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1.发明授权Method of controlling feature dimensions based upon etch chemistry concentrations 有权基于蚀刻化学浓度控制特征尺寸的方法公开(公告)号：US06352867B1
公开(公告)日：2002-03-05
申请号：US09478181
申请日：2000-01-05
IPC分类号： H01L2100
CPC分类号： H01L21/32134
摘要： The present invention is directed to a method of controlling the width of a gate electrode based upon the etch rate of a chemical bath. In one illustrative embodiment, the method comprises determining an etching rate for a chemical bath, determining the manufactured width of the gate electrode, and varying the time duration of an etching process performed in the bath depending upon the etch rate of the bath and the width of the gate electrode.
摘要翻译： 本发明涉及一种基于化学浴蚀刻速率来控制栅电极的宽度的方法。 在一个说明性实施例中，该方法包括确定用于化学浴的蚀刻速率，确定制造的栅电极的宽度，并且根据镀液的蚀刻速率和宽度来改变在镀液中进行的蚀刻工艺的持续时间 的栅电极。
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公开(公告)号：US06360133B1
公开(公告)日：2002-03-19
申请号：US09335405
申请日：1999-06-17
IPC分类号： G06F1900
CPC分类号： G05B19/41865 , G05B2219/32265 , G05B2219/32324 , G05B2219/45031 , H01L21/67276 , Y02P90/20
摘要： The present invention provides for a method and an apparatus for automatic routing of semiconductor devices within a manufacturing area. Performance of a plurality of manufacturing tools is tracked while processing semiconductor devices. At least one optimal combination of the manufacturing tools is determined based upon the tracked performance of the manufacturing tools. A queuing system is implemented to attain the optimal combination of the manufacturing tools. A dispatch system is deployed in response to the queuing system for routing the semiconductor devices within the manufacturing area.
摘要翻译： 本发明提供一种用于在制造区域内自动路由半导体器件的方法和装置。 在处理半导体器件的同时跟踪多个制造工具的性能。 基于制造工具的跟踪性能来确定制造工具的至少一个最佳组合。 实施排队系统以实现制造工具的最佳组合。 响应于用于在制造区域内布线半导体器件的排队系统部署调度系统。
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公开(公告)号：US06529789B1
公开(公告)日：2003-03-04
申请号：US10097467
申请日：2002-03-14
IPC分类号： G06F1900
CPC分类号： G05B19/41865 , G05B2219/32265 , G05B2219/32324 , G05B2219/45031 , H01L21/67276 , Y02P90/20
摘要： The present invention provides for a method and an apparatus for automatic routing of semiconductor devices within a manufacturing area. Performance of a plurality of manufacturing tools is tracked while processing semiconductor devices. At least one optimal combination of the manufacturing tools is determined based upon the tracked performance of the manufacturing tools. A queuing system is implemented to attain the optimal combination of the manufacturing tools. A dispatch system is deployed in response to the queuing system for routing the semiconductor devices within the manufacturing area.
摘要翻译： 本发明提供一种用于在制造区域内自动路由半导体器件的方法和装置。 在处理半导体器件的同时跟踪多个制造工具的性能。 基于制造工具的跟踪性能来确定制造工具的至少一个最佳组合。 实施排队系统以实现制造工具的最佳组合。 响应于用于在制造区域内布线半导体器件的排队系统部署调度系统。
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4.发明授权公开(公告)号：US06197604B1
公开(公告)日：2001-03-06
申请号：US09164823
申请日：1998-10-01
IPC分类号： G01R3126
CPC分类号： H01L22/20
摘要： A system and method of controlling multi-process, multi-product semiconductor fabrication tools. Individual, grouped, or composite controllers are designated to control various tool operations. First control parameters for a fabrication tool process are generated, where the first control parameters are based on first tool operation attributes. Second control parameters for the process are generated based on second tool operation attributes. The fabrication tool is then controlled by generating cooperative control parameters which are a function of the first and second control parameters. Disturbance information can be shared between controllers for use in generating the first and second control parameters while taking into account disturbance information already discovered and quantified.
