中屏幕区域由复合物 包含作为内层的玻璃层和透明树脂作为外层的层构件，透明树脂的杨氏模量与玻璃层的杨氏模量的比例为{分数（1/10）}-⅕。

公开(公告)号：US20050053890A1

公开(公告)日：2005-03-10

申请号：US10809705

申请日：2004-03-26

申请人： Masaaki Takata ,  Nobuo Kageyama ,  Susumu Otaguro ,  Jiro Nishihama

发明人： Masaaki Takata ,  Nobuo Kageyama ,  Susumu Otaguro ,  Jiro Nishihama

IPC分类号： H01L21/324 ,  C23C16/44 ,  C23C16/46 ,  C30B33/02 ,  H01L21/00 ,  F27D1/00

CPC分类号： C23C16/4409 ,  C23C16/46 ,  C30B33/02 ,  H01L21/67109

摘要： A thermal treatment system for semiconductors comprises an outer tube made of silicon carbide, a base hermetically supporting a lower portion of the outer tube, a lid selectively opening and closing an opening formed in a central portion of the base, and a reactor wall surrounding an outer peripheral wall and the like of the outer tube and having a heater provided on an inner side, wherein an annular sealing member and an annular supporting member are interposed between the outer tube and the base, and wherein the supporting member has an effective heat transfer coefficient of 50 to 2,000 W/(m2·K).

摘要翻译： 一种用于半导体的热处理系统包括由碳化硅制成的外管，密封地支撑外管的下部的底座，选择性地打开和关闭形成在基座的中心部分中的开口的盖子和围绕 外筒的外周壁等，并且具有设置在内侧的加热器，其中环形密封构件和环形支撑构件插入在外管和基座之间，并且其中支撑构件具有有效的热传递 系数为50至2,000W /（m 2 K）。

公开(公告)号：US06988886B2

公开(公告)日：2006-01-24

申请号：US10809705

申请日：2004-03-26

申请人： Masaaki Takata ,  Nobuo Kageyama ,  Susumu Otaguro ,  Jiro Nishihama

发明人： Masaaki Takata ,  Nobuo Kageyama ,  Susumu Otaguro ,  Jiro Nishihama

IPC分类号： F27D1/18

CPC分类号： C23C16/4409 ,  C23C16/46 ,  C30B33/02 ,  H01L21/67109

摘要： A thermal treatment system for semiconductors comprises an outer tube made of silicon carbide, a base hermetically supporting a lower portion of the outer tube, a lid selectively opening and closing an opening formed in a central portion of the base, and a reactor wall surrounding an outer peripheral wall and the like of the outer tube and having a heater provided on an inner side, wherein an annular sealing member and an annular supporting member are interposed between the outer tube and the base, and wherein the supporting member has an effective heat transfer coefficient of 50 to 2,000 W/(m2·K).

摘要翻译： 一种用于半导体的热处理系统包括由碳化硅制成的外管，密封地支撑外管的下部的底座，选择性地打开和关闭形成在基座的中心部分中的开口的盖子和围绕 外筒的外周壁等，并且具有设置在内侧的加热器，其中环形密封构件和环形支撑构件插入在外管和基座之间，并且其中支撑构件具有有效的热传递 系数为50〜2000W /（m 2·K）。