公开(公告)号：US20090180311A1

公开(公告)日：2009-07-16

申请号：US12224485

申请日：2007-03-01

申请人： Teruo Ono ,  Shinya Kasai ,  Kensuke Kobayashi ,  Yoshinobu Nakatani ,  Hiroshi Kohno ,  Gen Tatara

发明人： Teruo Ono ,  Shinya Kasai ,  Kensuke Kobayashi ,  Yoshinobu Nakatani ,  Hiroshi Kohno ,  Gen Tatara

IPC分类号： G11C11/02 ,  H01L43/02 ,  H01F13/00 ,  H01F3/00 ,  H01L43/08

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/02 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： The present invention provides a novel element capable of simply controlling an in-plane rotational motion of a core (a rising spot of a magnetization) generated in the center of a ferromagnetic dot made by forming a ferromagnetic material into a nanosized disk shape. In addition, the present invention is achieved to provide a binary information memory element using a core, including a ferromagnetic dot, made of a disk-shaped ferromagnetic material, with a magnetic structure of a magnetic vortex structure, and a current supplier for supplying an alternating current with a predetermined alternating current in the radial direction of the ferromagnetic dot. In the case where the frequency of the current resonates with the intrinsic frequency of the ferromagnetic dot, it is possible to rotate the core in the plane of the dot. Since the core leaks a magnetic field, a microscopic actuator such as a motor can be obtained by using this element. Furthermore, supplying a current having a density not less than a predetermined value reverses the core. This allows the expression of binary information.

摘要翻译： 本发明提供了一种新颖的元件，其能够简单地控制通过将铁磁材料形成为纳米级盘形而形成的铁磁点的中心处产生的芯（磁化的上升点）的面内旋转运动。 另外，本发明的目的在于提供一种二进制信息存储元件，该二值信息存储元件使用包括由磁性铁磁材料制成的铁磁点，具有磁涡旋结构的磁结构的铁芯，以及用于提供 在铁磁点的径向上具有预定交变电流的交流电。 在电流频率与铁磁点的固有频率谐振的情况下，可以使芯在点的平面中旋转。 由于磁芯泄漏磁场，所以可以通过使用该元件来获得电动机等微观致动器。 此外，提供具有不小于预定值的密度的电流反转芯。 这允许表达二进制信息。

公开(公告)号：US07952915B2

公开(公告)日：2011-05-31

申请号：US12224485

申请日：2007-03-01

申请人： Teruo Ono ,  Shinya Kasai ,  Kensuke Kobayashi ,  Yoshinobu Nakatani ,  Hiroshi Kohno ,  Gen Tatara

发明人： Teruo Ono ,  Shinya Kasai ,  Kensuke Kobayashi ,  Yoshinobu Nakatani ,  Hiroshi Kohno ,  Gen Tatara

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/02 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： A novel element capable of simply controlling an in-plane rotational motion of a core (a rising spot of a magnetization) generated in the center of a ferromagnetic dot made by forming a ferromagnetic material into a nanosized disk shape is provided. In addition, a binary information memory element using a core, including a ferromagnetic dot, made of a disk-shaped ferromagnetic material, with a magnetic structure of a magnetic vortex structure, and a current supplier for supplying an alternating current with a predetermined alternating current in the radial direction of the ferromagnetic dot is provided. In the case where the frequency of the current resonates with the intrinsic frequency of the ferromagnetic dot, it is possible to rotate the core in the plane of the dot. Since the core leaks a magnetic field, a microscopic actuator such as a motor can be obtained by using this element. Furthermore, supplying a current having a density not less than a predetermined value reverses the core. This allows the expression of binary information.

摘要翻译： 提供了一种新颖的元件，其能够简单地控制通过将铁磁材料形成为纳米级盘形而形成的铁磁性点的中心产生的芯（磁化的上升点）的面内旋转运动。 此外，使用由磁性铁磁材料制成的包含铁磁点的磁芯与磁涡旋结构的磁结构的二进制信息存储元件以及用于向预定交流电供应交流电的电流供应器 在铁磁点的径向方向上设置。 在电流频率与铁磁点的固有频率谐振的情况下，可以使芯在点的平面中旋转。 由于磁芯泄漏磁场，所以可以通过使用该元件来获得电动机等微观致动器。 此外，提供具有不小于预定值的密度的电流反转芯。 这允许表达二进制信息。

