公开(公告)号：US08581257B2

公开(公告)日：2013-11-12

申请号：US13639138

申请日：2011-01-17

申请人： Atsuhito Murai ,  Shinya Tanaka ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

发明人： Atsuhito Murai ,  Shinya Tanaka ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： H01L27/15 ,  G02F1/13318 ,  G02F1/13338 ,  G02F1/136204 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

摘要： The circuit board (1) of the present invention includes a plurality of transistor elements provided on a single insulating substrate (2) for respective pixels that are two-dimensionally arranged or respective pixels in a group of a predetermined number of the pixels. At least one of the plurality of transistor elements is an oxide TFT (10) having a channel layer (11) formed by an oxide semiconductor, and at least another of the plurality of transistor elements is an a-Si TFT (20) having a channel layer (21) formed by, for example, an amorphous silicon semiconductor. Each of the oxide TFT (10) and the a-Si TFT (20) is a bottom-gate transistor.

摘要翻译： 本发明的电路板（1）包括设置在单个绝缘基板（2）上的多个晶体管元件，用于各个像素的二维排列或者在一组预定数量的像素中的各个像素。 多个晶体管元件中的至少一个是具有由氧化物半导体形成的沟道层（11）的氧化物TFT（10），并且多个晶体管元件中的至少另一个是具有 沟道层（21）由例如非晶硅半导体形成。 氧化物TFT（10）和a-Si TFT（20）中的每一个都是底栅晶体管。

公开(公告)号：US20130092927A1

公开(公告)日：2013-04-18

申请号：US13639138

申请日：2011-01-17

申请人： Atsuhito Murai ,  Shinya Tanaka ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

发明人： Atsuhito Murai ,  Shinya Tanaka ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

IPC分类号： H01L27/15

CPC分类号： H01L27/15 ,  G02F1/13318 ,  G02F1/13338 ,  G02F1/136204 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

摘要： The circuit board (1) of the present invention includes a plurality of transistor elements provided on a single insulating substrate (2) for respective pixels that are two-dimensionally arranged or respective pixels in a group of a predetermined number of the pixels. At least one of the plurality of transistor elements is an oxide TFT (10) having a channel layer (11) formed by an oxide semiconductor, and at least another of the plurality of transistor elements is an a-Si TFT (20) having a channel layer (21) formed by, for example, an amorphous silicon semiconductor. Each of the oxide TFT (10) and the a-Si TFT (20) is a bottom-gate transistor.

摘要翻译： 本发明的电路板（1）包括设置在单个绝缘基板（2）上的多个晶体管元件，用于各个像素的二维排列或者在一组预定数量的像素中的各个像素。 多个晶体管元件中的至少一个是具有由氧化物半导体形成的沟道层（11）的氧化物TFT（10），并且多个晶体管元件中的至少另一个是具有 沟道层（21）由例如非晶硅半导体形成。 氧化物TFT（10）和a-Si TFT（20）中的每一个都是底栅晶体管。

公开(公告)号：US20130146866A1

公开(公告)日：2013-06-13

申请号：US13643652

申请日：2011-03-02

申请人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

发明人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

IPC分类号： H01L27/12

CPC分类号： H01L27/1251 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1446 ,  H01L27/14632 ,  H01L27/14678

摘要： A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.

摘要翻译： 电路板（1）在绝缘基板（2）上包括多个晶体管元件。 多个晶体管元件中的至少一个是氧化物TFT（10），其包括作为沟道层（11）的氧化物半导体。 多个晶体管元件中的至少一个是与作为电路元件的功能的氧化物TFT（10）不同的a-SiTFT（20）（i），（ii）包括作为沟道层（21）的无定形 硅半导体。 氧化物TFT（10）是顶栅晶体管，并且a-SiTFT（20）是底栅晶体管。 这提供：一种配置，其可以（a）增强配备有作为电路部件的各自功能不同的TFT的电路板的性能，（b）减小安装TFT所需的面积; 以及电路基板的制造方法。

公开(公告)号：US09111810B2

公开(公告)日：2015-08-18

申请号：US13643652

申请日：2011-03-02

申请人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

发明人： Hideki Kitagawa ,  Shinya Tanaka ,  Hajime Imai ,  Atsuhito Murai ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Kazunori Morimoto ,  Junya Shimada ,  Jun Nishimura

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L27/146 ,  H01L27/144

CPC分类号： H01L27/1251 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1446 ,  H01L27/14632 ,  H01L27/14678

摘要： A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.

