摘要:
A color balancing circuit for a flat panel display such as an electroluminescent display generates a primary current that can be varied to adjust the overall brightness of the display. Three currents related to the primary current by selectable ratios are generated, by current mirror circuits, for example; the ratios can be individually varied to adjust the color balance. Driving currents are generated from the three adjusted currents, by mirroring the adjusted currents, for example, and are used to drive display elements that emit light in the three primary colors. Image brightness and color balance can accordingly be adjusted separately, even though both are adjusted by adjusting the driving current. Circuit size is reduced in that the same primary current is used for all three primary colors.
摘要:
A color balancing circuit for a flat panel display such as an electroluminescent display generates a primary current that can be varied to adjust the overall brightness of the display. Three currents related to the primary current by selectable ratios are generated, by current mirror circuits, for example; the ratios can be individually varied to adjust the color balance. Driving currents are generated from the three adjusted currents, by mirroring the adjusted currents, for example, and are used to drive display elements that emit light in the three primary colors. Image brightness and color balance can accordingly be adjusted separately, even though both are adjusted by adjusting the driving current. Circuit size is reduced in that the same primary current is used for all three primary colors.
摘要:
Disclosed is a drive circuit for a panel display device for driving light-emitting devices arranged at respective intersections between a plurality of data lines and a plurality of scan lines. This drive circuit includes a voltage control circuit for charging the light-emitting devices to a voltage necessary for light emission by connecting the data lines to a predetermined power supply potential in a rising period prior to a period for selectively causing the light-emitting devices to emit light; and a drive control circuit for selectively connecting the data lines to a constant current source after the rising period.
摘要:
Disclosed is a drive circuit for a panel display device for driving light-emitting devices arranged at respective intersections between a plurality of data lines and a plurality of scan lines. This drive circuit includes a voltage control circuit for charging the light-emitting devices to a voltage necessary for light emission by connecting the data lines to a predetermined power supply potential in a rising period prior to a period for selectively causing the light-emitting devices to emit light; and a drive control circuit for selectively connecting the data lines to a constant current source after the rising period.
摘要:
Provided is a recording material with a superior storage property for the background and image, particularly with a remarkable superiority in any of light resistance of the background, and light, moisture and heat resistance of the image. The recording material contains a phenolic compound represented by formula (I) [wherein R1-R3 each independently represent a hydrogen atom or C1-C4 alkyl group; R5 represents a hydrogen atom, C1-C4 alkyl group or C1-C4 alkoxy group, with the proviso that when R5 is a hydrogen atom, R4 is a C1-C4 alkyl group, when R5 is a C1-C4 alkyl group, R4 is a hydrogen atom, and when R5 is a C1-C4 alkoxy group, R4 is a C1-C4 alkoxy group].
摘要:
In the current drive section, a wiring for setting a substrate potential is separately provided from a wiring of a power potential VDD so that substrate potentials of P-channel MOS transistors within respective drive cells become the same regardless of the distance from the power pad (power potential VDD) to each drive cell.
摘要:
An information processing device connectable to another device via a transmission line includes an interface circuit connected to the transmission line, and a circuit which sends a signal to the transmission line and receive a signal from the transmission line. The interface circuit is supplied with electricity from the above another device. The above circuit is supplied with electricity from an external power source connected to the information processing device.
摘要:
A semiconductor memory device comprises a semiconductor substrate (10), a trench (12) formed on a main surface (11) of the semiconductor substrate, a gate region (15) formed on a main surface portion in the trench, a passive element region (16) formed on a bottom side portion of the trench and a source/drain region (20) formed on the main surface of the semiconductor substrate. The method for manufacturing the semiconductor memory device comprises the steps of forming a wide first trench (31) on a portion of the main surface of the semiconductor substrate, forming a narrow second trench (32) on the bottom portion of the first trench, forming a passive element region in the second trench, forming a gate region in the first trench, and forming a source/drain region on the main surface portion of the semiconductor substrate.
摘要:
Novel fluorinated carboxylic acid derivatives of the general formula: ##STR1## wherein R.sup.1 and R.sup.2 are independently selected from substituted or unsubstituted monovalent hydrocarbon groups, Rf is a divalent perfluoroalkyl or perfluoropolyether group, X is a hydrogen atom or triorganosilyl group, and a is equal to 2 or 3 are useful curing catalysts for RTV organopolysiloxane compositions. These fluorinated carboxylic acid derivatives are prepared by effecting hydrosilylation between alkenyl-containing fluorinated carboxylic acid derivatives and hydrosilanes in the presence of catalysts.
摘要:
A complementary semiconductor device having an improved capability of isolating devices comprises a P well 3 and an N well 2 both formed adjacent to each other on a main surface of a substrate 1, an N type impurity layer formed in the P well 8 on the main surface of the substrate, a P type impurity layer formed in the N well 9 on the main surface of the substrate, an N type region formed at the junction of the N well and the P well 71 on the main surface of the substrate, a first shield electrode 52 formed between the N type impurity layer 8 and the N type region 71 on the main surface of the substrate through an insulating film and a second shield electrode 51 formed between the N type region 71 and the P type impurity layer 9 on the main surface of the substrate through an insulating film. The first shield electrode 52 is connected to a potential V.sub.SS and the second shield electrode 51 and the N type region 71 are connected to a potential V.sub.CC, so that an N channel MOS transistor 101 comprising the first shield electrode 52 does not turn on and a device comprising the second shield electrode does not form a field effect transistor.