摘要翻译： 一种控制多工艺，多产品半导体制造工具的系统和方法。 指定单个，组合或复合控制器来控制各种工具操作。 产生用于制造工具过程的第一控制参数，其中第一控制参数基于第一工具操作属性。 基于第二工具操作属性生成过程的第二个控制参数。 然后通过产生作为第一和第二控制参数的函数的协调控制参数来控制制造工具。 干扰信息可以在控制器之间共享，用于产生第一和第二控制参数，同时考虑已经发现和量化的干扰信息。
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5.发明授权Method for varying nitride strip makeup process based on field oxide loss and defect count 有权基于场氧化物损失和缺陷计数改变氮化物带组成过程的方法公开(公告)号：US06376261B1
公开(公告)日：2002-04-23
申请号：US09476893
申请日：2000-01-03
IPC分类号： H01L2100
CPC分类号： G05B19/41875 , G05B2219/32015 , G05B2219/32018 , G05B2219/45026 , H01L22/20 , Y02P90/22
摘要： A method is provided for manufacturing, the method including processing a first workpiece in a nitride processing step and measuring a thickness of a field oxide feature formed on the first workpiece. The method also includes forming an output signal corresponding to the thickness of the field oxide feature. In addition, the method includes feeding back a control signal based on the output signal to adjust processing performed on a second workpiece in the nitride processing step to adjust a thickness of a field oxide feature formed on the second workpiece toward at least a predetermined threshold value.
摘要翻译： 提供了一种用于制造的方法，所述方法包括在氮化物处理步骤中处理第一工件并测量形成在第一工件上的场氧化物特征的厚度。 该方法还包括形成对应于场氧化物特征的厚度的输出信号。 此外，该方法包括基于输出信号反馈控制信号，以调整在氮化物处理步骤中对第二工件执行的处理，以将形成在第二工件上的场氧化物特征的厚度调整至少至少预定阈值 。
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公开(公告)号：US06324341B1
公开(公告)日：2001-11-27
申请号：US09559147
申请日：2000-04-26
IPC分类号： F26B1900
CPC分类号： H01L21/67115 , H01L21/67248
摘要： A method is provided, the method comprising preheating a rapid thermal processing chamber according to a preheating recipe and processing a first plurality of workpieces in the rapid thermal processing chamber. The method also comprises performing first parameter measurements on first and second workpieces of the first plurality of workpieces, the first parameter measurements indicative of first processing differences between the first and second workpieces, and forming a first output signal corresponding to the first parameter measurements. The method further comprises adjusting the preheating recipe based on the first output signal and using the adjusted preheating recipe to preheat the rapid thermal processing chamber for processing a second plurality of workpieces in the rapid thermal processing chamber to reduce second processing differences between first and second workpieces of the second plurality of workpieces.
摘要翻译： 提供了一种方法，该方法包括根据预热配方预热快速热处理室并处理快速热处理室中的第一多个工件。 该方法还包括对第一多个工件的第一和第二工件执行第一参数测量，第一参数测量指示第一和第二工件之间的第一处理差异，以及形成对应于第一参数测量的第一输出信号。 该方法还包括基于第一输出信号调整预热配方并使用经调节的预热配方来预热快速热处理室以处理快速热处理室中的第二多个工件，以减少第一和第二工件之间的第二处理差异 的第二多个工件。
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公开(公告)号：US06171174B2
公开(公告)日：2001-01-09
申请号：US09105980
申请日：1998-06-26
IPC分类号： B24B4900
CPC分类号： G05B19/41815 , B25J9/1669 , Y02P90/08
摘要： A system and method for controlling a polishing tool having multiple arms is provided. In accordance with one embodiment, a first removal rate for each arm based on a first wafer run is determined. A downforce adjustment input for each arm is then determined based on a process model, for the arms, which relates a removal rate for a given arm to downforce adjustments on each of the arms and using each first removal rate. The downforce adjustment input for each arm is provided to the polishing tool for polishing a subsequent run. In this manner, the method takes into account each arms removal rate dependency on the downforce adjustments for all of the arms. This can provide reduced removal rate variations between arms as well as between wafer lots and improve the characteristics of the ultimately formed semiconductor devices.