公开(公告)号：US20110069541A1

公开(公告)日：2011-03-24

申请号：US12672330

申请日：2008-04-21

申请人： Teruo Ono ,  Yoshinobu Nakatani

发明人： Teruo Ono ,  Yoshinobu Nakatani

IPC分类号： G11C11/14 ,  H03J7/04

CPC分类号： G11C11/14 ,  G11C19/0808 ,  H01L43/08 ,  H03B15/006

摘要： The present invention uses a ferromagnetic thin wire having a domain wall inside, with the magnetic moment at the center thereof being perpendicular to the longitudinal axis of the thin wire. With the domain wall being fixed by a domain wall fixation device (e.g. antiferromagnetic thin wires) so that the domain wall is prevented from moving in the ferromagnetic thin wire, when a direct current is supplied, the magnetic moment rotates in the immobilized domain wall. This rotation of the moment can be detected by a TMR element or the like. This configuration of the ferromagnetic thin wire element can be directly used to create a microwave oscillator or magnetic memory.

摘要翻译： 本发明使用具有内壁的畴壁的铁磁细线，其中心处的磁矩垂直于细线的纵向轴线。 通过域壁固定装置（例如反铁磁细线）固定畴壁，使得防止畴壁在铁磁细线中移动，当提供直流电流时，磁矩在固定的畴壁中旋转。 瞬间的这种旋转可以由TMR元件等检测。 铁磁细线元件的这种配置可以直接用于产生微波振荡器或磁存储器。

公开(公告)号：US08345473B2

公开(公告)日：2013-01-01

申请号：US12672330

申请日：2008-04-21

申请人： Teruo Ono ,  Yoshinobu Nakatani

发明人： Teruo Ono ,  Yoshinobu Nakatani

IPC分类号： G11C11/14

CPC分类号： G11C11/14 ,  G11C19/0808 ,  H01L43/08 ,  H03B15/006

摘要： The present invention uses a ferromagnetic thin wire having a domain wall inside, with the magnetic moment at the center thereof being perpendicular to the longitudinal axis of the thin wire. With the domain wall being fixed by a domain wall fixation device (e.g. antiferromagnetic thin wires) so that the domain wall is prevented from moving in the ferromagnetic thin wire, when a direct current is supplied, the magnetic moment rotates in the immobilized domain wall. This rotation of the moment can be detected by a TMR element or the like. This configuration of the ferromagnetic thin wire element can be directly used to create a microwave oscillator or magnetic memory.

摘要翻译： 本发明使用具有内壁的畴壁的铁磁细线，其中心处的磁矩垂直于细线的纵向轴线。 通过域壁固定装置（例如反铁磁细线）固定畴壁，使得防止畴壁在铁磁细线中移动，当提供直流电流时，磁矩在固定的畴壁中旋转。 瞬间的这种旋转可以由TMR元件等检测。 铁磁细线元件的这种配置可以直接用于产生微波振荡器或磁存储器。

公开(公告)号：US07315467B2

公开(公告)日：2008-01-01

申请号：US11636616

申请日：2006-12-11

申请人： Jacques Miltat ,  Yoshinobu Nakatani

发明人： Jacques Miltat ,  Yoshinobu Nakatani

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： The present invention relates to a magnetoresistive hybrid memory cell comprising a first stacked structure comprising a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein said first magnetic region being provided with a fixed first magnetic moment vector and said second magnetic region being provided with a free second magnetic moment vector which is free to be switched between the same and opposite directions with respect to said fixed first magnetic moment vector of said first magnetic region, a second stacked structure being at least partly arranged in a lateral relationship as to said first stacked structure and comprising a third magnetic region being provided with a fixed third magnetic moment vector and said second magnetic region; wherein said first and second structures being arranged in between at least two electrodes in electrical contact therewith. It further relates to a method of writing to and reading of a magnetoresistive hybrid memory cell, wherein a writing voltage pulse is applied to electrodes on both sides of only said second structure, and wherein a reading voltage pulse is applied to electrodes on both sides of only said first structure.