摘要翻译： 电路板（1）在绝缘基板（2）上包括多个晶体管元件。 多个晶体管元件中的至少一个是氧化物TFT（10），其包括作为沟道层（11）的氧化物半导体。 多个晶体管元件中的至少一个是与作为电路元件的功能的氧化物TFT（10）不同的a-SiTFT（20）（i），（ii）包括作为沟道层（21）的无定形 硅半导体。 氧化物TFT（10）是顶栅晶体管，并且a-SiTFT（20）是底栅晶体管。 这提供：一种配置，其可以（a）增强配备有作为电路部件的各自功能不同的TFT的电路板的性能，（b）减小安装TFT所需的面积; 以及电路基板的制造方法。

公开(公告)号：US20130214279A1

公开(公告)日：2013-08-22

申请号：US13695082

申请日：2011-02-23

申请人： Jun Nishimura ,  Hideki Kitagawa ,  Atsuhito Murai ,  Hajime Imai ,  Shinya Tanaka ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Junya Shimada ,  Kazunori Morimoto

发明人： Jun Nishimura ,  Hideki Kitagawa ,  Atsuhito Murai ,  Hajime Imai ,  Shinya Tanaka ,  Mitsunori Imade ,  Tetsuo Kikuchi ,  Junya Shimada ,  Kazunori Morimoto

IPC分类号： H01L27/02

CPC分类号： H01L29/78663 ,  G02F1/13338 ,  G02F1/13624 ,  G06F3/0412 ,  H01L27/0207 ,  H01L27/0705 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/78633 ,  H01L29/7869

摘要： A source and drain electrode layer (3s/3d) of an oxide TFT element (3) is formed by a first conductive layer. A gate electrode (3g) of the oxide TFT element (3) and a gate electrode (5g) of an a-Si TFT element (5) are formed by a single conductive layer, that is, a second conductive layer. A source and drain electrode layer (5s/5d) of the a-Si TFT element (5) is formed by a third conductive layer. The third conductive layer is formed above the second conductive layer in a thickness direction in which each conductive layer is stacked on an insulating substrate (2). Further, the first conductive layer is formed below the second conductive layer in the thickness direction. Therefore, it is possible to provide a circuit board that can have an improved degree of integration of transistor elements formed on the insulating substrate.

摘要翻译： 氧化物TFT元件（3）的源极和漏极电极层（3s / 3d）由第一导电层形成。 氧化物TFT元件（3）的栅极（3g）和a-Si TFT元件（5）的栅电极（5g）由单个导电层即第二导电层形成。 a-Si TFT元件（5）的源极和漏极电极层（5s / 5d）由第三导电层形成。 第三导电层形成在第二导电层上方的厚度方向上，其中每个导电层堆叠在绝缘基板（2）上。 此外，第一导电层在厚度方向上形成在第二导电层的下方。 因此，可以提供可以使形成在绝缘基板上的晶体管元件的集成度提高的电路板。

公开(公告)号：US20100315578A1

公开(公告)日：2010-12-16

申请号：US12446071

申请日：2007-09-07

申请人： Yoshihito Hara ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Junya Shimada

发明人： Yoshihito Hara ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Hajime Imai ,  Mitsunori Imade ,  Junya Shimada

IPC分类号： G02F1/1335 ,  G02F1/13

CPC分类号： G02F1/133553

摘要： A transflective-type and a reflection-type liquid crystal display device having a high reflection efficiency and a high image quality are provided. A liquid crystal display device of the present invention is a liquid crystal display device including a reflection region for reflecting incident light toward a display surface, wherein the reflection region includes a metal layer, an insulating layer formed on the metal layer, a semiconductor layer formed on the insulating layer, and a reflective layer formed on the semiconductor layer; a plurality of recesses are formed in at least one of the metal layer, the insulating layer and the semiconductor layer; a plurality of dents are formed in the reflective layer in the reflection region according to the plurality of recesses; and a shortest distance a between edge portions of at least two of the plurality of recesses is 4 μm or less.

