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公开(公告)号:US20220205920A1
公开(公告)日:2022-06-30
申请号:US17394223
申请日:2021-08-04
Applicant: The Trustees of Princeton University
Inventor: Stephen Y. CHOU , Fei DING
Abstract: Some embodiments of the invention provide methods that can create large area complex patterns for nanoimprint molds without or with very litter of the use of the charged beam or photon beam direct-writing of nanostructures. Some embodiments of the invention use (i) Fourier nanoimprint patterning (FNP), (ii) edge-guided nanopatterning (EGN), and (iii) nanostructure self-perfection, and their combinations.
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公开(公告)号:US20240344993A1
公开(公告)日:2024-10-17
申请号:US18523814
申请日:2023-11-29
Applicant: The Trustees of Princeton University
Inventor: Stephen Y. CHOU , Fei DING
CPC classification number: G01N21/658 , B29C33/56 , B29C37/0003 , B29C59/02 , B29C59/026 , G01N21/648 , G01N21/6486 , G03F7/0002 , B29C33/424 , B29C2059/023 , B29K2995/0005
Abstract: Some embodiments of the invention provide methods that can create large area complex patterns for nanoimprint molds without or with very litter of the use of the charged beam or photon beam direct-writing of nanostructures. Some embodiments of the invention use (i) Fourier nanoimprint patterning (FNP), (ii) edge-guided nanopatterning (EGN), and (iii) nanostructure self-perfection, and their combinations.
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