公开(公告)号：US06172857B2

公开(公告)日：2001-01-09

申请号：US09225913

申请日：1999-01-05

申请人： Teruo Inaguma ,  Seiji Onoe ,  Hiroshi Kano ,  Yoshito Ikeda ,  Seiichi Onodera

发明人： Teruo Inaguma ,  Seiji Onoe ,  Hiroshi Kano ,  Yoshito Ikeda ,  Seiichi Onodera

IPC分类号： G11B552

CPC分类号： G11B5/53 ,  G11B5/0086 ,  G11B5/23 ,  G11B5/4893

摘要： A magnetoresistive head includes a magnetoresistive element sandwiched between a pair of soft magnetic material-made shields to detect signal from a magnetic tape under a magnetoresistance effect, the magnetoresistive element having a magnetic sensor disposed obliquely, at a predetermined azimuth angle, to a direction perpendicular in which the magnetic tape is fed or moved; the magnetoresistive head being installed on a rotating drum to read signal on the magnetic tape by the helical scanning method. A recording/reproducing apparatus includes a rotating drum having installed thereon the magnetoresistive head as reading head and an inductive magnetic head as writing head, to write and/or read signal from the magnetic tape by the helical scanning method.

摘要翻译： 磁阻头包括夹在一对软磁材料制成的屏蔽之间以在磁阻效应下检测来自磁带的信号的磁阻元件，磁阻元件具有以预定的方位角倾斜地垂直于垂直方向 其中磁带被馈送或移动; 磁阻头安装在旋转鼓上，通过螺旋扫描方法读取磁带上的信号。一种记录/再现装置，包括：旋转鼓，其上安装有作为读取头的磁阻头和作为书写头的感应磁头， 通过螺旋扫描方法从磁带写入和/或读取信号。

公开(公告)号：US10764495B2

公开(公告)日：2020-09-01

申请号：US16217536

申请日：2018-12-12

申请人： Hiroyasu Uehara ,  Masakazu Terauchi ,  Masashi Miyata ,  Hiroshi Kano ,  Akira Nakano ,  Takeyoshi Nishimura

发明人： Hiroyasu Uehara ,  Masakazu Terauchi ,  Masashi Miyata ,  Hiroshi Kano ,  Akira Nakano ,  Takeyoshi Nishimura

IPC分类号： H04N5/262 ,  H04N5/232 ,  H04N5/347 ,  H04N5/349

摘要： An image processing apparatus includes processing circuitry. The processing circuitry is configured to detect a positional shift amount of each of a plurality of images; select a composite target image from the plurality of images based on the detected positional shift amount; and obtain a composite image based on the positional shift amount and the selected composite target image.

公开(公告)号：US20130082659A1

公开(公告)日：2013-04-04

申请号：US13614602

申请日：2012-09-13

申请人： Hiroshi Kano

发明人： Hiroshi Kano

IPC分类号： H02J7/00 ,  H02J9/00 ,  H01M2/10 ,  B60L1/00

CPC分类号： H01M2/105 ,  Y10T307/625

摘要： Provided is a battery pack including: an exterior case formed with one or more hole sections; a battery cell in which a positive electrode terminal section is formed on one end surface thereof and a negative electrode terminal section is formed on the other end surface thereof; a battery holder having a plurality of battery cell receiving sections receiving the battery cell; and a metal plate joined to the battery holder and formed with a terminal contact section.

