公开(公告)号：US20060082669A1

公开(公告)日：2006-04-20

申请号：US11251882

申请日：2005-10-18

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643

摘要： Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

摘要翻译： 设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱，形成在表面的第二p型阱 的光电转换区域，并且其中形成信号扫描电路部分的信号存储部分，以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分 杂质浓度高于光电转换区。 信号存储部分，其部分放置在信号读出门的下面，适于将信号电荷的分组从存储部分传送到信号扫描电路部分，并且其部分位于读出栅极下方的最深处。

公开(公告)号：US20050218436A1

公开(公告)日：2005-10-06

申请号：US11087602

申请日：2005-03-24

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L31/062 ,  H04N5/225 ,  H04N5/335 ,  H04N5/353 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374 ,  H04N5/376

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14643 ,  H01L31/035272

摘要： A solid-state image sensing device including an image sensing region in which a matrix of unit pixels, each including a photodiode in a surface portion of a semiconductor substrate, is provided; a read transistor connected between a respective photodiode and a detection node; an amplifying transistor connected to the detection node so as to amplify the signal charge output to the detection node and to output a pixel signal to a signal output line reading out the pixel signal output; a reset transistor connected to the detection node and to a discharge node; and an address transistor connected to a source of the amplifying transistor for selecting an address of the photodiode when an address signal is supplied to a gate.

摘要翻译： 一种固态图像感测装置，其包括图像感测区域，其中设置了在半导体衬底的表面部分中包括光电二极管的单位像素矩阵; 连接在相应光电二极管和检测节点之间的读取晶体管; 连接到检测节点的放大晶体管，以放大输出到检测节点的信号电荷，并将像素信号输出到读出像素信号输出的信号输出线; 连接到检测节点和放电节点的复位晶体管; 以及连接到放大晶体管的源极的地址晶体管，当地址信号被提供给栅极时，选择光电二极管的地址。

公开(公告)号：US07259412B2

公开(公告)日：2007-08-21

申请号：US11095592

申请日：2005-04-01

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Masayuki Ayabe ,  Hisanori Ihara

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Masayuki Ayabe ,  Hisanori Ihara

IPC分类号： H01L29/76

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14643

摘要： A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode. A third impurity area of a second conductivity type is formed in the surface of the substrate and spaced from the second impurity area at an opposite side to the first gate electrode. A fourth impurity area is formed under the second impurity area and connected to the third impurity area. A second gate electrode is provided above the substrate. A fifth impurity area of the second conductivity type is formed in the surface of the substrate. The third and fifth impurity areas sandwich a region under the second gate electrode.

摘要翻译： 固态成像装置包括第一导电类型的衬底。 在衬底的表面上设置包括第一栅极电极和第一和第二杂质区域的晶体管。 第一和第二杂质区域形成在衬底的表面中并夹着第一栅电极下的区域。 第二导电类型的第三杂质区域形成在衬底的表面中，并且与第一栅电极相对的一侧与第二杂质区隔开。 在第二杂质区下方形成第四杂质区，并与第三杂质区连接。 在基板上设置第二栅电极。 第二导电类型的第五杂质区域形成在衬底的表面中。 第三和第五杂质区夹在第二栅电极下方的区域。

公开(公告)号：US20070108487A1

公开(公告)日：2007-05-17

申请号：US11558200

申请日：2006-11-09

申请人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

发明人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

IPC分类号： H01L31/113

CPC分类号： H01L27/14634 ,  H01L27/14609 ,  H01L27/1463

摘要： A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.

摘要翻译： 固态摄像装置包括：半导体衬底，包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区，包括多个光电转换器，其中多个 光电转换器包括第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上，第一外围电路区域包括第一P型半导体 层，形成在第一N型半导体层上。 固体摄像装置还包括第二外围电路区域，其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

公开(公告)号：US07705380B2

公开(公告)日：2010-04-27

申请号：US11866682

申请日：2007-10-03

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/1463 ,  H01L27/14645

摘要： According to an aspect of the invention, there is provided an amplification-type solid-state image sensing device which uses a semiconductor substrate formed by epitaxially depositing an n-type semiconductor layer on a p-type semiconductor substrate and has a photoelectric conversion unit formed in the n-type semiconductor layer including a first p-type semiconductor layer which is formed under the photoelectric conversion unit of at least one of a G pixel portion and a B pixel portion a second p-type semiconductor layer which is formed to surround the photoelectric conversion unit together with the first p-type semiconductor layer and has a depth up to the first p-type semiconductor layer and a third p-type semiconductor layer which is formed to surround an R pixel portion and has a depth up to the p-type semiconductor substrate.

