公开(公告)号：US08148184B2

公开(公告)日：2012-04-03

申请号：US13012449

申请日：2011-01-24

申请人： Tasuku Koyanagi ,  Hiroshi Morikazu

发明人： Tasuku Koyanagi ,  Hiroshi Morikazu

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50

摘要： An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of crossing division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate to the intersections of the crossing division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the intersections of the crossing division lines, thereby forming a plurality of crossing modified layers as division start points inside the substrate at the intersections of the crossing division lines; and a crack growing step of applying a CO2 laser beam along the division lines to grow cracks inside the substrate from the division start points.

摘要翻译： 一种用于将光学器件晶片分成多个单独的光学器件的光学器件晶片处理方法。 光学器件晶片由衬底和形成在衬底的前侧上的半导体层组成。 光学器件由形成在半导体层上的多个交叉分割线划分。 光学元件晶片处理方法包括：分割开始点形成步骤，在激光束的焦点设置在基板的内部的状态下，将具有透射波长的激光束施加到基板的交叉分割线的交叉点 与交叉分割线的交点相对应的区域，由此在交叉分割线的交点处形成作为分割开始点的多个交叉改质层， 以及沿分割线施加CO 2激光束以从分割开始点在基板内生长裂纹的裂纹扩展步骤。

公开(公告)号：US08178425B2

公开(公告)日：2012-05-15

申请号：US13011266

申请日：2011-01-21

申请人： Tasuku Koyanagi ,  Hiroshi Morikazu

发明人： Tasuku Koyanagi ,  Hiroshi Morikazu

IPC分类号： H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC分类号： B23K26/0853 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/354 ,  B23K26/40 ,  B23K26/53 ,  B23K26/703 ,  B23K37/0408 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L33/0095

摘要： An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of crossing division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate to the intersections of the crossing division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the intersections of the crossing division lines, thereby forming a plurality of modified dots as division start points inside the substrate at the intersections of the crossing division lines; and a crack growing step of applying a CO2 laser beam along the division lines to grow cracks inside the substrate from the division start points.

摘要翻译： 一种用于将光学器件晶片分成多个单独的光学器件的光学器件晶片处理方法。 光学器件晶片由衬底和形成在衬底的前侧上的半导体层组成。 光学器件由形成在半导体层上的多个交叉分割线划分。 光学元件晶片处理方法包括：分割开始点形成步骤，在激光束的焦点设置在基板的内部的状态下，将具有透射波长的激光束施加到基板的交叉分割线的交叉点 与交叉分割线的交点相对应的区域，从而在交叉分割线的交点处在基板内形成多个修改点作为分割开始点; 以及沿分割线施加CO 2激光束以从分割开始点在基板内生长裂纹的裂纹扩展步骤。

公开(公告)号：US20110195535A1

公开(公告)日：2011-08-11

申请号：US13011266

申请日：2011-01-21

申请人： Tasuku Koyanagi ,  Hiroshi Morikazu

发明人： Tasuku Koyanagi ,  Hiroshi Morikazu

IPC分类号： H01L21/304

CPC分类号： B23K26/0853 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/354 ,  B23K26/40 ,  B23K26/53 ,  B23K26/703 ,  B23K37/0408 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L33/0095

摘要： An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of crossing division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate to the intersections of the crossing division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the intersections of the crossing division lines, thereby forming a plurality of modified dots as division start points inside the substrate at the intersections of the crossing division lines; and a crack growing step of applying a CO2 laser beam along the division lines to grow cracks inside the substrate from the division start points.

摘要翻译： 一种用于将光学器件晶片分成多个单独的光学器件的光学器件晶片处理方法。 光学器件晶片由衬底和形成在衬底的前侧上的半导体层组成。 光学器件由形成在半导体层上的多个交叉分割线划分。 光学元件晶片处理方法包括：分割开始点形成步骤，在激光束的焦点设置在基板的内部的状态下，将具有透射波长的激光束施加到基板的交叉分割线的交叉点 与交叉分割线的交点相对应的区域，从而在交叉分割线的交点处在基板内形成多个修改点作为分割开始点; 以及沿分割线施加CO 2激光束以从分割开始点在基板内生长裂纹的裂纹扩展步骤。

公开(公告)号：US20110186554A1

公开(公告)日：2011-08-04

申请号：US13004171

申请日：2011-01-11

申请人： Tasuku Koyanagi ,  Hiroshi Morikazu

发明人： Tasuku Koyanagi ,  Hiroshi Morikazu

IPC分类号： B23K26/00

CPC分类号： B23K26/00

摘要： A wafer dividing method for dividing a wafer into individual devices along a plurality of division lines formed on the front side of the wafer, the individual devices being respectively formed in a plurality of regions partitioned by the division lines. The wafer dividing method includes a division inducing region forming step of applying a laser beam having a transmission wavelength to the wafer along the division lines in the condition where the focal point of the laser beam is set inside the wafer, thereby forming a plurality of modified layers as division inducing regions inside the wafer along the division lines; and a dividing step of applying a CO2 laser beam along the modified layers formed by the division inducing region forming step to thereby heat the wafer along the modified layers and next spraying a cooling medium to a heated area of the wafer heated by the CO2 laser beam, thereby dividing the wafer into the individual devices.