摘要翻译： 提供了具有高反射效率和高图像质量的透反射型和反射型液晶显示装置。 本发明的液晶显示装置是具有将入射光反射到显示面的反射区域的液晶显示装置，其中反射区域包括金属层，形成在金属层上的绝缘层，形成的半导体层 在绝缘层上形成反射层; 在金属层，绝缘层和半导体层中的至少一个中形成多个凹部; 根据多个凹部，在反射区域中的反射层中形成多个凹痕; 并且所述多个凹部中的至少两个凹部的边缘部之间的最短距离a为4μm以下。

公开(公告)号：US20100053517A1

公开(公告)日：2010-03-04

申请号：US12595782

申请日：2007-12-27

申请人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara ,  Junya Shimada ,  Mitsunori Imade ,  Yoshiharu Kataoka

发明人： Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Yoshihito Hara ,  Junya Shimada ,  Mitsunori Imade ,  Yoshiharu Kataoka

IPC分类号： G02F1/1335 ,  H01L21/77

CPC分类号： G02F1/133555 ,  G02F1/133553 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/134372 ,  G02F2001/136231 ,  G02F2001/136236

摘要： Transflective-type and reflection type liquid crystal display devices having a high image quality are provided with a good production efficiency.A liquid crystal display device according to the present invention is a liquid crystal display device which includes; a first substrate and a second substrate between which liquid crystal is interposed; a first electrode and a second electrode formed on the first substrate for applying a voltage for controlling an orientation of the liquid crystal; a transistor having an electrode which is electrically connected to the first electrode; a metal layer being formed on the first substrate and including a protrusion, a recess, or an aperture; and a reflective layer formed above the metal layer on the first substrate for reflecting incident light toward a display surface. The metal layer is made of a same material as that of a gate electrode of the transistor. The reflective layer includes a protrusion, a recess, or a level difference which is formed in accordance with a protrusion, a recess, or an aperture of the metal layer.

摘要翻译： 具有高图像质量的透反射型和反射型液晶显示装置具有良好的生产效率。 根据本发明的液晶显示装置是一种液晶显示装置，包括： 第一基板和第二基板，液晶插入其间; 第一电极和第二电极，形成在第一基板上，用于施加用于控制液晶取向的电压; 具有电连接到第一电极的电极的晶体管; 金属层形成在第一基板上并且包括突起，凹部或孔; 以及反射层，形成在第一基板上的金属层的上方，用于将入射光反射到显示面。 金属层由与晶体管的栅电极相同的材料制成。 反射层包括根据金属层的突起，凹部或孔形成的突起，凹部或水平差。

公开(公告)号：US07995167B2

公开(公告)日：2011-08-09

申请号：US12446099

申请日：2007-10-16

申请人： Mitsunori Imade ,  Hajime Imai ,  Hideki Kitagawa ,  Tetsuo Kikuchi ,  Yoshihito Hara ,  Junya Shimada

发明人： Mitsunori Imade ,  Hajime Imai ,  Hideki Kitagawa ,  Tetsuo Kikuchi ,  Yoshihito Hara ,  Junya Shimada

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133553 ,  G02F1/136227 ,  G02F2201/34

摘要： A transflective-type and a reflection-type liquid crystal display device having a high reflection efficiency and a high image quality are provided. A liquid crystal display device of the present invention is a liquid crystal display device including a reflection region, wherein the reflection region includes an insulating layer, a semiconductor layer and a reflective layer formed on a metal layer having a plurality of recesses therein; a plurality of protrusions of the metal layer, each having a bottom surface, an upper surface and a slope, are formed between the plurality of recesses of the metal layer; and a width a of a bottom surface of at least one of the plurality of protrusions in the metal layer satisfies a≦2(x+y)/tan θ, where a denotes the width of the bottom surface of each of the plurality of protrusions, x a thickness between the bottom surface and the upper surface, θ a tilt angle of the slope with respect to the bottom surface, and y a total thickness of the insulating layer, the semiconductor layer and the reflective layer.

