公开(公告)号：US20110069541A1

公开(公告)日：2011-03-24

申请号：US12672330

申请日：2008-04-21

申请人： Teruo Ono ,  Yoshinobu Nakatani

发明人： Teruo Ono ,  Yoshinobu Nakatani

IPC分类号： G11C11/14 ,  H03J7/04

CPC分类号： G11C11/14 ,  G11C19/0808 ,  H01L43/08 ,  H03B15/006

摘要： The present invention uses a ferromagnetic thin wire having a domain wall inside, with the magnetic moment at the center thereof being perpendicular to the longitudinal axis of the thin wire. With the domain wall being fixed by a domain wall fixation device (e.g. antiferromagnetic thin wires) so that the domain wall is prevented from moving in the ferromagnetic thin wire, when a direct current is supplied, the magnetic moment rotates in the immobilized domain wall. This rotation of the moment can be detected by a TMR element or the like. This configuration of the ferromagnetic thin wire element can be directly used to create a microwave oscillator or magnetic memory.

摘要翻译： 本发明使用具有内壁的畴壁的铁磁细线，其中心处的磁矩垂直于细线的纵向轴线。 通过域壁固定装置（例如反铁磁细线）固定畴壁，使得防止畴壁在铁磁细线中移动，当提供直流电流时，磁矩在固定的畴壁中旋转。 瞬间的这种旋转可以由TMR元件等检测。 铁磁细线元件的这种配置可以直接用于产生微波振荡器或磁存储器。

公开(公告)号：US20090180311A1

公开(公告)日：2009-07-16

申请号：US12224485

申请日：2007-03-01

申请人： Teruo Ono ,  Shinya Kasai ,  Kensuke Kobayashi ,  Yoshinobu Nakatani ,  Hiroshi Kohno ,  Gen Tatara

发明人： Teruo Ono ,  Shinya Kasai ,  Kensuke Kobayashi ,  Yoshinobu Nakatani ,  Hiroshi Kohno ,  Gen Tatara

IPC分类号： G11C11/02 ,  H01L43/02 ,  H01F13/00 ,  H01F3/00 ,  H01L43/08

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/02 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： The present invention provides a novel element capable of simply controlling an in-plane rotational motion of a core (a rising spot of a magnetization) generated in the center of a ferromagnetic dot made by forming a ferromagnetic material into a nanosized disk shape. In addition, the present invention is achieved to provide a binary information memory element using a core, including a ferromagnetic dot, made of a disk-shaped ferromagnetic material, with a magnetic structure of a magnetic vortex structure, and a current supplier for supplying an alternating current with a predetermined alternating current in the radial direction of the ferromagnetic dot. In the case where the frequency of the current resonates with the intrinsic frequency of the ferromagnetic dot, it is possible to rotate the core in the plane of the dot. Since the core leaks a magnetic field, a microscopic actuator such as a motor can be obtained by using this element. Furthermore, supplying a current having a density not less than a predetermined value reverses the core. This allows the expression of binary information.

摘要翻译： 本发明提供了一种新颖的元件，其能够简单地控制通过将铁磁材料形成为纳米级盘形而形成的铁磁点的中心处产生的芯（磁化的上升点）的面内旋转运动。 另外，本发明的目的在于提供一种二进制信息存储元件，该二值信息存储元件使用包括由磁性铁磁材料制成的铁磁点，具有磁涡旋结构的磁结构的铁芯，以及用于提供 在铁磁点的径向上具有预定交变电流的交流电。 在电流频率与铁磁点的固有频率谐振的情况下，可以使芯在点的平面中旋转。 由于磁芯泄漏磁场，所以可以通过使用该元件来获得电动机等微观致动器。 此外，提供具有不小于预定值的密度的电流反转芯。 这允许表达二进制信息。