摘要翻译： 一种晶片分割方法，用于沿着形成在晶片的前侧上的多个分割线将晶片分成各个器件，各个器件分别形成在由分割线划分的多个区域中。 晶片分割方法包括：分割诱导区域形成步骤，在将激光束的焦点设置在晶片内部的状态下，沿分割线将具有透射波长的激光束施加到晶片，从而形成多个经修改的 层作为沿着分割线的晶片内的分割诱导区域; 以及分割步骤，沿着由分割诱导区域形成步骤形成的改性层施加CO 2激光束，从而沿着改性层加热晶片，接着将冷却介质喷射到由CO 2激光束加热的晶片的加热区域 ，从而将晶片分成各个装置。

公开(公告)号：US20110195537A1

公开(公告)日：2011-08-11

申请号：US13013026

申请日：2011-01-25

申请人： Tasuku Koyanagi ,  Hiroshi Morikazu

发明人： Tasuku Koyanagi ,  Hiroshi Morikazu

IPC分类号： H01L21/304

CPC分类号： B28D5/0011 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/172 ,  B23K2103/50 ,  H01L33/0095

摘要： An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate along the division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the division lines, thereby forming a plurality of modified layers as division start points inside the substrate along the division lines; and a crack growing step of applying a CO2 laser beam along the division lines to grow cracks inside the substrate from the division start points.

摘要翻译： 一种用于将光学器件晶片分成多个单独的光学器件的光学器件晶片处理方法。 光学器件晶片由衬底和形成在衬底的前侧上的半导体层组成。 光学器件由在半导体层上形成的多个划分线划分。 光学元件晶片处理方法包括：分割开始点形成步骤，在激光束的焦点被设置在基板的内部的对应于相应的区域的条件下，沿着分割线向基板施加具有透射波长的激光束 分割线，从而沿着分割线在基板内形成多个修改层作为划分开始点; 以及沿分割线施加CO 2激光束以从分割开始点在基板内生长裂纹的裂纹扩展步骤。

公开(公告)号：US20110195536A1

公开(公告)日：2011-08-11

申请号：US13012449

申请日：2011-01-24

申请人： Tasuku Koyanagi ,  Hiroshi Morikazu

发明人： Tasuku Koyanagi ,  Hiroshi Morikazu

IPC分类号： H01L21/304

CPC分类号： H01L33/0095 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50

摘要： An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of crossing division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate to the intersections of the crossing division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the intersections of the crossing division lines, thereby forming a plurality of crossing modified layers as division start points inside the substrate at the intersections of the crossing division lines; and a crack growing step of applying a CO2 laser beam along the division lines to grow cracks inside the substrate from the division start points.

摘要翻译： 一种用于将光学器件晶片分成多个单独的光学器件的光学器件晶片处理方法。 光学器件晶片由衬底和形成在衬底的前侧上的半导体层组成。 光学器件由形成在半导体层上的多个交叉分割线划分。 光学元件晶片处理方法包括：分割开始点形成步骤，在激光束的焦点设置在基板的内部的状态下，将具有透射波长的激光束施加到基板的交叉分割线的交叉点 与交叉分割线的交点相对应的区域，由此在交叉分割线的交点处形成作为分割开始点的多个交叉改质层， 以及沿分割线施加CO 2激光束以从分割开始点在基板内生长裂纹的裂纹扩展步骤。

公开(公告)号：US08513566B2

公开(公告)日：2013-08-20

申请号：US11979936

申请日：2007-11-09

申请人： Hiroshi Morikazu ,  Keiji Nomaru

发明人： Hiroshi Morikazu ,  Keiji Nomaru

IPC分类号： B23K26/02 ,  B23K26/38

CPC分类号： B23K26/0853 ,  B23K26/067 ,  B23K26/0673 ,  B23K26/082 ,  B23K2101/40

摘要： A laser beam processing machine comprising a laser beam application means for applying a laser beam to a workpiece held on a chuck table and a processing-feed means, wherein the laser beam application means comprises a first pulse laser beam application means and a second pulse laser beam application means; the first pulse laser beam application means comprises an acousto-optic deflection means for deflecting the optical axis of a pulse laser beam oscillated by a first pulse laser beam oscillation means in the processing-feed direction (X direction), and a first condenser lens for converging a pulse laser beam passing through the acousto-optic deflection means; the second pulse laser beam application means comprises a second condenser lens for converging a pulse laser beam oscillated by the second pulse laser beam oscillation means; and an NA value of the first condenser lens is set smaller than the NA value of the second condenser lens.

