摘要:
A dielectric ceramic composition of the invention comprises: BaTiO3 as a main component, MgO: 0.50 to 3.0 moles, MnO: 0.05 to 0.5 moles, oxide (RE12O3) of element selected from Sm, Eu, and Gd, oxide (RE22O3) of element selected from Tb and Dy, oxide (RE32O3) of element selected from Y, Ho, Er, Yb, Tm and Lu, BaZrO3: 0.20 to 1.0 moles, and oxide of element selected from V, Ta, Mo, Nb, and W: 0.05 to 0.25 moles as subcomponents wherein each subcomponent is calculated as a conversion of an oxide or composite oxide, with respect to 100 moles of the main component, and contents of said RE12O3, RE22O3 and RE32O3 satisfy RE12O3
摘要:
A dielectric ceramic composition of the invention comprises: BaTiO3 as a main component, MgO: 0.50 to 3.0 moles, MnO: 0.05 to 0.5 moles, oxide (RE12O3) of element selected from Sm, Eu, and Gd, oxide (RE22O3) of element selected from Tb and Dy, oxide (RE32O3) of element selected from Y, Ho, Er, Yb, Tm and Lu, BaZrO3: 0.20 to 1.0 moles, and oxide of element selected from V, Ta, Mo, Nb, and W: 0.05 to 0.25 moles as subcomponents wherein each subcomponent is calculated as a conversion of an oxide or composite oxide, with respect to 100 moles of the main component, and contents of said RE12O3, RE22O3 and RE32O3 satisfy RE12O3
摘要:
A multilayer ceramic electronic component comprises an element body obtained by stacking dielectric layers (thickness t1) and electrode layers (thickness t2). The dielectric layer includes a compound expressed by ABO3 (A includes Ba, and may include Ca or Sr; and B includes Ti, and may include Zr or Hf), and includes 0.75 to 2.0 moles of MgO, 0.4 to 1.0 mole of an oxide of Y, Dy, Ho and the like in terms of the oxide, and 0.4 to 0.8 mole of SiO2 per 100 moles of the compound. A segregation phase containing Mg is formed in at least a part of an electrode missing portion. Line coverage of the electrode layer is 60 to 90% and relations of 0.3 μm≦t1≦2.0 and 0.3 μm≦t2
摘要:
A dielectric ceramic composition comprises barium titanate as a main component, and as subcomponents, 1.00 to 2.50 moles of an oxide of Mg, 0.01 to 0.20 mole of an oxide of Mn and/or Cr, 0.03 to 0.15 mole of an oxide of at least one element selected from a group consisting of V, Mo and W, 0.20 to 1.50 mole of an oxide of R1 where R1 is at least one selected from a group consisting of Y and Ho, 0.20 to 1.50 mole of an oxide of R2 where R2 is at least one selected from a group consisting of Eu, Gd and Tb and 0.30 to 1.50 mole of an oxide of Si and/or B, in terms of each oxide with respect to 100 moles of the barium titanate.
摘要:
A production method of a dielectric ceramic composition comprising a main component including barium titanate expressed by a composition formula of BamTiO2+m, wherein “m” satisfies 0.990
摘要:
A production method of a dielectric ceramic composition comprising a main component including barium titanate expressed by a composition formula of BamTiO2+m, wherein “m” satisfies 0.990
摘要:
A dielectric ceramic composition comprising a main component including BaTiO3, a fourth subcomponent including an oxide of R1 (note that R1 is at least one selected from Y, Ho, Er, Tm, Yb and Lu) and a fifth subcomponent including an oxide of R2 (note that R2 is at least one selected from Dy, Tb, Gd and Eu); wherein a total number of moles of R1 and R2 with respect to 100 moles of the main component is 2 to 6 moles when calculated as a conversion of the R1 and a conversion of the R2, and a ratio of the fifth subcomponent to the total number of moles of R1 and R2 with respect to 100 moles of the main component is in a relationship of 0.5≦R2/(R1+R2)≦0.75 when calculated as a conversion of the R1 and a conversion of the R2. According to the present invention, a high temperature load lifetime and capacity-temperature characteristics can be well balanced even when the dielectric layer of the electronic device is made thin, so that a sufficiently reliable dielectric ceramic composition can be provided.
摘要:
The invention aims at providing a dielectric ceramic composition including BamTiO2+m where “m” satisfies 0.99≦m≦1.01 and BanZrO2+n where “n” satisfies 0.99≦n≦1.01, an oxide of Mg, an oxide of R where R is at least one selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, an oxide of at least one element selected from Mn, Cr, Co and Fe, and an oxide of at least one element selected from Si, Li, Al, Ge and B. 35 to 65 moles of BanZrO2+n, 4 to 12 moles of an oxide of Mg, 4 to 15 moles of an oxide of R, 0.5 to 3 moles of an oxide of Mn, Cr, Co and Fe, and 3 to 9 moles of an oxide of Si, Li, Al, Ge and B are included therein per 100 moles of the BamTiO2+m.
摘要:
In order to provide dielectric ceramic composition having low IR defect rate and high relative dielectric constant even when the multilayer ceramic capacitor is made thinner, dielectric ceramic composition including a main component expressed by a composition formula {{Ba(1-x)Cax}O}A{Ti(1-y-z)ZryMgz}BO2 and subcomponents of Mn oxide, Y oxide, V oxide and Si oxide is provided. In the above formula, A, B, x , y and z are as follows: 0.995≦A/B≦1.020, 0.0001≦x≦0.07, preferably 0.001≦x≦0.05, 0.1≦y≦0.3 and 0.0005≦z≦0.0 1, preferably 0.003≦z≦0.0 1.
摘要翻译:为了提供具有低IR缺陷率和高相对介电常数的介电陶瓷组合物,即使当多层陶瓷电容器制得更薄时,包括由组成式{{Ba(1-x) (1-yz)Zr y>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>> 提供了Mn氧化物,Y氧化物,V氧化物和Si氧化物的次要成分。 在上式中,A,B,x,y和z如下:0.995 <= A / B <= 1.020,0.0001 <= x <= 0.07,优选0.001 <= x <= 0.05,0.1 < = 0.3和0.0005 <= z <= 0.0 1,优选0.003 <= z <= 0.0 1。
摘要:
A dielectric ceramic composition comprises a main component including BaTiO3, a first subcomponent including BaZrO3, a second subcomponent including an oxide of Mg, a third subcomponent including an oxide of rare earth, a fourth subcomponent including an oxide of at least one element selected from Mn, Cr, Co and Fe, and a fifth subcomponent including an oxide of at least one element selected from Si, Al, Ge, B and Li. At least a part of dielectric particles constituting the dielectric ceramic composition comprises a surface diffusion structure comprised of a central layer and a diffusion layer therearound. CR and CRmax, respectively defined as a concentration of said “R” in a proximity point to a boundary face of the dielectric particle and a maximum concentration of the “R” in the diffusion layer, satisfy a relation of CRmax/CR>1. Also, CM and CMmax, respectively defined as a concentration of said Mg in a proximity point to a boundary face of the dielectric particle and a maximum concentration of Mg in the diffusion layer, satisfy a relation of CMmax/CM>1.