公开(公告)号：US08345473B2

公开(公告)日：2013-01-01

申请号：US12672330

申请日：2008-04-21

申请人： Teruo Ono ,  Yoshinobu Nakatani

发明人： Teruo Ono ,  Yoshinobu Nakatani

IPC分类号： G11C11/14

CPC分类号： G11C11/14 ,  G11C19/0808 ,  H01L43/08 ,  H03B15/006

摘要： The present invention uses a ferromagnetic thin wire having a domain wall inside, with the magnetic moment at the center thereof being perpendicular to the longitudinal axis of the thin wire. With the domain wall being fixed by a domain wall fixation device (e.g. antiferromagnetic thin wires) so that the domain wall is prevented from moving in the ferromagnetic thin wire, when a direct current is supplied, the magnetic moment rotates in the immobilized domain wall. This rotation of the moment can be detected by a TMR element or the like. This configuration of the ferromagnetic thin wire element can be directly used to create a microwave oscillator or magnetic memory.

摘要翻译： 本发明使用具有内壁的畴壁的铁磁细线，其中心处的磁矩垂直于细线的纵向轴线。 通过域壁固定装置（例如反铁磁细线）固定畴壁，使得防止畴壁在铁磁细线中移动，当提供直流电流时，磁矩在固定的畴壁中旋转。 瞬间的这种旋转可以由TMR元件等检测。 铁磁细线元件的这种配置可以直接用于产生微波振荡器或磁存储器。

公开(公告)号：US07952915B2

公开(公告)日：2011-05-31

申请号：US12224485

申请日：2007-03-01

申请人： Teruo Ono ,  Shinya Kasai ,  Kensuke Kobayashi ,  Yoshinobu Nakatani ,  Hiroshi Kohno ,  Gen Tatara

发明人： Teruo Ono ,  Shinya Kasai ,  Kensuke Kobayashi ,  Yoshinobu Nakatani ,  Hiroshi Kohno ,  Gen Tatara

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/02 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： A novel element capable of simply controlling an in-plane rotational motion of a core (a rising spot of a magnetization) generated in the center of a ferromagnetic dot made by forming a ferromagnetic material into a nanosized disk shape is provided. In addition, a binary information memory element using a core, including a ferromagnetic dot, made of a disk-shaped ferromagnetic material, with a magnetic structure of a magnetic vortex structure, and a current supplier for supplying an alternating current with a predetermined alternating current in the radial direction of the ferromagnetic dot is provided. In the case where the frequency of the current resonates with the intrinsic frequency of the ferromagnetic dot, it is possible to rotate the core in the plane of the dot. Since the core leaks a magnetic field, a microscopic actuator such as a motor can be obtained by using this element. Furthermore, supplying a current having a density not less than a predetermined value reverses the core. This allows the expression of binary information.

摘要翻译： 提供了一种新颖的元件，其能够简单地控制通过将铁磁材料形成为纳米级盘形而形成的铁磁性点的中心产生的芯（磁化的上升点）的面内旋转运动。 此外，使用由磁性铁磁材料制成的包含铁磁点的磁芯与磁涡旋结构的磁结构的二进制信息存储元件以及用于向预定交流电供应交流电的电流供应器 在铁磁点的径向方向上设置。 在电流频率与铁磁点的固有频率谐振的情况下，可以使芯在点的平面中旋转。 由于磁芯泄漏磁场，所以可以通过使用该元件来获得电动机等微观致动器。 此外，提供具有不小于预定值的密度的电流反转芯。 这允许表达二进制信息。

公开(公告)号：US20100157662A1

公开(公告)日：2010-06-24

申请号：US11919189

申请日：2006-04-26

申请人： Teruo Ono ,  Akinobu Yamaguchi ,  Saburo Nasu

发明人： Teruo Ono ,  Akinobu Yamaguchi ,  Saburo Nasu

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C7/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C5/063 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/0207 ,  H01L27/228

摘要： In one embodiment of the present invention, an MRAM is an MRAM including: a plurality of write word lines; a plurality of bit lines provided so as to intersect with the write word lines; and TMR elements provided at respective intersections of the write word lines and the bit lines. Each of the TMR elements includes a first ferromagnetic layer of which magnetization direction is variable, a second ferromagnetic layer of which magnetization direction is fixed, and a tunnel wall which is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The bit line is provided, for example, so as to bulge in the direction in which the write word line extends at the intersection of the bit line and the write word line, so that a magnetic wall is introduced at a desired position of the bit line. Further, a current fed through the bit line is fed through the first ferromagnetic layer at the time of data writing. This makes it possible to provide the MRAM having a gigabit-class capacity.

