公开(公告)号：US07897990B2

公开(公告)日：2011-03-01

申请号：US10599036

申请日：2005-02-22

申请人： Teruo Amoh ,  Sadamu Ishidu ,  Kenjiro Higaki ,  Yasushi Tsuzuki ,  Hiroshi Fukuda

发明人： Teruo Amoh ,  Sadamu Ishidu ,  Kenjiro Higaki ,  Yasushi Tsuzuki ,  Hiroshi Fukuda

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor light-emitting element mounting member with an improved effective light reflectivity in a metal film serving as an electrode layer and/or a reflective layer, in which the metal layer has improved adhesion to a substrate, mechanical strength, and reliability and superior light-emitting characteristics. The semiconductor light-emitting element mounting member (a submount) is made by forming on a substrate metal films formed from Ag, Al, or an alloy containing these metals. The particle diameter of the crystal grains of the metal films is no more than 0.5 μm and the center-line average roughness Ra of the surface is no more than 0.1 μm. In a semiconductor light-emitting device, a semiconductor light-emitting element is mounted in the submount.

摘要翻译： 在用作电极层和/或反射层的金属膜中具有改善的有效光反射率的半导体发光元件安装构件，其中金属层具有改善的对基板的粘附性，机械强度和可靠性以及优异的光 发光特性。 半导体发光元件安装构件（底座）通过在由Ag，Al或含有这些金属的合金形成的基板金属膜上形成。 金属膜的晶粒的粒径不大于0.5μm，表面的中心线平均粗糙度Ra不大于0.1μm。 在半导体发光装置中，半导体发光元件安装在基座中。

公开(公告)号：US20070215895A1

公开(公告)日：2007-09-20

申请号：US10599036

申请日：2005-02-22

申请人： Teruo Amoh ,  Sadamu Ishidu ,  Kenjiro Higaki ,  Yasushi Tsuzuki ,  Hiroshi Fukuda

发明人： Teruo Amoh ,  Sadamu Ishidu ,  Kenjiro Higaki ,  Yasushi Tsuzuki ,  Hiroshi Fukuda

IPC分类号： H01L31/12

CPC分类号： H01L33/60 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor light-emitting element mounting member with an improved effective light reflectivity in a metal film serving as an electrode layer and/or a reflective layer, in which the metal layer has improved adhesion to a substrate, mechanical strength, and reliability and superior light-emitting characteristics. The semiconductor light-emitting element mounting member (a submount) is made by forming on a substrate metal films formed from Ag, Al, or an alloy containing these metals. The particle diameter of the crystal grains of the metal films is no more than 0.5 μm and the center-line average roughness Ra of the surface is no more than 0.1 μm. In a semiconductor light-emitting device, a semiconductor light-emitting element is mounted in the submount.

摘要翻译： 在用作电极层和/或反射层的金属膜中具有改善的有效光反射率的半导体发光元件安装构件，其中金属层具有改善的对基板的粘附性，机械强度和可靠性以及优异的光 发光特性。 半导体发光元件安装构件（底座）通过在由Ag，Al或含有这些金属的合金形成的基板金属膜上形成。 金属膜的晶粒的粒径不大于0.5μm，表面的中心线平均粗糙度Ra不大于0.1μm。 在半导体发光装置中，半导体发光元件安装在基座中。

公开(公告)号：US20060220050A1

公开(公告)日：2006-10-05

申请号：US10569095

申请日：2004-08-18

申请人： Kenjiro Higaki ,  Sadamu Ishidu ,  Teruo Amoh ,  Yasushi Tsuzuki

发明人： Kenjiro Higaki ,  Sadamu Ishidu ,  Teruo Amoh ,  Yasushi Tsuzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： A semiconductor-light-emitting-device-mounting member BL comprises (a) a highly heat-dissipative member 1 having a main surface 10 on which connecting-use electrode layers 41 and 42 are provided to form a device-mounting area 10a and (b) a frame-shaped member 2 placed on the main surface 10 so as to surround the device-mounting area 10a. The device-mounting area 10a has an area that is 1.05 to 4 times the area of a semiconductor light-emitting device LE1. A light-emitting-diode-constituting member LE2 mounts a semiconductor light-emitting device LE1 on the device-mounting area 10a of the semiconductor-light-emitting-device-mounting member BL and has a fluorescent body and/or a protective resin LR filling the inside space of the frame-shaped member 2. A light-emitting diode LE3 mounts the light-emitting-diode-constituting member LE2 on a package 7.

