公开(公告)号：US20110007049A1

公开(公告)日：2011-01-13

申请号：US12736158

申请日：2009-01-30

申请人： Tetsuo Kikuchi ,  Shinya Tanaka ,  Hajime Imai ,  Hideki Kitagawa ,  Chikao Yamasaki ,  Yoshiharu Kataoka

发明人： Tetsuo Kikuchi ,  Shinya Tanaka ,  Hajime Imai ,  Hideki Kitagawa ,  Chikao Yamasaki ,  Yoshiharu Kataoka

IPC分类号： G09G5/00 ,  H01L33/08 ,  H01L33/16

CPC分类号： H01L27/124 ,  G02F1/1368 ,  G09G3/3677 ,  G09G2310/0286 ,  H01L27/1255

摘要： A TFT includes, in at least one embodiment, a capacitor formed: so as to have a region where a first capacitor electrode connected to a source electrode and a second capacitor electrode connected to a gate electrode are arranged to be stacked in a thickness direction and mutually opposed across a first dielectric layer therebetween; and so as to have a region where the first capacitor electrode and a third capacitor electrode connected to the gate electrode are arranged to be stacked in the thickness direction and mutually opposed across a second dielectric layer therebetween with a coupling between the first capacitor electrode and the third capacitor electrode and a coupling between the first capacitor electrode and the second capacitor electrode formed over mutually opposite faces of the first capacitor electrode. This realizes a TFT which can save a footprint of a capacitor connected to a TFT body section.

摘要翻译： 在至少一个实施例中，TFT包括形成的电容器，以便具有连接到源电极的第一电容器电极和连接到栅电极的第二电容器电极被布置成在厚度方向上堆叠的区域， 在它们之间的第一电介质层彼此相对; 并且具有第一电容器电极和连接到栅电极的第三电容器电极被布置成在厚度方向上堆叠并且在其间的第二介电层相互相对的区域，其中第一电容器电极和第一电容器电极之间的耦合 第三电容器电极以及在第一电容器电极的彼此相对的面上形成的第一电容器电极和第二电容器电极之间的耦合。 这实现了TFT，其可以节省连接到TFT主体部分的电容器的占位面积。

公开(公告)号：US20110012880A1

公开(公告)日：2011-01-20

申请号：US12736222

申请日：2009-01-27

申请人： Shinya Tanaka ,  Tetsuo Kikuchi ,  Hajime Imai ,  Hideki Kitagawa ,  Yoshiharu Kataoka

发明人： Shinya Tanaka ,  Tetsuo Kikuchi ,  Hajime Imai ,  Hideki Kitagawa ,  Yoshiharu Kataoka

IPC分类号： G06F3/038 ,  H01L29/94 ,  H01L21/326 ,  G11C19/00

CPC分类号： H01L27/12 ,  G09G3/3677 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/13 ,  H01L28/86

摘要： In at least one embodiment, a TFT includes: a first capacitor formed of a first capacitor electrode connected to a source electrode and a second capacitor electrode; a second capacitor formed of a third capacitor electrode and a fourth capacitor electrode; a first lead-out line; a second lead-out line connected to a gate electrode; a third lead-out line; a fourth lead-out line; a first interconnection; and a second interconnection. This realizes a TFT which can be easily saved from being a defective product even if leakage occurs in a capacitor connected to a TFT body section.

摘要翻译： 在至少一个实施例中，TFT包括：由连接到源电极和第二电容器电极的第一电容器电极形成的第一电容器; 由第三电容器电极和第四电容器电极形成的第二电容器; 第一个引出线; 连接到栅电极的第二引出线; 第三个引出线; 第四个引出线; 第一个互连; 和第二互连。 这实现了即使在连接到TFT主体部分的电容器中发生泄漏，也可以容易地将其从劣质产品中保存下来。

公开(公告)号：US08946719B2

公开(公告)日：2015-02-03

申请号：US12736222

申请日：2009-01-27

申请人： Shinya Tanaka ,  Tetsuo Kikuchi ,  Hajime Imai ,  Hideki Kitagawa ,  Yoshiharu Kataoka