摘要翻译： 在本发明的一个实施例中，MRAM是MRAM，包括：多个写入字线; 设置成与写入字线相交的多个位线; 并且TMR元件设置在写字线和位线的各个交叉处。 每个TMR元件包括其磁化方向可变的第一铁磁层，固定有磁化方向的第二铁磁层和夹在第一铁磁层和第二铁磁层之间的隧道壁。 例如，位线被设置为沿写入字线在位线和写入字线的交点处延伸的方向凸起，使得磁性壁被引入位的期望位置 线。 此外，在数据写入时，通过位线馈送的电流被馈送通过第一铁磁层。 这使得可以提供具有千兆级容量的MRAM。

公开(公告)号：US06351026B2

公开(公告)日：2002-02-26

申请号：US09891415

申请日：2001-06-27

申请人： Koki Hirasawa ,  Teruo Ono

发明人： Koki Hirasawa ,  Teruo Ono

IPC分类号： H01L2302

CPC分类号： H01L23/5384 ,  H01L21/4857 ,  H01L23/49861 ,  H01L23/5383 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H05K1/056 ,  H05K3/423 ,  H05K3/427 ,  H05K3/428 ,  H05K3/44 ,  H05K3/4614 ,  H05K3/4652 ,  H05K2201/0355 ,  H05K2201/09554 ,  H05K2201/09563 ,  H05K2201/0969 ,  H05K2201/10924 ,  H05K2203/0554 ,  H05K2203/0733 ,  H01L2924/00014 ,  H01L2924/00

摘要： A multilayered wiring structure includes a lower wiring layer, an interlevel insulating layer, a filling layer, an upper wiring layer, and a plated layer. The lower wiring layer is formed on a lead frame through an insulating layer. The interlevel insulating layer is formed on the lower wiring layer to have a via hole at a predetermined region thereof to expose an upper portion of the lower wiring layer. The filling layer is made of a conductive material to fill the via hole. The upper wiring layer is formed on the interlevel insulating layer to have an opening above a portion where the via hole is formed. The plated layer is formed on the upper wiring layer to be connected to the filling layer. A method of manufacturing a multilayered wiring structure is also disclosed.

摘要翻译： 多层布线结构包括下布线层，层间绝缘层，填充层，上布线层和镀层​​。 下布线层通过绝缘层形成在引线框架上。 层间绝缘层形成在下布线层上，以在其预定区域具有通孔以暴露下布线层的上部。 填充层由导电材料制成以填充通孔。 上部布线层形成在层间绝缘层上，在形成通孔的部分上方具有开口。 电镀层形成在上部布线层上，以连接到填充层。 还公开了一种制造多层布线结构的方法。

公开(公告)号：US06274404B1

公开(公告)日：2001-08-14

申请号：US09401789

申请日：1999-09-22

申请人： Koki Hirasawa ,  Teruo Ono

发明人： Koki Hirasawa ,  Teruo Ono

IPC分类号： H01L2100

CPC分类号： H01L23/5384 ,  H01L21/4857 ,  H01L23/49861 ,  H01L23/5383 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H05K1/056 ,  H05K3/423 ,  H05K3/427 ,  H05K3/428 ,  H05K3/44 ,  H05K3/4614 ,  H05K3/4652 ,  H05K2201/0355 ,  H05K2201/09554 ,  H05K2201/09563 ,  H05K2201/0969 ,  H05K2201/10924 ,  H05K2203/0554 ,  H05K2203/0733 ,  H01L2924/00014 ,  H01L2924/00

摘要： A multilayered wiring structure includes a lower wiring layer, an interlevel insulating layer, a filling layer, an upper wiring layer, and a plated layer. The lower wiring layer is formed on a lead frame through an insulating layer. The interlevel insulating layer is formed on the lower wiring layer to have a via hole at a predetermined region thereof to expose an upper portion of the lower wiring layer. The filling layer is made of a conductive material to fill the via hole. The upper wiring layer is formed on the interlevel insulating layer to have an opening above a portion where the via hole is formed. The plated layer is formed on the upper wiring layer to be connected to the filling layer. A method of manufacturing a multilayered wiring structure is also disclosed.