摘要翻译： 磁阻混合存储单元技术领域本发明涉及一种包括第一层叠结构的磁阻混合存储单元，该第一堆叠结构包括磁性隧道结，该磁性隧道结包括由非磁性材料层隔开的平行的叠置关系堆叠的第一和第二磁性区域，其中所述第一磁性区域被提供 具有固定的第一磁矩矢量，并且所述第二磁性区域设置有相对于所述第一磁性区域的所述固定的第一磁矩矢量在相同和相反方向之间自由切换的自由的第二磁矩矢量，第二磁场矢量 所述堆叠结构至少部分地以所述第一堆叠结构的横向关系布置，并且包括具有固定的第三磁矩矢量和所述第二磁性区域的第三磁性区域; 其中所述第一和第二结构布置在与其接触的至少两个电极之间。 它还涉及一种写入和读取磁阻混合存储器单元的方法，其中写入电压脉冲施加到仅在所述第二结构的两侧的电极上，并且其中读取电压脉冲施加到 只说第一个结构。

公开(公告)号：US20060146598A1

公开(公告)日：2006-07-06

申请号：US11337667

申请日：2006-01-24

申请人： Jacques Miltat ,  Yoshinobu Nakatani

发明人： Jacques Miltat ,  Yoshinobu Nakatani

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C11/16

摘要： The present invention relates to a magnetoresistive hybrid memory cell comprising a first stacked structure comprising a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein said first magnetic region being provided with a fixed first magnetic moment vector and said second magnetic region being provided with a free second magnetic moment vector which is free to be switched between the same and opposite directions with respect to said fixed first magnetic moment vector of said first magnetic region, a second stacked structure being at least partly arranged in a lateral relationship as to said first stacked structure and comprising a third magnetic region being provided with a fixed third magnetic moment vector and said second magnetic region; wherein said first and second structures being arranged in between at least two electrodes in electrical contact therewith. It further relates to a method of writing to and reading of a magnetoresistive hybrid memory cell, wherein a writing voltage pulse is applied to electrodes on both sides of only said second structure, and wherein a reading voltage pulse is applied to electrodes on both sides of only said first structure.

摘要翻译： 磁阻混合存储单元技术领域本发明涉及一种包括第一层叠结构的磁阻混合存储单元，该第一堆叠结构包括磁隧道结，该磁隧道结包括由非磁性材料层隔开的并联叠置的堆叠的第一和第二磁区，其中所述第一磁区被设置 具有固定的第一磁矩矢量，并且所述第二磁性区域设置有相对于所述第一磁性区域的所述固定的第一磁矩矢量在相同和相反方向之间自由切换的自由的第二磁矩矢量，第二磁场矢量 所述堆叠结构至少部分地以所述第一堆叠结构的横向关系布置，并且包括具有固定的第三磁矩矢量和所述第二磁性区域的第三磁性区域; 其中所述第一和第二结构布置在与其接触的至少两个电极之间。 它还涉及一种写入和读取磁阻混合存储器单元的方法，其中写入电压脉冲施加到仅在所述第二结构的两侧的电极上，并且其中读取电压脉冲施加到 只说第一个结构。

公开(公告)号：US07630231B2

公开(公告)日：2009-12-08

申请号：US11845525

申请日：2007-08-27

申请人： Jacques Miltat ,  Yoshinobu Nakatani ,  Ulrich Klostermann

发明人： Jacques Miltat ,  Yoshinobu Nakatani ,  Ulrich Klostermann

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetoresistive hybrid memory cell includes first and second stacked structures. The first stacked structure includes a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein the first magnetic region has a fixed first magnetic moment vector and the second magnetic region has a free second magnetic moment vector that is switchable between the same and opposite directions with respect to the fixed first magnetic moment vector. The second stacked structure is at least partly arranged in a lateral relationship with respect to the first stacked structure and includes a third magnetic region having a fixed third magnetic moment vector and the second magnetic region. The first and second structures are arranged between at least two electrodes in electrical contact therewith.

摘要翻译： 磁阻混合存储单元包括第一和第二堆叠结构。 第一堆叠结构包括磁隧道结，该磁隧道结包括由非磁性材料层隔开的平行的叠置关系堆叠的第一和第二磁区，其中第一磁区具有固定的第一磁矩矢量，第二磁区具有 相对于固定的第一磁矩矢量可在相同和相反方向之间切换的自由的第二磁矩矢量。 第二堆叠结构至少部分地相对于第一堆叠结构布置在横向关系中，并且包括具有固定的第三磁矩矢量和第二磁性区域的第三磁性区域。 第一和第二结构布置在与其接触的至少两个电极之间。