发明人： Shinya Tanaka ,  Tetsuo Kikuchi ,  Hajime Imai ,  Hideki Kitagawa ,  Yoshiharu Kataoka

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L49/02 ,  H01L27/13

CPC分类号： H01L27/12 ,  G09G3/3677 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/13 ,  H01L28/86

摘要： In at least one embodiment, a TFT includes: a first capacitor formed of a first capacitor electrode connected to a source electrode and a second capacitor electrode; a second capacitor formed of a third capacitor electrode and a fourth capacitor electrode; a first lead-out line; a second lead-out line connected to a gate electrode; a third lead-out line; a fourth lead-out line; a first interconnection; and a second interconnection. This realizes a TFT which can be easily saved from being a defective product even if leakage occurs in a capacitor connected to a TFT body section.

摘要翻译： 在至少一个实施例中，TFT包括：由连接到源电极和第二电容器电极的第一电容器电极形成的第一电容器; 由第三电容器电极和第四电容器电极形成的第二电容器; 第一个引出线; 连接到栅电极的第二引出线; 第三个引出线; 第四个引出线; 第一个互连; 和第二互连。 这实现了即使在连接到TFT主体部分的电容器中发生泄漏，也可以容易地将其从劣质产品中保存下来。

公开(公告)号：US08963152B2

公开(公告)日：2015-02-24

申请号：US12867510

申请日：2008-10-09

申请人： Shinya Tanaka ,  Tetsuo Kikuchi ,  Hajime Imai ,  Hideki Kitagawa ,  Yoshiharu Kataoka

发明人： Shinya Tanaka ,  Tetsuo Kikuchi ,  Hajime Imai ,  Hideki Kitagawa ,  Yoshiharu Kataoka

IPC分类号： H01L29/41 ,  H01L27/12 ,  G09G3/36

CPC分类号： H01L27/1214 ,  G02F2201/124 ,  G09G3/3648 ,  G09G2310/0297 ,  H01L27/124

摘要： A distance (d1) from an edge of a first region (R) at places (D) where branch electrodes (4b) extending, which branch off from an electrode line (4a) of a second source/drain electrode (4), start to overlap with a first region (R) to the electrode line (4a) is 5 μm or more. This realizes a TFT including a comb-shaped source/drain structure that enables easy repair of a source-drain leakage.

摘要翻译： 在从第二源极/漏极（4）的电极线（4a）延伸的分支电极（4b）延伸的位置（D）处的第一区域（R）的边缘的距离（d1）开始 与电极线（4a）的第一区域（R）重叠为5μm以上。 这实现了包括梳状源极/漏极结构的TFT，其能够容易地修复源极漏极泄漏。

公开(公告)号：US20110001736A1

公开(公告)日：2011-01-06

申请号：US12867510

申请日：2008-10-09

申请人： Shinya Tanaka ,  Tetsuo Kikuchi ,  Hajime Imai ,  Hideki Kitagawa ,  Yoshiharu Kataoka

发明人： Shinya Tanaka ,  Tetsuo Kikuchi ,  Hajime Imai ,  Hideki Kitagawa ,  Yoshiharu Kataoka

IPC分类号： G09G5/00 ,  H01L29/786

CPC分类号： H01L27/1214 ,  G02F2201/124 ,  G09G3/3648 ,  G09G2310/0297 ,  H01L27/124

摘要： A distance (d1) from an edge of a first region (R) at places (D) where branch electrodes (4b) extending, which branch off from an electrode line (4a) of a second source/drain electrode (4), start to overlap with a first region (R) to the electrode line (4a) is 5 μm or more. This realizes a TFT including a comb-shaped source/drain structure that enables easy repair of a source-drain leakage.