摘要翻译： 多层布线结构包括下布线层，层间绝缘层，填充层，上布线层和镀层​​。 下布线层通过绝缘层形成在引线框架上。 层间绝缘层形成在下布线层上，以在其预定区域具有通孔以暴露下布线层的上部。 填充层由导电材料制成以填充通孔。 上部布线层形成在层间绝缘层上，在形成通孔的部分上方具有开口。 电镀层形成在上部布线层上，以连接到填充层。 还公开了一种制造多层布线结构的方法。

公开(公告)号：US20070259133A1

公开(公告)日：2007-11-08

申请号：US11793029

申请日：2005-12-07

申请人： Teruo Ono ,  Shinpei Yamamoto ,  Yasumasa Morimoto ,  Mikio Takano

发明人： Teruo Ono ,  Shinpei Yamamoto ,  Yasumasa Morimoto ,  Mikio Takano

IPC分类号： B29C35/08 ,  B05D3/00

CPC分类号： H01F1/068 ,  B22F1/0018 ,  B22F2998/00 ,  B22F2998/10 ,  B82Y25/00 ,  B82Y30/00 ,  G11B5/70605 ,  G11B5/712 ,  H01F1/0054 ,  H01F1/09 ,  H01F41/0273 ,  B22F1/02 ,  B22F9/24 ,  B22F9/305 ,  B22F1/0085

摘要： A FePt alloy nanoparticle, which is expected to be a promising material used for an ultra-high-density magnetic recording medium of the next generation, is ordered by heat treatment to have high magnetic anisotropy, but there has been a problem that the particles are coalesced with each other and agglomerate during the heat treatment. According to the present invention, each particle of the alloy nanoparticles is covered with a coating such as SiO2, and thereafter a heat treatment for ordering is carried out. In this method, the alloy nanoparticles do not coalesce with each other even if the heat treatment is performed at such a high temperature as to allow all the particles to be fully ordered. After the heat treatment, only the coating is removed using an acid or alkali solution so that it is possible to obtain ordered alloy phase nanoparticles which are ordered and dispersible in various solutions. It is also possible to easily manufacture an ultra-high-density magnetic recording medium by coating surfaces of a substrate with a binder solution in which the particles are dispersed while applying a magnetic field in a predetermined direction.

摘要翻译： 预期是用于下一代超高密度磁记录介质的有希望的材料的FePt合金纳米颗粒通过热处理进行排序以具有高磁各向异性，但是存在颗粒为 在热处理期间彼此聚结并聚结。 根据本发明，用SiO 2等涂层覆盖合金纳米颗粒的每个颗粒，然后进行排序热处理。 在这种方法中，即使在如此高的温度下进行热处理以使全部颗粒被完全排序，合金纳米颗粒也不会彼此聚结。 在热处理之后，仅使用酸或碱溶液除去涂层，使得可以获得排列在各种溶液中的有序合金相纳米颗粒。 还可以通过在其中分散颗粒的粘合剂溶液涂覆基板的表面，同时沿预定方向施加磁场来容易地制造超高密度磁记录介质。

公开(公告)号：US20100215851A1

公开(公告)日：2010-08-26

申请号：US12596994

申请日：2007-04-25

申请人： Tetsuya Shoji ,  Naoki Nakamura ,  Akira Kato ,  Shinpei Yamamoto ,  Mikio Takano ,  Teruo Ono

发明人： Tetsuya Shoji ,  Naoki Nakamura ,  Akira Kato ,  Shinpei Yamamoto ,  Mikio Takano ,  Teruo Ono

