公开(公告)号：US20240030218A1

公开(公告)日：2024-01-25

申请号：US18374200

申请日：2023-09-28

Applicant: Texas Instruments Incorporated

Inventor： Aravind Chennimalai Appaswamy

IPC: H01L27/082 ,  H01L29/08 ,  H01L21/8222

CPC classification number: H01L27/082 ,  H01L29/0821 ,  H01L29/0808 ,  H01L21/8222

Abstract: An SCR with a first semiconductor region and plural concentric semiconductor regions, each surrounding the first semiconductor region. The SCR also includes, surrounded by at least one concentric semiconductor region in the plurality of concentric semiconductor regions, an electrically non-contacted region of a semiconductor type and positioned to modulate a snapback voltage of the silicon controlled rectifier and an electrically-contacted region of the semiconductor type and positioned to provide a diodic response between the at least one concentric semiconductor region in the plurality of concentric semiconductor regions and the electrically-contacted region.

公开(公告)号：US20180152019A1

公开(公告)日：2018-05-31

申请号：US15361736

申请日：2016-11-28

Applicant: Texas Instruments Incorporated

Inventor： Krishna Praveen Mysore Rajagopal ,  Ann Margaret Concannon ,  Vishwanath Joshi ,  Aravind Chennimalai Appaswamy ,  Mariano Dissegna

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/046 ,  H01L27/0255

Abstract: Disclosed examples include an ESD protection circuit, including a transistor operative according to a control voltage signal at a control node to selectively conduct current from a protected node to a reference node during an ESD event, as well as a resistor connected between the control node and the reference node, a capacitor connected between the control node and an internal node, and a diode with an anode connected to the protected node and a cathode connected to the internal node to allow charging current to flow from the protected node to charge the capacitor and to provide a high impedance to the internal node to prevent or mitigate flow of leakage current from the internal node to the protected node to raise a trigger voltage of the protection circuit during normal operation.

公开(公告)号：US20240332284A1

公开(公告)日：2024-10-03

申请号：US18741857

申请日：2024-06-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： James Paul DiSarro ,  Aravind Chennimalai Appaswamy ,  Zaichen Chen

IPC: H01L27/02 ,  H01L29/739 ,  H02H9/04

CPC classification number: H01L27/0262 ,  H01L29/7393 ,  H02H9/046

Abstract: An electrostatic discharge protection system with a node adapted to receive a signal and threshold detecting circuitry coupled to the node. The system includes an IGBT having an IGBT gate coupled to an output of the threshold detecting circuitry, a resistor coupled between an IGBT emitter of the IGBT and a low reference potential node, and a BJT having a BJT base coupled to the IGBT emitter.

公开(公告)号：US11817455B2

公开(公告)日：2023-11-14

申请号：US17348525

申请日：2021-06-15

Applicant: Texas Instruments Incorporated

Inventor： Aravind Chennimalai Appaswamy

IPC: H01L29/08 ,  H01L27/082 ,  H01L21/8222

CPC classification number: H01L27/082 ,  H01L21/8222 ,  H01L29/0808 ,  H01L29/0821

Abstract: An SCR with a first semiconductor region and plural concentric semiconductor regions, each surrounding the first semiconductor region. The SCR also includes, surrounded by at least one concentric semiconductor region in the plurality of concentric semiconductor regions, an electrically non-contacted region of a semiconductor type and positioned to modulate a snapback voltage of the silicon controlled rectifier and an electrically-contacted region of the semiconductor type and positioned to provide a diodic response between the at least one concentric semiconductor region in the plurality of concentric semiconductor regions and the electrically-contacted region.

公开(公告)号：US20220223683A1

公开(公告)日：2022-07-14

申请号：US17536388

申请日：2021-11-29

Applicant: Texas Instruments Incorporated

Inventor： Aravind Chennimalai Appaswamy

IPC: H01L29/06 ,  H01L29/861 ,  H01L29/66 ,  H01L21/761

Abstract: A microelectronic device includes an integrated guard structure diode on the substrate. The integrated guard structure diode includes a first terminal of the diode, a second terminal of the diode, and a guard structure. The guard structure is between the first terminal of the diode and the second terminal of the diode. The first terminal of the diode and guard structure are electrically connected to each other. An optional switching element may provide selective electrical connection between the first terminal of the diode and the guard structure. Adding a guard structure electrically connected first terminal of the diode, with the guard structure between the first terminal of the diode and the second terminal of the diode provides higher break down voltage than a diode without a guard structure.