摘要翻译： 在从第二源极/漏极（4）的电极线（4a）延伸的分支电极（4b）延伸的位置（D）处的第一区域（R）的边缘的距离（d1）开始 与电极线（4a）的第一区域（R）重叠为5μm以上。 这实现了包括梳状源极/漏极结构的TFT，其能够容易地修复源极漏极泄漏。

公开(公告)号：US20100053517A1

公开(公告)日：2010-03-04

申请号：US12595782

申请日：2007-12-27

申请人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara ,  Junya Shimada ,  Mitsunori Imade ,  Yoshiharu Kataoka

发明人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara ,  Junya Shimada ,  Mitsunori Imade ,  Yoshiharu Kataoka

IPC分类号： G02F1/1335 ,  H01L21/77

CPC分类号： G02F1/133555 ,  G02F1/133553 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/134372 ,  G02F2001/136231 ,  G02F2001/136236

摘要： Transflective-type and reflection type liquid crystal display devices having a high image quality are provided with a good production efficiency.A liquid crystal display device according to the present invention is a liquid crystal display device which includes; a first substrate and a second substrate between which liquid crystal is interposed; a first electrode and a second electrode formed on the first substrate for applying a voltage for controlling an orientation of the liquid crystal; a transistor having an electrode which is electrically connected to the first electrode; a metal layer being formed on the first substrate and including a protrusion, a recess, or an aperture; and a reflective layer formed above the metal layer on the first substrate for reflecting incident light toward a display surface. The metal layer is made of a same material as that of a gate electrode of the transistor. The reflective layer includes a protrusion, a recess, or a level difference which is formed in accordance with a protrusion, a recess, or an aperture of the metal layer.

摘要翻译： 具有高图像质量的透反射型和反射型液晶显示装置具有良好的生产效率。 根据本发明的液晶显示装置是一种液晶显示装置，包括： 第一基板和第二基板，液晶插入其间; 第一电极和第二电极，形成在第一基板上，用于施加用于控制液晶取向的电压; 具有电连接到第一电极的电极的晶体管; 金属层形成在第一基板上并且包括突起，凹部或孔; 以及反射层，形成在第一基板上的金属层的上方，用于将入射光反射到显示面。 金属层由与晶体管的栅电极相同的材料制成。 反射层包括根据金属层的突起，凹部或孔形成的突起，凹部或水平差。

公开(公告)号：US08659726B2

公开(公告)日：2014-02-25

申请号：US12595782

申请日：2007-12-27

申请人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara ,  Junya Shimada ,  Mitsunori Imade ,  Yoshiharu Kataoka

发明人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara ,  Junya Shimada ,  Mitsunori Imade ,  Yoshiharu Kataoka

IPC分类号： G02F1/1335 ,  G02F1/136

CPC分类号： G02F1/133555 ,  G02F1/133553 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/134372 ,  G02F2001/136231 ,  G02F2001/136236

摘要： Transflective-type and reflection type liquid crystal display devices having a high image quality are provided with a good production efficiency.A liquid crystal display device according to the present invention is a liquid crystal display device which includes; a first substrate and a second substrate between which liquid crystal is interposed; a first electrode and a second electrode formed on the first substrate for applying a voltage for controlling an orientation of the liquid crystal; a transistor having an electrode which is electrically connected to the first electrode; a metal layer being formed on the first substrate and including a protrusion, a recess, or an aperture; and a reflective layer formed above the metal layer on the first substrate for reflecting incident light toward a display surface. The metal layer is made of a same material as that of a gate electrode of the transistor. The reflective layer includes a protrusion, a recess, or a level difference which is formed in accordance with a protrusion, a recess, or an aperture of the metal layer.

摘要翻译： 具有高图像质量的透反射型和反射型液晶显示装置具有良好的生产效率。 根据本发明的液晶显示装置是一种液晶显示装置，包括： 第一基板和第二基板，液晶插入其间; 第一电极和第二电极，形成在第一基板上，用于施加用于控制液晶取向的电压; 具有电连接到第一电极的电极的晶体管; 金属层形成在第一基板上并且包括突起，凹部或孔; 以及反射层，形成在第一基板上的金属层的上方，用于将入射光反射到显示面。 金属层由与晶体管的栅电极相同的材料制成。 反射层包括根据金属层的突起，凹部或孔形成的突起，凹部或水平差。