摘要翻译： 提供了一种用于控制具有多个臂的抛光工具的系统和方法。 根据一个实施例，确定基于第一晶片行程的每个臂的第一移除速率。 然后基于用于臂的过程模型来确定每个臂的下压力调整输入，其涉及给定臂的移除速率以降低每个臂上的调整并使用每个第一移除速率。 每个臂的下压力调节输入被提供给抛光工具，用于抛光后续的运行。 以这种方式，该方法考虑到对于所有臂的下压力调整的每个臂移除率的依赖性。 这可以提供臂之间以及晶片批次之间的降低的去除率变化，并且改善最终形成的半导体器件的特性。
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8.发明授权Method for adjusting rapid thermal processing (RTP) recipe setpoints based on wafer electrical test (WET) parameters 失效基于晶圆电测试（WET）参数调整快速热处理（RTP）配方设定点的方法公开(公告)号：US06856849B2
公开(公告)日：2005-02-15
申请号：US09731579
申请日：2000-12-06
CPC分类号： H01L22/20
摘要： A method is provided, the method comprising measuring at least one parameter characteristic of processing performed on a workpiece in a processing step, and modeling the at least one characteristic parameter measured using a correlation model. The method also comprises applying the correlation model to modify the processing performed in the processing step.
摘要翻译： 提供了一种方法，所述方法包括在处理步骤中测量在工件上执行的处理的至少一个参数特征，以及对使用相关模型测量的所述至少一个特征参数进行建模。 该方法还包括应用相关模型来修改在处理步骤中执行的处理。
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9.发明授权Method and apparatus for running metrology standard wafer routes for cross-fab metrology calibration 有权运行测量标准晶圆路线的方法和装置，用于跨机架计量学校准公开(公告)号：US06484064B1
公开(公告)日：2002-11-19
申请号：US09412472
申请日：1999-10-05
IPC分类号： G06F1900
CPC分类号： H01L21/67276
摘要： The present invention provides for a method and an apparatus for running metrology standard wafer routes for calibrating metrology data. A processing order for a run of semiconductor devices is determined. A metrology route based upon the processing order is determined. A metrology standard device is routed through the metrology route. Measurement data relating to the metrology standard device being routed though the metrology route is acquired. Metrology data processing upon the acquired measurement data is performed.
摘要翻译： 本发明提供一种用于运行用于校准测量数据的计量标准晶片路径的方法和装置。 确定半导体器件运行的处理顺序。 确定基于处理顺序的计量路线。 计量标准设备通过计量路线路由。 获取与通过测量路线路由的测量标准设备相关的测量数据。 对获取的测量数据进行计量数据处理。
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10.发明授权Method for determining a polishing recipe based upon the measured pre-polish thickness of a process layer 有权基于测量的处理层的预抛光厚度来确定抛光配方的方法公开(公告)号：US06213848B1
公开(公告)日：2001-04-10
申请号：US09372515
申请日：1999-08-11
IPC分类号： B24B100
CPC分类号： B24B49/02 , B24B37/005 , B24B37/042 , H01L22/26
摘要： The present invention is directed to the field of semiconductor processing and, more particularly, to a method of planarizing or polishing process layers formed above a surface of a semiconducting substrate. In one illustrative embodiment, the method comprises determining the thickness of a process layer formed above a semiconducting substrate and determining a polishing recipe for said process layer based upon the measured thickness of said process layer.
摘要翻译： 本发明涉及半导体处理领域，更具体地，涉及一种在半导体衬底的表面上形成的工艺层的平面化或抛光方法。 在一个说明性实施例中，该方法包括确定在半导体衬底上形成的工艺层的厚度，并且基于所测量的所述工艺层的厚度来确定所述工艺层的抛光配方。
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