摘要翻译： 根据本发明的一个方面，提供了一种放大型固态摄像装置，其使用通过在p型半导体衬底上外延地形成n型半导体层而形成的半导体衬底，并且形成有光电转换单元 在包括形成在G像素部分和B像素部分中的至少一个的光电转换单元下面的第一p型半导体层的n型半导体层中，形成为包围所述第一p型半导体层的第二p型半导体层 光电转换单元与第一p型半导体层一起并且具有直到第一p型半导体层的深度和形成为包围R像素部分并具有直到p的深度的第三p型半导体层 型半导体衬底。

公开(公告)号：US07554141B2

公开(公告)日：2009-06-30

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L31/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

摘要翻译： 一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及 包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置 在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置 的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸 层到第一P型半导体层的表面部分。

公开(公告)号：US20080251822A1

公开(公告)日：2008-10-16

申请号：US11866682

申请日：2007-10-03

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H01L31/00

CPC分类号： H01L27/1463 ,  H01L27/14645

摘要： According to an aspect of the invention, there is provided an amplification-type solid-state image sensing device which uses a semiconductor substrate formed by epitaxially depositing an n-type semiconductor layer on a p-type semiconductor substrate and has a photoelectric conversion unit formed in the n-type semiconductor layer including a first p-type semiconductor layer which is formed under the photoelectric conversion unit of at least one of a G pixel portion and a B pixel portion a second p-type semiconductor layer which is formed to surround the photoelectric conversion unit together with the first p-type semiconductor layer and has a depth up to the first p-type semiconductor layer and a third p-type semiconductor layer which is formed to surround an R pixel portion and has a depth up to the p-type semiconductor substrate.

摘要翻译： 根据本发明的一个方面，提供了一种放大型固态摄像装置，其使用通过在p型半导体衬底上外延地形成n型半导体层而形成的半导体衬底，并且形成有光电转换单元 在包括形成在G像素部分和B像素部分中的至少一个的光电转换单元下面的第一p型半导体层的n型半导体层中，形成为包围所述第一p型半导体层的第二p型半导体层 光电转换单元与第一p型半导体层一起并且具有直到第一p型半导体层的深度和形成为包围R像素部分并具有直到p的深度的第三p型半导体层 型半导体衬底。

公开(公告)号：US07166828B2

公开(公告)日：2007-01-23

申请号：US11087602

申请日：2005-03-24

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14643 ,  H01L31/035272

摘要： A solid-state image sensing device including an image sensing region in which a matrix of unit pixels, each including a photodiode in a surface portion of a semiconductor substrate, is provided; a read transistor connected between a respective photodiode and a detection node; an amplifying transistor connected to the detection node so as to amplify the signal charge output to the detection node and to output a pixel signal to a signal output line reading out the pixel signal output; a reset transistor connected to the detection node and to a discharge node; and an address transistor connected to a source of the amplifying transistor for selecting an address of the photodiode when an address signal is supplied to a gate.

摘要翻译： 一种固态图像感测装置，其包括图像感测区域，其中设置了在半导体衬底的表面部分中包括光电二极管的单位像素矩阵; 连接在相应光电二极管和检测节点之间的读取晶体管; 连接到检测节点的放大晶体管，以放大输出到检测节点的信号电荷，并将像素信号输出到读出像素信号输出的信号输出线; 连接到检测节点和放电节点的复位晶体管; 以及连接到放大晶体管的源极的地址晶体管，当地址信号被提供给栅极时，选择光电二极管的地址。

公开(公告)号：US20060219867A1

公开(公告)日：2006-10-05

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

公开(公告)号：US20050242385A1

公开(公告)日：2005-11-03

申请号：US11095592

申请日：2005-04-01

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Masayuki Ayabe ,  Hisanori Ihara

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Masayuki Ayabe ,  Hisanori Ihara

IPC分类号： H01L27/108 ,  H01L27/146 ,  H01L31/10 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14643

摘要： A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode. A third impurity area of a second conductivity type is formed in the surface of the substrate and spaced from the second impurity area at an opposite side to the first gate electrode. A fourth impurity area is formed under the second impurity area and connected to the third impurity area. A second gate electrode is provided above the substrate. A fifth impurity area of the second conductivity type is formed in the surface of the substrate. The third and fifth impurity areas sandwich a region under the second gate electrode.

摘要翻译： 固态成像装置包括第一导电类型的衬底。 在衬底的表面上设置包括第一栅电极和第一和第二杂质区的晶体管。 第一和第二杂质区域形成在衬底的表面中并夹着第一栅电极下的区域。 第二导电类型的第三杂质区域形成在衬底的表面中并且与第一栅电极相对的一侧与第二杂质区隔开。 在第二杂质区下方形成第四杂质区，并与第三杂质区连接。 在基板上设置第二栅电极。 第二导电类型的第五杂质区域形成在衬底的表面中。 第三和第五杂质区夹在第二栅电极下方的区域。