-
1.发明授权Self-aligned semiconductor ridges in metallic slits as a platform for planar tunable nanoscale resonant photodetectors 有权金属狭缝中的自对准半导体脊作为平面可调谐纳米级谐振光电探测器的平台公开(公告)号：US08829633B2
公开(公告)日：2014-09-09
申请号：US13886998
申请日：2013-05-03
IPC分类号： H01L31/0232
CPC分类号： H01L31/0352 , H01L27/14 , H01L31/09
摘要： A photodetector having a ridge-in-slit geometry is provided, where a semiconductor ridge is laterally sandwiched in a metallic slit. This assembly is disposed on a layer of semiconducting material, which in turn is disposed on an insulating substrate. These structures can provide efficient resonant detectors having the wavelength of peak response set by the ridge width. Thus a lateral feature defines the wavelength of peak responsivity, as opposed to a vertical feature.
摘要翻译： 提供了具有棱缝形几何形状的光电检测器，其中半导体脊横向夹在金属狭缝中。 该组件设置在半导体材料层上，其又设置在绝缘基板上。 这些结构可以提供具有由脊宽度设定的峰值响应波长的有效的谐振检测器。 因此，与垂直特征相反，横向特征定义了峰值响应性的波长。
-
2.发明申请公开(公告)号：US20130200431A1
公开(公告)日：2013-08-08
申请号：US13762140
申请日：2013-02-07
CPC分类号： H01L29/12 , H01L21/02365 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L29/20
摘要： A robust fabrication process for selective area growth of semiconductors in growth windows is provided. Sidewall growth is eliminated by the presence of a spacer layer which covers the sidewalls. Undesirable exposure of the top corners of the growth windows is prevented by undercutting the growth window prior to deposition of the dielectric spacer layer. The effectiveness of this process has been demonstrated by selective-area growth of Ge and Ge/SiGe quantum wells on a silicon substrate. Integration of active optoelectronic devices with waveguide layers via end-coupling through the dielectric spacer layer can be reliably accomplished in this manner.
摘要翻译： 提供了一种用于增长窗口中半导体选择性面积增长的强大制造工艺。 通过存在覆盖侧壁的间隔层来消除侧壁生长。 通过在沉积介电隔离层之前削弱生长窗口来防止生长窗的顶角的不期望的暴露。 通过在硅衬底上的Ge和Ge / SiGe量子阱的选择性区域生长证明了该过程的有效性。 以这种方式可以可靠地实现通过端接耦合将有源光电子器件与波导层集成通过电介质间隔层。
-
3.发明授权Selective area growth of germanium and silicon-germanium in silicon waveguides for on-chip optical interconnect applications 有权用于芯片光互连应用的硅波导中的锗和硅锗的选择性区域增长公开(公告)号：US09368579B2
公开(公告)日：2016-06-14
申请号：US13762140
申请日：2013-02-07
CPC分类号： H01L29/12 , H01L21/02365 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L29/20
摘要： A robust fabrication process for selective area growth of semiconductors in growth windows is provided. Sidewall growth is eliminated by the presence of a spacer layer which covers the sidewalls. Undesirable exposure of the top corners of the growth windows is prevented by undercutting the growth window prior to deposition of the dielectric spacer layer. The effectiveness of this process has been demonstrated by selective-area growth of Ge and Ge/SiGe quantum wells on a silicon substrate. Integration of active optoelectronic devices with waveguide layers via end-coupling through the dielectric spacer layer can be reliably accomplished in this manner.
摘要翻译： 提供了一种用于增长窗口中半导体选择性面积增长的强大制造工艺。 通过存在覆盖侧壁的间隔层来消除侧壁生长。 通过在沉积介电隔离层之前削弱生长窗口来防止生长窗的顶角的不期望的暴露。 通过在硅衬底上的Ge和Ge / SiGe量子阱的选择性区域生长证明了该过程的有效性。 以这种方式可以可靠地实现通过端接耦合将有源光电子器件与波导层集成通过电介质间隔层。
-
4.发明申请Self-aligned Semiconductor Ridges in Metallic Slits as a Platform for Planar Tunable Nanoscale Resonant Photodetectors 有权金属狭缝中的自对准半导体脊梁作为平面可调谐纳米级谐振光电探测器的平台公开(公告)号：US20130292788A1
公开(公告)日：2013-11-07
申请号：US13886998
申请日：2013-05-03
IPC分类号： H01L31/0352 , H01L27/14
CPC分类号： H01L31/0352 , H01L27/14 , H01L31/09
摘要： A photodetector having a ridge-in-slit geometry is provided, where a semiconductor ridge is laterally sandwiched in a metallic slit. This assembly is disposed on a layer of semiconducting material, which in turn is disposed on an insulating substrate. These structures can provide efficient resonant detectors having the wavelength of peak response set by the ridge width. Thus a lateral feature defines the wavelength of peak responsivity, as opposed to a vertical feature.
摘要翻译： 提供了具有棱缝形几何形状的光电检测器，其中半导体脊横向夹在金属狭缝中。 该组件设置在半导体材料层上，其又设置在绝缘基板上。 这些结构可以提供具有由脊宽度设定的峰值响应波长的有效的谐振检测器。 因此，与垂直特征相反，横向特征定义了峰值响应性的波长。
-
-
-
搜索结果
4 条记录 (耗时 0.019 秒)