摘要翻译： 一种激光束处理机，包括：激光束施加装置，用于将激光束施加到夹持在卡盘台上的工件;以及加工进给装置，其中所述激光束施加装置包括第一脉冲激光束施加装置和第二脉冲激光器 射束施加装置; 第一脉冲激光束施加装置包括用于使由第一脉冲激光束振荡装置在处理进给方向（X方向）上振荡的脉冲激光束的光轴偏转的声光偏转装置，以及用于 会聚通过声光偏转装置的脉冲激光束; 第二脉冲激光束施加装置包括用于会聚由第二脉冲激光束振荡装置振荡的脉冲激光束的第二聚光透镜; 并且将第一聚光透镜的NA值设定为小于第二聚光透镜的NA值。

公开(公告)号：US07919725B2

公开(公告)日：2011-04-05

申请号：US11898505

申请日：2007-09-12

申请人： Hiroshi Morikazu

发明人： Hiroshi Morikazu

IPC分类号： B23K26/38

CPC分类号： H01L21/76898 ,  B23K26/082 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/389 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/02057 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a via hole reaching a bonding pad in a wafer having a plurality of devices on the front surface of a substrate and bonding pads on each of the devices, by applying a laser beam from the rear surface side of the substrate, comprising the steps of forming an annular groove by applying a laser beam to an annular area surrounding a via hole forming area on the rear surface of the substrate; and forming a via hole reaching a bonding pad by applying a laser beam to the via hole forming area surrounded by the annular groove from the rear surface side of the substrate.

摘要翻译： 一种通过从衬底的后表面侧施加激光束，形成通孔到达衬底的接合焊盘的方法，所述接合焊盘具有衬底前表面上的多个器件和每个器件上的接合焊盘，该激光束包括 通过将激光束施加到围绕基板后表面上的通孔形成区域的环形区域来形成环形槽的步骤; 以及通过将激光束从所述基板的后表面侧的所述环形槽包围的通路孔形成区域形成到达焊盘的通孔。

公开(公告)号：US07601616B2

公开(公告)日：2009-10-13

申请号：US11826911

申请日：2007-07-19

申请人： Hiroshi Morikazu ,  Ryugo Oba ,  Yukio Morishige ,  Toshio Tsuchiya ,  Koji Yamaguchi

发明人： Hiroshi Morikazu ,  Ryugo Oba ,  Yukio Morishige ,  Toshio Tsuchiya ,  Koji Yamaguchi

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/0622 ,  B23K26/40 ,  B23K2103/50

摘要： A wafer laser processing method for forming grooves along streets by applying a pulse laser beam along the streets for sectioning a plurality of devices of a wafer having the plurality of devices which are composed of a laminate consisting of an insulating film and a functional film, on the front surface of a substrate, wherein the pulse laser beam is set to have a repetition frequency of 150 kHz to 100 MHz and an energy per unit length of 5 to 25 J/m.

摘要翻译： 一种晶片激光加工方法，用于沿着街道施加脉冲激光束，沿着街道形成沟槽，用于将由具有由绝缘膜和功能膜构成的层叠体构成的多个器件的晶片的多个器件分隔开， 衬底的前表面，其中脉冲激光束被设置为具有150kHz至100MHz的重复频率和5至25J / m的每单位长度的能量。

公开(公告)号：US20090197351A1

公开(公告)日：2009-08-06

申请号：US12363318

申请日：2009-01-30

申请人： Hiroshi Morikazu

发明人： Hiroshi Morikazu

IPC分类号： H01L21/00

CPC分类号： H01L21/67092 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/0626 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/78

摘要： In a laser beam processing method, when a laser beam is emitted along a second predetermined dividing line to form a second groove intersecting a first groove previously formed, the power output of the laser beam is allowed to be a first power output in a first interval, that is, until the second predetermined dividing line reaches a position immediately before the first groove. In a second interval from the position close to the first groove to the first groove reached by the second predetermined dividing line, the power output of the laser beam is set to a second power output lower than the first power output. Thus, overheat on the periphery of the second interval can be suppressed.

摘要翻译： 在激光束处理方法中，当沿着第二预定分割线发射激光束以形成与预先形成的第一凹槽相交的第二凹槽时，激光束的功率输出被允许为第一间隔中的第一功率输出 即，直到第二预定分割线到达紧接在第一凹槽之前的位置。 在从靠近第一凹槽的位置到由第二预定分割线到达的第一凹槽的位置的第二间隔中，激光束的功率输出被设置为低于第一功率输出的第二功率输出。 因此，可以抑制第二间隔的周边的过热。