公开(公告)号：US20100253658A1

公开(公告)日：2010-10-07

申请号：US12740311

申请日：2008-09-09

申请人： Shinya Tanaka ,  Tetsuo Kikuchi ,  Hajime Imai ,  Yoshiharu Kataoka

发明人： Shinya Tanaka ,  Tetsuo Kikuchi ,  Hajime Imai ,  Yoshiharu Kataoka

IPC分类号： G09G5/00 ,  G02F1/13 ,  G02F1/1333 ,  G02F1/1339

CPC分类号： G02F1/1339 ,  G02F1/13454 ,  G02F2201/50

摘要： The present invention provides a display device in which a frame region is reduced while preventing decrease in reliability and a method for manufacturing the same. The present invention is a display device comprising: a display panel including a first substrate, a second substrate, and a sealing member positioned between the first substrate and the second substrate, wherein the display panel includes at least a part of a circuit unit and a moisture blocking film in a region overlapping with the sealing member on the first substrate, and the moisture blocking film is provided in a region other than a display region and interposed between the circuit unit and the sealing member.

摘要翻译： 本发明提供了一种显示装置，其中框架区域被减小同时防止可靠性的降低及其制造方法。 本发明是一种显示装置，包括：显示面板，包括第一基板，第二基板和位于第一基板和第二基板之间的密封构件，其中显示面板包括电路单元的至少一部分和 在与第一基板上的密封构件重叠的区域中的防潮膜，并且防潮膜设置在除显示区域之外的区域中，并插入在电路单元和密封构件之间。

公开(公告)号：US20130092927A1

公开(公告)日：2013-04-18

申请号：US13639138

申请日：2011-01-17

申请人： Atsuhito Murai ,  Shinya Tanaka ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

发明人： Atsuhito Murai ,  Shinya Tanaka ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

IPC分类号： H01L27/15

CPC分类号： H01L27/15 ,  G02F1/13318 ,  G02F1/13338 ,  G02F1/136204 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

摘要： The circuit board (1) of the present invention includes a plurality of transistor elements provided on a single insulating substrate (2) for respective pixels that are two-dimensionally arranged or respective pixels in a group of a predetermined number of the pixels. At least one of the plurality of transistor elements is an oxide TFT (10) having a channel layer (11) formed by an oxide semiconductor, and at least another of the plurality of transistor elements is an a-Si TFT (20) having a channel layer (21) formed by, for example, an amorphous silicon semiconductor. Each of the oxide TFT (10) and the a-Si TFT (20) is a bottom-gate transistor.

摘要翻译： 本发明的电路板（1）包括设置在单个绝缘基板（2）上的多个晶体管元件，用于各个像素的二维排列或者在一组预定数量的像素中的各个像素。 多个晶体管元件中的至少一个是具有由氧化物半导体形成的沟道层（11）的氧化物TFT（10），并且多个晶体管元件中的至少另一个是具有 沟道层（21）由例如非晶硅半导体形成。 氧化物TFT（10）和a-Si TFT（20）中的每一个都是底栅晶体管。

公开(公告)号：US08581257B2

公开(公告)日：2013-11-12

申请号：US13639138

申请日：2011-01-17

申请人： Atsuhito Murai ,  Shinya Tanaka ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

发明人： Atsuhito Murai ,  Shinya Tanaka ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： H01L27/15 ,  G02F1/13318 ,  G02F1/13338 ,  G02F1/136204 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

摘要： The circuit board (1) of the present invention includes a plurality of transistor elements provided on a single insulating substrate (2) for respective pixels that are two-dimensionally arranged or respective pixels in a group of a predetermined number of the pixels. At least one of the plurality of transistor elements is an oxide TFT (10) having a channel layer (11) formed by an oxide semiconductor, and at least another of the plurality of transistor elements is an a-Si TFT (20) having a channel layer (21) formed by, for example, an amorphous silicon semiconductor. Each of the oxide TFT (10) and the a-Si TFT (20) is a bottom-gate transistor.

摘要翻译： 本发明的电路板（1）包括设置在单个绝缘基板（2）上的多个晶体管元件，用于各个像素的二维排列或者在一组预定数量的像素中的各个像素。 多个晶体管元件中的至少一个是具有由氧化物半导体形成的沟道层（11）的氧化物TFT（10），并且多个晶体管元件中的至少另一个是具有 沟道层（21）由例如非晶硅半导体形成。 氧化物TFT（10）和a-Si TFT（20）中的每一个都是底栅晶体管。