公开(公告)号：US20070081382A1

公开(公告)日：2007-04-12

申请号：US11636616

申请日：2006-12-11

申请人： Jacques Miltat ,  Yoshinobu Nakatani

发明人： Jacques Miltat ,  Yoshinobu Nakatani

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： The present invention relates to a magnetoresistive hybrid memory cell comprising a first stacked structure comprising a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein said first magnetic region being provided with a fixed first magnetic moment vector and said second magnetic region being provided with a free second magnetic moment vector which is free to be switched between the same and opposite directions with respect to said fixed first magnetic moment vector of said first magnetic region, a second stacked structure being at least partly arranged in a lateral relationship as to said first stacked structure and comprising a third magnetic region being provided with a fixed third magnetic moment vector and said second magnetic region; wherein said first and second structures being arranged in between at least two electrodes in electrical contact therewith. It further relates to a method of writing to and reading of a magnetoresistive hybrid memory cell, wherein a writing voltage pulse is applied to electrodes on both sides of only said second structure, and wherein a reading voltage pulse is applied to electrodes on both sides of only said first structure.

摘要翻译： 磁阻混合存储单元技术领域本发明涉及一种包括第一层叠结构的磁阻混合存储单元，该第一堆叠结构包括磁性隧道结，该磁性隧道结包括由非磁性材料层隔开的平行的叠置关系堆叠的第一和第二磁性区域，其中所述第一磁性区域被提供 具有固定的第一磁矩矢量，并且所述第二磁性区域设置有相对于所述第一磁性区域的所述固定的第一磁矩矢量在相同和相反方向之间自由切换的自由的第二磁矩矢量，第二磁场矢量 所述堆叠结构至少部分地以所述第一堆叠结构的横向关系布置，并且包括具有固定的第三磁矩矢量和所述第二磁性区域的第三磁性区域; 其中所述第一和第二结构布置在与其接触的至少两个电极之间。 它还涉及一种写入和读取磁阻混合存储器单元的方法，其中写入电压脉冲施加到仅在所述第二结构的两侧的电极上，并且其中读取电压脉冲施加到 只说第一个结构。

公开(公告)号：US07061797B1

公开(公告)日：2006-06-13

申请号：US11024945

申请日：2004-12-30

申请人： Jacques Miltat ,  Yoshinobu Nakatani

发明人： Jacques Miltat ,  Yoshinobu Nakatani

IPC分类号： G11C11/14

CPC分类号： G11C11/16

摘要： A magnetoresistive hybrid memory cell includes first and second stacked structures. The first stacked structure includes a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein the first magnetic region has a fixed first magnetic moment vector and the second magnetic region has a free second magnetic moment vector that is switchable between the same and opposite directions with respect to the fixed first magnetic moment vector. The second stacked structure is at least partly arranged in a lateral relationship with respect to the first stacked structure and includes a third magnetic region having a fixed third magnetic moment vector and the second magnetic region. The first and second structures are arranged between at least two electrodes in electrical contact therewith.

公开(公告)号：US20080094881A1

公开(公告)日：2008-04-24

申请号：US11845525

申请日：2007-08-27

申请人： Jacques Miltat ,  Yoshinobu Nakatani ,  Ulrich Klostermann

发明人： Jacques Miltat ,  Yoshinobu Nakatani ,  Ulrich Klostermann

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetoresistive hybrid memory cell includes first and second stacked structures. The first stacked structure includes a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein the first magnetic region has a fixed first magnetic moment vector and the second magnetic region has a free second magnetic moment vector that is switchable between the same and opposite directions with respect to the fixed first magnetic moment vector. The second stacked structure is at least partly arranged in a lateral relationship with respect to the first stacked structure and includes a third magnetic region having a fixed third magnetic moment vector and the second magnetic region. The first and second structures are arranged between at least two electrodes in electrical contact therewith.

摘要翻译： 磁阻混合存储单元包括第一和第二堆叠结构。 第一堆叠结构包括磁隧道结，该磁隧道结包括由非磁性材料层隔开的并联叠置的堆叠的第一和第二磁区，其中第一磁区具有固定的第一磁矩矢量，第二磁区具有 相对于固定的第一磁矩矢量可在相同和相反方向之间切换的自由的第二磁矩矢量。 第二堆叠结构至少部分地相对于第一堆叠结构布置在横向关系中，并且包括具有固定的第三磁矩矢量和第二磁性区域的第三磁性区域。 第一和第二结构布置在与其接触的至少两个电极之间。