IPC分类号： B05D7/00

CPC分类号： B22F1/025 ,  B22F1/0018 ,  B22F9/24 ,  B22F9/305 ,  B82Y30/00

摘要： A method of producing core/shell composite nano-particles exhibiting superior characteristics, by using as cores nano-particles heat treated in advance so as to give them a specific crystal structure in a state using a barrier layer to prevent sintering and forming shells on their surface, which eliminates hindrances to the shell forming reaction due to the phase transfer catalyst or other strongly sticky dispersant, is provided. A method of producing core/shell composite nano-particles comprising nano-sized core particles covered by shells, the method comprising dispersing core particles heat treated in advance to give them a crystal structure expressing the necessary characteristics in a first organic solvent by a first dispersant to prepare a first solution, adding a polar solvent to peel off the first dispersant from the core particles and making the nano-particles agglomerate to recover them, making the recovered core particles disperse in a second organic solvent by a second dispersant to form a second solution, and adding a precursor of the shells to the second solution and forming shells on the surfaces of the core particles.

摘要翻译： 通过使用预先热处理的核心纳米粒子来制造具有优异特性的核/壳复合纳米粒子的方法，以便在使用阻挡层的状态下给予其特定的晶体结构，以防止烧结和形成壳体 表面，其消除了由于相转移催化剂或其它强粘性分散剂而导致的壳形成反应的障碍。 一种制造核壳复合纳米颗粒的方法，其包括由壳覆盖的纳米尺寸的核心颗粒，该方法包括将预先热处理的芯颗粒分散在第一有机溶剂中，通过第一分散剂给予它们表达必要特性的晶体结构 制备第一溶液，加入极性溶剂以从芯颗粒上剥离第一分散剂并使纳米颗粒凝聚回收，使回收的芯颗粒通过第二分散剂分散在第二有机溶剂中以形成第二溶剂 溶液，并将壳的前体添加到第二溶液中并在芯颗粒的表面上形成壳。

公开(公告)号：US06555763B1

公开(公告)日：2003-04-29

申请号：US09397016

申请日：1999-09-15

申请人： Koki Hirasawa ,  Teruo Ono

发明人： Koki Hirasawa ,  Teruo Ono

IPC分类号： H01R1204

CPC分类号： H05K3/4629 ,  H01L21/4857 ,  H01L23/49805 ,  H01L23/5383 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/12042 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/0306 ,  H05K1/056 ,  H05K3/423 ,  H05K3/44 ,  H05K3/4617 ,  H05K3/4652 ,  H05K2201/09554 ,  H05K2201/09563 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A multilayered circuit board for a semiconductor chip module includes an underlying board, insulating layers, fixed-potential wiring layers, via holes, and metal layers. The underlying board has a major surface made of a metal material to which a fixed potential is applied. The insulating layers are stacked on the major surface of the underlying board and have wiring layers formed on their surfaces. The fixed-potential wiring layers constitute part of the wiring layers formed on the insulating layers. The via holes are formed below the fixed-potential wiring layers to extend through the insulating layers. The metal layers are filled in the via holes so as to make upper ends be connected to the lower surfaces of the fixed-potential wiring layers. One of the insulating layers in contact with the major surface of the underlying board is formed on the underlying board while the lower end of the metal layer is in contact with the major surface of the underlying board. The other insulating layer formed on the insulating layer in contact with the major surface of the underlying board is stacked while the lower end of the metal layer is in contact with the upper surface of the fixed-potential wiring layer of one insulating layer.

摘要翻译： 用于半导体芯片模块的多层电路板包括下面的板，绝缘层，固定电位布线层，通孔和金属层。 底板具有由施加固定电位的金属材料制成的主表面。 绝缘层层叠在下层基板的主表面上，并且在其表面上形成布线层。 固定电位布线层构成在绝缘层上形成的布线层的一部分。 通孔形成在固定电位布线层的下方，延伸穿过绝缘层。 金属层填充在通孔中，以使上端连接到固定电位布线层的下表面。 与下面的板的主表面接触的绝缘层之一形成在下面的板上，而金属层的下端与下面的板的主表面接触。 叠层在绝缘层上形成的与基板的主表面接触的绝缘层，同时金属层的下端与一个绝缘层的固定电位布线层的上表面相接触。