摘要翻译： 提供一种电池组，其包括：形成有一个或多个孔部分的外壳; 在其一个端面形成有正极端子部的电池单元，在其另一端面上形成负极端子部; 电池座，具有接收所述电池单元的多个电池单元容纳部; 以及与电池座连接并形成有端子接触部的金属板。

公开(公告)号：US08093301B2

公开(公告)日：2012-01-10

申请号：US12064917

申请日：2006-08-25

申请人： Hiroshi Kano ,  Syuji Ikegami

发明人： Hiroshi Kano ,  Syuji Ikegami

IPC分类号： A61K31/192 ,  A61K31/136 ,  A61K31/122 ,  A61P37/08

CPC分类号： A61K31/122 ,  A61K31/135 ,  A61K31/136 ,  A61K31/192 ,  A61K31/196

摘要： The inventors have found that vitamin K3 and vitamin K5 which may be used in pharmaceuticals and foods or ACNQ, DHNA, or the like which can stimulate the growth of bifidobacteria can inhibit degranulation of basophil-like cells, exhibit a potent degranulation-inhibiting effect, and are useful anti-allergic agents or foods. The present invention provides an anti-allergic agent containing, as an active ingredient, one or more species selected from among 2-amino-3-carboxy-1,4-naphthoquinone, 1,4-dihydroxy-2-naphthoic acid, 1,4-naphthoquinone, 4-amino-2-methyl-1-naphthol, 2-methyl-1,4-naphthoquinone, 2-amino-3-chloro-1,4-naphthoquinone, and a salt thereof.

摘要翻译： 本发明人发现可用于药物和食品中的维生素K 3和维生素K5或可刺激双歧杆菌生长的ACNQ，DHNA等可以抑制嗜碱性粒细胞的脱颗粒，显示出有效的脱颗粒抑制作用， 并且是有用的抗过敏剂或食物。 本发明提供一种抗过敏剂，其含有选自2-氨基-3-羧基-1,4-萘醌，1,4-二羟基-2-萘甲酸，1,6-己二醇， 4-萘基醌，4-氨基-2-甲基-1-萘酚，2-甲基-1,4-萘醌，2-氨基-3-氯-1,4-萘醌及其盐。

公开(公告)号：US20100328992A1

公开(公告)日：2010-12-30

申请号：US12817327

申请日：2010-06-17

申请人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

发明人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/005 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C17/16 ,  G11C29/50 ,  G11C2029/4402 ,  Y10S977/935

摘要： A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.

摘要翻译： 存储器包括：多个存储器件，每个存储器件包括隧道磁阻效应器件，其包含磁化方向可反转的磁化自由层，包括绝缘材料的隧道势垒层和与之相关的磁化固定层 经由具有固定的磁化方向的隧道势垒层到达磁化自由层; 使用存储装置的磁化自由层的磁化方向记录信息的随机存取存储区域; 以及根据存储器件的隧道势垒层的故障是否记录信息的只读存储区域。

公开(公告)号：US20100314673A1

公开(公告)日：2010-12-16

申请号：US12796802

申请日：2010-06-09

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroshi Kano ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazuhiro Bessho ,  Yutaka Higo ,  Yuki Oishi ,  Shinichiro Kusunoki

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroshi Kano ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazuhiro Bessho ,  Yutaka Higo ,  Yuki Oishi ,  Shinichiro Kusunoki

IPC分类号： H01L27/115

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3277 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

摘要： A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.

摘要翻译： 存储器件包括：存储层，其基于磁性材料的磁化状态保持信息，第一中间层和第二中间层，其被设置为夹持存储层，并且各自由绝缘体，第一固定磁体 层，设置在与存储层相反的第一中间层的相对侧上;第二固定磁性层，设置在与存储层相反的第二中间层的相反侧;以及非磁性导电层，设置在第一中间层或第二中间层之间 第二中间层和存储层，存储器件被配置为使得自旋极化电子在层叠方向上被注入到其中以改变存储层的磁化方向，从而将信息存储在存储层中。

公开(公告)号：US20100135068A1

公开(公告)日：2010-06-03

申请号：US12629660

申请日：2009-12-02

申请人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

发明人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

IPC分类号： G11C11/02 ,  H01L43/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

摘要： A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.