摘要翻译： 半导体发光装置安装构件BL包括（a）具有主表面10的高散热构件1，其上设置有连接用电极层41和42以形成装置安装区域10a和 （b）以包围装置安装区域10a的方式放置在主表面10上的框状构件2。 装置安装区域10a的面积是半导体发光装置LE 1的面积的1.05〜4倍。 发光二极管构成部件LE2将半导体发光装置安装部件BL的半导体发光装置LE 1安装在半导体发光装置安装部件BL的装置安装区域10a上，具有荧光体和/或 保护树脂LR填充框状构件2的内部空间。 发光二极管LE 3将发光二极管构成部件LE 2安装在封装体7上。

公开(公告)号：US07491980B2

公开(公告)日：2009-02-17

申请号：US10569095

申请日：2004-08-18

申请人： Kenjiro Higaki ,  Sadamu Ishidu ,  Teruo Amoh ,  Yasushi Tsuzuki

发明人： Kenjiro Higaki ,  Sadamu Ishidu ,  Teruo Amoh ,  Yasushi Tsuzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： A semiconductor-light-emitting-device-mounting member BL comprises (a) a highly heat-dissipative member 1 having a main surface 10 on which connecting-use electrode layers 41 and 42 are provided to form a device-mounting area 10a and (b) a frame-shaped member 2 placed on the main surface 10 so as to surround the device-mounting area 10a. The device-mounting area 10a has an area that is 1.05 to 4 times the area of a semiconductor light-emitting device LE1. A light-emitting-diode-constituting member LE2 mounts a semiconductor light-emitting device LE1 on the device-mounting area 10a of the semiconductor-light-emitting-device-mounting member BL and has a fluorescent body and/or a protective resin LR filling the inside space of the frame-shaped member 2. A light-emitting diode LE3 mounts the light-emitting-diode-constituting member LE2 on a package 7.

摘要翻译： 半导体发光装置安装构件BL包括：（a）具有主表面10的高散热构件1，其上设置有连接用电极层41和42以形成装置安装区域10a和（ b）围绕装置安装区域10a放置在主表面10上的框状构件2。 装置安装区域10a的面积为半导体发光装置LE1的面积的1.05〜4倍。 发光二极管构成部件LE2将半导体发光装置LE1安装在半导体发光元件安装部件BL的器件安装区域10a上，并具有荧光体和/或保护树脂LR 填充框状构件2的内部空间。发光二极管LE3将发光二极管构成构件LE2安装在封装7上。

公开(公告)号：US07298049B2

公开(公告)日：2007-11-20

申请号：US10506510

申请日：2003-03-03

申请人： Teruo Amoh ,  Takashi Ishii ,  Kenjiro Higaki ,  Yasushi Tsuzuki

发明人： Teruo Amoh ,  Takashi Ishii ,  Kenjiro Higaki ,  Yasushi Tsuzuki

IPC分类号： H01L23/48

CPC分类号： H01S5/02272 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/02476 ,  H01L2924/00

摘要： A submount that enables the reliable mounting of a semiconductor light-emitting device on it, and a semiconductor unit incorporating the submount. A submount 3 comprises (a) a substrate 4; and (b) a solder layer 8 formed on the top surface 4f of the substrate 4. The solder layer 8 before melting has a surface roughness, Ra, of at most 0.18 μm. It is more desirable that the solder layer 8 before melting have a surface roughness, Ra, of at most 0.15 μm, yet more desirably at most 0.10 μm. A semiconductor unit 1 comprises the submount 3 and a laser diode 2 mounted on the solder layer 8 of the submount 3.

摘要翻译： 一种能够在其上可靠地安装半导体发光器件的基座，以及并入该基座的半导体单元。 基座3包括（a）基板4; 和（b）形成在基板4的顶面4f上的焊料层8。 熔融前的焊料层8的表面粗糙度Ra为0.18μm以下。 更理想的是，熔融前的焊料层8的表面粗糙度Ra为0.15μm以下，进一步优选为0.10μm以下。 半导体单元1包括基座3和安装在基座3的焊料层8上的激光二极管2。

公开(公告)号：US20050067636A1

公开(公告)日：2005-03-31

申请号：US10506510

申请日：2003-03-03

申请人： Teruo Amoh ,  Takashi Ishii ,  Kenjiro Higaki ,  Yasushi Tsuzuki

发明人： Teruo Amoh ,  Takashi Ishii ,  Kenjiro Higaki ,  Yasushi Tsuzuki

IPC分类号： H01L33/62 ,  H01S5/02 ,  H01S5/022 ,  H01L29/768

CPC分类号： H01S5/02272 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/02476 ,  H01L2924/00

摘要： A submount that enables the reliable mounting of a semiconductor light-emitting device on it, and a semiconductor unit incorporating the submount. A submount 3 comprises (a) a substrate 4; and (b) a solder layer 8 formed on the top surface 4f of the substrate 4. The solder layer 8 before melting has a surface roughness, Ra, of at most 0.18 μm. It is more desirable that the solder layer 8 before melting have a surface roughness, Ra, of at most 0.15 μm, yet more desirably at most 0.10 μm. A semiconductor unit 1 comprises the submount 3 and a laser diode 2 mounted on the solder layer 8 of the submount 3.

摘要翻译： 一种能够在其上可靠地安装半导体发光器件的基座，以及并入该基座的半导体单元。 基座3包括（a）基板4; 和（b）形成在基板4的顶面4f上的焊料层8.熔融前的焊料层8的表面粗糙度Ra为0.18μm以下。 更理想的是，熔融前的焊料层8的表面粗糙度Ra为0.15μm以下，进一步优选为0.10μm以下。 半导体单元1包括基座3和安装在基座3的焊料层8上的激光二极管2。