公开(公告)号：US08456800B2

公开(公告)日：2013-06-04

申请号：US13190033

申请日：2011-07-25

申请人： Toshihiko Kaneko ,  Ryutaro Yamazaki ,  Taisuke Masuko ,  Yusuke Sato ,  Yasushi Matsuyama ,  Yasuo Watanabe ,  Masakazu Hosono ,  Saori Takeda ,  Hirobumi Tanaka ,  Makoto Endo

发明人： Toshihiko Kaneko ,  Ryutaro Yamazaki ,  Taisuke Masuko ,  Yusuke Sato ,  Yasushi Matsuyama ,  Yasuo Watanabe ,  Masakazu Hosono ,  Saori Takeda ,  Hirobumi Tanaka ,  Makoto Endo

IPC分类号： H01G4/06 ,  H01G4/005

CPC分类号： H01G4/1227 ,  C04B35/4682 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3262 ,  C04B2235/3418 ,  C04B2235/5409 ,  C04B2235/6025 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/663 ,  C04B2235/80 ,  C04B2235/81 ,  H01G4/30

摘要： A multilayer ceramic electronic component comprises an element body obtained by stacking dielectric layers (thickness t1) and electrode layers (thickness t2). The dielectric layer includes a compound expressed by ABO3 (A includes Ba, and may include Ca or Sr; and B includes Ti, and may include Zr or Hf), and includes 0.75 to 2.0 moles of MgO, 0.4 to 1.0 mole of an oxide of Y, Dy, Ho and the like in terms of the oxide, and 0.4 to 0.8 mole of SiO2 per 100 moles of the compound. A segregation phase containing Mg is formed in at least a part of an electrode missing portion. Line coverage of the electrode layer is 60 to 90% and relations of 0.3 μm≦t1≦2.0 and 0.3 μm≦t2

摘要翻译： 多层陶瓷电子部件包括通过堆叠电介质层（厚度t1）和电极层（厚度t2）而获得的元件体。 电介质层包括由ABO 3表示的化合物（A包括Ba，并且可以包括Ca或Sr;并且B包括Ti，并且可以包括Zr或Hf），并且包括0.75至2.0摩尔的MgO，0.4至1.0摩尔的氧化物 的Y，Dy，Ho等，以及每100摩尔化合物为0.4〜0.8摩尔的SiO 2。 在电极缺失部分的至少一部分中形成含有Mg的偏析相。 电极层的线覆盖率为60〜90％，满足t1 = 2.0〜0.3μm，t2 <1.0μm的0.3μm的关系。

公开(公告)号：US08218788B2

公开(公告)日：2012-07-10

申请号：US12645203

申请日：2009-12-22

申请人： Hiraku Okumura ,  Hirobumi Tanaka

发明人： Hiraku Okumura ,  Hirobumi Tanaka

IPC分类号： H04B15/00 ,  H04R27/00 ,  H04R25/00

CPC分类号： H04R3/02 ,  H04R2430/03

摘要： An anti-feedback device includes an anti-feedback filter provided in a closed loop. The anti-feedback device down-samples a signal of specific band selected from an output signal of an adaptive target signal transfer system and a signal of the same band selected from an input signal of the transfer system, and a filtering coefficient of the adaptive filter is updated by use of the down-sampled signals. The filter controller controls a filtering characteristic of the anti-feedback filter so that a peak gain of a frequency of an amplitude characteristic within a specific band of a closed loop determined from the filtering coefficient of the adaptive filter is suppressed. Moreover, the filter controller estimates a gain of the closed loop outside the specific band from the amplitude characteristic in the specific band and controls the amount of suppression of the anti-feedback filter outside the band in accordance with a result of estimation.

摘要翻译： 反反馈装置包括设置在闭环中的反反馈滤波器。 反馈装置对从自适应目标信号传送系统的输出信号选择的特定频带的信号和从传送系统的输入信号选择的相同频带的信号进行下采样，并且自适应滤波器的滤波系数 通过使用下采样信号进行更新。 滤波器控制器控制反反馈滤波器的滤波特性，使得根据自适应滤波器的滤波系数确定的闭环的特定频带内的振幅特性的频率的峰值增益被抑制。 此外，滤波器控制器根据特定频带的幅度特性估计特定频带外的闭环的增益，并且根据估计结果控制频带外的反反馈滤波器的抑制量。

公开(公告)号：US20070018776A1

公开(公告)日：2007-01-25

申请号：US10558292

申请日：2003-06-18

申请人： Hirobumi Tanaka ,  Katsuhiko Igarashi

发明人： Hirobumi Tanaka ,  Katsuhiko Igarashi

IPC分类号： H01C7/13

CPC分类号： C03C8/20 ,  H01C17/06533

摘要： A resistor paste comprising glass material substantially free of lead, conductive material substantially free of lead, organic vehicle, and NiO and/or perovskite type crystal structured oxide. Oxides having perovskite type crystal structure can be CaTiO3, SrTiO3, BaTiO3, NiTiO3, MnTiO3, CoTiO3, FeTiO3, CuTiO3, MgTiO3 or so. A content of glass material is 60 vol % or more and less than 91 vol %, or 63 to 88 vol % or less, and a content of conductive material is 8 vol % or more and 32 vol % or less, and a content of said NiO is more than 0 vol % and 12 vol % or less.