摘要翻译： 提供一种电阻变化存储器件，并且包括构成隧道磁阻效应元件的堆叠体，该堆叠层具有其中磁化方向可切换并形成在导电层上的磁性层，并且该堆叠被包括在电阻变化 使用由电流注入引起的自旋转移效应来执行数据写入的存储单元。 堆叠形成为使得连接堆叠的各层的中心的线相对于垂直于其上形成有叠层的导电层的表面的方向倾斜。

公开(公告)号：US20080186384A1

公开(公告)日：2008-08-07

申请号：US12024716

申请日：2008-02-01

申请人： Yohei Ishii ,  Hiroshi Kano ,  Kozo Okuda ,  Keisuke Asari

发明人： Yohei Ishii ,  Hiroshi Kano ,  Kozo Okuda ,  Keisuke Asari

IPC分类号： H04N17/00

CPC分类号： H04N17/002 ,  G06T7/80 ,  G06T2207/30252

摘要： A camera calibration apparatus has a parameter deriver adapted to find parameters for projecting an image shot with a camera onto a predetermined surface. The parameter deriver finds the parameters based on a shot-for-calibration image from the camera, and the shot-for-calibration image includes a plurality of calibration patterns of previously known shapes arranged at different positions within the shooting area of the camera.

摘要翻译： 相机校准装置具有适于找到用于将用相机拍摄的图像投影到预定表面上的参数的参数提升器。 参数提取器基于来自相机的镜头校准图像找到参数，并且镜头校准图像包括布置在相机的拍摄区域内的不同位置处的先前已知形状的多个校准图案。

公开(公告)号：US20070076471A1

公开(公告)日：2007-04-05

申请号：US11535126

申请日：2006-09-26

申请人： Hiroshi Kano ,  Masanori Hosomi

发明人： Hiroshi Kano ,  Masanori Hosomi

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： A storage element includes a storage layer which holds information based on a magnetization state of a magnetic body, an upper pinned magnetic layer disposed above the storage layer with an upper intermediate layer therebetween, and a lower pinned magnetic layer disposed below the storage layer with a lower intermediate layer therebetween, wherein one of the upper intermediate layer and the lower intermediate layer is an insulating layer which forms a tunnel barrier, the other intermediate layer is a laminate including an insulating layer and a nonmagnetic conductive layer, and the magnetization direction of the storage layer is varied by passing a current through the storage element in the lamination direction to enable recording of information on the storage layer.

摘要翻译： 存储元件包括：存储层，其基于磁体的磁化状态保持信息;上部被钉扎的磁性层，其设置在其上部中间层之间的存储层上方;以及下部被钉扎的磁性层，其设置在存储层的下方， 下部中间层，其中上部中间层和下部中间层之一是形成隧道势垒的绝缘层，另一个中间层是包括绝缘层和非磁性导电层的层压体， 存储层通过使电流通过存储元件沿层叠方向而变化，以使得能够在存储层上记录信息。

公开(公告)号：US07026671B2

公开(公告)日：2006-04-11

申请号：US10457492

申请日：2003-06-09

申请人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

发明人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

IPC分类号： H01L29/76

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F41/302 ,  H01L27/228 ,  Y10T29/49034

摘要： A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device.

摘要翻译： 磁阻效应元件（1）具有一对铁磁材料层（磁化固定层（5）和磁化自由层（7））通过中间层（6）彼此相对以获得磁阻变化的布置 通过使电流在垂直于层表面的方向上流动，并且其中铁磁材料层通过包括旋转场退火和随后的静态场退火的退火退火。 磁存储器件包括该磁阻效应元件（1）和在厚度方向上夹着磁阻效应元件（1）的位线和字线。 当制造磁阻效应元件（1）和磁存储器件时，铁磁材料层（5,7）通过旋转场退火和随后的静态场退火进行退火。 提供了通过控制铁磁材料层的磁各向异性，包括该磁阻效应元件并且可能具有优良写入特性的磁存储器件而获得优异的磁特性的磁阻效应元件，以及用于制造这些磁阻效应元件和磁 存储设备。