公开(公告)号：US20090269938A1

公开(公告)日：2009-10-29

申请号：US12497428

申请日：2009-07-02

申请人： Tatsuya OHORI ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

发明人： Tatsuya OHORI ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

IPC分类号： H01L21/46

CPC分类号： C23C16/4581 ,  C23C16/481

摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。

公开(公告)号：US08277893B2

公开(公告)日：2012-10-02

申请号：US12497428

申请日：2009-07-02

申请人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

发明人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

IPC分类号： C23C16/06

CPC分类号： C23C16/4581 ,  C23C16/481

摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。

公开(公告)号：US20070051316A1

公开(公告)日：2007-03-08

申请号：US11514927

申请日：2006-09-05

申请人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

发明人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

IPC分类号： C23C16/00

CPC分类号： C23C16/4581 ,  C23C16/481

摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。

公开(公告)号：US5833754A

公开(公告)日：1998-11-10

申请号：US789193

申请日：1991-11-08

申请人： Hiromi Ito ,  Kazushige Shiina ,  Tatsuya Ohori ,  Hitoshi Tanaka ,  Nobuaki Tomesakai

发明人： Hiromi Ito ,  Kazushige Shiina ,  Tatsuya Ohori ,  Hitoshi Tanaka ,  Nobuaki Tomesakai

IPC分类号： C30B25/08 ,  C23C16/54 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/54

摘要： An apparatus for growing a material at high temperature and employing a reaction gas. A reaction vessel is formed of a metal sidewall having outer and inner surfaces, the inner surface surrounding and defining a reaction chamber within the reaction vessel and which is generally vertically oriented. A cooling system maintains the metal sidewall of the reaction vessel at a temperature at which the metal does not produce contamination within the reaction chamber as a result of the high temperature operation, the reactant gases introduced into the reaction chamber or the product gases resultant from the reaction. A support mechanism includes a generally vertically oriented rod member which supports a susceptor, adapted to hold a wafer on which the material is to be grown, within the bottom part of the reaction chamber and, further, seals the reaction chamber. A sleeve is disposed closely adjacent to but spaced from the inner surface of the generally cylindrical metal sidewall portion and is of a material which remains stable at the high temperature of the reaction required for growing the material.

摘要翻译： 一种用于在高温下生长材料并使用反应气体的装置。 反应容器由具有外表面和内表面的金属侧壁形成，内表面围绕并在反应容器内限定反应室，并且通常垂直定向。 冷却系统将反应容器的金属侧壁保持在由于高温操作而导致反应室内的金属不会在反应室内产生污染的温度，引入反应室的反应气体或由反应器产生的产物气体 反应。 支撑机构包括一个大致垂直取向的杆件，该杆件支撑一个基座，适于在该反应室的底部内容纳待生长材料的晶片，并进一步密封该反应室。 套筒靠近但与大致圆柱形的金属侧壁部分的内表面间隔开，并且是在生长材料所需反应的高温下保持稳定的材料。

公开(公告)号：US06837940B2

公开(公告)日：2005-01-04

申请号：US10002177

申请日：2001-12-05

申请人： Junji Komeno ,  Kazushige Shiina

发明人： Junji Komeno ,  Kazushige Shiina

IPC分类号： C23C16/44 ,  C23C16/458 ,  C30B25/12 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/68785 ,  C23C16/4581 ,  C23C16/4584 ,  C30B25/12 ,  H01L21/68764 ,  H01L21/68771

摘要： A film-forming device with a substrate rotating mechanism includes a susceptor 30 in the form of a circular disk; a base plate 6 positioned below the susceptor 30 and rotatably retaining the susceptor 30; a revolution generating section 5 rotating the susceptor 30 at the outer periphery of the susceptor 30; a plurality of substrate tray retaining sections 23 arranged on the susceptor 30; a plurality of annular substrate trays 20 rotatably supported in the corresponding substrate tray retaining sections 23; a rotation generating section 4 rotating the substrate trays 20; and a plurality of substrates W retained in the substrate trays 20. The substrates W are revolved by the rotation of the susceptor 30 and rotated by the rotation of the substrate trays 20 to apply a certain film-forming process. The substrates W are rotated and revolved by one or more revolution generating section 5 and the rotation generating section 4.

摘要翻译： 具有基板旋转机构的成膜装置包括圆盘形式的基座30; 位于基座30下方并可旋转地保持基座30的基板6; 在基座30的外周旋转基座30的旋转生成部5; 布置在基座30上的多个基板托盘保持部23; 可旋转地支撑在相应的基板托盘保持部分23中的多个环形基板托盘20; 使基板托架20旋转的旋转生成部4; 以及保持在基板托盘20中的多个基板W.基板W通过基座30的旋转而旋转，并通过基板托盘20的旋转而旋转，以进行一定的成膜处理。 基板W由一个以上的转速生成部5和旋转生成部4旋转旋转。