摘要翻译： 一种电阻膏，其包含基本上不含铅的玻璃材料，基本上不含铅，有机载体和NiO和/或钙钛矿型晶体结构氧化物的导电材料。 具有钙钛矿型晶体结构的氧化物可以是CaTiO 3，SrTiO 3，BaTiO 3，NiTiO 3，MnTiO 3， Co 3 O 3，FeTiO 3 3，CuTiO 3 3，MgTiO 3 3等等。 玻璃材料的含量为60体积％以上且小于91体积％，或63〜88体积％以下，导电性物质的含量为8体积％以上且32体积％以下， 所述NiO为0体积％以上且12体积％以下。

公开(公告)号：US08311237B2

公开(公告)日：2012-11-13

申请号：US12360974

申请日：2009-01-28

申请人： Hirobumi Tanaka ,  Hiraku Okumura

发明人： Hirobumi Tanaka ,  Hiraku Okumura

IPC分类号： H04B15/00

CPC分类号： H04R3/02

摘要： A howling suppression apparatus suppresses a howling caused in an acoustic system including a sound collection device and a sound emission device. An estimation part generates an estimated signal by estimating a feedback sound reaching the sound collection device from the sound emission device. An adjustment part generates an estimated signal by adjusting the estimated signal. A spectrum subtraction part generates an acoustic signal using a result of subtracting a frequency spectrum of the estimated signal from a frequency spectrum of an acoustic signal. A filter part generates an acoustic signal by suppressing a component of a frequency band including a howling frequency F among the acoustic signal. An acoustic signal in which the acoustic signal is amplified by an amplifier is supplied to the sound emission device.

摘要翻译： 啸声抑制装置抑制在包括声音收集装置和声音发射装置的声学系统中引起的啸声。 估计部通过从声音发射装置估计到达声音采集装置的反馈声音来生成估计信号。 调整部通过调整估计信号来生成估计信号。 频谱减法部分使用从声信号的频谱中减去估计信号的频谱的结果来产生声信号。 滤波器部分通过抑制声信号中包括啸叫频率F的频带的分量来产生声信号。 将声音信号由放大器放大的声音信号提供给声音发射装置。

公开(公告)号：US20060043348A1

公开(公告)日：2006-03-02

申请号：US11213797

申请日：2005-08-30

申请人： Hirobumi Tanaka ,  Katsuhiko Igarashi

发明人： Hirobumi Tanaka ,  Katsuhiko Igarashi

IPC分类号： H01B1/02

CPC分类号： C03C3/066 ,  C03C3/064 ,  C03C3/097 ,  C03C8/02 ,  C03C8/14 ,  H01C7/003 ,  H01C17/06533

摘要： A glass composition for a thick-film resistor including at least one oxide selected from CaO, SrO, and BaO in an amount of 13 mol % to 45 mol %, B2O3 in 0 to 40 mol % (however, not including 0), SiO2 in 17 mol % to 72 mol % (however, not including 72 mol %), ZrO2 in 0 to 10 mol % (however, not including 0), and at least one oxide selected from Ta2O5 and Nb2O5 in 0 to 10 mol % (however, not including 0), a thick-film resistor paste obtained by mixing this glass composition with a conductive material and organic vehicle, a thick-film resistor obtained by printing and firing this paste and thereby being lead-free, superior in TCR and STOL, and high in resistance, and an electronic device having this thick-film resistor.