摘要翻译： 提供了具有高反射效率和高图像质量的透反射型和反射型液晶显示装置。 本发明的液晶显示装置是包括反射区域的液晶显示装置，其中反射区域包括绝缘层，半导体层和形成在其中具有多个凹部的金属层上的反射层; 在金属层的多个凹部之间形成金属层的多个突起，每个具有底面，上表面和斜面的突起; 并且所述金属层中的所述多个突起中的至少一个的底面的宽度a满足＆lt; nE; 2（x + y）/tanθ，其中，a表示所述多个 突起，底面和上表面之间的厚度xa; 斜面相对于底面的倾斜角，y是绝缘层，半导体层和反射层的总厚度。

公开(公告)号：US20100321618A1

公开(公告)日：2010-12-23

申请号：US12446099

申请日：2007-10-16

申请人： Mitsunori Imade ,  Hajime Imai ,  Hideki Kitagawa ,  Tetsuo Kikuchi ,  Yoshihito Hara ,  Junya Shimada

发明人： Mitsunori Imade ,  Hajime Imai ,  Hideki Kitagawa ,  Tetsuo Kikuchi ,  Yoshihito Hara ,  Junya Shimada

IPC分类号： G02F1/1335 ,  H01L33/46

CPC分类号： G02F1/133555 ,  G02F1/133553 ,  G02F1/136227 ,  G02F2201/34

摘要： A transflective-type and a reflection-type liquid crystal display device having a high reflection efficiency and a high image quality are provided. A liquid crystal display device of the present invention is a liquid crystal display device including a reflection region, wherein the reflection region includes an insulating layer, a semiconductor layer and a reflective layer formed on a metal layer having a plurality of recesses therein; a plurality of protrusions of the metal layer, each having a bottom surface, an upper surface and a slope, are formed between the plurality of recesses of the metal layer; and a width a of a bottom surface of at least one of the plurality of protrusions in the metal layer satisfies a≦2(x+y)/tan θ, where a denotes the width of the bottom surface of each of the plurality of protrusions, x a thickness between the bottom surface and the upper surface, θ a tilt angle of the slope with respect to the bottom surface, and y a total thickness of the insulating layer, the semiconductor layer and the reflective layer.

摘要翻译： 提供了具有高反射效率和高图像质量的透反射型和反射型液晶显示装置。 本发明的液晶显示装置是包括反射区域的液晶显示装置，其中反射区域包括绝缘层，半导体层和形成在其中具有多个凹部的金属层上的反射层; 在金属层的多个凹部之间形成金属层的多个突起，每个具有底面，上表面和斜面的突起; 并且所述金属层中的所述多个突起中的至少一个的底面的宽度a满足＆lt; nE; 2（x + y）/tanθ，其中，a表示所述多个 突起，底面和上表面之间的厚度xa; 斜面相对于底面的倾斜角，y是绝缘层，半导体层和反射层的总厚度。

公开(公告)号：US20090185119A1

公开(公告)日：2009-07-23

申请号：US12299154

申请日：2007-04-05

申请人： Tetsuo Kikuchi ,  Hajime Imai ,  Hideki Kitagawa ,  Mitsunori Imade ,  Yoshihito Hara ,  Junya Shimada ,  Takao Matsumoto

发明人： Tetsuo Kikuchi ,  Hajime Imai ,  Hideki Kitagawa ,  Mitsunori Imade ,  Yoshihito Hara ,  Junya Shimada ,  Takao Matsumoto

IPC分类号： G02F1/1335 ,  H01L21/77

CPC分类号： G02F1/133553 ,  G02F1/133555 ,  G02F1/1362

摘要： A liquid crystal display device includes a reflection region for reflecting incident light toward a display surface, wherein, the reflection region includes a metal layer formed on a substrate, a semiconductor layer formed above the metal layer, and a reflective layer formed above the semiconductor layer; and the reflection region includes a first recess formed on a surface of the reflective layer, a second recess formed on the surface of the reflective layer in the first recess, and a third recess formed on the surface of the reflective layer in the second recess. The liquid crystal display device provides a low-cost transflective-type or reflection-type liquid crystal display device having a high image quality.

摘要翻译： 液晶显示装置包括用于将入射光反射到显示面的反射区域，其中，反射区域包括形成在基板上的金属层，形成在金属层上方的半导体层，以及形成在半导体层上方的反射层 ; 并且反射区域包括形成在反射层的表面上的第一凹部，形成在第一凹部中的反射层的表面上的第二凹部，以及形成在第二凹部中的反射层的表面上的第三凹部。 液晶显示装置提供具有高图像质量的低成本半透反射型或反射型液晶显示装置。