公开(公告)号：US10749336B2

公开(公告)日：2020-08-18

申请号：US15361736

申请日：2016-11-28

Applicant: Texas Instruments Incorporated

Inventor： Krishna Praveen Mysore Rajagopal ,  Ann Margaret Concannon ,  Vishwanath Joshi ,  Aravind Chennimalai Appaswamy ,  Mariano Dissegna

IPC: H02H9/00 ,  H02H9/04 ,  H01L27/02

Abstract: Disclosed examples include an ESD protection circuit, including a transistor operative according to a control voltage signal at a control node to selectively conduct current from a protected node to a reference node during an ESD event, as well as a resistor connected between the control node and the reference node, a capacitor connected between the control node and an internal node, and a diode with an anode connected to the protected node and a cathode connected to the internal node to allow charging current to flow from the protected node to charge the capacitor and to provide a high impedance to the internal node to prevent or mitigate flow of leakage current from the internal node to the protected node to raise a trigger voltage of the protection circuit during normal operation.

公开(公告)号：US10249610B1

公开(公告)日：2019-04-02

申请号：US15897020

申请日：2018-02-14

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Aravind Chennimalai Appaswamy ,  James P. Di Sarro ,  Krishna Praveen Mysore Rajagopal ,  Akram A. Salman ,  Muhammad Yusuf Ali

IPC: H01L27/00 ,  H01L29/00 ,  H04L21/00 ,  H01L27/02 ,  H01L29/10 ,  H01L29/08 ,  H01L29/739

Abstract: In some examples, an electrostatic discharge (ESD) device comprises an insulated-gate bipolar transistor (IGBT) comprising a source terminal, an anode terminal, a gate terminal, and a body terminal; and at least one reverse bias device comprising a first terminal and a second terminal, wherein the first terminal couples to the source terminal and the second terminal couples to the body terminal.

公开(公告)号：US12040322B2

公开(公告)日：2024-07-16

申请号：US17321466

申请日：2021-05-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： James Paul DiSarro ,  Aravind Chennimalai Appaswamy ,  Zaichen Chen

IPC: H01L27/02 ,  H01L29/739 ,  H02H9/04

CPC classification number: H01L27/0262 ,  H01L29/7393 ,  H02H9/046

Abstract: An electrostatic discharge protection system with a node adapted to receive a signal and threshold detecting circuitry coupled to the node. The system includes an IGBT having an IGBT gate coupled to an output of the threshold detecting circuitry, a resistor coupled between an IGBT emitter of the IGBT and a low reference potential node, and a BJT having a BJT base coupled to the IGBT emitter.

公开(公告)号：US20220223584A1

公开(公告)日：2022-07-14

申请号：US17348525

申请日：2021-06-15

Applicant: Texas Instruments Incorporated

Inventor： Aravind Chennimalai Appaswamy

IPC: H01L27/082 ,  H01L21/8222 ,  H01L29/08

Abstract: An SCR with a first semiconductor region and plural concentric semiconductor regions, each surrounding the first semiconductor region. The SCR also includes, surrounded by at least one concentric semiconductor region in the plurality of concentric semiconductor regions, an electrically non-contacted region of a semiconductor type and positioned to modulate a snapback voltage of the silicon controlled rectifier and an electrically-contacted region of the semiconductor type and positioned to provide a diodic response between the at least one concentric semiconductor region in the plurality of concentric semiconductor regions and the electrically-contacted region.

公开(公告)号：US20220223580A1

公开(公告)日：2022-07-14

申请号：US17321466

申请日：2021-05-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： James Paul DiSarro ,  Aravind Chennimalai Appaswamy ,  Zaichen Chen

IPC: H01L27/02 ,  H01L29/739 ,  H02H9/04

Abstract: An electrostatic discharge protection system with a node adapted to receive a signal and threshold detecting circuitry coupled to the node. The system includes an IGBT having an IGBT gate coupled to an output of the threshold detecting circuitry, a resistor coupled between an IGBT emitter of the IGBT and a low reference potential node, and a BJT having a BJT base coupled to the IGBT emitter.