摘要翻译： 一种用于厚膜电阻器的玻璃组合物，其包含选自CaO，SrO和BaO中的至少一种氧化物，其量为13mol％至45mol％，B 2 O 3 O 3， 0〜40摩尔％（但不包括0），17摩尔％〜72摩尔％的SiO 2（不含72摩尔％），ZrO 2 0〜10摩尔％（但不包括0）和至少一种选自Ta 2 O 5和Nb 2 O 3的氧化物 0〜10摩尔％（但不包括0），通过将该玻璃组合物与有机载体混合而获得的厚膜电阻膏，得到的厚膜电阻体 通过印刷和烧制该糊料，从而无铅，在TCR和STOL以及高电阻性方面优异，并且具有该厚膜电阻器的电子器件。

公开(公告)号：US20120162858A1

公开(公告)日：2012-06-28

申请号：US13300952

申请日：2011-11-21

申请人： Hirobumi TANAKA ,  Makoto ENDO ,  Satoko UEDA ,  Daisuke UEDA ,  Shogo MUROSAWA ,  Daisuke YOSHIDA ,  Kenta ONO ,  Minoru OGASAWARA ,  Tatsuya KIKUCHI

发明人： Hirobumi TANAKA ,  Makoto ENDO ,  Satoko UEDA ,  Daisuke UEDA ,  Shogo MUROSAWA ,  Daisuke YOSHIDA ,  Kenta ONO ,  Minoru OGASAWARA ,  Tatsuya KIKUCHI

IPC分类号： H01G4/12

CPC分类号： H01G4/1227 ,  H01G4/1281 ,  H01G4/30

摘要： A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO3 (A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO2.

摘要翻译： 一种多层陶瓷电子部件，其特征在于，具有层叠有电介质层和内部电极层的元件体。 电介质层由介电陶瓷组合物构成，包括： 具有由式ABO 3表示的钙钛矿结构的化合物（A是选自Ba，Ca和Sr中的至少一种; B是选自Ti，Zr和Hf中的至少一种）; Mg的氧化物; 包括Sc和Y的稀土元素的氧化物; 和包含Si的氧化物。 电介质陶瓷组合物包含存在于电介质颗粒之间的多个电介质颗粒和晶界。 在晶界中，当Mg和Si的含量比分别设定为D（Mg）和D（Si）时，D（Mg）以MgO计为0.2〜1.8重量％，D（Si）为0.4〜8.0 重量％。

公开(公告)号：US20120026642A1

公开(公告)日：2012-02-02

申请号：US13190033

申请日：2011-07-25

申请人： Toshihiko KANEKO ,  Ryutaro YAMAZAKI ,  Taisuke MASUKO ,  Yusuke SATO ,  Yasushi MATSUYAMA ,  Yasuo WATANABE ,  Masakazu HOSONO ,  Saori TAKEDA ,  Hirobumi TANAKA ,  Makoto ENDO

发明人： Toshihiko KANEKO ,  Ryutaro YAMAZAKI ,  Taisuke MASUKO ,  Yusuke SATO ,  Yasushi MATSUYAMA ,  Yasuo WATANABE ,  Masakazu HOSONO ,  Saori TAKEDA ,  Hirobumi TANAKA ,  Makoto ENDO

IPC分类号： H01G4/12

CPC分类号： H01G4/1227 ,  C04B35/4682 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3262 ,  C04B2235/3418 ,  C04B2235/5409 ,  C04B2235/6025 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/663 ,  C04B2235/80 ,  C04B2235/81 ,  H01G4/30

摘要： Disclosed is a multilayer ceramic electronic component, comprising an element body obtained by stacking dielectric layers (thickness t1) and electrode layers (thickness t2). The dielectric layer (2) includes a compound expressed by ABO3 (A includes Ba, and may include Ca or Sr; and B includes Ti, and may include Zr or Hf), and includes 0.75 to 2.0 moles of MgO, 0.4 to 1.0 mole of an oxide of Y, Dy, Ho and the like in terms of the oxide, and 0.4 to 0.8 mole of SiO2 per 100 moles of the compound. A segregation phase (20) containing Mg is formed in at least a part of an electrode missing portion (30), where the electrode layer is supposed to be formed but no electrode layer is formed. Line coverage of the electrode layer (3) is 60 to 90% and relations of 0.3≦t1≦2.0 and 0.3≦t2

摘要翻译： 公开了一种多层陶瓷电子部件，其包括通过堆叠电介质层（厚度t1）和电极层（厚度t2）而获得的元件体。 电介质层（2）包括由ABO 3表示的化合物（A包括Ba，并且可以包括Ca或Sr;并且B包括Ti，并且可以包括Zr或Hf），并且包括0.75至2.0摩尔的MgO，0.4至1.0摩尔 以氧化物换算Y，Dy，Ho等的氧化物，每100摩尔化合物为0.4〜0.8摩尔的SiO 2。 在电极缺损部分（30）的至少一部分中形成含有Mg的偏析相（20），其中假定形成电极层，但不形成电极层。 电极层（3）的线覆盖率为60〜90％，满足0.3＆nlE; t1＆nlE; 2.0和0.3＆nlE; t2 <1.0的关系。

公开(公告)号：US20100166213A1

公开(公告)日：2010-07-01

申请号：US12645203

申请日：2009-12-22

申请人： Hiraku OKUMURA ,  Hirobumi Tanaka

发明人： Hiraku OKUMURA ,  Hirobumi Tanaka

IPC分类号： H04B15/00

CPC分类号： H04R3/02 ,  H04R2430/03

摘要： An anti-feedback device includes an anti-feedback filter provided in a closed loop, The anti-feedback device down-samples a signal of specific band selected from an output signal of an adaptive target signal transfer system and a signal of the same band selected from an input signal of the transfer system, and a filtering coefficient of the adaptive filter is updated by use of the down-sampled signals. The filter controller controls a filtering characteristic of the anti-feedback filter so that a peak gain of a frequency of an amplitude characteristic within a specific band of a closed loop determined from the filtering coefficient of the adaptive filter is suppressed. Moreover, the filter controller estimates a gain of the closed loop outside the specific band from the amplitude characteristic in the specific band and controls the amount of suppression of the anti-feedback filter, outside the band in accordance with a result of estimation.

摘要翻译： 反反馈装置包括设置在闭环中的反反馈滤波器。反反馈装置对从自适应目标信号传送系统的输出信号选择的特定频带的信号和选择的相同频带的信号进行下采样 并且通过使用下采样信号来更新自适应滤波器的滤波系数。 滤波器控制器控制反反馈滤波器的滤波特性，使得根据自适应滤波器的滤波系数确定的闭环的特定频带内的振幅特性的频率的峰值增益被抑制。 此外，滤波器控制器根据特定频带的幅度特性估计特定频带外的闭环的增益，并根据估计结果控制频带外的反反馈滤波器的抑制量。

公开(公告)号：US07544314B2

公开(公告)日：2009-06-09

申请号：US11213797

申请日：2005-08-30

申请人： Hirobumi Tanaka ,  Katsuhiko Igarashi

发明人： Hirobumi Tanaka ,  Katsuhiko Igarashi

IPC分类号： H01B1/00

CPC分类号： C03C3/066 ,  C03C3/064 ,  C03C3/097 ,  C03C8/02 ,  C03C8/14 ,  H01C7/003 ,  H01C17/06533

摘要： A glass composition for a thick-film resistor including at least one oxide selected from CaO, SrO, and BaO in an amount of 13 mol % to 45 mol %, B2O3 in 0 to 40 mol % (however, not including 0), SiO2 in 17 mol % to 72 mol % (however, not including 72 mol %), ZrO2 in 0 to 10 mol % (however, not including 0), and at least one oxide selected from Ta2O5 and Nb2O5 in 0 to 10 mol % (however, not including 0), a thick-film resistor paste obtained by mixing this glass composition with a conductive material and organic vehicle, a thick-film resistor obtained by printing and firing this paste and thereby being lead-free, superior in TCR and STOL, and high in resistance, and an electronic device having this thick-film resistor.

摘要翻译： 含有13mol％〜45mol％的选自CaO，SrO，BaO的至少一种氧化物的厚膜电阻用玻璃组合物，0〜40mol％的B 2 O（但不包括0），SiO 2 17摩尔％〜72摩尔％（但不包括72摩尔％），0〜10摩尔％的ZrO 2（但不包括0）和0〜10摩尔％的选自Ta 2 O 5和Nb 2 O 5的至少一种氧化物 然而，不包括0），通过将该玻璃组合物与导电材料和有机载体混合获得的厚膜电阻器糊料，通过印刷和烧制该糊料而获得的厚膜电阻器，从而无铅，在TCR和 STOL和高电阻，以及具有该厚膜电阻器的电子器件。

公开(公告)号：US3958044A

公开(公告)日：1976-05-18

申请号：US438533

申请日：1974-02-01

申请人： Tadashi Yamaguchi ,  Takayuki Ono ,  Hirobumi Tanaka ,  Hiroshi Hoshi ,  Michio Hirakawa ,  Isao Watanabe

发明人： Tadashi Yamaguchi ,  Takayuki Ono ,  Hirobumi Tanaka ,  Hiroshi Hoshi ,  Michio Hirakawa ,  Isao Watanabe

IPC分类号： B01J2/00 ,  C08F2/44 ,  B05D7/00

CPC分类号： B01J2/006 ,  B01J2/003 ,  Y10T428/2998

摘要： A transition metal compound in powdered form or a mixture of a transition metal compound and other inorganic compounds in powdered form can be effectively coated with a polymer by contacting such powder with a vinyl monomer in the presence of hydrogen sulfite ions (HSO.sub.3 .sup.-).

摘要翻译： 粉末形式的过渡金属化合物或过渡金属化合物和粉末形式的其它无机化合物的混合物可以通过在亚硫酸氢离子（HSO 3 - ）存在下使这种粉末与乙烯基单体接触而有效地涂覆聚合物， 。